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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Trends in parts susceptibility to single event upset from heavy ions

New test data from the Jet Propulsion Laboratory (JPL), The Aerospace Corporation, Rockwell International (ANAHEIM) and IRT have been combined with published data of JPL and Aerospace to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. This data has been arranged to exhibit the SEU susceptibility of devices by function, technology and manufacturer. Clear trends emerge which should be useful in predicting future device performance.

Nichols, D. K.↗
NASA NTRS1986

1986 Annual Conference on Nuclear and Space Radiation Effects, 23rd, Providence, RI, July 21-23, 1986, Proceedings

The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.

Ellis, Thomas D.↗
NASA NTRS1986

The Galileo single-event upset solution and risk assessment

The Galileo probe will be subject to radiation fields and energetic particle bombardment during its outward bound journey and in orbit around Jupiter and its moons. To avoid the occurrence and propagation of effects of single event upset (SEU) bit state changes induced by the bombardments attempts were made to harden the Galileo electronics against SEUs. The hazards are especially acute for Schottky diode and low-power Schottky TTL parts. The preventive action options which were scheduled are reviewed, noting the selection of CMOS chips as replacements for SEU-susceptible devices. The simulation and risk assessment that were performed to evaluate the potential success of the replacements are summarized, with emphasis on the data employed to ensure the accuracy of the assessments and the predicted effects of SEUs in the various Galileo subsystems.

Burdick, Garry M.↗
NASA NTRS1988

Estimating Rates Of Single-Event Upsets

Mathematical model yields estimates of upper and lower bounds on rates of single-event upsets (SEU's) in logic circuits. SEU's are reversible changes in logic states, caused by single high-energy ions. Energetic ions passed through device along tracks perpendicular to surface, to determine parameters of model. Used to estimate rates caused by ions of various energies incident at arbitrary angles. Useful in design of integrated circuits as high-density memories for minimal susceptibility to bit errors.

Zoutendyk, John A.↗
NASA NTRS1988

Measuring Critical Charges For Single-Event Upsets

Concept for determining susceptibility of integrated circuits to single-event upsets (SEU's) based on direct measurement of critical charge causing upset. Test circuit is modified version of standard complementary metal-oxide/semiconductor static cell. Contains six transistors, connected to form latch that retains state of cell set by input pulses. Makes possible to evaluate vulnerability to SEU during design and development of digital equipment.

Buehler, Martin G.↗
NASA NTRS1988

New Mode For Single-Event Upsets

Report presents theory and experimental data regarding newly discovered mode for single-event upsets, (SEU's) in complementary metal-oxide/semiconductor, static random-access memories, CMOS SRAM's. SEU cross sections larger than those expected from previously known modes given rise to speculation regarding additional mode, and subsequent cross-section measurements appear to confirm speculation.

Zoutendyk, John A.↗
NASA NTRS1989

Spread Of Charge From Ion Tracks In Integrated Circuits

Single-event upsets (SEU's) propagate to adjacent cells in integrated memory circuits. Findings of experiments in lateral transport of electrical-charge carriers from ion tracks in 256K dynamic randon-access memories (DRAM's). As dimensions of integrated circuits decrease, vulnerability to SEU's increases. Understanding gained enables design of less vulnerable circuits.

Zoutendyk, John A.↗
NASA NTRS1990

Anomalies due to single event upsets

The description of single event upsets (SEUs) in the spacecraft Anomalies Handbook is reviewed. The basic mechanism involved in SEUs is summarized and discussed in terms of circuit analysis. Calculation of SEU rate is analytically described and discussed. Departures from single step function dependence in the SEU rate is addressed.

Robinson, P. A., Jr.↗
NASA NTRS1990

Single event induced transients in I/O devices - A characterization

The results of single-event upset (SEU) testing performed to evaluate the parametric transients, i.e., amplitude and duration, in several I/O devices, and the impact of these transients are discussed. The failure rate of these devices is dependent on the susceptibility of interconnected devices to the resulting transient change in the output of the I/O device. This failure rate, which is a function of the susceptibility of the interconnected device as well as the SEU response of the I/O device itself, may be significantly different from an upset rate calculated without taking these factors into account. The impact at the system level is discussed by way of an example.

