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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

High resolution, low cost solar cell contact development

The MIDFILM cell fabrication and encapsulation processes were demonstrated as a means of applying low-cost solar cell collector metallization. The average cell efficiency of 12.0 percent (AM1, 28 C) was achieved with fritted silver metallization with a demonstration run of 500 starting wafers. A 98 percent mechanical yield and 80 percent electrical yield were achieved through the MIDFILM process. High series resistance was responsible for over 90 percent of the electrical failures and was the major factor causing the low average cell efficiency. Environmental evaluations suggest that the MIDFILM cells do not degrade. A slight degradation in power was experienced in the MIDFILM minimodules when the AMP Solarlok connector delaminated during the environmental testing.

Mardesich, N.↗
NASA NTRS1981

A gallium phosphide high-temperature bipolar junction transistor

Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

Zipperian, T. E.↗
NASA NTRS1981

Characterization of ASEC BSR 2 ohm-cm silicon solar cells with dielectric wraparound contacts as a function of temperature and intensity

Twenty high performance BSR 2 ohm-cm silicon solar cells manufactured by ASEC were evaluated at 1 AU conditions and at low temperature and low intensities representative of deep space. These cells showed evidence of series resistance of 1 AU conditions and approximately 50% had reduced power outputs under deep space conditions. Average efficiency of these cells was 12.4% of 1 AU conditions of 1 SC/+25 C.

Whitaker, A. F.↗
NASA NTRS1983

Iron-copper metallization for flexible solar/cell arrays

The feasibility of a copper-base metallization for shallow-junction cells applied in flexible solar arrays in space is discussed. This type of metallization will reduce usage of precious metals (such as silver), increase case of bonding (by welding or by soldering) and eliminate heavy high Z interconnects (such as molybdenum). The main points of concern are stability against thermally induced diffusion of copper into silicon which causes degradation of shallow cell junctions, and low series resistance of the contact with semiconductor which promotes cell efficiency.

Lavendel, H. W.↗
NASA NTRS1983

A review and summary of cell and module mismatch losses from theoretical and experimental studies

Studies on power loss due to photovoltaic (PV) cell and module parameter mismatch were reviewed. The losses result from the current voltage (I-V) characteristics of cells which vary over a manufactured lot. The peak power and the peak power I-V point vary from cell to cell. The largest parameter variation occurs in the cell photocurrent generation and the most significant loss occurs in series connections since all cells are essentially limited by the lowest photocurrent. Most theoretical studies address only photocurrent variation effects, which consider shunt and series resistance, ideality factor and saturation current to be comparatively insignificant. One study is identified which specifically configured the study of mismatch loss effects. Experimental results consist of estimates based on limited data not taken from specially configured tests.

Lambarski, T. J.↗
NASA NTRS1984

Development of metallization process. FSA project, cell and module formation research area

New pastes were evaluated that contained additives to aid in the silicon-to-metallization contact. None were completely successful. A reevaluation of the molybdenum oxide paste and the two-step screen printing process was done. The oxide paste did not show promise. The two-step process enabled soldering of the cells but the cells still had a high series resistance. Pastes are on order from a different manufacturer.

Garcia, A., III↗
NASA NTRS1983

Photovoltaic conversion of laser to electrical power

Transmission of power in space using lasers will require devices for converting the laser power to electrical power. One such type of device for accomplishing this is the photovoltaic converter. This paper reviews photovoltaic converters and their application for conversion of monochromatic laser power to electrical power. Laser power densities greater than 1000 W/sq cm are considered. For a converter operated at 300 K a lower bandgap limit of 0.67 eV (1.80 micron) is defined. For ideal conditions, an efficiency of 47.8 percent is calculated for Nd/Liquid laser radiation incident on an Si converter. Several types of photovoltaic converters are discussed. Series resistance is identified as a major problem. Vertical multijunction converters are the most promising photovoltaic devices for use as laser to electric power converters.

Walker, G. H.↗
NASA NTRS1984

Formation of planar n(+) pockets in GaAs for mixer diode fabrication

A novel technique has been developed to produce n(+) 'pockets' in semiinsulating GaAs bulk material. This technique has produced thick pockets of highly conducting epitaxial material on the substrate surface. The pockets were formed by the growth of a liquid-phase epitaxial (LPE) layer into holes which had been etched into the substrate. Surface uniformity was obtained by chemo-mechanically polishing the substrate surface under tightly controlled conditions. Polishing rates as low as 0.2 micron/min have been obtained. Photographs taken of the pocket cross-sectional area have revealed that growth occurred throughout the entire pocket region. Growth was even found to have occurred along the irregularly shape walls of the packets. The continuous growth throughout the pockets coupled with the subsequent polishing of the substrate have produced exceptionally smooth and planar surfaces. Thicknesses as great as 10 microns have been obtained for the n(+) pockets using this technique. Mixer diodes have been fabricated onto these layers and tested. Preliminary dc measurements taken on these devices have yielded a zero-biased cutoff frequency (Fco) of 800 GHz with a series resistance (Rs) of 6 omega and a zero-biased capacitance (Co) of 30 fF.

