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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Critical Science Instrument Alignment of the James Webb Space Telescope (JWST) Integrated Science Instrument Module (ISIM)

This paper describes the critical instrument alignment terms associated with the six-degree of freedom alignment of each the Science Instrument (SI) in the James Webb Space Telescope (JWST), including focus, pupil shear, pupil clocking, and boresight. We present the test methods used during cryogenic-vacuum tests to directly measure the performance of each parameter, the requirements levied on each, and the impact of any violations of these requirements at the instrument and Observatory level.

boresight↗
NASA NTRS1984

High-quality Silicon Films Prepared by Zone-melting Recrystallization

The graphite strip heater zone melting recrystallization (ZMR) technique is described. The material properties of the ZMR films, and SOI device results are reviewed. Although our ZMR work is primarily motivated by integrated circuit applications, this work evolved in part from earlier research on laser crystallization of thick amorphous GaAs and Si films, which was undertaken with the goal of producing low cost photovoltaic materials. The ZMR growth process and its effect on the properties of the recrystallized films may contribute some insight to a general understanding of the rapid recrystallization of Si for solar cells. Adaptation of ZMR for solar cell fabrication is considered.

Chen, C. K.↗
NASA NTRS1991

Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si

Electrical measurements on shallow Si n+-p junction diodes with a 30-nm TiSi2 contacting layer demonstrate that an 80-nm-thick amorphous Ta36Si14N50 film prepared by reactive RF sputtering of a Ta5Si3 target in an Ar/N2 plasma very effectively prevents the interaction between the Si substrate with the TiSi2 contacting layer and a 500-nm Cu overlayer. The Ta36Si14N50 diffusion barrier maintains the integrity of the I-V characteristics up to 900 C for 30-min annealing in vacuum. It is concluded that the amorphous Ta36Si14N50 alloy is not only a material with a very low reactivity for copper, titanium, and silicon, but must have a small diffusivity for copper as well.

Kolawa, E.↗
NASA NTRS2020

Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSI

This invited paper describes prototype SiC JFET integrated circuit (IC) and packaging technology that has produced arguably the most harsh-environment durable electronics ever demonstrated. Prototype medium-scale integration (MSI) ICs fabricated by NASA Glenn Research Center have successfully operated for over 1 year in 500 °C air-ambient, over 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, from -190 °C to +812 °C, and radiation exposure through 7 MRad(Si) total ionizing dose and 86 MeV-cm2/mg heavy ion strikes. Recent on-going work focused on upscaling this “go anywhere” IC capability from MSI to large-scale integration (LSI) prototype via benchmark memory ICs is described.

Integrated Circuits↗
NASA NTRS1986

A study of the use of abstract types for the representation of engineering units in integration and test applications

Physical quantities using various units of measurement can be well represented in Ada by the use of abstract types. Computation involving these quantities (electric potential, mass, volume) can also automatically invoke the computation and checking of some of the implicitly associable attributes of measurements. Quantities can be held internally in SI units, transparently to the user, with automatic conversion. Through dimensional analysis, the type of the derived quantity resulting from a computation is known, thereby allowing dynamic checks of the equations used. The impact of the possible implementation of these techniques in integration and test applications is discussed. The overhead of computing and transporting measurement attributes is weighed against the advantages gained by their use. The construction of a run time interpreter using physical quantities in equations can be aided by the dynamic equation checks provided by dimensional analysis. The effects of high levels of abstraction on the generation and maintenance of software used in integration and test applications are also discussed.

Johnson, Charles S.↗
NASA NTRS1979

Solar C III line intensity ratios observed from Skylab

Solar observations of C III line intensity ratios are analyzed which were obtained by the Naval Research Laboratory extreme-ultraviolet slit spectrograph on Skylab from quiet and active regions, coronal holes, prominences, and a flare. Electron densities are determined by comparing the observed intensity ratios to their theoretical variation as a function of electron density and temperature. Both isothermal line ratios that are evaluated at a characteristic emitting temperature and ratios that are integrated through the temperature and density structure of a model solar atmosphere are calculated. The density-sensitive ratios R(Si IV 1402/C III 1908) and R(Si III 1892/C III 1908) are also used to derive additional values of electron density. It is found that the ratios R(C III 1247/C III 1908), R(Si IV 1402/C III 1908), and R(Si III 1892/C III 1908) give consistent values of electron density for each feature. The C III 1908-A, Si III 1892-A, and Si IV 1402-A lines have recently been observed from the IUE satellite in spectra of late-type stars, and can serve as practical density diagnostics that are independent of assumptions about the stellar surface gravity.

