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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Self-aligned fabrication of vertical, fin-based structures

Modern power devices rely on complex, three-dimensional, vertical designs to increase their power density, ease their thermal management, and improve their reliability. However, fabrication techniques have historically relied on 2D processes for patterning lateral features. This work presents a new technology that uses multiple steps of angled depositions to fabricate self-aligned vertical, fin-based devices that avoid fundamental lithography resolution and alignment limitations. The fabrication flows of two devices, the self-aligned vertical finFET and the high-κ dielectric fin diode, are presented to demonstrate how angled depositions can readily achieve transistors with submicrometer, vertical gates in a source-first process and also create high-aspect ratio GaN fins with a record 70:1 aspect ratio.

Perozek, Joshua (ORCID:0000000251519131)↗
DOE OSTI2020

Influence of Time and Frequency Domain Wave Forcing on the Power Estimation of a Wave Energy Converter Array

Industry-specific tools for analyzing and optimizing the design of wave energy converters (WECs) and associated power systems are essential to advancing marine renewable energy. This study aims to quantify the influence of phase information on the device power output of a virtual WEC array. We run the phase-resolving wave model FUNWAVE-TVD (Total Variation Diminishing) to generate directional waves at the PacWave South site offshore from Newport, Oregon, where future WECs are expected to be installed for testing. The two broad cases presented correspond to mean wave climates during warm months (March–August) and cold months (September–February). FUNWAVE-TVD time series of sea-surface elevation are then used in WEC-Sim, a time domain numerical model, to simulate the hydrodynamic response of each device in the array and estimate their power output. For comparison, WEC-Sim is also run with wave energy spectra calculated from the FUNWAVE-TVD simulations, which do not retain phase information, and with wave spectra computed using the phase-averaged model Simulating WAves Nearshore (SWAN). The use of spectral data in WEC-Sim requires a conversion from frequency to time domain by means of random superposition of wave components, which are not necessarily consistent because of the linear assumption implicit in this method. Thus, power response is characterized by multiple realizations of the wave climates.

13 HYDRO ENERGY↗
DOE OSTI2024

A Comprehensive Strategy for Grid Forming Control in DC Coupled Photovoltaic and Battery Energy Storage Inverters

This paper presents an integrated DC-DC and DCAC grid-forming control strategy for DC-coupled photovoltaic (PV) plus battery energy storage systems, considering the effect of DC link voltage variations caused by direct PV connections. A power reference algorithm determines power distribution between the PV and battery to the grid while observing device power ratings to prevent the over-rating of components and keep the battery's state of charge within an acceptable range. The simulated utility-scale model in MATLAB/Simulink illustrates its ability against extreme phase angle variation contingencies in the grid while controlled through grid-forming control with a fast dynamic on DC link voltage. The simulation results confirm the effectiveness of the proposed control in integrating PV plus battery configurations with grid forming control and maintaining reliable grid operation under severe grid disturbances.

battery, boost, control, energy storage, grid form↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2023

Electrophoretic device and method to separate and detect analyte ions

This invention is directed to an inexpensive, miniaturized, portable, low-power device and method for electrophoretic separation and electrochemical detection of an analyte, including different isotopes of the same element. The invention replaces a conventional or microfabricated capillary electrophoresis tube with a microchip comprising an array of parallel electrophoretic separation nanotubes or aligned hollow channels fabricated in a porous substrate.

Klavetter, Kyle C.↗
DOE OSTI2020

Diagnosing Field Strengths and Plasma Conditions in Magnetically Insulated Transmission Lines Using Active Dopant Spectroscopy

Experimental validation data is needed to inform simulations of large pulsed power devices which are in development to understand and improve existing accelerators and inform future pulsed power capabilities. Using current spectroscopic techniques on the Z-machine, we have been unable to reliably diagnose plasma conditions and electric and magnetic fields within power flow regions. Laser ablation of a material produces a low density plasma, resulting in narrow spectroscopic line widths. By introducing a laser ablated plasma to the anode cathode gap of the Mykonos accelerator, we can monitor how the line shapes change due the current pulse by comparing these line shapes to spectral measurements taken without power flow. In this report we show several examples of measurements conducted on Mykonos on various dopant materials. We also show a negligible effect on power flow due to the presence of the ablation plasma for a range of parameters.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2022

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Traditional mesa terminations require precise angle design to reduce the electric field at the edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a premature breakdown. This work proposes the use of easy-to-implement hydrogen plasma treatment to solve the premature breakdown caused by mesa and demonstrates the avalanche capability in GaN-on-GaN p-i-n diodes. The breakdown electric field when the avalanche occurred was ∼2.3 MV/cm at room temperature for a GaN drift layer with a doping concentration of ∼7 × 1015 cm−3, which is consistent with the theoretical value. The temperature coefficient of the avalanche breakdown voltage of the devices was 4.64–4.85 × 10−4 K−1. This work shows a simple and effective approach to achieve avalanche capability in vertical GaN power devices, which can serve as an important reference for the future development of efficient and robust GaN power electronics.

