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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Tracking the evolution from isolated dimers to many-body entanglement in $\mathrm{NaLu}_x \mathrm{Yb}_{1-x}\mathrm{Se_2}$

Here, we synthesize homogeneous compositions of NaLu x Yb 1-x Se 2 , connecting nonmagnetic NaLuSe 2 to the triangular lattice spin liquid candidate NaYbSe 2 . Thermal and magnetic properties are studied as the system evolves from one with dilute magnetic defects to one of a dense magnetic lattice. The field- and temperature-dependent heat capacity show the carriers of entropy cross over from isolated magnetic ions to a correlated lattice born from spin dimers. For the dilute system we estimate the single-ion anisotropy (g ⟂ /g ∥ =3.13) and also the dimer exchange couplings J ⟂ (=5.4 K) and J ⟂ (=9.6 K), in order to draw comparison to the half-doped and full magnetic compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Study of Indium Chloride Vapor Treatment on Cu(In,Ga)Se 2 Semiconductor Thin Films

The recrystallization by indium chloride of Cu(In,Ga)Se 2 thin films deposited by co-evaporation at 350°C was studied. The process of recrystallization consists of the postdeposition treatment of CIGS sample by InCI3 vapor for 30 minutes with emphasis on grain growth. Here, the treatment resulted in uniform increased grain size and improved crystallinity. XRD measurements suggests the formation of indium rich phase. Dynamic SIMS were also performed to further understand the process, phase separation and the extent of gallium depletion.

14 SOLAR ENERGY↗
DOE OSTI2023

Chemical and Electronic Structure at the Interface between a Sputter-Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se) 2 Solar Cell Absorber

The chemical and electronic structure of the interface between a sputter-deposited Zn(O,S) buffer layer and an industrial Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber for thin-film solar cells is investigated with X-ray and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X-ray emission spectroscopy. We find a CIGSSe absorber surface band gap of 1.61 (±0.14) eV, which is significantly increased as compared to the minimal value derived with bulk-sensitive methods (≈1.1 eV). We find no indication for diffusion of absorber elements into the buffer layer. Surface- and bulk-sensitive measurements of the buffer layer suggest the presence of S-Zn and S-O bonds in the Zn(O,S) layer. We find that the naturally existing downward band bending toward the CIGSSe absorber surface is increased by the formation of the interface, likely enhancing carrier separation under illumination. We also derive a flat conduction band alignment, in line with the reported high conversion efficiencies of corresponding large-area solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Using hole injection layers for decreased metastability and higher performance in Cu(In,Ga)Se 2 devices

In this work, modifications to the buffer structure in Cu(In,Ga)Se 2 (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.

36 MATERIALS SCIENCE↗
DOE OSTI2021

In-plane plasmon coupling in topological insulator Bi 2 Se 3 thin films

The surface states of the 3D topological insulator (TI), Bi 2 Se 3 , are known to host two-dimensional Dirac plasmon polaritons (DPPs) in the terahertz spectral range. In TI thin films, the DPPs excited on the top and bottom surfaces couple, leading to an acoustic mode and an optical plasmon mode. Vertical coupling in these materials is, therefore, reasonably well-understood, but in-plane coupling among localized TI DPPs has yet to be investigated. In this paper, we demonstrate in-plane DPP coupling in TI stripe arrays and show that they exhibit dipole–dipole type coupling. Here, the coupling becomes negligible when the lattice constant is greater than approximately 2.8 times the stripe width, which is comparable to results for in-plane coupling of localized plasmons excited on metallic nanoparticles or graphene plasmon polaritons. This understanding could be leveraged for the creation of TI-based metasurfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Magnetic field dependence of low-energy magnons, anisotropic heat conduction, and spontaneous relaxation of magnetic domains in the cubic helimagnet ZnCr 2 Se 4

