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NASA NTRS1990

Sounding rocket measurement of the absolute solar EUV flux utilizing a silicon photodiode

A newly developed stable and high quantum efficiency silicon photodiode was used to obtain an accurate measurement of the integrated absolute magnitude of the solar extreme UV photon flux in the spectral region between 50 and 800 A. The adjusted daily 10.7-cm solar radio flux and sunspot number were 168.4 and 121, respectively. The unattenuated absolute value of the solar EUV flux at 1 AU in the specified wavelength region was 6.81 x 10 to the 10th photons/sq cm per s. Based on a nominal probable error of 7 percent for National Institute of Standards and Technology detector efficiency measurements in the 50- to 500-A region (5 percent on longer wavelength measurements between 500 and 1216 A), and based on experimental errors associated with the present rocket instrumentation and analysis, a conservative total error estimate of about 14 percent is assigned to the absolute integral solar flux obtained.

Ogawa, H. S.↗

NASA NTRS2018

Development of a Silicon Tracker for the All-Sky Medium Energy Gamma-ray Observatory Prototype

The gamma-ray sky from several hundred keV to a hundred MeV has remained largely unexplored due to the challenging nature of detecting gamma rays in this regime. At lower energies, Compton scattering is the dominant interaction process whereas at higher energies pair production dominates, with a crossover at a few MeV. Thus, an instrument designed to work in this energy range must be optimized for both Compton and pair-production events. AMEGO, the All-sky Medium Energy Gamma-ray Observatory, a Probe-class mission in consideration for the 2020 decadal survey, is designed to operate at energies from 200 keV to > 10 GeV with over an order of magnitude increase in sensitivity and with superior angular and energy resolution compared to previous instruments. AMEGO comprises four major subsystems: a plastic anticoincidence detector for rejecting cosmic-ray events, a silicon tracker for tracking pair-production products and tracking and measuring the energies of Compton-scattered electrons, a cadmium-zinc-telluride (CZT) calorimeter for measuring the energy and location of Compton scattered photons, and a CsI calorimeter for measuring the energy of the pair-production products at high energies. A prototype instrument, known as ComPair, is under development at NASA’s Goddard Space Flight Center and the US Naval Research Laboratory. In this contribution, we provide details on the development of the silicon tracker subsystem.

Griffin, Sean↗

NASA NTRS1995

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fossum, Eric R.↗

NASA NTRS1982

Stress induced long wavelength photoconductivity in doped silicon infrared detectors

The long wavelength cutoff of a Si:P detector was extended to 34 microns by the application of a uniaxial stress. An unstressed Si:P photoconductive detector responds to photons of up to 28 microns wavelength. By applying a uniaxial stress to a detector along the /100/ crystal axis, the response was extended to approximately 34 microns. The /100/ axis was chosen as the stress direction because theoretical calculations predicted that such a stress extends the wavelength response more than one along the /110/ axis. These theoretical calculations were based upon fits to experimental data obtained at stresses of up to approximately kbar, and indicated that the extension in wavelength response continues to increase at much larger stresses.

Houck, J. R.↗

NASA NTRS2018

Astronomical X-Ray Optics Using Mono-Crystalline Silicon: High Resolution, Light Weight, and Low Cost

X-ray astronomy critically depends on X-ray optics. The capability of an X-ray telescope is largelydetermined by the point-spread function (PSF) and the photon-collection area of its mirrors, the same astelescopes in other wavelength bands. Since an X-ray telescope must be operated above the atmosphere inspace and that X-rays reflect only at grazing incidence, X-ray mirrors must be both lightweight and thin, bothof which add significant technical and engineering challenge to making an X-ray telescope. In this paper wereport our effort at NASA Goddard Space Flight Center (GSFC) of developing an approach to making an Xraymirror assembly that can be significantly better than the mirror assembly currently flying on the ChandraX-ray Observatory in each of the three aspects: PSF, effective area per unit mass, and production cost per uniteffective area. Our approach is based on the precision polishing of mono-crystalline silicon to fabricate thinand lightweight X-ray mirrors of the highest figure quality and micro-roughness, therefore, having thepotential of achieving diffraction-limited X-ray optics. When successfully developed, this approach will makeimplementable in the 2020s and 2030s many X-ray astronomical missions that are currently on the drawingboard, including sounding rocket flights such as OGRE, Explorer class missions such as STAR-X andFORCE, Probe class missions such as AXIS, TAP, and HEX-P, as well as large missions such as Lynx.

