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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Modeling and Analysis of a Thermophotovoltaic Integrated Self-Powered Furnace

This work investigates the energy efficiency and carbon reduction potential of self-powered residential building heating equipment using a thermodynamic modeling approach. An integrated thermophotovoltaic power module and residential scale furnace system (40,000 Btu/h) were modeled and studied in detail to assess the influence of different design configurations on primary energy efficiency. Operational characteristics such as total power generation, electrical efficiency, and heat recovery were examined in a self-powered system configuration. A sensitivity analysis was conducted to determine the influence of the electric grid’s carbon dioxide footprint (carbon intensity) and the cost of electricity on the environmental, as well as the economic, benefit associated with the self-powered configuration. Compared with a traditional furnace powered by an electric grid at a carbon intensity of 0.5 kg CO 2eq /kWh EL , the self-powered furnace was shown to decrease the annual carbon dioxide emissions by approximately 550 kg (~75% reduction), while also saving more than USD 200 in utility expenses, annually. Additionally, the carbon emission reduction potential of blending different concentrations of hydrogen in natural gas fuel was also studied.

14 SOLAR ENERGY↗
NASA NTRS1980

Low-cost conversion of polycrystalline silicon into sheet by HEM and FAST

The conversion of polycrystalline silicon to sheet form (the wafers produced are 10 cm x 10 cm cross section with minimum surface damage) by the Heat Exchanger Method (HEM) and multi-wire Fixed Abrasive Slicing Technique (FAST), as a means of reducing the cost of solar arrays for adaptation of photovoltaic technology for terrestrial applications, is given. A schematic of a HEM furnace, which includes a silica crucible, and developments in the HEM process are presented. A new machine for slicing with wire was designed and fabricated. The high-speed slicer has been used to slice 19 wafers per cm from 10 cm diameter crystals. Both HEM and FAST are low-cost processes and they have the potential of giving one of the lowest add-on costs ($6.24 and $6.48 per square meter of sheet respectively, with the combination add-on cost of $14.87 per square meter) of this conversion.

Khattak, C. P.↗
NASA NTRS1985

Crystal Furnace

A "melt recharging" technique which eliminates the cooldown and heating periods in a crystal "growing" crucible, resulted from a Jet Propulsion Laboratory (JPL)/Kayex Corporation program. Previously, the cost of growing the silicon solar cells had been very high. The JPL/Kayex system improved productivity by serially growing crystals from the same crucible using a melt recharger which made it possible to add raw silicon to an operating crucible. An isolation value, developed by Kayex, allowed the hopper to be lowered into the crucible without disturbing the inert gas atmosphere. The resulting product, a CG6000 crystal growing furnace, has become the company's major product.

Source record↗
NASA NTRS1975

Research and development of low cost processes for integrated solar arrays

Si reduction, purification and sheet generation work has been concentrated on gaining information about a reduction process combined with purification (higher purity arc furnace with gas blowing and gradient freezing), transport process with purification and polycrystal sheet growth potential (SiF2), plastic deformation for sheet generation, and float zone sheet recrystallization.

Wolf, M.↗
DOE OSTI2022

Electrical Analysis of Pulsed Laser Annealed Poly-Si:Ga/SiOx Passivating Contacts

High-efficiency single crystalline silicon (c-Si) solar cells require precise control of dopant diffusion profiles and highly active doping concentrations through thermal annealing. Conventional furnace annealing has been successfully employed for dopant diffusion in aluminum back-surface field (Al-BSF), passivated emitter and rear contact (PERC), and Topcon cells. However, furnace annealing limits some next-generation polycrystalline silicon (poly-Si) on SiOx passivating contacts. This limitation largely affects p-type passivating contacts by not being able to: 1) control the dopant diffusion accurately to prevent B segregation at the SiOx and c-Si interface; and 2) provide highly activated doping concentrations for low contact resistivity. In this contribution, we use a nanosecond excimer laser to examine the passivation quality and electrical performance of both B- and Ga-doped poly-Si/SiOx passivating contacts. The core of this method is to take advantage of the nonequilibrium nature of the anneal through rapid melting and recrystallizing the poly-Si in a short timescale and to achieve doping concentrations above the solid solubility limit. Simulations were performed on polished surfaces to visualize the doping diffusion profiles under different laser conditions, and secondary ion mass spectrometry (SIMS) was used to verify the experimental diffusion profiles post pulsed laser melting (PLM). The results show the dopant diffusion profiles can be tuned precisely through PLM. The electrical analysis using VdP-Hall measurements reveals that the active doping concentration reached 10^21 cm-3 for B and ~2×10^21 cm-3 for Ga in poly-Si, far exceeding their solid solubility limit in Si, with a nearly 100% dopant activation achieved for B, and 20% for Ga. This highly activated dopant profile results in a low contact resistivity of <15 mO·cm^2 for B-doped contacts and <40 mO·cm^2 for Ga-doped contacts. We demonstrate that the passivation quality of the laser annealed contacts shows a linear dependency with the laser energy density and the number of pulses. PLM was also performed on random pyramid textured samples, and we found that preferential melting exists for the tips of pyramids, which can be pursued further for selective pinhole opening. Additionally, we perform thermal stability tests of these hyperdoped passivating contacts and show that under certain laser conditions, the B-doped samples exhibit good thermal stability with near full activation for temperatures up to 800°C. Lastly, we transfer this technique to a larger area by overlapping laser spots and show uniform passivation quality and electrical performance. We are currently implementing this PLM annealed p-type passivating contacts into double-side back-junction poly-Si/SiOx passivating contact devices. Our results show that PLM can not only enable the next generation of high-efficiency c-Si photovoltaics technology but can also benefit the c-Si integrated circuit industry through hyperdoping other semiconductors with atoms that may otherwise have a low solubility.

