Search NASA⌕ Search

SEARCH · Search NASA

Results for “Sharp interface”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Phase-field approach to cellular blebbing

Bulges in the plasma membrane of cells known as blebs can form spontaneously in a wide range of biological processes, but what controls their shape and stability remains incompletely understood. Here, to address this we introduce a dual phase-field model with coupled order parameters representing the cell cortex and plasma membrane that can quantitatively model blebbing in three dimensions. Simulations and sharp-interface analyses reveal that, depending on whether blebbing occurs by detachment of the plasma membrane or rupture of the actin cortex, blebs can form discontinuously through a saddle-node bifurcation or continuously with increasing cortical tension. The model predictions are in good quantitative agreement with existing experimental data for laser-induced cortex rupture.

Biological and medical sciences↗
DOE OSTI2020

Topological Gaseous Plasmon Polariton in Realistic Plasma

Nontrivial topology in bulk matter has been linked with the existence of topologically protected interfacial states. In this work, we show that a gaseous plasmon polariton (GPP), an electromagnetic surface wave existing at the boundary of magnetized plasma and vacuum, has a topological origin that arises from the nontrivial topology of magnetized plasma. Because a gaseous plasma cannot sustain a sharp interface with discontinuous density, one must consider a gradual density falloff with scale length comparable to or longer than the wavelength of the wave. We show that the GPP may be found within a gapped spectrum in present-day laboratory devices, suggesting that platforms are currently available for experimental investigation of topological wave physics in plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Fragmentation of faceted crystalline wires

The reduction of surface energy is a well-known driving force for the fragmentation of nanowires. Fragmentation can limit the service life of those small low-dimensional building blocks or can be controlled to induce beneficial shape changes. For isotropic surface energy, fragmentation is analogous to the classic Rayleigh-Plateau instability of liquid jets. However, commonly synthesized crystalline nanowires have strongly anisotropic surface energies and exhibit facets coinciding with cusps in the Wulff plot. Depending on growth orientation, different fragmentation behaviors have been seen in nanowires. Using phase-field simulations, we show that fragmentation of faceted nanowires with cubic crystal symmetry may occur by a finite-amplitude nonlinear instability, as opposed to a Rayleigh-Plateau-like linear instability, depending on nanowire growth orientation. Here, we carry out a weakly nonlinear analysis based on sharp interface theory to characterize the faceted nanowire shape corresponding to a surface-energy saddle point. The analysis predicts that the minimum amplitude of a periodic shape perturbation to trigger fragmentation increases with cusp strength but decreases inversely proportionally to the perturbation wavelength for long wavelengths, in good quantitative agreement with phase-field predictions. The results provide the theoretical foundation to predict nanowire stability as a function of length and surface energy in diverse applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy

We report the epitaxial growth of high quality GeSn alloys with Sn compositions up to 21.25 ± 1% by effusion-cell molecular beam epitaxy (MBE). Achieving such a high Sn content with effusion cells is particularly significant, since these sources typically impose stronger radiative heating on the substrate, which is a factor long considered a major obstacle to high-Sn GeSn epitaxy. Contrary to the prevailing assumption that high growth rates are good for suppressing Sn segregation, we demonstrate that carefully controlled low fluxes, combined with stable ultra-low substrate temperatures, enable significant Sn incorporation even under effusion-cell conditions. Structural analyses by high-resolution x-ray diffraction, reciprocal space mapping, atomic force microscopy, and transmission electron microscopy confirm sharp interfaces, high crystallinity, and smooth surfaces at high Sn contents. Furthermore, these findings establish the feasibility of MBE-grown high-Sn GeSn even under diffusion cells, thereby broadening opportunities for Si-compatible photonic and quantum devices.

Alloys↗
DOE OSTI2023

Virtual Flow Solver - Geophysics: A 3D Incompressible Navier-Stokes Solver

Virtual Flow Solver - Geophysics (VFS-Geophysics) is a three-dimensional (3D) incompressible Navier-Stokes solver based on the Curvilinear Immersed Boundary (CURVIB) method. The CURVIB is a sharp interface type of immersed boundary (IB) method that enables the simulation of fluid flows in the presence of geometrically complex moving bodies. The CURVIB method can be applied to wind/MHK turbine simulations and energy applications. VFS-Geophysics is the result of many years of research work by several graduate students, post-docs, and research associates that have been involved in the Computational Hydrodynamics and Biofluids Laboratory directed by Professor Fotis Sotiropoulos. The preparation of the present manual has been supported by the U.S. Department of Energy (DE-EE 0005482).

16 TIDAL AND WAVE POWER↗
DOE OSTI2024

Phase Field Modeling of Near-Wellbore Hydraulic Fracture Nucleation and Propagation

The goal of Task 2 of the project titled "Closing the loop between in situ stress complexity and EGS fracture complexity" is to model fracture nucleation and propagation in the near wellbore region and, in combination with the experimental study conducted as part of Task 4, investigate the relationship between the in situ stress and the near-wellbore fracture patterns. To this end, We have identified phase field as a promising modeling approach to model the nucleation and propagation process in the near wellbore region. In phase field, fractures are represented by a diffuse variable, i.e the damage. Compared to approaches that model fractures as sharp interfaces, phase field does not require any re-meshing or element insertion algorithm, which makes the treatment of complex fracture geometries straightforward, even with simple meshes.

