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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6

Lightweight Damage Tolerant Radiators for In-Space Nuclear Electric Power and Propulsion

Nuclear electric propulsion (NEP) is a promising option for high-speed in-space travel due to the high energy density of nuclear power sources and efficient electric thrusters. Advanced power conversion technologies for converting thermal energy from the reactor to electrical energy at high operating temperatures would benefit from lightweight, high temperature radiator materials. Radiator performance dictates power output for nuclear electric propulsion systems. Pitch-based carbon fiber materials have the potential to offer significant improvements in operating temperature and mass. An effort at the NASA Marshall Space Flight Center to show that woven high thermal conductivity carbon fiber mats can be used to replace standard metal and composite radiator fins to dissipate waste heat from NEP systems is ongoing. The goals of this effort are to demonstrate a proof of concept, to show that a significant improvement of specific power (power/mass) can be achieved, and to develop a thermal model with predictive capabilities. A description of this effort is presented.

Craven, Paul↗

Radiation Tolerance Studies of Long Wavelength Infrared InAs/GaSb Detectors

In this work we investigated the effect of proton irradiation on the performance of long wavelength infrared (LWIR) InAs/GaSb photodiodes (λ(sub c) = 10.2µm) based on the complementary barrier infrared detector (CBIRD) design. We found that irradiation with 68MeV protons up to the total ionizing dose TID = 200 kRad results in only small (about 15%) decrease of the Quantum Efficiency and does not increase the operational bias of the photodiodes. However, the irradiation causes a significant increase of the dark current from j(sub d) = 5x10(exp -5) A/sq cm at V(sub b) = 0.1V and T = 80K to j(sub d) = 6x10(exp -3) A/sq cm at TID = 200 kRad. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by the trap assisted tunneling processes in the proton displacement damage areas near the device sidewalls.

InAs/GaSb photodiodes↗

A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots.

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in Si02 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled.

Green, M. L.↗

Cassini Solid State Recorder: A High Capacity, Radiation Tolerant High-Performance Unit

Onboard the Cassini spacecraft, and the subject of this paper, are two Solid State Recorders designed and built by TRW, Inc., of Redondo Beach, California, for NASA's Jet Propulsion Laboratory. These recorders, which were the first ones designed and selected by NASA for a space program, represent the new frontier and a new beginning for spaceborne data storage.

Cassini↗

Radiation tolerant microstructured three dimensional semiconductor structure

According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

25 ENERGY STORAGE↗