Search NASA⌕ Search

SEARCH · Search NASA

Results for “Resonant tunneling”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6

Experimental results of a high Q quasioptical reflection cavity

A quasi-optical reflection cavity intended to be used as the resonant load of a submillimeter wavelength oscillator has been designed, constructed, and tested. The resonator consists of three elements in cascade: a high Q, high finesse folded Fabry-Perot resonator, a lower Q, low finesse Fabry-Perot resonator, and a Littrow mounted diffraction grating. The resonator exhibits a Q of 6600 and 2.5 dB of loss at 63 GHz. The design can be scaled to 1 THz, where waveguide structures become impractical, to serve as the resonator for high frequency quantum well resonant tunneling device oscillators.

Lee, Karen A.↗

Rotational and vibrational effects in the E 1Sigma(+)g-X 1Sigma(+)g two-photon transitions of H2, HD, and D2

This paper reports a theoretical study of the dependence of the E 1Sigma(+)g v(E) = 0, J-X 1Sigma(+)g, v(X),J transitions in H2, HD, and D2 on the initial vibrational and rotational quantum numbers v(X) and J. The results demonstrate the concerted nature of two-photon transitions. The magnitude of the two-photon transition moment increases with v(X) between 0 and 2, then decreases rapidly at higher v(X). The J dependence of the two-photon transition moment is most strongly affected by the changes in vibrational wave functions caused by centrifugal distortion of the vibrational potential. It is shown that the J variation can be used as a probe of resonant tunneling in the double-well potential of the E,F state.

Huo, Winifred M.↗

Quantum-well diode frequency multipliers - Varistor case

Local oscillators for heterodyne receivers at submillimeter wavelengths are typically made using a fundamental source followed by a harmonic frequency multiplier. An investigation of the required circuit embedding conditions for a possible new harmonic generator, the quantum-well resonant-tunneling diode, is summarized. A low-frequency multiplier has been tested that employs the resistive nonlinearity of the device as opposed to the reactive nonlinearity. The results show good agreement between practice and theory.

Batelaan, Paul D.↗

Simulation of electron transport in quantum well devices

Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

Miller, D. R.↗

Monolithic millimeter-wave diode grid frequency multiplier arrays

Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-barrier-varactor (MQBV) tripler, Schottky-quantum-barrier-varactor (SQBV) tripler, and resonant-tunneling-diode (RTD) tripler arrays, have been successfully fabricated with yields between 85 and 99 percent. Frequency doubling and/or tripling have been observed for all the arrays. Output powers of 2.4-2.6 W (eta = 10-18 percent) at 66 GHz with the BNN doubler and 3.8-10 W (eta = 1.7-4 percent) at 99 GHz with the SQBV tripler have been achieved.

Liu, Hong-Xia L.↗

Nanoelectronics: Opportunities for future space applications

Further improvements in the performance of integrated electronics will eventually halt due to practical fundamental limits on our ability to downsize transistors and interconnect wiring. Avoiding these limits requires a revolutionary approach to switching device technology and computing architecture. Nanoelectronics, the technology of exploiting physics on the nanometer scale for computation and communication, attempts to avoid conventional limits by developing new approaches to switching, circuitry, and system integration. This presentation overviews the basic principles that operate on the nanometer scale that can be assembled into practical devices and circuits. Quantum resonant tunneling (RT) is used as the center-piece of the overview since RT devices already operate at high temperature (120 degrees C) and can be scaled, in principle, to a few nanometers in semiconductors. Near- and long-term applications of GaAs and silicon quantum devices are suggested for signal and information processing, memory, optoelectronics, and radio frequency (RF) communication.

Frazier, Gary↗

Genetically Engineered Microelectronic Infrared Filters

A genetic algorithm is used for design of infrared filters and in the understanding of the material structure of a resonant tunneling diode. These two components are examples of microdevices and nanodevices that can be numerically simulated using fundamental mathematical and physical models. Because the number of parameters that can be used in the design of one of these devices is large, and because experimental exploration of the design space is unfeasible, reliable software models integrated with global optimization methods are examined The genetic algorithm and engineering design codes have been implemented on massively parallel computers to exploit their high performance. Design results are presented for the infrared filter showing new and optimized device design. Results for nanodevices are presented in a companion paper at this workshop.

Cwik, Tom↗

"Genetically Engineered" Nanoelectronics

The quantum mechanical functionality of nanoelectronic devices such as resonant tunneling diodes (RTDs), quantum well infrared-photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs) is enabled by material variations on an atomic scale. The design and optimization of such devices requires a fundamental understanding of electron transport in such dimensions. The Nanoelectronic Modeling Tool (NEMO) is a general-purpose quantum device design and analysis tool based on a fundamental non-equilibrium electron transport theory. NEW was combined with a parallelized genetic algorithm package (PGAPACK) to evolve structural and material parameters to match a desired set of experimental data. A numerical experiment that evolves structural variations such as layer widths and doping concentrations is performed to analyze an experimental current voltage characteristic. The genetic algorithm is found to drive the NEMO simulation parameters close to the experimentally prescribed layer thicknesses and doping profiles. With such a quantitative agreement between theory and experiment design synthesis can be performed.

Klimeck, Gerhard↗

Environment and Structure Influence in DNA Conduction

Results for transmission through the poly(G) DNA molecule are presented. We show that (i) periodically arranged sodium counter-ions in close proximity to dry DNA gives rise to a new conduction channel and aperiodicity in the counter-ion sequence can lead to a significant reduction in conduction, (ii) modification of the rise of B-DNA induces a change in the width of the transmission window, and (iii) specifically designed sequences are predicted to show intrinsic resonant tunneling behavior.

Adessi, C.↗

Conductance of Dry DNA: Role of Environment

This paper presents viewgraphs on the conductance of dry DNA and its effect on the surrounding environment. The topics include: 1) Approach; 2) Influence of Counter Ions; 3) Conductance Versus DNA Length; 4) Intrinsic Resonant Tunneling in Engineered DNA Sequence; and 5) Transmission Versus Energy.

Anantram, M. P.↗

Quantum and semi-classical transport in RTDs using NEMO 1-D

NEMO 1-D has been developed primarily for the simulation of resonant tunneling diodes, and quantitative and predictive agreements with experimental high performance, high current density devices have been achieved in the past.

transport tunneling quantum↗

Quantum and semi-classical transport in NEMO 1-D

The coupling of the fundamentally quantum mechanical nanoelectronic transport simulation through resonant tunneling diodes to semi-classical drift diffusion in the contacts is demonstrated.

quantum transport semi-classical transport tunneli↗