Here, anisotropic low-temperature properties of the cubic spinel helimagnet ZnCr 2 Se 4 in the single-domain spin-spiral state are investigated by a combination of neutron scattering, thermal conductivity, ultrasound velocity, and dilatometry measurements. In an applied magnetic field, neutron spectroscopy shows a complex and nonmonotonic evolution of the spin-wave spectrum across the quantum-critical point that separates the spin-spiral phase from the field-polarized ferromagnetic phase at high fields. A tiny spin gap of the pseudo-Goldstone magnon mode, observed at wave vectors that are structurally equivalent but orthogonal to the propagation vector of the spin helix, vanishes at this quantum critical point, restoring the cubic symmetry in the magnetic subsystem. The anisotropy imposed by the spin helix has only a minor influence on the lattice structure and sound velocity but has a much stronger effect on the heat conductivities measured parallel and perpendicular to the magnetic propagation vector. The thermal transport is anisotropic at T≲ 2K, highly sensitive to an external magnetic field, and likely results directly from magnonic heat conduction. We also report long-time thermal relaxation phenomena, revealed by capacitive dilatometry, which are due to magnetic domain motion related to the destruction of the single-domain magnetic state, initially stabilized in the sample by the application and removal of magnetic field. Our results can be generalized to a broad class of helimagnetic materials in which a discrete lattice symmetry is spontaneously broken by the magnetic order.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Studying the Recrystallization of Cu(InGa)Se 2 Semiconductor Thin Films by Silver Bromide In-situ Treatment

Cu(In,Ga)Se 2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2 nd and 3 rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Altogether, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.

14 SOLAR ENERGY↗
DOE OSTI2022

A thermodynamic evaluation of metal halides for the recrystallization of Cu(In,Ga)Se 2

CdTe films are deposited at low temperatures and recrystallized to photovoltaic device quality using CdCl 2 treatments, leading to competitive manufacturing costs. Cu(In,Ga)Se 2 (CIGS) typically requires high-temperature, low-rate depositions to produce high-efficiency devices, resulting in higher costs. A similar metal halide treatment of CIGS has been demonstrated by us previously for some metal halide sources. To understand and optimize the process, a thermodynamic evaluation of candidate metal halides for such treatments is presented as a guide for their selection. By comparing bond dissociation energies, mono- and di-halide compounds are proposed to be ideal compounds to act as transport agents. Known recrystallization and temperature reduction benefits by Ag alloying suggests that Ag-halides should be used to aid transport of all species. The high vapor pressure and mobility of Ga compounds still poses a problem for metal halide treatment resulting in Ga etching and removal of intentional Ga gradients. Less severe but similar issues with In compounds may occur. As a result, Cu compounds have low vapor pressures which may limit transport, however, Cu is highly mobile in CIGS and recrystallization still occurs.

14 SOLAR ENERGY↗
DOE OSTI2020

Impact of K-Optimization on Trap Concentration in (Ag,Cu)(In,Ga)Se 2 Solar Cells

Recent progress has been made in improving efficiency in Cu(In,Ga)Se 2 (CIGS) absorbers with steady increases in peak efficiency. One way this has been achieved is by adding Ag to CIGS (ACIGS) to achieve higher V OC . However, these efficiencies are still well below the Shockley-Queisser efficiency limit, and traps acting as recombination centers and compensating centers are one thing limiting the solar efficiency. Past research in CIGS has shown that alkali treatment can improve the efficiency and metastability problems in CIGS, but less is understood about the role of alkali treatments in ACIGS. Here, we investigate the impact of potassium in ACIGS through its impact on trap incorporation and minority carrier lifetime. The samples in this study were grown in a roll-to-roll coater with Mo, ACIGS, CdS, and ZnO structure. Both cells were grown identically except the second (K-optimized) cell was grown with increased K-doping of the Mo contact and was more Cu-poor near the surface to optimize the K profile. This resulted in an efficiency increase from 16.8% to 18.7% for the K-optimized cell, which was mostly due to a 65 mV V OC increase. The doping profile showed a 2X increase in acceptor concentration of the K-optimized cell (2.5×10 15 cm -3 ) which suggests that the K was better incorporated into the ACIGS after these optimizations. To characterize the traps in these cells, deep level transient and optical spectroscopy were used. The DLOS measurements showed an EV+0.98 eV trap whose concentration was reduced 10X in the K-optimized cell (4×10 14 cm -3 ). This is consistent with previous results from the alkali treatment in CIGS, which also showed a decrease in near-conduction band trap concentration [1], but the reduction was larger than previous studies possibly indicating the combination of K and Cu-poor surface may both have aided in reducing the EV+0.98 eV trap concentration. The other primary trap is the mid-gap trap (EV+0.58 eV), which was quantified using DLTS. Its concentration decreased from 9×10 13 cm -3 to 4×10 13 cm -3 in the K-optimized sample, which is a 2X reduction. Previous studies have shown this trap is likely an efficient recombination center [2], which makes sense because it is near mid-gap. This trap has also been associated with V OC instability and reduction, so reducing this trap concentration is essential to achieve high V OC and cell efficiency. To help confirm this association, time-resolved photoluminescence measurements have shown in this sample set and a previous study that the minority carrier lifetime (19 ns baseline to 56 ns K-optimized) and this EV+0.56 eV trap concentration are inversely proportional, which would be expected for a recombination-limited carrier lifetime. The K optimization of ACIGS results in significantly improved cell efficiency and reduced trap concentrations that correlate with the improved material and electrical properties. We will report on this and the impact of the K optimization on the cell metastability.