Cook, J. W.↗
NASA NTRS1979

Interfacial reactions in borsic/Ti-3Al-2-1/2V composite

The paper provides a detailed X-ray characterization of a borsic/Ti-3Al-2-1/2V composite, and to correlate the relative intensities of the reaction products with the mechanical properties. Based on X-ray integrated intensity data two stages of interface reactions were identified: during the first stage there is a simultaneous interdiffusion of Si, C, and Ti atoms at the filament/matrix interface resulting in the formation of Ti5Si3, TiSi and small amounts of TiSi2 and TiC. The second stage is associated with considerable TiSi2 and boride formation. It appears that the alpha-phase of Ti is more reactive in forming silicides and borides than the beta-phase. The silicide intensities and the reaction zone thicknesses are shown to be directly related to the reduction of the ultimate tensile strength by thermal degradation, and the results indicate that silicide reaction products are as detrimental to strength as the borides.

Rao, V. B.↗
NASA NTRS1981

RAD hard PROM design study

The results of a preliminary study on the design of a radiation hardened fusible link programmable read-only memory (PROM) are presented. Various fuse technologies and the effects of radiation on MOS integrated circuits are surveyed. A set of design rules allowing the fabrication of a radiation hardened PROM using a Si-gate CMOS process is defined. A preliminary cell layout was completed and the programming concept defined. A block diagram is used to describe the circuit components required for a 4 K design. A design goal data sheet giving target values for the AC, DC, and radiation parameters of the circuit is presented.

Source record↗
NASA NTRS2008

High Temperature Aerogels for Thermal Protection Systems

High temperature aerogels in the Al2O3-SiO2 system are being investigated as possible constituents for lightweight integrated thermal protection system (TPS) designs for use in supersonic and hypersonic applications. Gels are synthesized from ethoxysilanes and AlCl3.6H2O, using an epoxide catalyst. The influence of Al:Si ratio, solvent, water to metal and water to alcohol ratios on aerogel composition, morphology, surface area, and pore size distribution were examined, and phase transformation on heat treatment characterized. Aerogels have been fabricated which maintain porous, fractal structures after brief exposures to 1000 C. Incorporation of nanofibers, infiltration of aerogels into SiC foams, use of polymers for crosslinking the aerogels, or combinations of these, offer potential for toughening and integration of TPS with composite structure. Woven fabric composites having Al2O3-SiO2 aerogels as a matrix also have been fabricated. Continuing work is focused on reduction in shrinkage and optimization of thermal and physical properties.

Hurwitz, Frances I.↗
NASA NTRS2010

Fabrication of Single, Vertically Aligned Carbon Nanotubes in 3D Nanoscale Architectures

Plasma-enhanced chemical vapor deposition (PECVD) and high-throughput manufacturing techniques for integrating single, aligned carbon nanotubes (CNTs) into novel 3D nanoscale architectures have been developed. First, the PECVD growth technique ensures excellent alignment of the tubes, since the tubes align in the direction of the electric field in the plasma as they are growing. Second, the tubes generated with this technique are all metallic, so their chirality is predetermined, which is important for electronic applications. Third, a wafer-scale manufacturing process was developed that is high-throughput and low-cost, and yet enables the integration of just single, aligned tubes with nanoscale 3D architectures with unprecedented placement accuracy and does not rely on e-beam lithography. Such techniques should lend themselves to the integration of PECVD grown tubes for applications ranging from interconnects, nanoelectromechanical systems (NEMS), sensors, bioprobes, or other 3D electronic devices. Chemically amplified polyhydroxystyrene-resin-based deep UV resists were used in conjunction with excimer laser-based (lambda = 248 nm) step-and-repeat lithography to form Ni catalyst dots = 300 nm in diameter that nucleated single, vertically aligned tubes with high yield using dc PECVD growth. This is the first time such chemically amplified resists have been used, resulting in the nucleation of single, vertically aligned tubes. In addition, novel 3D nanoscale architectures have been created using topdown techniques that integrate single, vertically aligned tubes. These were enabled by implementing techniques that use deep-UV chemically amplified resists for small-feature-size resolution; optical lithography units that allow unprecedented control over layer-to-layer registration; and ICP (inductively coupled plasma) etching techniques that result in near-vertical, high-aspect-ratio, 3D nanoscale architectures, in conjunction with the use of materials that are structurally and chemically compatible with the high-temperature synthesis of the PECVD-grown tubes. The techniques offer a wafer-scale process solution for integrating single PECVD-grown nanotubes into novel architectures that should accelerate their integration in 3D electronics in general. NASA can directly benefit from this technology for its extreme-environment planetary missions. Current Si transistors are inherently more susceptible to high radiation, and do not tolerate extremes in temperature. These novel 3D nanoscale architectures can form the basis for NEMS switches that are inherently less susceptible to radiation or to thermal extremes.

