SEARCH · Search NASA

Results for “Silicon Carbide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6

All sources NASA NTRS DOE OSTI

DOE OSTI2021

Silicon carbide power inverter/rectifier for electric machines

The present disclosure involves a two stage inverter, a system for electrical power conversation, and a method of converting electrical power using silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). One example implementation includes using two or more SiC MOSFETs in series with each MOSFET having a gate terminal for triggering a state switch between an on (conducting) and off (non-conducting) state of the MOSFET. An AC terminal is connected between the series SiC MOSFETS, and the series SiC MOSFETs are connected across a DC bus and in parallel with one or more capacitors.

Shenoy, Suratkal P.↗

DOE OSTI2023

Development of Binder Jet Compatible Silicon Carbide Mixtures for Increased Sintered Density

Binder jet additive manufacturing can process a variety of ceramic powder feedstocks to manufacture near net shape green parts that are subsequently sintered to achieve densification. In particular, silicon carbide (SiC) is a promising ceramic material for heat exchangers in energy storage applications and binder jet is a well-suited process for manufacturing these heat exchangers due to the often geometrically complex designs. However, the need for good powder flowability in binder jet printing often limits the feedstock powder to be larger particles rather than that of ultra fine submicron powders used in conventional ceramic processing, which are more readily densified during sintering. The present work explores the use of various powder mixtures and sintering settings to identify strategies for achieving high density sintered parts in binder jet compatible systems without the use of infiltration. Liquid-phase sintering additives and bimodal powder mixtures are explored alongside different sintering temperatures, rates, atmospheres, and hold times. Two mixtures were found to be good candidates for further exploration: 1) 90 wt% 0.6 µm SiC + 6.25 wt% Al 2 O 3 + 3.75 wt% Y 2 O 3 mixture achieved the highest sintered relative density of 91.2%; and 2) a bimodal mixture comprised of 45 wt% 10 µm SiC + 45 wt% 0.6 µm SiC + 6.25 wt% Al 2 O 3 + 3.75 wt% Y 2 O 3 had the best powder flowability of the powders measured and a 75.1% sintered relative density.

25 ENERGY STORAGE↗

DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗

DOE OSTI2020

Vanadium spin qubits as telecom quantum emitters in silicon carbide

Solid-state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here, we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O band, with brightness allowing cavity-free detection in a wafer-scale material. In vanadium ensembles, we characterize the complex d 1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Last, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid state for quantum applications.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2021

Theoretical study of intrinsic defects in cubic silicon carbide 3C-SiC

Using the local moment counter charge (LMCC) method to accurately represent the asymptotic electrostatic boundary conditions within density functional theory supercell calculations, we present a comprehensive analysis of the atomic structure and energy levels of point defects in cubic silicon carbide (3C-SiC). Finding that the classical long-range dielectric screening outside the supercell induced by a charged defect is a significant contributor to the total energy. we describe and validate a modified Jost screening model to evaluate this polarization energy. This leads to bulk-converged defect levels in finite size supercells. With the LMCC boundary conditions and a standard Perdew-Burke-Ernzerhof (PBE) exchange correlation functional, the computed defect level spectrum exhibits no band gap problem: the range of defect levels spans ~2.4 eV, an effective defect band gap that agrees with the experimental band gap. Comparing with previous literature, our LMCC-PBE defect results are in consistent agreement with the hybrid-exchange functional results of Oda et al. [J. Chem. Phys. 139, 124707 (2013)] rather than their PBE results. The difference with their PBE results is attributed to their use of a conventional jellium approximation rather than the more rigorous LMCC approach for handling charged supercell boundary conditions. The difference between standard dft and hybrid functional results for defect levels lies not in a band gap problem but rather in solving a boundary condition problem. The LMCC-PBE entirely mitigates the effect of the band gap problem on defect levels. The more computationally economical PBE enables a systematic exploration of 3C-SiC defects, where, most notably, we find that the silicon vacancy undergoes Jahn-Teller-induced distortions from the previously assumed T d symmetry, and that the divacancy, like the silicon vacancy, exhibits a site-shift bistability in p -type conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Stability and molecular pathways to the formation of spin defects in silicon carbide