Zhang, William W.↗

NASA NTRS1985

Probability of detection of internal voids in structural ceramics using microfocus radiography

The reliability of microfocus x-radiography for detecting subsurface voids in structural ceramic test specimens was statistically evaluated. The microfocus system was operated in the projection mode using low X-ray photon energies (20 keV) and a 10 micro m focal spot. The statistics were developed for implanted subsurface voids in green and sintered silicon carbide and silicon nitride test specimens. These statistics were compared with previously-obtained statistics for implanted surface voids in similar specimens. Problems associated with void implantation are discussed. Statistical results are given as probability-of-detection curves at a 95 percent confidence level for voids ranging in size from 20 to 528 micro m in diameter.

Baaklini, G. Y.↗

NASA NTRS1986

Probability of detection of internal voids in structural ceramics using microfocus radiography

The reliability of microfocous X-radiography for detecting subsurface voids in structural ceramic test specimens was statistically evaluated. The microfocus system was operated in the projection mode using low X-ray photon energies (20 keV) and a 10 micro m focal spot. The statistics were developed for implanted subsurface voids in green and sintered silicon carbide and silicon nitride test specimens. These statistics were compared with previously-obtained statistics for implanted surface voids in similar specimens. Problems associated with void implantation are discussed. Statistical results are given as probability-of-detection curves at a 95 precent confidence level for voids ranging in size from 20 to 528 micro m in diameter.

Baaklini, G. Y.↗

NASA NTRS1993

A radiation belt monitor for the High Energy Transient Experiment Satellite

A Radiation Belt Monitor (RBM) sensitive to protons and electrons with energy approximately greater than 0.5 MeV has been designed for the High Energy Transient Experiment (HETE) satellite in order to: first, control the on-off configuration of the experiments (i.e. those susceptible to proton damage); and second, to indicate the presence of proton and/or electron events that could masquerade as legitimate high energy photon events. One of the two RBM channels has an enhanced sensitivity to electrons. Each channel of the RBM, based on a PIN silicon diode, requires a typical power of 6 milliwatts. Tests have been performed with protons with energies from approximately 0.1 to 2.5 MeV (generated by a Cockcroft-Walton linear accelerator via the d(d,p)t reaction), and with electrons with energies up to 1 MeV (from a 1.0 microcurie Bi-207 source).

Lo, D. H.↗

NASA NTRS2004

Background Count Rates and the Anti-Coincidence Detector on the Instrument on Astro-E2

Minimum ionizing particles incident on the XRS microcalorimeter array will deposit energy in the pixels on the same scale as an x-ray photon and would be confused with x-rays without an anti-coincidence detector. The XRS anti-coincidence detector is a silicon ionization detector placed directly behind the calorimeter array. Given an isotropic particle flux, 98% of those particles that pass through a calorimeter pixel will also deposit energy in the anti-coincidence detector. Particle events that are not rejected by coincidence are those that pass through at small angles relative to the plane of the array, and thus deposit more energy. Modeling with GEANT4 showed that only 0.1% of all protons incident on the array miss the anti-coincidence detector yet deposit less than 10 keV in a pixel. The unrejected background will thus be dominated by secondary events; we will provide an estimate of this rate. Protons incident on the thick silicon frame around the active area of the array deposit enough energy t o heat the whole chip slightly. This results in small simultaneous pulses on multiple pixels. These can be easily rejected by pixel-to-pixel coincidence. We will discuss the impact of these events on the instrument dead time and will present the expected rate. We will present laboratory background data demonstrating the performance of the anti-coincidence detector and the effectiveness of coincidence analysis in the laboratory environment.

Kilbourne, C. A.↗

NASA NTRS2019

Fabrication of Phononic-Isolated Kinetic Inductance Detectors

Kinetic inductance detectors (KID) have received increased interest due to their relative ease of fabrication, low noise, and scalability to large format arrays required by next generation of astronomical telescopes. The development of KIDs has progressed rapidly, with very low noise equivalent power demonstrated by several groups and KIDs arrays implemented in several ground-based and air-borne instruments. In this paper, we describe a new fabrication process which consists of a membrane isolated KID incorporating a phononic bandgap structure tuned to block recombination phonons from escaping to the thermal bath. This architecture is designed to increase the quasi-particle lifetime and results in increased responsivity to signal photons and lower noise. These devices have been fabricated as lumped-element resonators with hafnium inductors and Nb capacitors on low stress silicon nitride and silicon-on-insulator membranes. We discuss the fabrication process, which uses a combination of sub-micron laser based direct write lithography and nanoscale electron beam lithography.

