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An application in which CCD optical imaging arrays with 250,000 elements are fabricated from the best commercially available float zone Si is described. Two image defects are described which appear to be related to the starting material. The striation effect appears to be caused by resistivity and recombination center variations. Up to 30 percent variations in resistivity was measured across a sample.
An ultrasonic scan procedure using the pulse-echo contact configuration was employed to obtain maps of pore fraction variations in sintered silicon nitride samples in terms of ultrasonic material properties. Ultrasonic velocity, attenuation coefficient, and reflection coefficient images were obtained simultaneously over a broad band of frequencies (e.g., 30 to 110 MHz) by using spectroscopic analysis. Liquid and membrane (dry) coupling techniques and longitudinal and shear-wave energies were used. The major results include the following: Ultrasonic velocity (longitudinal and shear wave) images revealed and correlated with the extent of average through-thickness pore fraction variations in the silicon nitride disks. Attenuation coefficient images revealed pore fraction nonuniformity due to the scattering that occurred at boundaries between regions of high and low pore fraction. Velocity and attenuation coefficient images were each nearly identical for machined and polished disks, making the method readily applicable to machined materials. Velocity images were similar for wet and membrane coupling. Maps of apparent Poisson's ratio constructed from longitudinal and shear-wave velocities quantified Poisson's ratio variations across a silicon nitride disk. Thermal wave images of a disk indicated transient thermal behavior variations that correlated with observed variations in pore fraction and velocity and attenuation coefficients.
There has been a continuing evolution toward larger arrays of infrared detectors, and the technology base derived from the Galileo Near Infrared Mapping Spectrometer (NIMS) has been expanded to linear arrays including from 128 to 512 elements. This advance is based on the commercial availability of high-quality InSb photodiodes and 128/256 element FET switch MUX's (multiplexing elements). The present investigation is concerned with an experimental 128-element linear imager using InSb detectors and silicon MUX for readout. Attention is given to detector array electrical characteristics, the detector readout architecture, noise, and special effects.
The development and testing of a detector to be used in the Energetic X-ray Imaging Telescope Experiment (EXITE) are reported. It consists of a 34 cm diameter NaI(Tl) crystal coupled directly to a single large image intensifier tube with associated silicon PIN diode readout. The measured spatial and energy resolutions at 122 keV are 6mm (FWHM) and 9 percent (FWHM), respectively. This energy resolution is about 50 percent better than that of any previously flown hard X-ray experiment. These resolutions decrease with the square root of the energy of the incident X-ray, indicating that they are determined by the number of photons emitted in the NaI(Tl) scintillator light flash.
Acoustic particle displacements and velocities inside a normal incidence impedance tube have been successfully measured for a variety of pure tone sound fields using Digital Particle Image Velocimetry (DPIV). The DPIV system utilized two 600-mj Nd:YAG lasers to generate a double-pulsed light sheet synchronized with the sound field and used to illuminate a portion of the oscillatory flow inside the tube. A high resolution (1320 x 1035 pixel), 8-bit camera was used to capture double-exposed images of 2.7-micron hollow silicon dioxide tracer particles inside the tube. Classical spatial autocorrelation analysis techniques were used to ascertain the acoustic particle displacements and associated velocities for various sound field intensities and frequencies. The results show that particle displacements spanning a range of 1-60 microns can be measured for incident sound pressure levels of 100-130 dB and for frequencies spanning 500-1000 Hz. The ability to resolve 1 micron particle displacements at sound pressure levels in the 100 dB range allows the use of DPIV systems for measurement of sound fields at much lower sound pressure levels than had been previously possible. Representative impedance tube data as well as an uncertainty analysis for the measurements are presented.
An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.
Zodiac II is a proposed balloon-borne science investigation of debris disks around nearby stars. Debris disks are analogs of the Asteroid Belt (mainly rocky) and Kuiper Belt (mainly icy) in our Solar System. Zodiac II will measure the size, shape, brightness, and color of a statistically significant sample of disks. These measurements will enable us to probe these fundamental questions: what do debris disks tell us about the evolution of planetary systems; how are debris disks produced; how are debris disks shaped by planets; what materials are debris disks made of; how much dust do debris disks make as they grind down; and how long do debris disks live? In addition, Zodiac II will observe hot, young exoplanets as targets of opportunity. The Zodiac II instrument is a 1.1-m diameter SiC (Silicone carbide) telescope and an imaging coronagraph on a gondola carried by a stratospheric balloon. Its data product is a set of images of each targeted debris disk in four broad visible-wavelength bands. Zodiac II will address its science questions by taking high-resolution, multi-wavelength images of the debris disks around tens of nearby stars. Mid-latitude flights are considered: overnight test flights in the US followed by half-global flights in the Southern Hemisphere. These longer flights are required to fully explore the set of known debris disks accessible only to Zodiac II. On these targets, it will be 100 times more sensitive than the Hubble Space Telescope's Advanced Camera for Surveys (HST/ACS); no existing telescope can match the Zodiac II contrast and resolution performance. A second objective of Zodiac II is to use the near-space environment to raise the Technology Readiness Level (TRL) of SiC mirrors, internal coronagraphs, deformable mirrors, and wavefront sensing and control, all potentially needed for a future space-based telescope for high-contrast exoplanet imaging.
Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.
Studies of cosmic X-ray sources have suffered from lack of focussing optics in the hard X-ray spectral region (E above 10 keV); in the absence of imaging optics, celestial X-rays are masked by the cosmic ray background, which severely degrades the detector sensitivity. There are several possible ways to develop grazing incidence imaging optics for this spectral region; we describe here one approach which utilizes numerous large diameter silicon wafers to form a flat-plate imaging telescope. A prototype imager of this type has been constructed, and we present measurements of surface quality, coalignment accuracy, and imaging ability.
An improved process that includes a high-temperature bonding subprocess has been developed to enable the fabrication of robust, flat, silicon-based charge-coupled devices (CCDs) for imaging in ultraviolet (UV) light and/or for detecting low-energy charged particles. The CCDs in question are devices on which CCD circuitry has already been formed and have been thinned for backsurface illumination. These CCDs may be delta doped, and aspects of this type of CCD have been described in several prior articles in NASA Tech Briefs. Unlike prior low-temperature bonding subprocesses based on the use of epoxies or waxes, the high-temperature bonding subprocess is compatible with the deltadoping process as well as with other CCD-fabrication processes. The present improved process and its bonding, thinning, and delta-doping subprocesses, are characterized as postfabrication processes because they are undertaken after the fabrication of CCD circuitry on the front side of a full-thickness silicon substrate. In a typical case, it is necessary to reduce the thickness of the CCD to between 10 and 20 m in order to take advantage of back-side illumination and in order to perform delta doping and/or other back-side treatment to enhance the quantum efficiency. In the prior approach to the fabrication of back-side-illuminated CCDs, the thinning subprocess turned each CCD into a free-standing membrane that was fragile and tended to become wrinkled. In the present improved process, prior to thinning and delta doping, a CCD is bonded on its front side to a silicon substrate that has been prefabricated to include cutouts to accommodate subsequent electrical connections to bonding pads on the CCD circuitry. The substrate provides structural support to increase ruggedness and maintain flatness. At the beginning of this process, the back side of a CCD as fabricated on a full-thickness substrate is polished. Silicon nitride is deposited on the back side, opposite the bonding pads on the front side, in order to define a relatively thick frame. The portion of the CCD not covered by the frame is the portion to be thinned by etching.
Device proposed to improve imaging of x rays. Features thin layer of oxide in virtual phase to increase quantum efficiency and depletion layer nearly as thick as epitaxial silicon layer to increase resolution. Applications include imaging spectrometers for x-ray astronomy, investigations of plasmas, and x-ray crystallography.
A simulated helicopter flight through a slalom course was presented on a Silicon Graphics IRIS 3130. The display represented the major visual characteristics of thermal images. Subjects were asked to maintain a designated altitude, while flying a slalom course between regularly spaced pylons. The presence of some of the high frequency details in the image improved subjects' ability to reach and maintain the correct altitude. A head-up-display helped in maintaining altitude, but impaired maneuvering around the poles. The results are interpreted in terms of the competition for visual resources between the HUD and the world view.
A silicon carbide disk was sintered from 2090 to 2190 C in 25-C steps. After each sintering step, the disk was examined using a precision acoustic scanning system to determine acoustic attenuation and velocity. The bulk density was found to vary nonmonotonically with sintering temperature. The density varied as much as 10 percent from its value at 2090 C during the sintering process. Local density fluctuations occurred in an organized and history-dependent way. These local density fluctuations varied up to + or - 7 percent of the bulk density and were made visible by acoustic attenuation and velocity mapping.
Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.
A charge-coupled device with a low-emissivity metal layer located between a sensing layer and a substrate provides reduction in ghost images. In a typical charge-coupled device of a silicon sensing layer, a silicon dioxide insulating layer, with a glass substrate and a metal carrier layer, a near-infrared photon, not absorbed in the first pass, enters the glass substrate, reflects from the metal carrier, thereby returning far from the original pixel in its entry path. The placement of a low-emissivity metal layer between the glass substrate and the sensing layer reflects near infrared photons before they reach the substrate so that they may be absorbed in the silicon nearer the pixel of their points of entry so that the reflected ghost image is coincident with the primary image for a sharper, brighter image.
Imaging biological molecules such as DNA at rates several times faster than conventional imaging techniques is carried out using a patterned silicon wafer having nano-machined grooves which hold individual molecular strands and periodically spaced unique bar codes permitting repeatably locating all images. The strands are coaxed into the grooves preferably using gravity and pulsed electric fields which induce electric charge attraction to the molecular strands in the bottom surfaces of the grooves. Differential imaging removes substrate artifacts.
Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.
An intrinsic silicon charge injection device (CID) television sensor array has been used in conjunction with a CaMoO4 colinear tunable acousto optic filter, a 61 inch reflector, a sophisticated computer system, and a digital color TV scan converter/computer to produce near IR images of Saturn and Jupiter with 10A spectral resolution and approximately 3 inch spatial resolution. The CID camera has successfully obtained digitized 100 x 100 array images with 5 minutes of exposure time, and slow-scanned readout to a computer. Details of the equipment setup, innovations, problems, experience, data and final equipment performance limits are given.