Kaul, Anupama B.↗
NASA NTRS2002

High-Power, High-Frequency Si-Based (SiGe) Transistors Developed

Future NASA, DOD, and commercial products will require electronic circuits that have greater functionality and versatility but occupy less space and cost less money to build and integrate than current products. System on a Chip (SOAC), a single semiconductor substrate containing circuits that perform many functions or containing an entire system, is widely recognized as the best technology for achieving low-cost, small-sized systems. Thus, a circuit technology is required that can gather, process, store, and transmit data or communications. Since silicon-integrated circuits are already used for data processing and storage and the infrastructure that supports silicon circuit fabrication is very large, it is sensible to develop communication circuits on silicon so that all the system functions can be integrated onto a single wafer. Until recently, silicon integrated circuits did not function well at the frequencies required for wireless or microwave communications, but with the introduction of small amounts of germanium into the silicon to make silicon-germanium (SiGe) transistors, silicon-based communication circuits are possible. Although microwavefrequency SiGe circuits have been demonstrated, there has been difficulty in obtaining the high power from their transistors that is required for the amplifiers of a transmitter, and many researchers have thought that this could not be done. The NASA Glenn Research Center and collaborators at the University of Michigan have developed SiGe transistors and amplifiers with state-of-the-art output power at microwave frequencies from 8 to 20 GHz. These transistors are fabricated using standard silicon processing and may be integrated with CMOS integrated circuits on a single chip. A scanning electron microscope image of a typical SiGe heterojunction bipolar transistor is shown in the preceding photomicrograph. This transistor achieved a record output power of 550 mW and an associated power-added efficiency of 33 percent at 8.4 GHz, as shown. Record performance was also demonstrated at 12.6 and 18 GHz. Developers have combined these state-of-the-art transistors with transmission lines and micromachined passive circuit components, such as inductors and capacitors, to build multistage amplifiers. Currently, a 1-W, 8.4-GHz power amplifier is being built for NASA deep space communication architectures.

Ponchak, George E.↗
NASA NTRS2019

Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology

Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.

Lauenstein, Jean-Marie↗
NASA NTRSDate not supplied

Developing a New Generation of Integrated Micro-Spec Far Infrared Spectrometers for the EXperiment for Cryogenic Large-Aperture Intensity Mapping (EXCLAIM)

The current state of far-infrared astronomy drives the need to develop compact, sensitive spectrometers for future space and ground-based instruments. Here we present details of the µ-Spec spectrometers currently in development for the far-infrared balloon mission EXCLAIM. The spectrometers are designed to cover the 555 – 714 µm range with a resolution of R = λ/∆λ = 512 at the 638 µm band center. The spectrometer design incorporates a Rowland grating spectrometer implemented in a parallel plate waveguide on a low-loss single-crystal Si chip, employing Nb microstrip planar transmission lines and thin-film Al kinetic inductance detectors (KIDs). The EXCLAIM µ-Spec design is an advancement upon a successful R = 64 µ-Spec prototype, and can be considered a sub-mm superconducting photonic integrated circuit (PIC) that combines spectral dispersion and detection. The design operates in a single M=2 grating order, allowing one spectrometer to cover the full EXCLAIM band without requiring a multi-order focal plane. The EXCLAIM instrument will fly six spectrometers, which are fabricated on a single 150 mm diameter Si wafer. Fabrication involves a flip-wafer-bonding process with patterning of the superconducting layers on both sides of the Si dielectric. The spectrometers are designed to operate at 100 mK, and will include 355 Al KID detectors targeting a goal of NEP ∼8 × 10−19 W/√( Hz). We summarize the design, fabrication, and ongoing development of these µ-Spec spectrometers for EXCLAIM.

Carolyn G. Volpert↗
NASA NTRS1972

Design, processing, and testing of lsi arrays for space station

The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comprise computer simulations that accurately predict performance; aluminum-gate COS/MOS devices including a 256-bit RAM with current sensing; and a silicon-gate process that is being used in the construction of a 256-bit RAM with voltage sensing. The Si-gate process increases speed by reducing the overlap capacitance between gate and source-drain, thus reducing the crossover capacitance and allowing shorter interconnections. The design of a Si-gate RAM, which is pin-for-pin compatible with an RCA bulk silicon COS/MOS memory (type TA 5974), is discussed in full. The Integrated Circuit Tester (ICT) is limited to dc evaluation, but the diagnostics and data collecting are under computer control. The Silicon-on-Sapphire Memory Evaluator (SOS-ME, previously called SOS Memory Exerciser) measures power supply drain and performs a minimum number of tests to establish operation of the memory devices. The Macrodata MD-100 is a microprogrammable tester which has capabilities of extensive testing at speeds up to 5 MHz. Beam-lead technology was successfully integrated with SOS technology to make a simple device with beam leads. This device and the scribing are discussed.