Denis, Kevin L.↗

NASA NTRS2013

High-energy Emission from the Composite Supernova Remnant MSH 15-56

MSH 1556 (G326.3-1.8) is a composite supernova remnant (SNR) that consists of an SNR shell and a displaced pulsar wind nebula (PWN) in the radio. We present XMM-Newton and Chandra X-ray observations of the remnant that reveal a compact source at the tip of the radio PWN and complex structures that provide evidence for mixing of the supernova (SN) ejecta with PWN material following a reverse shock interaction. The X-ray spectra are well fitted by a non-thermal power-law model whose photon index steepens with distance from the presumed pulsar, and a thermal component with an average temperature of 0.55 keV. The enhanced abundances of silicon and sulfur in some regions, and the similar temperature and ionization timescale, suggest that much of the X-ray emission can be attributed to SN ejecta that have either been heated by the reverse shock or swept up by the PWN. We find one region with a lower temperature of 0.3 keV that appears to be in ionization equilibrium.Assuming the Sedov model, we derive a number of SNR properties, including an age of 16,500 yr. Modeling of the gamma-ray emission detected by Fermi shows that the emission may originate from the reverse shock-crushed PWN.

Temim, Tea↗

NASA NTRS2016

Lightweight and High-Resolution Single Crystal Silicon Optics for X-ray Astronomy

We describe an approach to building mirror assemblies for next generation X-ray telescopes. It incorporates knowledge and lessons learned from building existing telescopes, including Chandra, XMM-Newton, Suzaku, and NuSTAR, as well as from our direct experience of the last 15 years developing mirror technology for the Constellation-X and International X-ray Observatory mission concepts. This approach combines single crystal silicon and precision polishing, thus has the potential of achieving the highest possible angular resolution with the least possible mass. Moreover, it is simple, consisting of several technical elements that can be developed independently in parallel. Lastly, it is highly amenable to mass production, therefore enabling the making of telescopes of very large photon collecting areas.

X-ray optics↗

NASA NTRS1989

Solid state photomultiplier for astronomy, phase 2

Epitaxial layers with varying donor concentration profiles were grown on silicon substrate wafers using chemical vapor deposition (CVD) techniques, and solid state photomultiplier (SSPM) devices were fabricated from the wafers. Representative detectors were tested in a low background photon flux, low temperature environment to determine the device characteristics for comparison to NASA goals for astronomical applications. The SSPM temperatures varied between 6 and 11 K with background fluxes in the range from less than 5 x 10 to the 6th power to 10 to the 13th power photons/square cm per second at wavelengths of 3.2 and 20 cm. Measured parameters included quantum efficiency, dark count rate and bias current. Temperature for optimal performance is 10 K, the highest ever obtained for SSPMs. The devices exhibit a combination of the lowest dark current and highest quantum efficiency yet achieved. Experimental data were reduced, analyzed and used to generate recommendations for future studies. The background and present status of the microscopic theory of SSPM operation were reviewed and summarized. Present emphasis is on modeling of the avalanche process which is the basis for SSPM operation. Approaches to the solution of the Boltzmann transport equation are described and the treatment of electron scattering mechanisms is presented. The microscopic single-electron transport theory is ready to be implemented for large-scale computations.

Besser, P. J.↗

NASA NTRS1989

Fast molecular shocks. I - Reformation of molecules behind a dissociative shock

The physical and chemical processes that operate in the cooling gas behind a fast, dissociative, single-fluid shock propagating in a dense interstellar cloud are discussed. The treatment extends previous theoretical work on fast molecular shocks by including the effects of the conversion of Ly-alpha photons into radiation of the two-photon continuum and into H2 Lyman band emission lines, the effects of CO photodissociation following line absorption, and the formation and destruction of molecules containing the elements nitrogen, silicon, and sulphur, and of the complex hydrocarbons. Abundance profiles for the molecular species of interest are presented. After molecular hydrogen begins to reform, by means of gas phase and grain surface processes, the neutral species OH, H2O, O2, CO, CN, HCN, N2, NO, SO, and SiO reach substantial abundances. The molecular ions HeH(+), OH(+), SO(+), CH(+), H2(+), and H3(+), are produced while the gas is still hot and partially ionized. Emissions from them provide a possible diagnostic probe of fast molecular shocks.