14 SOLAR ENERGY↗
DOE OSTI2020

Pressure-Induced Superconductivity in the Wide-Band-Gap Semiconductor Cu 2 Br 2 Se 6 with a Robust Framework

We report pressure-induced superconductivity in a ternary and nonmagnetic Cu-containing semiconductor, Cu 2 Br 2 Se 6 , with a wide band gap of 1.89 eV, in which the Cu and Br atoms generate infinite 2, helical chains along the c-axis and are linked by the cyclohexane-like Se 6 rings to form a three-dimensional framework. We find that this framework is remarkably robust under compression, and the ambient-pressure phase survives at least to our experimental limit of 32.1 GPa. Concurrent semiconductor-to-metal transition and superconductivity are observed above 21.0 GPa. The superconducting temperature monotonically increases from 4.0 to 6.7 K at 40.0 GPa. Furthermore, first-principles calculations show that the emergence of superconductivity is associated with the formation of weak multicentered bonds that involve the increase in coordination of the Cu atoms and a subset of the Se atoms. The observation of superconductivity in this type of nonmagnetic transition-metal-based material will inspire the exploration of related new superconductors under pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Metal-insulator transition and doping-induced phase change in Ge 2 Sb 2 Se 5x Te 5-5x

Ge 2 Sb 2 Te 5 (GST-225), a phase change material (PCM) with vast differences in the electrical and optical characteristics between its amorphous and crystalline phases, is revisited to explore its properties with Se doping. GST crystallizes in a layered hexagonal ground state, while the precursor to the amorphous state is a distorted rock salt like structure with vacancies at the Ge/Sb sites. Upon doping, liquid nitrogen quenched Ge 2 Sb 2 Se 5x Te 5-5x (GSST-225) exhibits a direct hexagonal-to-amorphous phase change above x > 0.8, whereas the rock salt like structure appears as a second phase with a volume fraction that does not change as a function of the doping. The phase change is accompanied by a metal-to-insulator transition (MIT), with a several orders of magnitude increase in the resistivity on approaching the amorphous state. Additionally, a similar MIT is observed even without the phase change in hexagonal crystals with doping levels above x >0.8. On warming amorphous GSST (x = 0.9) above room temperature, a reversal to the hexagonal phase occurs with a re-crystallization onset temperature (T c ) above 300 °C, much higher than the T c (~170 °C) of amorphous GST and an activation energy of 1.47 eV, which is comparable to good glass formers.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ultrafast bipolar conductivity driven by intense single-cycle terahertz pulses in a topological insulator Bi 2 Se 3

We present the measurement of ultrafast terahertz (THz) conductivity of a 50 nm thick topological insulator Bi 2 Se 3 at low temperature 5 K by using a THz pump and THz probe spectroscopy scheme. Here, the THz conductivity driven by a single-cycle intense THz pump exhibits a bipolar lineshape and frequency-dependent relaxation dynamics due to the separated surface and bulk charge carriers with distinctly different scattering rates and relaxation times. We also demonstrate THz pump field-dependent excitation of the surface and bulk spectral weights, which suggests one of the optimal THz excitation conditions for generating the most charge carriers from the topology-protected surface state relative to the bulk. This also allows THz control of surface and bulk transport channels in a selective way.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Morphological–Electrical Property Relation in Cu(In,Ga)(S,Se) 2 Solar Cells: Significance of Crystal Grain Growth and Band Grading by Potassium Treatment

Abstract Solution‐processed Cu(In,Ga)(S,Se) 2 (CIGS) has a great potential for the production of large‐area photovoltaic devices at low cost. However, CIGS solar cells processed from solution exhibit relatively lower performance compared to vacuum‐processed devices because of a lack of proper composition distribution, which is mainly instigated by the limited Se uptake during chalcogenization. In this work, a unique potassium treatment method is utilized to improve the selenium uptake judiciously, enhancing grain sizes and forming a wider bandgap minimum region. Careful engineering of the bandgap grading structure also results in an enlarged space charge region, which is favorable for electron–hole separation and efficient charge carrier collection. Besides, this device processing approach has led to a linearly increasing electron diffusion length and carrier lifetime with increasing the grain size of the CIGS film, which is a critical achievement for enhancing photocurrent yield. Overall, 15% of power conversion efficiency is achieved in solar cells processed from environmentally benign solutions. This approach offers critical insights for precise device design and processing rules for solution‐processed CIGS solar cells.