Lile, W. R.↗
NASA NTRS1981

Integrated fluxes for emission lines in the ultraviolet spectra of several planetaries

The IUE satellite observatory was used to obtain absolutely-calibrated emission line fluxes for diagnostic lines of multiply-ionized C, N, O, Si, Ne, and Ar which occur in the ultraviolet spectral region of planetary nebulae. These data, when combined with data from the blue, visual, and near infrared, provide improved estimates of ionic concentrations, plasma temperatures and densities, and elemental abundances.

Carpenter, K. G.↗
NASA NTRS1988

Low cycle fatigue

The papers contained in this volume focus on various aspects of low cycle fatigue, including cyclic deformation, crack propagation, high-temperature low cycle fatigue, microstructural defects, multiaxial and variable amplitude loading, and life prediction. Papers are presented on the low cycle fatigue of some aluminum alloys, prediction of crack growth under creep-fatigue loading conditions, high-temperature low cycle fatigue behavior and lifetime prediction of a nickel-base ODS alloy, and an integrated approach to creep-fatigue life prediction. Other topics discussed include thermal fatigue testing of coated monocrystalline superalloys, low cycle fatigue of Al-Mg-Si alloys, and the effect of superimposed stresses at high frequency on low cycle fatigue.

Solomon, H. D.↗
NASA NTRS2006

An Operational Configuration of the ARPS Data Analysis System to Initialize WRF in the NM'S Environmental Modeling System

The Weather Research and Forecasting (WRF) model is the next generation community mesoscale model designed to enhance collaboration between the research and operational sectors. The NM'S as a whole has begun a transition toward WRF as the mesoscale model of choice to use as a tool in making local forecasts. Currently, both the National Weather Service in Melbourne, FL (NWS MLB) and the Spaceflight Meteorology Group (SMG) are running the Advanced Regional Prediction System (AIRPS) Data Analysis System (ADAS) every 15 minutes over the Florida peninsula to produce high-resolution diagnostics supporting their daily operations. In addition, the NWS MLB and SMG have used ADAS to provide initial conditions for short-range forecasts from the ARPS numerical weather prediction (NWP) model. Both NM'S MLB and SMG have derived great benefit from the maturity of ADAS, and would like to use ADAS for providing initial conditions to WRF. In order to assist in this WRF transition effort, the Applied Meteorology Unit (AMU) was tasked to configure and implement an operational version of WRF that uses output from ADAS for the model initial conditions. Both agencies asked the AMU to develop a framework that allows the ADAS initial conditions to be incorporated into the WRF Environmental Modeling System (EMS) software. Developed by the NM'S Science Operations Officer (S00) Science and Training Resource Center (STRC), the EMS is a complete, full physics, NWP package that incorporates dynamical cores from both the National Center for Atmospheric Research's Advanced Research WRF (ARW) and the National Centers for Environmental Prediction's Non-Hydrostatic Mesoscale Model (NMM) into a single end-to-end forecasting system. The EMS performs nearly all pre- and postprocessing and can be run automatically to obtain external grid data for WRF boundary conditions, run the model, and convert the data into a format that can be readily viewed within the Advanced Weather Interactive Processing System. The EMS has also incorporated the WRF Standard Initialization (SI) graphical user interface (GUT), which allows the user to set up the domain, dynamical core, resolution, etc., with ease. In addition to the SI GUT, the EMS contains a number of configuration files with extensive documentation to help the user select the appropriate input parameters for model physics schemes, integration timesteps, etc. Therefore, because of its streamlined capability, it is quite advantageous to configure ADAS to provide initial condition data to the EMS software. One of the biggest potential benefits of configuring ADAS for ingest into the EMS is that the analyses could be used to initialize either the ARW or NMM. Currently, the ARPS/ADAS software has a conversion routine only for the ARW dynamical core. However, since the NIvIM runs about 2.5 times faster than the ARW, it is quite advantageous to be able to run an ADAS/NMM configuration operationally due to the increased efficiency.

Case, Jonathan↗
NASA NTRS1987

Remote gate capacitance-voltage studies for noninvasive surface characterization

A measurement technique has been developed which allows noncontact capacitance-voltage measurements to be made using a gate electrode located remote from the semiconductor surface under study. With gate electrodes about 0.5 mm in diameter and gate to semiconductor separations of about 1500 A, it was possible to generate data entirely comparable to that obtained with integrated MIS structures but with the advantage that there was access directly to the free-semiconductor surface. This technique was applied to bulk single-crystal Si and InP samples.

Chang, R. R.↗