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At least 109 records · Page 6

Nontrivial fusion of Majorana zero modes in interacting quantum-dot arrays

Motivated by recent experimental reports of Majorana zero modes (MZMs) in quantum-dot systems at the “sweet spot,” where the electronic hopping t ℎ is equal to the superconducting coupling Δ, we study the time-dependent spectroscopy corresponding to the nontrivial fusion of MZMs. The term “nontrivial” refers to the fusion of Majoranas from different original pairs of MZMs, each with well-defined parities. We employ an experimentally accessible time-dependent real-space local density-of-states (LDOS) method to investigate the nontrivial MZM fusion outcomes in canonical chains and in a Y-shaped array of interacting electrons. In the case of quantum-dot chains where two pairs of MZMs are initially disconnected, after fusion we find equal-height peaks in the electron and hole components of the LDOS, signaling nontrivial fusion into both the vacuum I and fermion Ψ channels with equal weight. For π-junction quantum-dot chains, where the superconducting phase has opposite signs on the left and right portions of the chain, after the nontrivial fusion we observed the formation of an exotic two-site MZM near the center of the chain, coexisting with another single-site MZM. Furthermore, we also studied the fusion of three MZMs in the Y-shaped geometry. In this case, after the fusion we observed the novel formation of another exotic multisite MZM, with properties depending on the connection and geometry of the central region of the Y-shaped quantum-dot array.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nanostructured Quantum Dots or Dashes in Photovoltaic Devices and Methods Thereof

A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.

Raffaele, Ryne P.↗

Laterally Coupled Quantum-Dot Distributed-Feedback Lasers

InAs quantum-dot lasers that feature distributed feedback and lateral evanescent- wave coupling have been demonstrated in operation at a wavelength of 1.3 m. These lasers are prototypes of optical-communication oscillators that are required to be capable of stable single-frequency, single-spatial-mode operation. A laser of this type (see figure) includes an active layer that comprises multiple stacks of InAs quantum dots embedded within InGaAs quantum wells. Distributed feedback is provided by gratings formed on both sides of a ridge by electron lithography and reactive-ion etching on the surfaces of an AlGaAs/GaAs waveguide. The lateral evanescent-wave coupling between the gratings and the wave propagating in the waveguide is strong enough to ensure operation at a single frequency, and the waveguide is thick enough to sustain a stable single spatial mode. In tests, the lasers were found to emit continuous-wave radiation at temperatures up to about 90 C. Side modes were found to be suppressed by more than 30 dB.

Qui, Yueming↗

Ultrafast nonlinear absorption of TMDC quantum dots

Here, we study theoretically absorption properties of MoS 2 quantum dots placed in an ultrashort and strong optical pulse with the duration of a few femtoseconds and the amplitude up to 1.5 V/Å. While the monolayer of MoS 2 has a bandgap of ≈ 1.8 eV, the quantum dots of MoS 2 have in-gap edge states, which open additional absorption channels. The absorbance of the system strongly depends on the amplitude of the pulse. At small amplitude, less than 0.5 V/Å, the absorbance varies by more than 20% with the frequency of the pulse. The system shows saturable absorption if the frequency of the pulse is larger than the bulk bandgap and reverse saturable absorption if the frequency of the pulse is in the bandgap. At large amplitudes, > 0.5 V/Å, of the pulse, the ultrafast absorbance of a quantum dot has a weak dependence on the pulse frequency. If the frequency of the pulse is less than the corresponding bulk bandgap, the absorbance has a nonmonotonic dependence on the pulse amplitude with the maximum at ≈ 0.5 V/Å. We also present the results for QDs of different TMDC materials, which show that at large field amplitude, > 0.5 V/Å, the absorbance is universal and has weak dependence on the type of TMDC.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Cross-correlation spectra in interacting quantum dot systems

