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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2025

Time Resolution Characterization of 4H-SiC LGADs with a 90 Sr Source

This work presents timing measurements of 4H-SiC Low Gain Avalanche Detectors (4H-SiC LGADs) using beta particles from a 90Sr source. The 4H-SiC LGADs exhibit fast signal responses, and a time resolution of 61 ps was achieved, comparable to that of standard Si LGADs. The present limitation in the time resolution of 4H-SiC LGADs appears to stem from limited charge generation. Nevertheless, their higher voltage tolerance and faster carrier drift suggest that, with increased charge collection, their timing performance could approach or even surpass that of Si LGADs. Furthermore, these results demonstrate the strong potential of 4H-SiC LGADs as a robust platform for precision timing in future 4D tracking detectors, while also highlighting that signal charge is the dominant factor currently limiting their performance, indicating that further optimization of gain and drift structures will be essential for future development.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Computational thermodynamic study of SiC chemical vapor deposition from MTS-H 2

This study focuses on the computational thermodynamic analysis of the chemical vapor deposition (CVD) of SiC from the methyltrichlorosilane-hydrogen (MTS-H 2 ) using up-to-date thermodynamic databases. High-resolution computation has been performed with the fine intervals of temperature and pressure at the various H 2 /MTS ratios of interest to systematically investigate the deposition condition range (800 to 1600°C, 0 to 26 664 Pa, and H 2 /MTS ratios of 0.1 to 100) to guide experimental exploration. The influence of deposition parameters on the compositions and phase stabilities of the deposit and gas phase pertinent to vapor processing is elucidated. Low pressure and medium temperatures (1000 to 1400°C) are beneficial to reaching a higher SiC deposition efficiency and provide an optimal window for preparing a high-purity (>99 wt.% SiC) deposit. This optimal processing window expands significantly with an increasing H 2 /MTS ratio (<20). These results are supported by a number of previous theoretical and experimental observations. The mass fraction of SiC in deposit is proposed as an additional perspective to understand the discrepancy between thermodynamic calculation and experimental observation of pure CVD SiC at low H 2 /MTS ratios.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Bulk-scale stress–strain hysteresis in layered crystalline solids: A study of graphite and Ti 3 SiC 2

Polycrystalline graphite and the MAX phase Ti 3 SiC 2 are layered crystalline solids with similar deformation mechanisms, including basal slip, ripplocation boundaries (RBs), kink boundaries (KBs), and cracking. The interplay of these mechanisms, notably in energy dissipation, has been much discussed in the past twenty-five years. This study builds upon previous work, investigating deformation with a renewed emphasis on the bulk-scale and given recent findings concerning RBs. Our investigation compares the evolution of energy dissipation, nonlinear recoverable and irrecoverable strain, and damage upon increasing stress for graphite and Ti 3 SiC 2 . Benitez et al.’s (2016) methodology of compressive cyclic loading and post-mortem electron backscatter diffraction (EBSD) to assess the prevalence of kinking based on low-angle grain boundaries (LAGBs) was used. Strains were measured with digital image correlation and EBSD was conducted on Ti 3 SiC 2 leveraging dictionary indexing, which was necessary herein to identify LAGBs accurately. The stress–strain stages of Ti 3 SiC 2 agree with literature on Ti 2 AlC. Damage and energy dissipation were more accelerated in graphite. No significant difference was observed in the fraction of LAGBs between pristine and unloaded Ti 3 SiC 2 . Trends observed and EBSD evidence that KBs were not dominant suggest that RBs are the primary dissipator of energy in both materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Helium effects and bubbles formation in irradiated Ti 3 SiC 2