Newberry, D. M.↗
NASA NTRS1991

Transient SEUs in a fiber optic system for space applications

The results of an investigation on the SEU sensitivity for a fiber optic operating system are reported. Measurements were made on the upset cross sections for the system in static and dynamic modes of operation. The heavy ion SEU test facility at Brookhaven and the proton facility at Harvard University were used in this study. Cross sections were obtained for Honeywell transmitter and reciever devices operating in a system at a frequency of 100 kHz. Both devices were independently irradiated. The results show that the dynamic mode was the worst case, and the receiver was the most sensitive part type in the system. The threshold linear energy transfer (LET) for the receiver was determined to be 1.6 MeV sq cm/mg for the three input signals used in the tests, which were: a continuous high state, a low state, and a 100 kHz square wave.

Label, Ken↗
NASA NTRS1994

Making A D-Latch Sensitive To Alpha Particles

Standard complementary metal oxide/semiconductor (CMOS) D-latch integrated circuit modified to increase susceptibility to single-event upsets (SEU's) (changes in logic state) caused by impacts of energetic alpha particles. Suitable for use in relatively inexpensive bench-scale SEU tests of itself and of related integrated circuits like static random-access memories.

Buehler, Martin G.↗
NASA NTRS1993

Complementary heterojunction FET technology for space application

A 32-bit serial integer multiplier was designed to investigate the yield and performance of complementary heterojunction FET (CHFET) technology. This is the largest reported CHFET logic circuit. The maximum operating frequency was 500 MHz. Very low power dissipation of 3 mW was obtained at 5 MHz operation. Single-event upset (SEU) characteristics of CHFET devices and latches were also measured and indicates the potential for SEU hard circuits for space and military applications.

Larue, George↗
NASA NTRS1996

The Single Event Effect Characteristics of the 486-DX4 Microprocessor

This research describes the development of an experimental radiation testing environment to investigate the single event effect (SEE) susceptibility of the 486-DX4 microprocessor. SEE effects are caused by radiation particles that disrupt the logic state of an operating semiconductor, and include single event upsets (SEU) and single event latchup (SEL). The relevance of this work can be applied directly to digital devices that are used in spaceflight computer systems. The 486-DX4 is a powerful commercial microprocessor that is currently under consideration for use in several spaceflight systems. As part of its selection process, it must be rigorously tested to determine its overall reliability in the space environment, including its radiation susceptibility. The goal of this research is to experimentally test and characterize the single event effects of the 486-DX4 microprocessor using a cyclotron facility as the fault-injection source. The test philosophy is to focus on the "operational susceptibility," by executing real software and monitoring for errors while the device is under irradiation. This research encompasses both experimental and analytical techniques, and yields a characterization of the 486-DX4's behavior for different operating modes. Additionally, the test methodology can accommodate a wide range of digital devices, such as microprocessors, microcontrollers, ASICS, and memory modules, for future testing. The goals were achieved by testing with three heavy-ion species to provide different linear energy transfer rates, and a total of six microprocessor parts were tested from two different vendors. A consistent set of error modes were identified that indicate the manner in which the errors were detected in the processor. The upset cross-section curves were calculated for each error mode, and the SEU threshold and saturation levels were identified for each processor. Results show a distinct difference in the upset rate for different configurations of the on-chip cache, as well as proving that one vendor is superior to the other in terms of latchup susceptibility. Results from this testing were also used to provide a mean-time-between-failure estimate of the 486-DX4 operating in the radiation environment for the International Space Station.

Kouba, Coy↗
NASA NTRS1997

Antifuse FPGA for Space Applications

This paper presents viewgraphs of Antifuse FPGA (Field Programmable Gate Array) for Space Applications. The topics include: 1) A32140DX TID Test; 2) A1280XL Proton Test; 3) SEU (Single Event Upsets) Rate Calculation; 4) Recent Products Test; 5) A1460A TID (Traveling Ionospheric Disturbances) Test; 6) I100 Proton Test; 7) 100/RHI100 SEU Test; 8) I100/RH100 TID Test; 9) A1020S TID Test; 10) TID Charge Pump Failure; 11) Radiation Testing; and SEE (Single Event Effects) Test Setup.