Two-color spin-noise spectroscopy of interacting electron spins in singly charged semiconductor quantum dots provides information on the interquantum dot interactions. We investigate the spin cross-correlation function in a quantum dot ensemble employing a modified semiclassical approach. Spin-correlation functions are calculated using a Hamilton quaternion approach that maintains local quantum mechanical properties of the spins. This method takes into account the effects of the nuclear-electric quadrupolar interactions, the randomness of the coupling constants, and the variation of the electron g factor on the spin-noise power spectra. We demonstrate that the quantum dot ensemble can be mapped on an effective two-quantum dot problem and discuss how the characteristic length scale of the interdot interaction modifies the low-frequency cross-correlation spectrum. Here, we argue that details on the interaction strength distribution can be extracted from the cross-correlation spectrum when applying a longitudinal or a transversal external magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Lattice distortion inducing exciton splitting and coherent quantum beating in CsPbI 3 perovskite quantum dots

It is well known that shape or crystal anisotropy in nanocrystal quantum dots, which are tiny semiconductor nanoparticles, results in energy splitting of their optically bright excitons (bound electron-hole pairs), which is known as fine structure splitting (FSS). Studying FSS usually requires single or just a few quantum dots because of its sensitivity to nanocrystal size and shape. In this work, by using ensemble-level femtosecond polarized transient absorption, the authors observed clear bright-exciton FSS in solution-processed CsPbI 3 perovskite QDs, which is manifested as exciton quantum beats (periodic oscillations of kinetic traces). Remarkably, the beat frequency of a given sample, as determined by the FSS energy, can be continuously controlled by changing the temperature. The FSS is linked experimentally for the first time to temperature dependent lattice distortion in the orthorhombic crystal structure. Because these orthorhombic-phase nanocrystal quantum dots are bounded by the pseudocubic family of crystal planes, the lattice distortion results in a misalignment between the lattice vectors and the nanocrystal edge directions which breaks the symmetry, leading to previously unrecognized avoided crossing “fine-structure gap” between bright exciton. Furthermore, this fine structure gap is responsible for the ability to observe quantum beats despite the shape inhomogeneity within the measured ensemble. Lattice-distortion dependent FSS in CsPbI 3 QDs has important consequences for their application as a platform for coherence and entanglement control in quantum information science.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fano Resonance in CO 2 Reduction Catalyst Functionalized Quantum Dots

Molecular catalyst functionalized semiconductor quantum dots (QDs) are a promising modular platform for developing novel hybrid photocatalysts. The interaction between adsorbed catalyst vibrations and the QD electron intraband absorption can influence the photophysical properties of both the QD and the catalysts and potentially their photocatalysis. In CdSe QDs functionalized by the CO 2 reduction catalyst, Re(CO) 3 (4,4’-bipyridine-COOH)Cl, we observe that the transient Fano resonance signal resulting from coupling of the catalyst CO stretching mode and the QD conduction band electron mid-IR intraband absorption appears on an ultrafast time scale and decays with the electron population, irrespective of the occurrence of photoreduced catalysts. The Fano asymmetry factor increases with an increase in the adsorbed catalyst number and a decrease in QD sizes. The latter can be attributed to an enhanced charge transfer interaction between the more strongly quantum-confined QD conduction band and catalyst LUMO levels. These results provide a more in-depth understanding of interactions in excited QD-catalyst hybrid photocatalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Hybridization and deconfinement in colloidal quantum dot molecules

The structural, electronic, and optical properties of CdSe/CdS core–shell colloidal quantum dot molecules, a new class of coupled quantum dot dimers, are explored using atomistic approaches. Unlike the case of dimers grown by molecular beam epitaxy, simulated strain profile maps of free-standing colloidal dimers show negligible additional strain resulting from the attachment. Further, the electronic properties of the relaxed dimers are described within a semiempirical pseudopotential model combined with the Bethe–Salpeter equation within the static screening approximation to account for electron–hole correlations. The interplay of strain, hybridization (tunneling splitting), quantum confinement, and electron–hole binding energies on the optical properties is analyzed and discussed. The effects of the dimensions of the neck connecting the two quantum dot building blocks, as well as the shell thickness, are studied.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Guanidinium-Assisted Surface Matrix Engineering for Highly Efficient Perovskite Quantum Dot Photovoltaics

