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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Valley splitting correlations across a silicon quantum well containing germanium

Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the Si/SiGe interfaces, and while Si devices are compatible with large-scale semiconductor manufacturing, achieving a uniformly large valley splitting energy across a many-qubit device spanning mesoscopic distances is an outstanding challenge. In this work we study valley splitting variations in a 1D quantum dot array, formed in a Si 0.972 Ge 0.028 quantum well, manufactured by Intel. We observe correlations in valley splitting, at both sub-100 nm (single gate) and > 1 μm (device) lengthscales, that are consistent with alloy disorder-dominated theory and simulation. Our results develop the mesoscopic understanding of Si/SiGe heterostructures necessary for scalable device design.

Marcks, Jonathan C. [Argonne National Laboratory (↗
DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms​ ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗
DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms​ ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗
NASA NTRS1971

Adavanced RTG and thermoelectric materials study

A comprehensive, generalized two-dimensional RTG analysis computer program was developed. This program is capable of analyzing any specified RTG design under a wide range of transient as well as steady-state operating conditions. The feasibility of a new concept for the design of segmented (or single-phase) thermoelectric couples was demonstrated. A SiGe-PbTe segmented couple involving pressure contacted junctions at the intermediate- and hot-junction temperatures was successfully encapsulated in a hermetically sealed bellows enclosure. This bellows-encapsulated couple was operated between a hot- and cold-junction temperature of 1200 K and 450 K, respectively, with a measured energy conversion efficiency of 7.6 + or - .5 per cent. An experimental study of selected sublimation barrier schemes revealed that a significant reduction in the sublimation rate of p-type PbTe could be achieved by using multiple layers of SiO2 fibers. A comparison of the barrier effectiveness is given for three different barrier designs.

Eggers, P. E.↗
NASA NTRS1972

Silicon-germanium technology program of the Jet Propulsion Laboratory.

The outer planetary exploration missions studied by the Jet Propulsion Laboratory require silicon-germanium radioisotope thermoelectric generators (RTGs) in which the factors of safety are as low as is compatible with the reliable satisfaction of the power needs. Work on silicon germanium sublimation performed at the Jet Propulsion Laboratory is presented. Analytical modeling work on the solid-diffusion process involved in the steady-state (free) sublimation of silicon germanium is described. Analytical predictions are made of the sublimation suppression which can be achieved by using a cover gas. A series of accelerated (high-temperature) tests which were performed on simulated hardware (using four SiGe couples) to study long-term sublimation and reaction mechanisms are also discussed.

De Winter, F.↗
NASA NTRS1975

Performance testing of thermoelectric generators at JPL

Several thermoelectric generators, ranging in output power from 170 watts to microwatts, are undergoing testing at JPL. They represent a wide range of technologies using advanced PbTe, SiGe and cascaded PbTe and BiTe thermoelectric materials. Several of these generators are of an advanced concept while others are representative of the Nimbus, Transit, Viking and the multi-hundred-watt (MHW) technology. Of interest is the behavior of generators which have been tested for times in excess of 60,000 hours.

Rouklove, P.↗
NASA NTRS1982

Electron mobility enhancement in epitaxial multilayer Si-Si/1-x/Ge/x/ alloy films on /100/Si

Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.

Manasevit, H. M.↗
NASA NTRS1982

Computer modeling of thermoelectric generator performance

Features of the DEGRA 2 computer code for simulating the operations of a spacecraft thermoelectric generator are described. The code models the physical processes occurring during operation. Input variables include the thermoelectric couple geometry and composition, the thermoelectric materials' properties, interfaces and insulation in the thermopile, the heat source characteristics, mission trajectory, and generator electrical requirements. Time steps can be specified and sublimation of the leg and hot shoe is accounted for, as are shorts between legs. Calculations are performed for conduction, Peltier, Thomson, and Joule heating, the cold junction can be adjusted for solar radition, and the legs of the thermoelectric couple are segmented to enhance the approximation accuracy. A trial run covering 18 couple modules yielded data with 0.3% accuracy with regard to test data. The model has been successful with selenide materials, SiGe, and SiN4, with output of all critical operational variables.

Chmielewski, A. B.↗
NASA NTRS1983

Refractory materials for high-temperature thermoelectric energy conversion

Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.