Wang, Jih-Jong↗
NASA NTRS1999

Cosmic Journeys. To the Edge of Gravity, Space and Time: Structure and Evolution of the Universe Roadmap: 2003-2023

The Roadmap for the Structure and Evolution of the Universe (SEU) Theme embraces three fundamental, scientific quests: (1) To explain structure in the Universe and forecast our cosmic destiny, (2) To explore the cycles of matter and energy in the evolving Universe, (3) To examine the ultimate limits of gravity and energy in the Universe. We develop these quests into six focused research campaigns: (1) Identify dark matter and learn how it shapes galaxies and systems of galaxies, (2) Explore where and when the chemical elements were made (3) Understand the cycles in which matter, energy, and magnetic field are exchanged between stars and the gas between stars, (4) Discover how gas flows in disks and how cosmic jets are formed, (5) Identify the sources of gamma-ray bursts and high-energy cosmic rays, (6) Measure how strong gravity operates near black holes and how it affects the early Universe. These campaigns lead to a portfolio of future major missions of great scientific interest and popular appeal, strongly endorsed by the scientific community. Many have undergone significant initial study. Some are in a state of readiness that make them ideal candidates for the present Office of Space Science Strategic Plan; others may well feature in the next Plan. Each provides a golden scientific opportunity to advance our understanding of the Universe. We have identified three top-priority near-term science objectives together with missions to accomplish these goals. The three problems span a diverse range of subdisciplines, of observational technique, of timescales, and of cost, and are thus complementary, forming a coherent core program for the SEU theme in the 2003-2007 timeframe.These are : (1) Obtain precise measures of the chemical composition and physical conditions in objects ranging from the closest stars to the most distant quasars, (2) Utilize gravitational radiation as a probe of supermassive blackholes throughout the universe, (3) determine the nature of the highest energy cosmic rays. We also describe a small number of exciting missions which are strong candidates for new start status in the midterm, 2008-2013, pending technology development. These missions tackle fundamental problems through the entire electromagnetic spectrum, from the radio through gamma rays, and in many cases develop fascinating technologies with applicability not only elsewhere in NASA but outside of space science as well. Finally, we describe a set of "vision missions," which stretch our scientific imagination and set technology challenges for our field.

Source record↗
NASA NTRS2001

NASA Structure and Evolution of the Universe Theme: Science Overview

The NASA Office of Space Science Structure and Evolution of the Universe (SEU) theme covers a wide variety of scientific investigations, from the nearest bodies to the farthest observable distances just after the time of the Big Bang. SEU supports experiments that sense radiation of all wavelengths, together with particle and gravitational wave detection. Recently completed road mapping and strategic planning exercises have identified a number of near- and medium-term space initiatives for the 2003-2023 time frame. Each of these experiments pushes the state of the art technically, but will return incredible new insights on the formation and evolution of the universe, as well as probe fundamental laws of physics in regimes never before tested. The scientific goals and technological highlights of each mission are described.

White, Nicholas E.↗
NASA NTRS2003

In-Flight Observations of Long-Term Single Event Effect(SEE)Performance on Orbview-2 and Xray Timing Explorer(XTE)Solid State Recorders (SSR)

This paper presents Single Event Effect (SEE) in-flight data on Solid State Recorders (SSR) that have been collected over a long period of time for two NASA spacecraft: Orbview-2 and XTE. SEE flight data on solid-state memories give an opportunity to study the behavior in space of SEE sensitive commercial devices. The actual Single Event Upset (SEU) rates can be compared with the calculated rates based on environment models and ground test data. The SEE mitigation schemes can also be evaluated in actual implementation. A significant amount of data has already been published concerning observed SEE effects on memories in space. However, most of the data presented cover either a short period of time or a small number of devices. The data presented here has been collected on a large number of devices during several years. This allows statistically significant information about the effect of space weather fluctuations on SEU rates, and the effectiveness of SEE countermeasures used to be analyzed. Only Orbview-2 data is presented in this summary. XTE data will be included in the final paper.

Poivey, Christian↗
NASA NTRS2003

Evaluation of an Ultra-Low Power Reed Solomon Encoder for NASA's Space Technology 5 Mission

Radiation test results and analyses are presented for ultra-low power Reed Solomon encoder circuits that are being considered for use on the Space Technology 5 (ST5) mission. The total ionizing dose tolerance is in excess of 100 krad(Si) and is due to the low supply voltage and the use of back-bias, which suppresses radiation-induced leakage currents in the n-channel devices. The circuits do not latch-up for ion LET values of at least 90 MeV-sq cm/mg. A hardened-by-design approach to SEU has achieved an upset threshold of about 20 MeV-sq cm/mg. The SEU rate expected for these circuits in the geosynchronous transfer orbit of ST5 is low.

Lei, K. E.↗