Abstract Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits for quantum technologies. Their synthesis, however, presents considerable challenges, and the mechanisms responsible for their generation or annihilation are poorly understood. Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate—the divacancy complex (VV) in silicon carbide (SiC). Using atomistic models, enhanced sampling simulations, and density functional theory calculations, we find that VV formation is a thermally activated process that competes with the conversion of silicon (V Si ) to carbon monovacancies (V C ), and that VV reorientation can occur without dissociation. We also find that increasing the concentration of V Si relative to V C favors the formation of divacancies. Moreover, we identify pathways to create spin defects consisting of antisite-double vacancy complexes and determine their electronic properties. The detailed view of the mechanisms that underpin the formation and dynamics of spin defects presented here may facilitate the realization of qubits in an industrially relevant material.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2020

Thermal shock resistance of multilayer silicon carbide receiver tubes for 800°C molten salt concentrating solar power application

CSP power tower receiver systems during rapid transient weather periods can be vulnerable to thermal shock conditions from rain that which can facilitate the onset of leaks and failures that can have catastrophic consequences. Silicon carbide (SiC) materials have attractive receiver application characteristics for being light weight, having high-strength and excellent thermal shock resistance performance which make them a particularly good fit for receiver absorber materials in CSP. In this investigation, the performance characteristics of Ceramic Tubular Products (CTP) SiC ceramic matrix composite (CMC), multilayered tubes were explored with respect to thermal shock performance for solar receiver applications in next generation CSP plants. Here, thermal shock testing was performed at the Sandia National Laboratories (SNL) Solar Furnace facility using a dynamic stage and thermal shock tube test setup. The tubes tested under incident solar heat flux of 100 W/cm2 were heated with inner tube temperatures reaching approximately 800 °C, with outer temperatures exceeding or just reaching 1000 El for the multilayer and monolithic SiC tubes respectively. The tubes were then quenched with simulated rain. The tubes were then cooled and subjected to hoop stress analysis using an Instron device to assess their subsequent mechanical strength. Furthermore, the on-sun study experimental results indicate an average of 24.2% and 97% higher hoop strength for the CMC tubes than those composed of monolithic SiC and aluminum oxide (A1203) respectively.

14 SOLAR ENERGY↗

DOE OSTI2024

Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies

Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, in this study, we use one such system, vanadium (V 4+ ) in silicon carbide, to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all-optical measurements of temperature-dependent spin relaxation times (T 1 ). By using this technique, and lowering the temperature from approximately 2 K to approximately 100 mK, we observe a remarkable 4-orders-of-magnitude increase in spin T 1 across all measured sites, with site-specific values ranging from 57.1 ms to 27.9 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain tuning to enable qubit operation at higher temperatures. These results position V 4+ in SiC as a prime candidate for scalable quantum nodes in future quantum networks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

High thermal conductivity in wafer-scale cubic silicon carbide crystals

High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m –1 K –1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.

42 ENGINEERING↗

DOE OSTI2025

Binder jet additive manufacturing of silicon carbide solar reactor

Achieving high powder packing density is critical in binder jet additive manufacturing (BJAM), as it directly influences the final part density, mechanical properties, and sintering behavior. Multi-modal powder blends, which combine particles of different sizes, have been explored as a strategy to optimize packing efficiency and minimize defects. In this study, bimodal and trimodal powder blends were obtained by mixing silicon carbide powder in three different sizes. These results show that increased powder density is achievable with bimodal powder blends but is reduced in trimodal blends, and it was found that a 13% increase in the powder tap density was achieved using a bimodal blend of powder. The powder size distribution of the bimodal blend was measured at various stages during binder jet additive manufacturing and, no measurable powder separation occurred even after eight prints. Overall, this study shows limited advantage to trimodal powder blends but good promise for trimodal blends for increasing printed density while maintaining reusability in the binder jet process.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Binder Jet Additive Manufacturing of Silicon Carbide Solar Reactor (CRADA Report)