Kim, Joo‐Hyun↗
DOE OSTI2020

Photon energy and polarization-dependent electronic structure of Cr-doped Bi 2 Se 3

In this article, we report a comparative study of the electronic structure of Cr-doped and pristine Bi 2 Se 3 . Circular dichroism and photon-energy-dependent angle-resolved photoemission experiments were performed. Even though the surface states seen on the Cr-doped samples are gapped, they exhibit strong circular dichroism, for which we provide its origin in accordance with the nontrivial band structure of the bulk. We note the surface electronic structure measurements with linear and circular polarized light show signatures that the orbital composition of the surface states is changed with Cr doping. Our observations not only provide further spectroscopic information about topological materials, but also promotes an alternative experimental tool to control their spin-orbital texture.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Evaluating Recombination Mechanisms in RbF Treated Cu(In${}_\mathrm{x}$Ga$_\mathrm{1-x}$)Se$_{2}$ Solar Cells

Rubidium fluoride (RbF) postdeposition treatment (PDT) has been shown to improve the performance of Cu(In x Ga 1-x )Se 2 (CIGS) photovoltaic devices. Here, in this study, temperature-dependent current voltage (JVT) and time-resolved photoluminescence (TRPL) experiments were combined with modeling using the solar cell capacitance simulator (SCAPS) computer code to investigate the effect of the RbF PDT. Two devices, one as-deposited and one with RbF PDT, were deposited by a three stage coevaporation process. JVT measurements suggest the dominant recombination mechanism may be tunneling-enhanced recombination via bandtail states, but that defect states in the bandgap can also be important. RbF PDT is shown to decrease the characteristic energy of the bandtails. TRPL data show an increase in the minority carrier lifetime after RbF PDT, leading to an improved open-circuit voltage. SCAPS modeling indicates that the dominant recombination mechanism is dependent on the specific defect makeup of a device, suggesting that small changes in processing conditions can impact device behavior. This explains the observation that, for some devices, defect states in the gap dominate while others, as is the case here, appear to be dominated by bandtails.

14 SOLAR ENERGY↗
DOE OSTI2022

Second-harmonic and linear spectroscopy of $\textit{α}$-In 2 Se 3

We report spectroscopic measurements of optical transmission, ellipsometry, and second-harmonic generation (SHG) from as-grown vapor-deposited $\textit{α}$-In 2 Se 3 nanoflakes ranging in thickness from a single quintuple layer (QL) to bulk material. In this work, we compare these measurements with ab initio calculations of structural and optical properties. Linear optical measurements yield thickness-dependent band gaps and dielectric functions, while SHG diagnoses microscopic film structure and ferroelectric polarization. The rotational anisotropy of SHG for s-polarized incident photons of energy 1.4 eV reveals crystalline symmetry and orientation of individual QLs. Peak SHG intensity increases from one to three QLs, then decreases for larger numbers, tracking thickness-dependent trends in the second-order susceptibility components $χ^{xxx}$ and $χ^{zxx}$. Comparison of measured and calculated SHG spectra for s-polarized photons of energies between 1.2 and 1.7 eV incident upon two QL samples discriminates among candidate stacking arrangements, and favors an arrangement with electric polarization vectors of the two QLs pointing outward in opposite directions.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-Rate and Low-Temperature Fabrication of Cu(In,Ga)Se 2 Solar Cells Using AgBr Induced Recrystallization

We present results demonstrating a three-stage, high-rate, low-temperature deposition process for Cu(In,Ga)Se 2 solar cells including a recrystallization step after the second stage, catalyzed by AgBr. The entire deposition and recrystallization process takes place below 450 °C in less than 15 min. Device results with efficiencies exceeding 16% are shown. Here, we achieve very high levels of grain growth and a greater than a 5% absolute increase in device performance because of the recrystallization step relative to an identical process not involving AgBr.

14 SOLAR ENERGY↗