doping diffusion profile↗
DOE OSTI2025

Front Side Copper Metallization Paste for Silicon Solar Cells (CRADA Final Report)

Adoption and testing of copper (Cu) metallization pastes on existing research and development (R&D) or production lines is hindered by the perceived idea that Cu will contaminate the equipment. The objective of this work is to prove if Cu from the pastes will contaminate and degrade the silver metallized cells being produced in the same firing furnace.

14 SOLAR ENERGY↗
DOE OSTI2026

Techno-Economic Comparison of Molten-Salt Electrolysis and Carbothermic Reduction for the Production of Metallurgical-Grade Silicon

Metallurgical-grade silicon (MG-Si) is an important source material for many industrial applications, including the manufacture of alloys, solar photovoltaics, and electronics. The process to refine raw materials into MG-Si is energy-intensive, with the predominant method of submerged-arc furnaces requiring energy consumption of approximately 11–13 kWh/kg Si. Recent research has discussed promising methods for reducing the energy required for the silicon production process, including the use of molten-salt electrolysis (MSE), a technique that offers potential savings in energy consumption without requiring carbon inputs for the process. This paper presents a techno-economic study of a potential industrial-scale MSE plant for MG-Si production to evaluate the trade-offs between capital and operating costs of the system. Capital costs are sourced from recent MG-Si plants and an existing cost model developed for MSE processes that includes the size of the plant and the operating temperature among its inputs. The results show that MSE technology has the potential to be an economically cost-competitive option for MG-Si production if the technology successfully scales to industrial production and matures enough to allow for financing costs similar to that of a comparably sized submerged-arc furnace plant.

14 SOLAR ENERGY↗
NASA NTRS1980

Low-cost ion implantation and annealing technology for solar cells

Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.

Kirkpatrick, A. H.↗
DOE OSTI2022

Implementation of a Model Predictive Control Strategy to Regulate Temperature Inside Plug-Flow Solar Reactor With Countercurrent Flow

Abstract Solar-driven thermochemical energy storage systems are proven to be promising energy carriers (solar fuels) to utilize solar energy by using reactive solid-state pellets. However, the production of solar fuel requires a quasi-steady-state process temperature, which represents the main challenge due to the transient nature of solar power. In this work, an adaptive model predictive controller (MPC) is presented to regulate the temperature inside a tubular solar reactor to produce solid-state solar fuel for long-term thermal storage systems. The solar reactor system consists of a vertical tube heated circumferentially over a segment of its length by concentrated solar power, and the reactive pellets (MgMn2O4) are fed from the top end and flow downwards through the heated tube. A countercurrent flowing gas supplied from the lower end interacts with flowing pellets to reduce it thermochemically at a temperature range of 1000—1500 °C. A low-order physical model was developed to simulate the dynamics of the solar reactor including the reaction kinetics, and the proposed model was validated numerically by using a 7-kW electric furnace. The numerical model then was utilized to design the MPC controller, where the control system consists of an MPC code linked to an adaptive system identification code that updates system parameters online to ensure system robustness against external disturbances (sudden change in the flow inside the reactor), model mismatches, and uncertainty. The MPC controller parameters are tuned to enhance the system performance with minimum steady-state error and overshoot. The controller is tested to track different temperature ranges between 500 °C and 1400 °C with different particles/gas mass flowrates and ramping temperature profiles. Results show that the MPC controller successfully regulated the reactor temperature within ± 1 °C of its setpoint and maintained robust performance with minimum input effort when subjected to sudden changes in the amount of flowing media and the presence of chemical reaction.