Metal halide perovskite quantum dots (Pe-QDs) are of great interest in new-generation photovoltaics (PVs). However, it remains challenging in the construction of conductive and intact Pe-QD films to maximize their functionality. Herein, a ligand-assisted surface matrix strategy to engineer the surface and packing states of Pe-QD solids is demonstrated by a mild thermal annealing treatment after ligand exchange processing (referred to as “LE-TA”) triggered by guanidinium thiocyanate. The “LE-TA” method induces the formation of surface matrix on CsPbI 3 QDs, which is dominated by the cationic guanidinium (GA+) rather than the SCN-, maintaining the intact cubic structure and facilitating interparticle electrical interaction of QD solids. Consequently, the GA-matrix-confined CsPbI 3 QDs exhibit remarkably enhanced charge mobility and carrier diffusion length compared to control ones, leading to a champion power conversion efficiency of 15.21% when assembled in PVs, which is one of the highest among all Pe-QD solar cells. Additionally, the “LE-TA” method shows similar effects when applied to other Pe-QD PV systems like CsPbBr 3 and FAPbI 3 (FA = formamidinium), indicating its versatility in regulating the surfaces of various Pe-QDs. This work may afford new guidelines to construct electrically conductive and structurally intact Pe-QD solids for efficient optoelectronic devices.

36 MATERIALS SCIENCE↗

Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron

The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.

Qiu, Yueming↗

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the “Wiggle Well”, whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 μ eV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Design of Zn Chalcogenide Shells for Emissive Ga-Rich In 1– X Ga X As Quantum Dots Synthesized in Molten Salts

Colloidal quantum dots (QDs) have seen expanded applications in optoelectronics from visible to near-infrared (NIR) wavelengths. However, the options for QDs with bright and size-tunable emission in the NIR region are mostly limited to heavy-metal-based (Pb, Cd, Hg) semiconductors. Here, Ga-rich In 1–X Ga X As QDs with zinc chalcogenide shells are demonstrated as candidates for NIR emitters. Based on new developments in inorganic molten salt chemistry, we synthesized colloidal In 1–X Ga X As QDs containing up to 85% gallium with high crystallinity based on Raman and XRD analyses. Zinc selenide and sulfide shells with different morphologies were grown on In 1–X Ga X As QDs by controlling the Zn precursor chemistry. Despite the nominally reduced lattice mismatch in the In 1–X Ga X As/ZnSe heterostructure, a ZnS shell was found to be a much more effective passivation material: In 1–X Ga X As/ZnS core–shell QDs show a photoluminescence quantum yield (PL QY) of about 30% versus 11% for ZnSe shells. In conclusion, based on the analysis of PL decay and transient absorption (TA) dynamics, we surmise that electron trapping is the major reason for efficiency loss, providing a clear heterostructure design principle for realizing efficient NIR-emitting In 1–X Ga X As QDs.

Electron trapping↗

High harmonic generation in Haldane model quantum dots

We study theoretically the nonlinear electron dynamics of Haldane model quantum dots placed in the field of an ultrashort optical pulse. One of the tuning parameters of the Haldane model is the phase accumulated by an electron during its transfer between the next nearest neighbor sites. We study how this parameter affect the nonlinear electron dynamics and the generation of high optical harmonics. With increasing the phase from its zero value to 90°, the low-energy electron states in the conduction and valence bands become more localized near the edges of the quantum dot resulting in suppression of the band gap, enhancement of the dipole inter-band coupling, and strong suppression of the average low-energy electron density of the states. As a result, the nonlinear response of the electron system of a Haldane model quantum dot is the strongest at intermediate values of the phase, ≈ 30− 40°. At these values of the phase, the electron dynamics is irreversible and a few first high-order harmonics have the largest intensities. Here, when the phase approaches 90° value the generation of high harmonics is strongly suppressed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

3D Volumetric Structural Hierarchy Induced by Colloidal Polymerization of a Quantum-Dot Ionic Liquid Monomer Conjugate