Wood, C.↗
NASA NTRS1983

High capacity power systems for space

Candidate high-power supply systems for future space missions are discussed. Solar cells, particularly made from GaAs materials, are projected to be amenable large arrays that will have a 10 yr lifetime with a 15 percent efficiency at the end. Concentrator arrays using GaAs cells could furnish over 200 W/sq m with 100 suns irradiance. Different battery systems, other than the present low-power NiCd storage systems, will be required, and could be either fuel cell systems or NiH2 batteries. The flywheel also offers promise, especially if integrated within the attitude control system. Solar thermal systems are also possible, featuring SiGe thermocouples, or boron alloys or rare earth calcogenides in thermoelectric generators or thermionic converters equipped with alkali metal elements. Mechanical systems, notably the Brayton cycle engine, offer multihundredwatt performance and higher, with at least 3.5 yr lifetimes. Experimentation is still needed to characterize the power supply interaction with the spacecraft environment and to design efficient and long-lasting radiators if heat engines are implemented.

Mullin, J. P.↗
NASA NTRS1984

Refractory materials for high-temperature thermoelectric energy conversion

Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimaiation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.

Wood, C.↗
NASA NTRS1984

SP-100 space nuclear power system

A baseline design concept for a 100 kWe nuclear reactor space power system is described. The concept was developed under contract from JPL as part of a joint program of the DOE, DOD, and NASA. The major technical and safety constraints influencing the selection of reactor operating parameters are discussed. A lithium-cooled compact fast reactor was selected as the best candidate system. The material selected for the thermoelectric conversion system was silicon germanium (SiGe) with gallium phosphide doping. Attention is given to the improved safety of the seven in-core control rod configuration.

Given, R. W.↗
NASA NTRS1985

Solutal Convection and Its Effects on Crystal Growth and Segregation in Binary and Pseudo-Binary System with Large Liquidus-Solidus Separation

This research program is composed of theoretical and experimental studies of solutal convection and its effects on crystal growth and segregation in binary and pseudo-binary systems with large liquidus-solidus separation. The theoretical program has resulted in the development of a transient simulation of the growth of concentrated alloys in microgravity and has been used to study the dynamics of GeSi, PbSnTe, HgCdTe growth. Finite element analysis has also been developed for studying the interactions of buoyancy-driven convection in the melt caused by temperature and concentration variations with melt-solid interface morphology and alloy segregation in the grown crystal. These calculations are being compared directly to experimental measurements of segregation and interface shape for GeSi growth and GaGe growth. The results for SiGe indicate that careful design of the thermal system can result in almost diffusion-controlled growth on Earth because of the stablizing influence of the concentration gradient ahead of the solidification front.

Brown, R. A.↗
NASA NTRS1986

Properties of silicon-germanium thermoelectric alloys with additives

The paper reports the results of measurements (Seebeck and Hall coefficients, electrical resistivity, and thermal conductivity) on silicon-germanium (Si-20 at. pct Ge) alloy with boron phosphide, B(6.5)P) as an additive, prepared as described by McLane et al. (1986). The power factor (Seebeck coefficient squared divided by electrical resistivity) and the thermal conductivity of SeGe/B(6.5)P material were found to be lower than for the 'standard' SiGe (Si-22 at. pct Ge) material. However, no net improvement was achieved in the figure-of-merit of the sample tested. It is suggested that structural inhomogeneities, revealed by a SEM examination, might be responsible for this lack of improvement.

Mclane, George↗
NASA NTRS1988

Diagnostics of silane and germane radio frequency plasmas by coherent anti-Stokes Raman spectroscopy

In situ plasma diagnostics using coherent anti-Stokes Raman spectroscopy have shown different dissociation characteristics for GeH4 and SiH4 in radio frequency (rf) plasma-enhanced chemical vapor deposition of amorphous silicon germanium alloy (a-SiGe:H) thin films. The GeH4 dissociation rate in rf plasmas is a factor of about 3 larger than that of SiH4. Plasma diagnostics have revealed that the hydrogen dilution of the SiH4 and GeH4 mixed plasma plays a critical role in suppressing the gas phase polymerization and enhancing the GeH4 dissociation.

Perry, Joseph W.↗