Neufeld, David A.↗

NASA NTRS1993

Defects in electro-optically active polymer solids

There is considerable current interest in the application of organic and polymeric materials for electronic and photonic devices. The rapid, non-linear optical (NLO) response of these materials makes them attractive candidates for waveguides, interferometers, and frequency doublers. In order to realize the full potential of these systems, it is necessary to develop processing schemes which can fabricate these molecules into ordered arrangements. There is enormous potential for introducing well-defined, local variations in microstructure to control the photonic properties of organic materials by rational 'defect engineering.' This effort may eventually become as technologically important as the manipulation of the electronic structure of solid-state silicon based devices is at present. The success of this endeavor will require complimentary efforts in the synthesis, processing, and characterization of new materials. Detailed information about local microstructure will be necessary to understand the influence of symmetry breaking of the solid phases near point, line, and planar defects. In metallic and inorganic polycrystalline materials, defects play an important role in modifying macroscopic properties. To understand the influence of particular defects on the properties of materials, it has proven useful to isolate the defect by creating bicrystals between two-component single crystals. In this way the geometry of a grain boundary defect and its effect on macroscopic properties can be determined unambiguously. In crystalline polymers it would be valuable to establish a similar depth of understanding about the relationship between defect structure and macroscopic properties. Conventionally processed crystalline polymers have small crystallites (10-20 nm), which implies a large defect density in the solid state. Although this means that defects may play an important or even dominant role in crystalline or liquid crystalline polymer systems, it also makes it difficult to isolate the effect of a particular boundary on a macroscopically observed property. However, the development of solid-state and thin-film polymerization mechanisms have facilitated the synthesis of highly organized and ordered polymers. These systems provide a unique opportunity to isolate and investigate in detail the structure of covalently bonded solids near defects and the effect of these defects on the properties of the material. The study of defects in solid polymers has been the subject of a recent review (Martin, 1993).

Martin, David C.↗

NASA NTRS1993

Nonlinear optical thin films

A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film-forming material in a working device is a complex, multifaceted endeavor. It requires close attention to maintaining the optical properties of the electro-optic active portion of the polymer while manipulating the polymer structure to obtain the desired secondary polymer properties.

Leslie, Thomas M.↗

NASA NTRS1992

Eye-safe visible wavelength lidar

Recent technological advances on several fronts offer the possibility for relatively low-cost, eye-safe visible-wavelength lidar systems for autonomous aerosol/environmental monitoring applications. Improved silicon photodiodes and avalanche photodiodes that have become available offer high-quantum-efficiency detection at very low dark counts (10 to 1000 count/s) and can be used in a photon counting mode for signal plus background and dark current photoelectron count rates of megahertz. The essential requirements and features of a possible lidar system that capitalizes on technical advances on several fronts are outlined. A baseline lidar system is suggested for monitoring tropospheric and stratospheric aerosols. Sensitivity to wavelength, background radiation, detector characteristics, and other system parameters is discussed for several simulated data sets.

Cooley, T. W.↗

NASA NTRS2005

Development of Ultra-High Sensivity Silicon Carbide Detectors

A variety of silicon carbide (SiC) detectors have been developed to study the sensitivity of SiC ultraviolet (UV) detectors, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, Sic photo-detectors showed excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are orders of magnitude higher than that of their competitors, such as Si photodiodes, and comparable to the D* of photomultiplier tubes (PMTs). To pursue the ultimate detection sensitivity, SiC APDs and single photon-counting avalanche diodes (SPADs) have also been fabricated. By operating the SiC APDs at a linear mode gain over 10(exp 6), SPADs in UV have been demonstrated. SiC UV detectors have great potential for use in solar blind UV detection and biosensing. Moreover, SiC detectors have excellent radiation hardness and high temperature tolerance which makes them ideal for extreme environment applications such as in space or on the surface of the Moon or Mars.

Yan, Feng↗