Search NASA⌕ Search

SEARCH · Search NASA

Results for “Power Amplifier”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

High-power and high-spatial-coherence broad-area power amplifier

A broad-area AlGaAs amplifier operating CW has delivered 425 mW of total power with 342 mW in a single lobe diverging at 1.02 times the diffraction limit (FWHM 0.483 deg, 87.4-micron actual aperture) for a master oscillator input power of 70 mW. The spatial coherence of the amplifier output is 0.97, and the mutual spatial coherence between the oscillator and the amplifier is 0.96.

Andrews, John R.↗
NASA NTRS2000

Ka-band Solid State Power Amplifier (KAPA)

Communications subsystems for furture missions must be low-mass and enable equivalent if not great data return to the scientific community over the current X-band (8.4 GHz) links.

Ka-band Solid State Power Amplifier Deep Space One↗
NASA NTRS1993

Broadband linearisation of high-efficiency power amplifiers

A feedforward-based amplifier linearization technique is presented which is capable of yielding significant improvements in both linearity and power efficiency over conventional amplifier classes (e.g. class-A or class-AB). Theoretical and practical results are presented showing that class-C stages may be used for both the main and error amplifiers yielding practical efficiencies well in excess of 30 percent, with theoretical efficiencies of much greater than 40 percent being possible. The levels of linearity which may be achieved are required for most satellite systems, however if greater linearity is required, the technique may be used in addition to conventional pre-distortion techniques.

Kenington, Peter B.↗
NASA NTRS1985

Test results for 20-GHz GaAs FET spacecraft power amplifier

Test were conducted to measure the performance of the 20-GHz solid state, proof-of-concept amplifier. The amplifier operates over the 17.7 to 20.2-GHz frequency range and uses high power gallium arsenide field effect transistors. The amplifier design and test methods are briefly described. NASA and contractor performance data are compared.

Shalkhauser, K. A.↗
NASA NTRS2012

Design of an Ultra-Efficient GaN High Power Amplifier for Radar Front-Ends Using Active Harmonic Load-Pull

This work presents a new measurement technique, mixed-signal active harmonic load-pull (MSALP) developed by Anterverta-mw in partnership with Maury Microwave, that allows for wide-band ultra-high efficiency amplifiers to be designed using GaN technology. An overview of the theory behind active load-pull is presented and why load-pull is important for high-power device characterization. In addition, an example procedure is presented that outlines a methodology for amplifier design using this measurement system. Lastly, measured results of a 10W GaN amplifier are presented. This work aims to highlight the benefit of using this sophisticated measurement systems for to optimize amplifier design for real radar waveforms that in turn will simplify implementation of space-based radar systems

Active Load-pull↗
NASA NTRS1997

Ka-Band GaAs FET Monolithic Power Amplifier Development

Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

Saunier, Paul↗
NASA NTRS1971

Discrete-component S-band power amplifier

Amplifier uses low Q input and output circuitry incorporating four variable air dielectric capacitors. Performance over conventional designs includes - increased power output, decreased likelihood of parametric oscillation, and increased thermal stability.

Line, L. G.↗
NASA NTRS1991

The 60 GHz solid state power amplifier

A new amplifier architecture was developed during this contract that is superior to any other solid state approach. The amplifier produced 6 watts with 4 percent efficiency over a 2 GHz band at 61.5 GHz. The unit was 7 x 9 x 3 inches in size, 5.5 pounds in weight, and the conduction cooling through the baseplate is suitable for use in space. The amplifier used high efficiency GaAs IMPATT diodes which were mounted in 1-diode circuits, called modules. Eighteen modules were used in the design, and power combining was accomplished with a proprietary passive component called a combiner plate.

Mcclymonds, J.↗
DOE OSTI2023

A pulsed current-mode class-D low-voltage high-bandwidth power amplifier for portable NMR systems

Low-field NMR has seen growing interest in recent years, especially for portable applications. The lower homogeneity magnets used for portable applications require short RF pulses to ensure enough transmit bandwidth to excite the sample volume and also support short echo periods. Furthermore, the preferred use of a high-Q coil to improve signal-to-noise ratio (SNR) prolongs the pulse transients. Thus, at such low Larmor frequencies, the excitation pulse transients become comparable or longer than the pulse length, such that the transmit bandwidth begins to limit measurement SNR. This paper describes the design of a pulsed current-mode class-D power (PCMCD) transmitter that addresses this issue by generating high power in a tuned sample coil while maintaining short transients, thus resulting in high output bandwidth. The transmitter also uses a charge recycling mechanism to maximize power efficiency for RF train excitation, which also results in faster pulse repetition rate and reduces allowable echo time. In this work, experimental results from a small form-factor PCMCD transmitter are presented. This design generates a peak RF power of 240 W into a 9.16 µH coil at 4 MHz while operating off a single 12 V power supply. NMR measurement results using the transmitter are also described, showing minimum achievable echo time of 70 µs and 25 µs depending on the transmitter mode of operation.

47 OTHER INSTRUMENTATION↗
NASA NTRS1972

Development of a 20-W solid-state S-band power amplifier

As an alternative to the use of traveling wave tube amplifiers in spacecraft with long life mission requirements, a solid state S band amplifier was developed. A solid state amplifier with an output of 20 W at 2295 MHz, a dc/RF efficiency of 38%, and a gain of 27 dB was developed. The physical and electrical performance of the solid state amplifier are described.

Vandercapellen, A. G.↗