99 GENERAL AND MISCELLANEOUS↗

DOE OSTI2022

3D-printed electrically conductive silicon carbide

The development of electrically conductive ceramics could achieve robust mechanical strength as well as practically high conductivity, offering applications in structural electrodes, conductors, catalyst supports, etc. However, its operating temperature is limited due to the intrinsic dense structures inevitably hindering the thermal management capability, thus resulting in a temperature-dependent electrical behavior in high-temperature environments. In this work, we report an additive manufacturing protocol through vat photopolymerization 3D printing to fabricate the architectured conductive silicon carbide (SiC) ceramics that simultaneously possess high electrical conductivity as well as low thermal conductivity, and demonstrate electric reliability under high-temperature environments above 600°C. The percolation of graphene into the ceramic scaffold establishes a uniform conductive network, exhibiting its electrical conductivity up to 1000 S m –1 . The bulk density of the 3D-printed ceramic is measured from 0.366 g cm –3 to 0.897 g cm –3 , with thermal conductivity ranging from 62 mW m –1 K –1 to 88 mW m –1 K –1 . Furthermore, the mechanical performance of conductive ceramic can be effectively reinforced by densifying the microstructures via spark plasma sintering treatment. The proposed additive manufacturing strategy widens the potential of ceramics as a structural and functional material, offering a promising pathway toward high-temperature electronics applications.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Laser writing of nitrogen-doped silicon carbide for biological modulation

Conducting or semiconducting materials embedded in insulating polymeric substrates can be useful in biointerface applications; however, attainment of this composite configuration by direct chemical processes is challenging. Laser-assisted synthesis has evolved as a fast and inexpensive technique to prepare various materials, but its utility in the construction of biophysical tools or biomedical devices is less explored. Here, we use laser writing to convert portions of polydimethylsiloxane (PDMS) into nitrogen-doped cubic silicon carbide (3C-SiC). The dense 3C-SiC surface layer is connected to the PDMS matrix via a spongy graphite layer, facilitating electrochemical and photoelectrochemical activity. We demonstrate the fabrication of arbitrary two-dimensional (2D) SiC-based patterns in PDMS and freestanding 3D constructs. To establish the functionality of the laser-produced composite, we apply it as flexible electrodes for pacing isolated hearts and as photoelectrodes for local peroxide delivery to smooth muscle sheets.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2025

Automated Segmentation of Twin Boundaries in TRISO Silicon Carbide Using Deep Neural Networks

Coated particle fuels, such as the tristructural isotropic (TRISO) fuel particle, are essential for high-temperature gas reactor (HTGR) applications due to their efficiency and stability under normal and off-normal conditions. However, widespread commercialization and deployment of this technology for next-generation nuclear applications require robust quality assurance and quality control (QA/QC) methods linking fabrication, properties, and performance. Of the many important metrics for TRISO QA/QC, quantification of the silicon carbide (SiC) microstructure is critical because it correlates with fission product retention during irradiation. Previous work has shown extensive twinning of the SiC microstructure, which strongly affects microstructural metrics; however, twin grain boundaries are not expected play a significant role in fission product diffusion. This report summarizes the initial development, training, and testing of a machine learning image processing algorithm to detect twin grain boundaries in a backscattered electron image, which can be removed so that microstructural metrics can be recalculated for legacy data. Further development and deployment of this model will provide automated, scalable improvement of potential QA/QC methods for the SiC layer of TRISO particles.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2021

Importance of Van der Waals Interactions in Hydrogen Adsorption on a Silicon-carbide Nanotube Revisited with vdW-DFT and Quantum Monte Carlo