Fu, Kai (ORCID:0000000294057512)↗
DOE OSTI2020

The global energy footprint of information and communication technology electronics in connected Internet-of-Things devices

Information and communication technology (ICT) has been critical to the emergence of a new Internet-of-Things (IoT) era, as a rapidly increasing number and variety of IoT electronic devices in a wide range of end-use sectors require massive data communication in terms of volume, velocity/speed, and variety. Additionally, semiconductor technology advancements have played a key role in ICT and unlike the past ICT energy footprint analysis, which focused on the final electronic product, an attempt has been made to examine the global energy impacts for the period 2016–2025 based on the market forecasts of three major IoT IC types, i.e., sensors and actuators, connectivity, and processor ICs distributed among four major IoT device components.Total global IoT semiconductor primary energy demand is projected to increase from 2 EJ in 2016 to 35 EJ by 2025, resulting mainly from a substantial projected increase energy needed in the manufacturing of ICs, with growth in the use of sensors and energy-intensive next fab generation manufacturing. Unlike the trend in manufacturing energy, total global operational energy use is projected to decrease significantly with the development of smaller transistor size, low-power devices, and faster wireless data communication technology. Total operational energy is projected to significantly decrease from 118 TWh/year (1,2 EJ/year) to less than 1 TWh/year (0.003 EJ/year) in spite of a significantly higher anticipated growth in its market size during the 2016–2025 forecast period. Its annual share of total primary energy use is projected to reach an insignificant level of 0.01% by the end of 2025, consistent with the past limited electronic product life cycle analyses besides the analysis focus here limited to ICs in IoT devices.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

2021 Annual Progress Report: Vertical GaN Device Development

This project is part of a multi-lab consortium that leverages U.S. research expertise and facilities at national labs and universities to significantly advance electric drive power density and reliability, while simultaneously reducing cost. The final objective of the consortium is to develop a 100 kW traction drive system that achieves 33 kW/L, has an operational life of 300,000 miles, and a cost of less than 6 dollars/kW. One element of the system is a 100 kW inverter with a power density of 100 kW/L and a cost of 2.7 dollars/kW. New materials such as wide-bandgap semiconductors, soft magnetic materials, and ceramic dielectrics, integrated using multi-objective co-optimization design techniques, will be utilized to achieve these program goals. This project focuses on a subset of the power electronics work within the consortium, specifically the design, fabrication, and evaluation of vertical GaN power devices suitable for automotive applications.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

VTO 2022 Annual Progress Report: Vertical GaN Device Development

This project is part of a multi-lab consortium that leverages U.S. research expertise and facilities at national labs and universities to significantly advance electric drive power density and reliability, while simultaneously reducing cost. The final objective of the consortium is to develop a 100 kW traction drive system that achieves 33 kW/L, has an operational life of 300,000 miles, and a cost of less than $\$$6/kW. One element of the system is a 100 kW inverter with a power density of 100 kW/L and a cost of $\$$2.7/kW. New materials such as wide bandgap semiconductors, soft magnetic materials, and ceramic dielectrics, integrated using multi-objective co optimization design techniques, will be utilized to achieve these program goals. This project focuses on a subset of the power electronics work within the consortium, specifically the design, fabrication, and evaluation of vertical GaN power devices suitable for automotive applications.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗
DOE OSTI2024

Power Generation Enhancement through Latching Control for a Sliding Magnet-Based Wave Energy Converter

A Surface-Riding Wave Energy Converter (SR-WEC) featuring a sliding magnet inside a pitching cylindrical hull is investigated as an easily deployable small power device to support small-scale marine operations. This study extends the earlier development of the system by authors to enhance power performance through the application of end spring and latching control. The inclusion of springs at the tube’s end enhances the magnet release and travel speeds as well as the average power output compared to systems without them. Further improvement of power output can also be achieved by employing optimal latching control. We introduced constant-angle and variable-angle unlatching strategies to determine optimal parameters in combination with passive and reactive power take-off (PTO) controls to assess their effectiveness. The optimized latching control and end spring can increase 60–80% more power output compared with the case without them under certain PTO damping. Additionally, we discussed the effects of limiting peak powers and associated energy leaks with latching.