15 GEOTHERMAL ENERGY↗
DOE OSTI2026

Ginzburg--Landau functionals in the large-graph limit

Ginzburg–Landau (GL) functionals on graphs, which are relaxations of graph-cut functionals on graphs, have yielded a variety of insights in image segmentation and graph clustering. In this paper, we study large-graph limits of GL functionals by taking a functional-analytic view of graphs as nonlocal kernels. For a graph Wn with n nodes, the corresponding graph GL functional GL W n ϵ is an energy for functions on Wn. We minimize GL functionals on sequences of growing graphs that converge to functions called graphons. For such sequences of graphs, we show that the graph GL functional Γ-converges to a continuous and nonlocal functional that we call the graphon GL functional. We investigate the sharp-interface limits of the graph GL and graphon GL functionals, and we relate these limits to a nonlocal total-variation (TV) functional. We express the limiting GL functional in terms of Young measures and thereby obtain a probabilistic interpretation of the minimization problem in the large-graph limit. Finally, to develop intuition about graphon GL functionals, we determine the GL minimizer for several example families of graphons.

Zhang, Edith↗
NASA NTRS1972

Boiler for generating high quality vapor

Boiler supplies vapor for use in turbines by imparting a high angular velocity to the liquid annulus in heated rotating drum. Drum boiler provides a sharp interface between boiling liquid and vapor, thereby, inhibiting the formation of unwanted liquid droplets.

Gray, V. H.↗
NASA NTRS1977

Ion-beam-induced atomic mixing

Calculations based on the diffusion model are presented of atomic mixing by ion bombardment. This mixing is assumed to have its basis, as does sputtering, in the collision cascades generated by the primary beam. Sharp interfaces within a target are seen to be smoothed by ion bombardment. Mixing may place fundamental limits on the resolution of ion microprobes.

Haff, P. K.↗
NASA NTRS1983

Tribological and microstructural characteristics of ion-nitrided steels

Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 304 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided.

Spalvins, T.↗
NASA NTRS1982

Enhanced erythrocyte suspension layer stability achieved by surface tension lowering additives

In connection with a fractionation procedure involving the separation of particles, a dilute suspension of these particles in a liquid is carefully layered on a dense liquid. Under ideal conditions, the suspension forms a zone of finite thickness with a 'sharp' interface between the suspension layer and the supporting liquid. Under an applied field, e.g., gravitational or electrical, the particles in the suspension layer migrate to form different layers according to their size and/or density or according to their electrophoretic mobilities. However, in many cases the ideal conditions necessary for the fractionation process are not obtained. Many studies have been conducted to explore the reasons for suspension layer 'instability'. The present investigation represents an extension of a study conducted by Omenyi et al. (1981). An electrostatic repulsion-van der Waals mechanism was used to study the stability of fixed erythrocyte suspensions layered on a D2O cushion.

Omenyi, S. N.↗
NASA NTRS1983

Tribological and microstructural characteristics of ion-nitrided steels

Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 3034 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided. Previously announced in STAR as N83-24635

Spalvins, T.↗
NASA NTRS1985

Investigation of superlattice device structures

This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers.

Gergis, I. S.↗
NASA NTRS1987

Liquid phase epitaxy growth of GaAs/GaAlAs multi-quantum well structures

Experiments in liquid phase epitaxial fabrication of thin GaAs/GaAlAs layers over a planar substrates have been carried out. Layer thicknesses smaller than 300 A were routinely obtained, with the best result being 120 A. Interface sharpness between the layers is approximately 10 A, which is comparable to OMCVD results, but the layers' thicknesses are usually not uniform. Of the experimental parameters, the growth time and the cooling rate seem to have the largest effect on the obtained layer thickness, while the growth temperature and the substrate crystallographic orientation produce less noticeable effects. Quantum effects in the grown layers were observed by photoluminescence measurements.

Cser, J.↗
NASA NTRS1988

The critical complex in nucleation is not the nucleus

A theory of nucleation is presented which combines features of classical nucleation. In this theory, the nucleus is a cluster of finite size with a sharp interface and spinodal decomposition, in which a fluctuation in density or composition generates the critical complex and nucleus. Thus, the nucleus is a product of nucleation. Schematic models for the classical and the proposed routes to nucleation are compared, focusing on the relation between pressure and volume in the models. In the proposed model, the critical complex, or critical state, is between the parent state and the nucleus.

Rasmussen, Don H.↗
NASA NTRS1990

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗
NASA NTRS1990

Interfacial dynamics of two liquids under an oscillating gravitational field

The evolution of two miscible liquids meeting at an initially sharp interface inside a cavity under microgravity g-jitter conditions is studied numerically. The response of the interface and kinematics of the flowfield to various g-jitter accelerations and aspect ratio variations is shown. The interface region acts like a vortex source sheet, and it can be unstable to Kelvin-Helmholtz and Rayleigh-Taylor instabilities. The vortices produced along the interface can serve as a stirring mechanism to promote local mixing. Below the critical Stokes-Reynolds number, the destabilization of the interface results in deformation into wavy structures. In some parameter regions, these structures oscillate in time; in others, they are quasi-steady. Above the critical Stokes-Reynolds number, 'chaotic' instability results, and the interface breaks into concentration pockets. The morphology of the initial breakup is similar to observed Rayleigh-Taylor instability. Subsequent mixing of the two fluids after the breakup of the interface is then very rapid.

Duval, Walter M. B.↗
NASA NTRS1991

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors, the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