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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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103 records · Page 6

Materials That Enhance Efficiency and Radiation Resistance of Solar Cells

A thin layer (approximately 10 microns) of a novel "transparent" fluorescent material is applied to existing solar cells or modules to effectively block and convert UV light, or other lower solar response waveband of solar radiation, to visible or IR light that can be more efficiently used by solar cells for additional photocurrent. Meanwhile, the layer of fluorescent coating material remains fully "transparent" to the visible and IR waveband of solar radiation, resulting in a net gain of solar cell efficiency. This innovation alters the effective solar spectral power distribution to which an existing cell gets exposed, and matches the maximum photovoltaic (PV) response of existing cells. By shifting a low PV response waveband (e.g., UV) of solar radiation to a high PV response waveband (e.g. Vis-Near IR) with novel fluorescent materials that are transparent to other solar-cell sensitive wavebands, electrical output from solar cells will be enhanced. This approach enhances the efficiency of solar cells by converting UV and high-energy particles in space that would otherwise be wasted to visible/IR light. This innovation is a generic technique that can be readily implemented to significantly increase efficiencies of both space and terrestrial solar cells, without incurring much cost, thus bringing a broad base of economical, social, and environmental benefits. The key to this approach is that the "fluorescent" material must be very efficient, and cannot block or attenuate the "desirable" and unconverted" waveband of solar radiation (e.g. Vis-NIR) from reaching the cells. Some nano-phosphors and novel organometallic complex materials have been identified that enhance the energy efficiency on some state-of-the-art commercial silicon and thin-film-based solar cells by over 6%.

Sun, Xiadong↗

Frequency-Modulated, Continuous-Wave Laser Ranging Using Photon-Counting Detectors

Optical ranging is a problem of estimating the round-trip flight time of a phase- or amplitude-modulated optical beam that reflects off of a target. Frequency- modulated, continuous-wave (FMCW) ranging systems obtain this estimate by performing an interferometric measurement between a local frequency- modulated laser beam and a delayed copy returning from the target. The range estimate is formed by mixing the target-return field with the local reference field on a beamsplitter and detecting the resultant beat modulation. In conventional FMCW ranging, the source modulation is linear in instantaneous frequency, the reference-arm field has many more photons than the target-return field, and the time-of-flight estimate is generated by balanced difference- detection of the beamsplitter output, followed by a frequency-domain peak search. This work focused on determining the maximum-likelihood (ML) estimation algorithm when continuous-time photoncounting detectors are used. It is founded on a rigorous statistical characterization of the (random) photoelectron emission times as a function of the incident optical field, including the deleterious effects caused by dark current and dead time. These statistics enable derivation of the Cramér-Rao lower bound (CRB) on the accuracy of FMCW ranging, and derivation of the ML estimator, whose performance approaches this bound at high photon flux. The estimation algorithm was developed, and its optimality properties were shown in simulation. Experimental data show that it performs better than the conventional estimation algorithms used. The demonstrated improvement is a factor of 1.414 over frequency-domainbased estimation. If the target interrogating photons and the local reference field photons are costed equally, the optimal allocation of photons between these two arms is to have them equally distributed. This is different than the state of the art, in which the local field is stronger than the target return. The optimal processing of the photocurrent processes at the outputs of the two detectors is to perform log-matched filtering followed by a summation and peak detection. This implies that neither difference detection, nor Fourier-domain peak detection, which are the staples of the state-of-the-art systems, is optimal when a weak local oscillator is employed.

Erkmen, Baris I.↗

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

Welser, Roger E.↗

Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

Singh, N. B.↗

Growth Mechanism of Nanowires: Ternary Chalcogenides

In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

Singh, N. B.↗

Surface Monitoring of CFRP Structures for Adhesive Bonding

Adhesive bonding of composite materials requires reliable monitoring and detection of surface contaminants to assure robust and durable bonded structures. Surface treatment and effective monitoring prior to bonding is essential in order to obtain a surface free from contaminants that may degrade structural performance. Two techniques which monitor the effectiveness of the laser surface treatment of carbon fiber reinforced polymer (CFRP) materials are being investigated: laser induced breakdown spectroscopy (LIBS) and optically stimulated electron emission (OSEE). The applicability of LIBS to detect silicone contaminants on CFRP composites is studied using ~35 ns Nd:YAG laser pulses at 355 nm with a pulse energy of 45 mJ. The LIBS regime in which pulse energies are < 100 mJ is referred to as mLIBS. CFRP surfaces were contaminated with polydimethylsiloxane (PDMS), a major component of silicone based mold release agents. The presence of PDMS is found by inspecting the Si I emission line at 288.2 nm. Untreated CFRP samples and CFRP contaminated with PDMS were tested. The PDMS areal density ranged from 0.36 Â+/- 0.04 to 0.51 Â+/- 0.16 mg/cm2. The results demonstrate the successful detection of PDMS on CFRP using mLIBS. In addition, OSEE was used to measure CFRP surface cleanliness pre- and post-treatment by laser ablation on specimens contaminated with PDMS coatings from 8 nm to 1311 nm in thickness. The results showed a significant increase in the OSEE photocurrent after laser surface treatment.