Lee, Yongseok↗
DOE OSTI2021

Hybrid prioritized resource allocation in thermally-or power-constrained computing devices

Various embodiments comprise prioritizing frequency allocations in thermally- or power-constrained computing devices. Computer elements may be assigned ‘weights’ based on their priorities. The computer elements with higher weights may receive higher frequency allocations to assure they receive priority in processing more quickly. The computer elements with lower weights may receive lower frequency allocations and suffer a slowdown in their processing. Elements with the same weight may be grouped together for the purpose of frequency allocation.

Al-Rawi, Asma↗
DOE OSTI2025

Thermomagnetic generators for ultra-low-grade marine thermal energy harvesting

Low-grade thermal gradients in marine environments represent an underexploited energy source for autonomous sensing and monitoring. Converting such small temperature differences into usable electrical power remains a key challenge for ocean-deployed systems. We present a deployable thermomagnetic generator thoroughly characterized for marine-relevant energy harvesting. The device powers an internet-connected sensor and harvests ultra-low temperature differences akin to those at the ocean surface. It draws heat from water and rejects it to ambient air, operating optimally at a temperature difference (ΔT) of ~7.5 °C. Laboratory prototypes generated up to 6.7 mW at ΔT ~ 10 °C with gentle airflow (~1 m s -1 ). A separate controlled wave-tank demonstration validated stable operation and sensor powering under marine-like boundary conditions. Given its voltage and power margins, the generator could sustain multiple sensor nodes. Scalability and material assessments identify modular deployment and non-rare-earth alternatives as pathways toward practical marine energy harvesting and low-grade waste-heat recovery.

16 TIDAL AND WAVE POWER↗
DOE OSTI2025

Enabling The Next Generation of Smart Sensors in Coal Fired Power Plants using Cellular 5G Technology

Ohio University (OHIO), West Virginia University (WVU), and American Electric Power (AEP) proposed to study and report on the benefits of 5G wireless cellular technologies for coal-fired power plants. The significant advantages, cost savings, and potential of 5G wireless data communications based sensors promised to usher in a new era of reliable, inexpensive, and powerful embedded systems that had not previously been available for coal-fired power plants. The team built upon existing experience with cellular-based systems, power plant water quality sensing, and high temperature sensors developed during past projects. Principal Investigator Wilhelm had been developing cellular-based sensor data systems with a commercial partner for 10 years, pioneering innovative solar-powered devices that began with 2G technology. The lessons and knowledge gained served as a foundation to demonstrate innovations and potential impacts specific to coal fired power plants enabled by 5G technology, along with integration with existing sensors and systems.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2022

Thermodynamics of quantum measurement and Maxwell's demon's arrow of time

Here, we discuss the thermodynamic aspects of a single qubit based device, powered by weak quantum measurements, and feedback controlled by a quantum Maxwell's demon. We discuss both discrete and time-continuous operation of the measurement based device at finite temperature of the reservoir. In the discrete example where a demon acquires information via discrete weak measurements, we find that the thermodynamic variables including the heat exchanged, extractable work, and the entropy produced are completely determined by an information theoretic measure of the demon's perceived arrow of time. We also discuss a realistic time-continuous operation of the device where the feedback is applied after a sequence of weak measurements. In the time-continuous limit, we derive the exact finite-time statistics of work, heat and entropy changes along individual quantum trajectories of the quantum measurement process, and relate them to the demon's arrow of time.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

3-D Prismatic Packaging Methodologies for Wide Band Gap Power Electronics Modules

In a power module the parasitic inductance limits the dynamic high-frequency performance, and the area of the cooling surfaces limits the power capability. This paper presents a new 3D power electronic design methodology based on the concept of mutual inductance cancellation and multi-sided heat transfer. New 3D prismatic packaging concepts are proposed for Wide Band Gap (WBG) power devices, where the devices can be mounted at acute angles to adjacent interconnects or other devices. Discussion is given on electrical and thermal path optimization in a 3D space. To validate the 3D prismatic packaging methodology, a 1200V/50A SiC half-bridge power module is fabricated and tested for electrical and thermal performance and results are compared with simulations. The power density calculated for the module is 12 kW/in3 (including heatsink) and shows a 31.3% inductance reduction compared to a 2D planar module. Finally, design guidance suggested for utilizing prismatic structures is provided, together with suggested future work in the area. This paper presents the first reported true 3D power module.

24 POWER TRANSMISSION AND DISTRIBUTION↗