Ti 3 SiC 2 is a potential structural material for nuclear reactor applications. However, He irradiation effects in this material are not well understood, especially at high temperatures. Here, we compare the effects of He irradiation in Ti 3 SiC 2 at room temperature (RT) and at 750 °C. Irradiation at 750 °C was found to lead to extremely elongated He bubbles that are concentrated in the nano-laminate layers of Ti 3 SiC 2 , whereas the overall crystal structure of the material remained intact. In contrast, at RT, the layered structure was significantly damaged and highly disordered after irradiation. Our study reveals that at elevated temperatures, the unique structure of Ti 3 SiC 2 can accommodate large amounts of He atoms in the nano-laminate layer, without compromising the structural stability of the material. The structure and the mechanical tests results show that the irradiation induced swelling and hardening at 750 °C are much smaller than those at RT. Overall, these results indicate that Ti 3 SiC 2 has an excellent resistance to accumulation of radiation-induced He impurities and that it has a considerable tolerance to irradiation-induced degradation of mechanical properties at high temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Micromechanical response of SiC-OPyC layers in TRISO fuel particles

Tristructural isotropic (TRISO)–coated particle fuel is a proposed fuel for multiple advanced reactor concepts. The performance of the particle depends on whether the silicon carbide (SiC) layer remains intact to prevent the release of metallic and gaseous fission products. Mechanical fracture of the SiC layer is a potential failure mode under various fuel configurations and operating environments, including the potential transmission of matrix-originating cracks through TRISO particles. Furthermore, this study uses instrumented indentation techniques on cross-sectioned surrogate particles to examine the mechanical stability of the critical interface between SiC and the outer pyrolytic carbon (OPyC) layer. The observed behavior at the interface is rationalized by examining the radially dependent fracture behavior of the SiC layer and performing a numerical analysis to quantify the residual stresses that develop during the processing and cross-sectioning of the as-fabricated particle. Characterizing the SiC-OPyC interface of surrogate TRISO particles using nanoindentation provides unique insight into the interface's room-temperature residual stress and mechanical stability. The modeling efforts were used to investigate the experimental procedure further, and the results are presented herein to validate this fuel form's potential mechanical failure modes.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2026

Methods development towards automated, physics-informed, quantitative quality control of TRISO-SiC

Tristructural-isotropic (TRISO) fuel particles have been developed as a high-performance fuel for use in high-temperature gas-cooled reactor (HTGR) systems due to their high efficiency and stability under both normal and off-normal conditions. Broader deployment of this technology in advanced nuclear applications may benefit from quantitative quality assurance and quality control (QA/QC) methods that directly link TRISO properties to downstream performance. A key TRISO property is the SiC layer microstructure, which influences fission product retention during irradiation. However, existing QA/QC for the TRISO-SiC microstructure comprises only a qualitative visual inspection; therefore, there is a clear opportunity for the development of quantitative methods for TRISO QA/QC. Here, to this end, previous work has demonstrated an image processing approach to grain boundary (GB) identification and subsequent extraction of microstructural metrics; however, extensive twinning within the SiC layer complicates such analyses because twin GBs significantly influence microstructural metrics but are not expected to contribute to fission product transport. This study presents the initial development, training, and testing of an ML-based image segmentation algorithm designed to identify and remove twin GBs from standard backscattered electron micrographs, providing an industrially applicable, quantitative, and physically meaningful QA/QC approach for the TRISO-SiC microstructure. Although pixel-wise performance metrics for the twin predictions are low, the change in grain area and the number of GB pixels after twin removal predicted by the ML workflow are within 1% of the true values calculated using crystallographic data. This suggests that the model is well capable of predicting overall twin boundary structures and grain morphology, and continued advancement of this approach could enable automated, scalable, and physics-informed QA/QC for TRISO-SiC microstructures, supporting the reliable qualification of coated particle fuels for next-generation reactor systems.