Ledesma, Rodolfo↗

Superlattice Infrared Photodetector Research at the Jet Propulsion Laboratory

III-V semiconductors offer a highly effective platform for the development of sophisticated heterostructure-based MWIR and LWIR detectors, as exemplified by the high-performance double heterostructure (DH) nBn, XBn, and type- II superlattice infrared detectors. A key enabling design element is the unipolar barrier, which is used to implement the complementary barrier infra-red detector (CBIRD) design for increasing the collection efficiency of photo-generated carriers, and reducing dark current generation without impeding photocurrent flow. Heterostructure superlattice detectors that make effective use of unipolar barriers have demonstrated strong reduction of generation-recombination (G-R) dark current due to Shockley-Read-Hall (SRH) processes. In the last several years we solely focused on the development of antimonide based IR detectors. Recently, we demonstrated RoA values over 14,000 Ohm sq cm for a 9.9 micron cutoff device by incorporating electron-blocking and hole-blocking unipolar barriers. This device has shown 300K BLIP operation with f/2 optics at 87 K with blackbody D* of 1.1x10(exp 11) cm Hz1/2/W.

focal planes↗

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

Welser, Roger E.↗

Development of High Performance Detector Technology for UV and Near IR Applications

Sensing and imaging for ultraviolet (UV) and nearinfrared (NIR) bands has many applications forNASA, defense, and commercial systems. Recentwork has involved developing UV avalanchephotodiode (UV-APD) arrays with high gain for highresolution imaging. Various GaN/AlGaN p-i-n (PIN)UV-APDs have been fabricated from epitaxialstructures grown by MOCVD on GaN substrates withavalanche gains higher than 5 x 10(exp 5), and significantlyhigher responsivities. Likewise, the SiGe materialsystem allows the demonstration of high-performancedetector array technology that covers the 0.5 to 1.7 mwavelength range for visible and NIR bands ofinterest. We have utilized SiGe fabrication technologyto develop Ge based PIN detector devices on 300 mmSi wafers. We will discuss the theoretical andexperimental results from electrical and opticalcharacterization of the detector devices with variousn+ region doping concentrations to demonstrate low dark currents below 1 uA at -1 V and high photocurrent. Recent results from these detectorarrays for UV and NIR detection will be presented.

IR↗

Light-concentrating microcone array for improving performance of infrared imaging devices

Light-harvesting low-index (n=1.6) microconical arrays are proposed for increasing the sensitivity and the signal-to-noise ratio (SNR) of mid-wave infrared (MWIR) focal plane arrays (FPAs) used in thermal cameras. Numerical modeling showed a 3-D Power enhancement factor ~ 50 in MWIR for 10° tapered microcones with Dt/Db = 60 μm/8μm and h=150μm, where Dt and Db are the top and bottom diameters of microcones, respectively. Such microconical arrays were fabricated in photoresist by using a nanoscribe tool directly on top of the front-illuminated Ni/Si Schottky-barrier, and three-fold enhancement in the photocurrent response was observed. The proposed approach permits increase of the SNR and the operation temperature of the MWIR imaging devices.

Astratov, Vasily N.↗

Improved Saturation Performance in High Speed Waveguide Photodetectors at 1.3 ??sing an Asymmetric InA1GaAs/InGaAsP Structure

Waveguide photodetector (WGPD) results have recently been presented demonstrating the very large bandwidth-efficiency product potential of these devices. Improved saturation and linearity characteristics are realized in waveguide p-i-n photodetectors at 1.3 ??y using an asymmetric cladding structure with InA1GaAs/InGaAsP in the anode and InGaAsP in the cathode.

multi-mode structures photocurrent saturation wave↗

On Using Intensity Interferometry for Feature Identification and Imaging of Remote Objects

We derive an approximation to the intensity covariance function of two scanning pinhole detectors, facing a distant source (e.g., a star) being occluded partially by an absorptive object (e.g., a planet). We focus on using this technique to identify or image an object that is in the line-of-sight between a well-characterized source and the detectors. We derive the observed perturbation to the intensity covariance map due to the object, showing that under some reasonable approximations it is proportional to the real part of the Fourier transform of the source's photon-flux density times the Fourier transform of the object's intensity absorption. We highlight the key parameters impacting its visibility and discuss the requirements for estimating object-related parameters, e.g., its size, velocity or shape. We consider an application of this result to determining the orbit inclination of an exoplanet orbiting a distant star. Finally, motivated by the intrinsically weak nature of the signature, we study its signal-to-noise ratio and determine the impact of system parameters.

quantum optics↗