Engineering↗
DOE OSTI2022

Reticulated porous lanthanum strontium manganite structures for solar thermochemical hydrogen production

Porous ceramic foams are utilized in various fields and applications due to their advantageous properties such as high porosity, high specific surface area, and controlled permeability. Non-stoichiometric oxide foams are of particular interest for the solar thermochemical production of hydrogen in directly irradiated solar receivers due to their enhanced heat transfer capabilities and structural integrity. Here we report the fabrication of lanthanum strontium manganite replica foams and their solar thermochemical water splitting performance. Highly porous (>80%) foams were produced with controlled structure and tested in a high temperature water splitting furnace to demonstrate stability and overall performance. The temperature profile of the burnout and sintering of the foam structure were altered based on simultaneous differential scanning calorimetry and thermal gravimetry analysis. Two-step sintering was used both to retain micron-sized pores (D50 = 0.4 μm) on the foam's struts and to limit grain growth to a grain size of ~1 μm. The structural characteristics were confirmed by porosimetry and scanning electron microscopy. The foams were repeatedly cycled, producing approximately 200 μmol/g of H 2 per cycle. Water splitting performance was tested for 50 cycles and approximately 35 h at 1400 °C. No statistical difference in the effective hydrogen production per cycle was observed, which is promising for long-term redox cycle stability.

08 HYDROGEN↗
NASA NTRS1984

Simultaneous junction formation

High-risk, high-payoff improvements to a baseline process sequence of simultaneous junction formation of silicon solar cells are discussed. The feasibility of simultaneously forming front and back junctions of solar cells using liquid dopants on dendritic web silicon was studied. Simultaneous diffusion was compared to sequential diffusion. A belt furnace for the diffusion process was tested.

Campbell, R. B.↗
NASA NTRS2005

Nanotube/Quantum Dot-Polymer Solar Cells

Single wall carbon nanotubes used or this study were synthesized using the pulse laser vaporization technique. The as-produced SWNTs were collected from the condensed region on the quartz tube outside the furnace and purified by modification of the previously reported procedure. Preparation of the SWNT-P3OT composite solutions was performed using a series of mixing and sonication steps as previously demonstrated for other SWNT-polymer systems. Device fabrication involved the use of commercially-obtained, high quality (i.e., less than 10 W/sq.) ITO-coated polyethylene terapthalate (PET) substrates. Initially, an intrinsic layer of pristine P3OT is spray deposited (approx. 1-2 mL of the 15 mg/mL solution) onto the masked, 1 sq in. active area of the substrate. This is followed with spray deposition of the SWNT-P3OT composite solutions at similar volumes. As seen completion of the solar cell occurs when aluminum contacts (typical thicknesses of l000A) are applied to the IT0 and SWNT-P3OT composite film layers. The homogeneous distribution of SWNTs in a polymer matrix is dependent upon the ability of the polymer chain to associate with the SWNT superstructure. Stable composite dispersions of 0.1 % and 1.0% w/w SWNTs in P3OT were produced and analyzed in this study. Optical spectroscopy was conducted to observe the SWNT doping level effects on the absorption properties and infer potential electronic interactions between dopant and polymer. Shown is an overlay of these spectra where the pristine P3OT shows strong optical absorption at energies less than 2 eV. As expected, variation in absorption properties for the SWNT-P3OT composites is observed as the doping level increases. Through modification of the SWNT doping level in the polymer, it is possible to alter the absorption pattern of these composite materials. In fact, at these relatively low doping levels, the P3OT shows a significant enhancement in absorption through the near-IR and visible regions. The gray curve for purified SWNTs is offset from the other three for clarity, but indicates the typical complex pattern observed for this spectral range.

Bailey, Sheila G.↗
NASA NTRS1986

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

Rustioni, M.↗
NASA NTRS1986

Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell program

Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.