Density functional theory (DFT) is a valuable tool for calculating adsorption energies toward designing materials for hydrogen storage. However, dispersion forces being absent from the local/semi-local theory, it remains unclear as to how the consideration of van der Waals (vdW) interactions affects such calculations. For the first time, we applied diffusion Monte Carlo (DMC) to evaluate the adsorption characteristics of a hydrogen molecule on a (5,5) armchair silicon-carbide nanotube (H 2 -SiCNT). Within the DFT framework, we benchmarked various exchange-correlation functionals, including those recently developed for treating dispersion or vdW interactions. We found that the vdW-corrected DFT methods agree well with DMC, whereas the local (semilocal) functional significantly over (under)-binds. Furthermore, we fully optimized the H 2 -SiCNT geometry within the DFT framework and investigated the correlation between the structure and charge density. The vdW contribution to the adsorption was found to be non-negligible at similar to 1 kcal/mol per hydrogen molecule, which amounts to 9-29% of the ideal adsorption energy required for hydrogen storage applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Silicon Carbide Multilayer Piping for High Temperature sCO 2 Brayton Cycle

Efficiencies of greater than 50% in supercritical carbon dioxide (sCO 2 ) Brayton power cycle systems can be achieved only at turbine inlet temperatures of above 700°C. In support of the push to higher temperatures, a finite element model was developed by Materials Research & Design, Inc. (MR&D) with support from Ceramic Tubular Products, LLC. (CTP) to guide the refinement of CTP’s high temperature ceramic multilayer piping. The multilayer technology combines the advantages of a monolithic silicon carbide (SiC) tube and a SiOC f /SiOC ceramic matrix composite (CMC), the result of which is a material with high-temperature strength and stability, high mechanical and thermal shock resistance, and high corrosion resistance. In addition to fabricating test specimens to refine the finite element model, long-duration, high temperature CO 2 exposure tests were performed by Sandia National Laboratories (SNL) on two varieties of inner monolithic SiC.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2024

High-power test results for a cylindrical-shell silicon carbide higher-order-mode damper

The next high-current Electron-Ion Collider (EIC) is a new accelerator to be built at Brookhaven National Laboratory in collaboration with Thomas Jefferson National Accelerator Facility. In the EIC Electron Storage Ring (ESR), there will be beam currents of up to 2.5 A, which will excite massive higher-order-mode (HOM) power in the 17 single-cell 591 MHz superconducting radio-frequency (SRF) cavities. Damping the HOM power in the ESR SRF cavities is a challenge. A room temperature cylindrical shell shape silicon carbide (SiC) beamline HOM absorber (BLA) was chosen as the baseline design, due to its broadband and high-power capability, and previous demonstrations at other accelerator facilities, albeit at much lower power. Because the EIC BLA HOM power dissipation is significantly greater than the previous applications, it is imperative to carry out high-power testing to determine the maximum device performance levels achievable for thermal transport, rf breakdown, and mechanical stress, prior to finalizing the design. A SiC HOM absorber with a state-of-the-art geometry size was prototyped to verify the shrink-fit technique, test outgassing rate, and high-power handling capability. This paper presents the HOM damper’s prototyping and test results. Published by the American Physical Society 2024

43 PARTICLE ACCELERATORS↗

DOE OSTI2020

A 150-kW 99% Efficient All-Silicon-Carbide Triple-Active-Bridge Converter for Solar-Plus-Storage Systems

Solar-plus-storage systems could effectively mitigate the uncertainties of the photovoltaic (PV) generation and improve system reliability by adding an integrated battery energy storage system. As a three-port bidirectional isolated dc–dc converter with soft-switching capability, the triple-active-bridge (TAB) converter inherently matches the requirements of the solar-plus-storage system. However, challenges still remain in the TAB converter design to further improve system efficiency. In this article, the detailed design, implementation, and demonstration for a silicon carbide (SiC) 150-kW TAB converter are presented. Starting from a brief review of the TAB converter, the modulation scheme, power characteristics, and soft-switching region are analyzed. Then, the detailed design of the H-bridge converter building block is given. Here, to improve the system efficiency, a comprehensive characterization of the SiC gate driver with various external gate resistances is performed to address tradeoffs between switching loss and voltage overshoot during transients, as well as the thermal performance of the H-bridge building block. In addition, the design and characterization of the 20-kHz three-port transformer are also given. Comprehensive experimental studies are conducted on a full-power prototype to verify the proposed design. With a measured 99.1% peak efficiency, the proposed TAB converter can fulfill the requirements for solar-plus-storage applications.

14 SOLAR ENERGY↗