Computer vision↗
DOE OSTI2020

Understanding the interface interaction between U3Si2 fuel and SiC cladding

Abstract Triuranium disilicide (U 3 Si 2 ) fuel with silicon carbide (SiC) composite cladding is being considered as an advanced concept/accident tolerant fuel for light water reactors thus, understanding their chemical compatibility under operational and accident conditions is paramount. Here we provide a comprehensive view of the interaction between U 3 Si 2 and SiC by utilizing density functional theory calculations supported by diffusion couple experiments. From the calculated reaction energies, we demonstrate that triuranium pentasilicide (U 3 Si 5 ), uranium carbide (UC), U 20 Si 16 C 3 , and uranium silicide (USi) phases can form at the interface. A detailed study of U 3 Si 2 and SiC defect formation energies of the equilibrated materials yielding the interfacial phases U 20 Si 16 C 3 , U 3 Si 5 and UC reveal a thermodynamic driving force for generating defects in both fuel and cladding. The absence of either the U 3 Si 2 or SiC phase, however, causes the defect formation energies in the other phase to be positive, removing the driving force for additional interfacial reactions. The diffusion couple experiments confirm the conclusion with demonstrated restricted formation of U 3 Si 5 , UC, and U 20 Si 16 C 3 /USi phases at the interface. The resulting lack of continuous interaction between the U 3 Si 2 and SiC, reflects the diminishing driving force for defect formation, demonstrating the substantial stability of this fuel-cladding system.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Phonon-assisted optical absorption of SiC polytypes from first principles

Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have existed for more than 50 years, theoretical investigations of phonon-assisted absorption have been hampered by their excessive computational cost. Here, in this work, we calculate the phonon-assisted temperature-dependent optical absorption spectra of the commonly occurring SiC polytypes (3C, 2H, 4H, 6H, and 15R), using first-principles approaches based on density functional theory and related techniques. We show that our results agree with experimentally determined absorption coefficients in the spectral region between the direct and indirect band gaps. The temperature dependence of the spectra can be well predicted with taking the temperature dependence of the band gaps into account. Lastly, we compare the spectra obtained with second-order perturbation theory to those determined by the special displacement method and we show that the full consideration of the electronic energy renormalization due to temperature is important to further improve the prediction of the phonon-assisted absorption in SiC. Our insights can be applied to predict the optical spectra of the less common SiC polytypes and other indirect-gap semiconductors in general.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Performance and Techno-Economic Evaluation of a Three-Phase, 50-kW SiC-Based PV Inverter

The technical capabilities and benefits of silicon carbide (SiC) compared to silicon (Si) based power electronics converters as well as the premium associated with using SiC instead of Si are well understood. This work proves that the benefits provided by SiC, such as increased efficiency, would result in a lower levelized cost of energy (LCOE) compared to both commercially available, state-of-the-art inverters and the benchmark commercial system cost calculated for the U.S. Department of Energy Solar Energy Technologies Office's SunShot program. The LCOE is calculated to be same as the commercial benchmark despite the installed system cost being 8% more than the benchmark. The LCOE calculation is based on both experiential values obtained from testing the SiC photovoltaic (PV) inverter and on the bottoms-up modeled volume cost for the same 50-kW SiC-based inverter. The PV system used for the LCOE model is also explained, and the system cost breakout is presented in this paper. Furthermore, multiple scenarios with variations in the PV system are presented to show their effect on the system LCOE.

14 SOLAR ENERGY↗
DOE OSTI2026

Screening and qualification methodology for SiC end plug processing methods

Deployment of SiC-ceramic-based fuel cladding for light water reactors requires a hermetic end plug–to–cladding joint that can withstand neutron irradiation during normal operation and maintain integrity during design-basis accidents. Reactor experiments have shown that some SiC composite tubes with SiC end plugs can retain hermeticity after irradiation. However, achieving consistent joint performance under irradiation remains a key challenge. Resolving this issue is essential to enable integral irradiation testing and to demonstrate fuel integrity under commercial-reactor irradiation conditions. This report aims to: (1) provide guidance for designing radiation-tolerant end plug joints for SiC cladding; (2) demonstrate experimental methods to detect processing defects that are unstable under neutron irradiation at light-water-reactor-relevant temperatures and doses; and (3) outline a step-by-step approach for designing and conducting reactor experiments to screen joining methods. The resulting data will be used to improve joint processing and to define critical defect types and sizes that must be detected and eliminated through non-destructive evaluation for quality assurance. Based on prior irradiation experiments at the High Flux Isotope Reactor, differential swelling among the cladding, bonding layer, and end plug was identified as an underlying mechanism for irradiation-induced joint degradation. Accordingly, this effect must be considered in the design of radiation-tolerant joining techniques. In this work, miniature SiC end plug joint specimens irradiated during the previous project were analyzed using X-ray computed tomography to characterize the joint microstructure. Digital volume correlation of the tomography data quantified radiation-induced microstructural changes and enabled evaluation of defect-related risks. Finally, ongoing neutron irradiation efforts using larger specimen volumes are presented. These efforts aim to statistically assess joint performance and to build a microstructure–performance (e.g., leak-tightness) dataset to inform processing improvements and quality control.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2026