Duncan, C. S.↗
NASA NTRS1995

The origin of the solar wind

The high speed solar wind, which is associated with coronal holes and unipolar interplanetary magnetic field, has now been observed in situ beyond 0.3 a.u. and at latitudes up to 80 degrees. Its important characteristics are that it is remarkably steady in terms of flow properties and composition and that the ions, especially minor species, are favored in terms of heating and acceleration. We have proposed that the high speed wind, with its associated coronal holes, forms the basic mode of solar wind flow. In contrast, the low speed wind is inherently non-stationary, filamentary and not in equilibrium with conditions at the coronal base. It is presumably the result of continual reconfigurations of the force-free magnetic field in the low-latitude closed corona which allow trapped plasma to drain away along transiently open flux tubes. Observations of high speed solar wind close to its source are hampered by the essential heterogeneity of the corona, even at sunspot minimum. In particular it is difficult to determine more than limits to the density, temperature and wave amplitude near the coronal base as a result of contamination from fore- and back-ground plasma. We interpret the observations as indicating that the high speed solar wind originates in the chromospheric network, covering only about 1% of the surface of the sun, where the magnetic field is complex and not unipolar. As a result of small-scale reconnection events in this 'furnace', Alfven waves are generated with a flat spectrum covering the approximate range 10 kHz to 10 Hz. The plasma is likely to be produced as a result of downwards thermal conduction and possibly photoionization at the top of the low density chromospheric interface to the furnace, thus controlling the mass flux in the wind. The immediate source of free (magnetic) energy is in the form of granule-sized loops which are continually carried into the network from the sides. The resulting wave spectrum is such that energy can be efficiently transferred to the ions within a few solar radii of the base of the corona, favoring heavy species and creating stable, fast solar wind.

Axford, W. I.↗
DOE OSTI2022

Simulating a solar parabolic trough collector plant used for industrial process heat using an optimized operating scheme that utilizes flexible heat integration

This study focuses on the modeling and simulation of a novel design and operation of a solar industrial process heat (SIPH) plant that uses a parabolic trough collector system for generating process heat. The SIPH plant incorporates flexible heat integration (FHI) by having two options for heat sinks as well as a flexible collection temperature for the heat transfer fluid. Leveraging the degrees of freedom created by FHI allows an optimized operating scheme to be created which maximizes the solar heat delivered to the industrial processes. Yearly results for a 27 MW-t plant located in Salt Lake City, UT are simulated for a base case and a case utilizing optimized FHI. For the main process temperature case presented, FHI increases the total solar share by 13.0% and reduces the levelized cost of heat of the SIPH plant by 10.4% relative to the base case. Furthermore, three case study days are presented which highlight how FHI maximizes solar share, specifically during mornings, afternoons, and days with intermittent solar conditions. An environmental analysis is also performed showing that the SIPH plant can reduce harmful emissions by 15.4% for the base case and 17.4% for the FHI case compared to a plant that only utilizes a natural gas furnace for process heat. Overall, the work thoroughly explores an effective operating scheme for a SIPH plant, helping to make it more economical and environmentally beneficial.

14 SOLAR ENERGY↗
NASA NTRS1975

Ultraviolet solar identifications based on extended absorption series observed in the laboratory spectrum of Si I

The absorption spectrum of Si I in the wavelength region between 1500 and 1900 A has been photographed at high resolution. The silicon vapor was produced in a 122-cm-long King furnace at 1800 to 2300 C. Forty-two Rydberg series have been observed from the ground state terms 3p(2)3P and 1D to terms associated with the 3pns and 3pnd configurations. All of the series from these configurations with J less than 4 have been extended with the 3pnd 3D(3) levels reaching n = 56. Numerous perturbations have been observed. This laboratory work has provided the basis for extending the identification of silicon lines in the solar spectrum. Nearly all lines found in the laboratory spectrum are also found in rocket spectrograms of the solar chromosphere. More than 300 lines have been attributed to Si I. The excellent correlation between laboratory and solar Si I lines is illustrated.

Moore, C. E.↗
NASA NTRS2014

Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Magnetic Fields

Solar cells made from directionally solidified silicon cover 57% of the photovoltaic industry's market [1]. One major issue during directional solidification of silicon is the precipitation of foreign phase particles. These particles, mainly SiC and Si3N4, are precipitated from the dissolved crucible coating, which is made of silicon nitride, and the dissolution of carbon monoxide from the furnace atmosphere. Due to their hardness and size of several hundred micrometers, those particles can lead to severe problems during the wire sawing process for wafering the ingots. Additionally, SiC particles can act as a shunt, short circuiting the solar cell. Even if the particles are too small to disturb the wafering process, they can lead to a grit structure of silicon micro grains and serve as sources for dislocations. All of this lowers the yield of solar cells and reduces the performance of cells and modules. We studied the behaviour of SiC particle depots during float-zone growth under an oxide skin, and strong static magnetic fields. For high field strengths of 3T and above and an oxide layer on the sample surface, convection is sufficiently suppressed to create a diffusive like regime, with strongly dampened convection [2, 3]. To investigate the difference between atomically rough phase boundaries and facetted growth, samples with [100] and [111] orientation were processed.

Jauss, T.↗