Hierarchically structured emissive quantum dot (CdS/CdSe) poly(ionic liquid) composites are synthesized through colloidal polymerization within a lyotropic liquid crystal, yielding a solvent-responsive nanoparticle (NP) composite possessing four ordered structural motifs. The composite is prepared by coassembling an amphiphilic ionic liquid (IL) monomer, 3-decyl-1-vinylimidazolium chloride, [C 10 VIm + ][Cl - ], and IL monomer, 3-(10-mercaptodecyl)-1-vinylimidazolium bromide surface-functionalized quantum dots, QD-[SC 10 VIm + ][Br - ], in 30 wt % water. Photo (UV)-initiated free radical polymerization serves to form a colloidal copolymer that collimates pairs of QDs within the core of large cylinders (average diameter = 21 nm and length = 422 nm), as evidenced by ultrasmall-angle X-ray scattering (USAXS). As revealed by continuous wave terahertz multispectral reconstructive 3-D imaging, the subsurface structure along the cylinder axis undergoes dynamic rearrangement between 2D hexagonal and cubic packing. The polymerized ionic liquid sheath surrounding the QDs is composed of concentric hexagonally perforated lamellae (HPL) with an interlamellar repeat distance of 3 nm, as determined by small-angle X-ray scattering (SAXS). The encapsulated QDs retain crystallinity (TEM and WAXS) and emission characteristics (photoluminescence spectroscopy, lambda(EM) = 638 nm). Phenomenological time-dependent Ginzburg-Landau calculations verify the mesoscale cylinders arise from the topological constraints imposed by the in-plane perforations of the polymerized ionic liquid as it wraps around the hard (unmalleable) spherical QDs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Environmentally Robust Quantum Dot Down Converters for Highly Efficient Solid State Lighting

This project contributes fundamental understanding of the chemical synthesis of cadmium free quantum dots (QDs) designed for solid state lighting (SSL). Methods to incorporate gallium into quantum dot architectures were explored, which led to more stable and brighter solid state lighting devices. These findings will help advance the incorporation of quantum dots in highly energy efficient lighting devices with a warm color spectrum. Such Cd-free lighting devices can greatly accelerate the adoption of high efficiency, warm spectrum lighting in buildings. The project targeted InP/GaP/ZnS colloidal quantum dots that more effectively absorb the blue light produced by light emitting diode packages and emit monochromatic red light with near perfect efficiency. While significant improvements in the QD absorptivity were demonstrated, the absorbance increase achieved was 3x rather than the targeted 10x increase. Similarly, the luminescence from these QDs achieved about half of the target photoluminescence quantum yield (PLQY) and twice the desired spectral width, a measure of the color purity of their luminescence. While the target characteristics and some of the year 2/2 milestones were not met, the new QD architectures did lead to greater stability on SSL packages, a sign of the long term promise of the technology.

36 MATERIALS SCIENCE↗

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high-fidelity quantum computing. Here we present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Analog Quantum Simulation of the Dynamics of Open Quantum Systems with Quantum Dots and Microelectronic Circuits

We introduce a general setup for the analog quantum simulation of the dynamics of open quantum systems based on semiconductor quantum dots electrically connected to a chain of quantum RLC electronic circuits. The dots are chosen to be in the regime of spin-charge hybridization to enhance their sensitivity to the RLC circuits while mitigating the detrimental effects of unwanted noise. In this context, we establish an experimentally realizable map between the hybrid system and a qubit coupled to thermal harmonic environments of arbitrary complexity that enables the analog quantum simulation of open quantum systems. We assess the utility of the simulator by numerically exact emulations that indicate that the experimental setup can faithfully mimic the intended target even in the presence of its natural inherent noise. We further provide a detailed analysis of the physical requirements on the quantum dots and the RLC circuits needed to experimentally realize this proposal that indicates that the simulator can be created with existing technology. The approach can exactly capture the effects of highly structured non-Markovian quantum environments typical of photosynthesis and chemical dynamics, and offer clear potential advantages over conventional and even quantum computation. The proposal opens a general path for effective quantum dynamics simulations based on semiconductor quantum dots.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