Griffin, J. A.↗
NASA NTRS1985

Environmental tests of metallization systems for terrestrial photovoltaic cells

Seven different solar cell metallization systems were subjected to temperature cycling tests and humidity tests. Temperature cycling excursions were -50 deg C to 150 deg C per cycle. Humidity conditions were 70 deg C at 98% relative humidity. The seven metallization systems were: Ti/Ag, Ti/Pd/Ag, Ti/Pd/Cu, Ni/Cu, Pd/Ni/Solder, Cr/Pd/Ag, and thick film Ag. All metallization systems showed a slight to moderate decrease in cell efficiencies after subjection to 1000 temperature cycles. Six of the seven metallization systems also evidenced slight increases in cell efficiencies after moderate numbers of cycles, generally less than 100 cycles. The copper based systems showed the largest decrease in cell efficiencies after temperature cycling. All metallization systems showed moderate to large decreases in cell efficiencies after 123 days of humidity exposure. The copper based systems again showed the largest decrease in cell efficiencies after humidity exposure. Graphs of the environmental exposures versus cell efficiencies are presented for each metallization system, as well as environmental exposures versus fill factors or series resistance.

Alexander, P., Jr.↗
NASA NTRS1985

Design, fabrication, and performance of a whiskerless Schottky diode for millimeter and submillimeter wave applications

Design considerations, fabrication techniques, and performance predictions are presented for a planar whiskerless Schottky diode to be used (in radio astronomy applications) at 100-300 GHz. The anode and ohmic contacts are on the same side of the device, and proton bombardment is used to establish the divided surface (by making some regions of the GaAs wafer semiinsulating) prior to definition of a B-doped SiO2 finger, ohmic contacting, anode formation, and anode contact metallization (all using photolithographic techniques). The contributions of parasitic elements are calculated for a device with a 3.5-micron-deep n(+) layer doped at 2 x 10 to the 18th/cu cm, a 250-nm-thick epitaxial layer doped at 5 x 10 to the 16th/cu cm, and a 1-micron-radius anode (providing zero-bias junction capacitance 7 fE). It is predicted that such a device would have total series resistance 12.58 ohm and total shunt capacitance 1.37 fF, compared with 14.27 ohm and 0.93 fF for the corresponding whiskered device.

Mckinney, K.↗
NASA NTRS1987

Behavior of ion-implanted junction diodes in 3C SiC

p-n junction diodes have been formed by ion implantation of B or Al in 3C SiC and annealing at 1365 C. The current-voltage characteristics of the Al-implanted structures show little rectification. The B-implanted diodes show rectification, with ideality factors of 2.2 and higher, breakdown voltages between 5 and 10 V, and a series resistance of the order of 20 kohm. The current-voltage characteristics were measured between room temperature and 270 C. The extracted ideality factors increase with temperature.

Avila, R. E.↗
NASA NTRS1988

Millimeter-wave diode-grid phase shifters

Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A phase shift of 70 deg with a 7-dB loss was obtained at 93 GHz when the bias on the diode grid was changed from -3 V to 1 V. A simple transmission-line grid model, together with the measured low-frequency parameters for the diodes, was shown to predict the measured performance over the entire capacitive bias range of the diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies from 33 GHz to 141 GHz. This shows that the transmission-line model and the measured low-frequency diode parameters can be used to design an electronic beam-steering array and to predict its performance. An electronic beam-steering array made of a pair of grids using state-of-the-art diodes with 5-ohm series resistances would have a loss of 1.4 dB at 90 GHz.

Lam, Wayne W.↗
NASA NTRS1989

Low-Inductance Capacitor For Low Temperatures

Planar capacitor made on epoxy/fiberglass printed-circuit board. Planar design and flat copper plates ensure low inductance and low series resistance. Planar construction minimized effects of thermal contraction, and epoxy/fiberglass substrate ensured high breakdown voltage. Design is simple, and this type of capacitor easy for any printed-circuit-board facility to fabricate. Design suitable for any small-capacitance, high-voltage capacitor, whether operating at low or high temperature.

Rhodes, David B.↗
NASA NTRS1989

The 25 percent-efficient GaAs Cassegrainian concentrator cell

Very high-efficiency GaAs Cassegrainian solar cells have been fabricated in both the n-p and p-n configurations. The n-p configuration exhibits the highest efficiency at concentration, the best cells having an efficiency eta of 24.5 percent (100X, AM0, temperature T = 28 C). Although the cells are designed for operation at this concentration, peak efficiency is observed near 300 suns (eta = 25.1 percent). To our knowledge, this is the highest reported solar cell efficiency for space applications. The improvement in efficiency over that reported at the previous SPRAT conference is attributed primarily to lower series resistance and improved grid-line plating procedures. Using previously measured temperature coefficients, researchers estimate that the n-p GaAs cells should deliver approximately 22.5 percent efficiency at the operating conditions of 100 suns and T = 80 C. This performance exceeds the NASA program goal of 22 percent for the Cassegrainian cell. One hundred Cassegrainian cells have been sent to NASA as deliverables, sixty-eight in the n-p configuration and thirty-two in the p-n configuration.

Hamaker, H. C.↗
NASA NTRS1988

Millimeter-wave diode-grid frequency doubler

Monolithic diode grids were fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5 percent and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 ohms, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.

Jou, Christina F.↗
NASA NTRS1989

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy

An attempt is made to improve device efficiencies by depositing indium tin oxide onto epitaxially grown p-InP on p(+)-InP substrates. This leads to a reduction in the device series resistance, high-quality reproducible surfaces, and an improvement in the transport properties of the base layer. Moreover, many of the facets associated with badly characterized bulk liquid encapsulated Czochralski substrates used in previous investigations are removed in this way.

Li, X.↗
NASA NTRS1990

Peeled film GaAs solar cells for space power

Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

Wilt, D. M.↗