High-Temperature SiC Cladding End Plug Irradiation Design and HFIR Readiness

This report documents the design of a High Flux Isotope Reactor (HFIR) irradiation experiment intended to evaluate irradiation effects on the hermeticity of silicon carbide (SiC) end plug specimens under a radial fast neutron flux gradient at representative light-water reactor (LWR) temperatures of approximately 300 °C. The overarching goal of this work is to statistically evaluate SiC end plug hermeticity and mechanical properties following irradiation using the high-throughput irradiation capability discussed here. Each specimen consists of a short section of SiC fiber–reinforced SiC (SiC/SiC) tube with a single monolithic SiC end plug joined to one end. The experiment allows up to 66 specimens to be irradiated in six different stacks within a dry, sealed irradiation capsule derived from the previously developed high-temperature SiC/SiC cladding bowing experiment. The neutronics basis, thermal analysis, and HFIR readiness of the experiment are discussed in this report for two possible design cases. The first design case is based on existing approval documentation and components that are on hand and approved for use, so the experiment insertion would require only specimen receipt, specimen pre-irradiation characterization, experiment assembly, and final fabrication package approval. The second design case provides improved thermal robustness and the preferred end plug geometry but requires fabrication of a modified holder and revisions to the HFIR approval documentation, in addition to the other activities required for the first design case, before insertion.

Hott, Daniel [Oak Ridge National Laboratory (ORNL)↗
DOE OSTI2020

Origin of Large Meteoritic SiC Stardust Grains in Metal-rich AGB Stars

Stardust grains that originated in ancient stars and supernovae are recovered from meteorites and carry the detailed composition of their astronomical sites of origin. We present evidence that the majority of large (μm-sized) meteoritic silicon carbide (SiC) grains formed in C-rich asymptotic giant branch (AGB) stars that were more metal-rich than the Sun. In the framework of the slow neutron captures (the s process) that occur in AGB stars, the lower-than-solar $^{88}$Sr/$^{86}$Sr isotopic ratios measured in the large SiC grains can only be accompanied by Ce/Y elemental ratios that are also lower than solar and predominately observed in metal-rich barium stars—the binary companions of AGB stars. Such an origin suggests that these large grains represent the material from high-metallicity AGB stars needed to explain the s-process nucleosynthesis variations observed in bulk meteorites. In the outflows of metal-rich, C-rich AGB stars, SiC grains are predicted to be small (≃0.2 μm); large (≃μm-sized) SiC grains can grow if the number of dust seeds is 2–3 orders of magnitude lower than the standard value of 10 -13 times the number of H atoms. We therefore predict that with increasing metallicity, the number of dust seeds might decrease, resulting in the production of larger SiC grains.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2025

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $^{210}_{84}$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon

Oxidation behaviors of bulk SiC at 1000–1400 °C in Ar-20 vol% H 2 O-10 vol% air were investigated. The thickness of the passivation oxide layer showed a parabolic increase with time. Dense and uniform layers formed below 1200 °C, whereas pores and cracks were observed at higher temperatures. An analytical model was proposed to estimate the oxide layer growth and SiC mass loss rate. The SiC layer should be effective in retaining the fission products after oxidation by excessive water and air. This work is the first detailed study of SiC layer oxidation during loss of coolant accidents (LOCA) for HTGRs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Compatibility of SiC with ODS FeCrAl in flowing Pb-Li at 600° - 700°C

To establish the maximum operating temperature for the dual coolant lead lithium (DCLL) blanket concept, thermal convection loop (TCL) experiments were conducted for 1000 h with a peak temperature of 700 °C to determine compatibility with commercial eutectic Pb~17at.%Li. Two TCLs were fabricated from alloy APMT (FeCrAlMo) and the baseline TCL experiment contained only APMT specimens. The second TCL experiment exposed more fusion relevant CVD SiC and ODS Fe-10Cr-6Al specimens in the hot and cold legs. In the second experiment, the mass losses were much larger for the ODS FeCrAl specimens and most of the CVD SiC specimens experienced a mass gain as SiC reacted to form an Fe- and Cr-rich carbide reaction product. Dissolved Fe and Cr reacted with the SiC and removing Fe and Cr from the liquid appeared to increase ODS FeCrAl dissolution. Such a dissimilar material interaction appears consistent with thermodynamic calculations. Significant attack at the top of the hot leg in both experiments suggests that the Pb-Li compatibility of FeCrAl alloys is inadequate at 700 °C in a flowing environment and the maximum PbLi temperature is < 675 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Investigation of the structure and chemical nature of Pd fission product agglomerations in irradiated TRISO particle SiC

Tristructural-isotropic (TRISO)-coated fuel particles are used in high-temperature gas-cooled nuclear reactors. Although the polycrystalline 3C-SiC layer acts as the main barrier to fission product release, post-irradiation examinations have shown that certain metallic fission products are found outside of the TRISO coated particle, with no observable micro-cracks or other mechanical failure feature. In this study, an atomic resolution transmission electron microscopy investigation of a SiC layer of a neutron irradiated (19.38% fissions per initial metal atom average burnup; 1072°C time-averaged temperature) TRISO-coated particle from the first advanced gas reactor experiment at Idaho National Laboratory containing mainly Pd and U was conducted. The fission product Pd was found to be present at dislocation cores associated with twins, stacking faults, and their intersections. The Pd present at the dislocation cores were bonded to Si, suggesting that the diffusion of Pd along the SiC dislocation cores involves the formation of Pd-Si bonds. Evidence of single atom grain boundary migration was also found. Fission product agglomerations at grain boundaries most likely consist of a random solid solution containing Si-FP, Si-C, and C-C type bonding arrangements. No difference in the Si- or C-bonding environment is found for the unoccupied grain boundary adjacent to a fission product agglomeration compared to the bulk SiC.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Effects of sample bias on adhesion of magnetron sputtered Cr coatings on SiC

Swelling of SiC at 300 C due to in-service neutron irradiation causes tensile residual stresses in coatings which are expected to adversely affect the performance of coated SiC composite fuel cladding for light water reactors. Matching the coating swelling with the substrate, a solution common for thermal expansion, is not practical in the case of neutron irradiation. Biasing samples during magnetron sputtering deposition induces compressive residual stress which may counteract this. In this study, chromium coatings were deposited on SiC by DC magnetron sputtering with no external heating at bias voltages of –50V, –75V, and –100V. The effects of the bias voltage on morphology, residual stress, microstrain, texture, and adhesion are shown. The low deposition temperature resulted in the coating microstructure evolution following an energetic particle bombardment dominated trend. Additionally, at the two lower bias voltages knock-on implantation dominated increasing the residual stress and microstrain while at the highest bias voltage, thermal spike migration allowed for defect relaxation. When the knock-on induced compressive residual stress exceeded 0.8 GPa microcrack formation in the SiC substrate decreased coating adhesion. While no microcracks formed at the lowest bias voltage, insufficient atomic mobility during coating growth lead to voids forming in the coating. A balance is needed to form void-free coatings that have high compressive residual stress.

36 MATERIALS SCIENCE↗