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Results for “Single event effects testing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

A First Look at 22 nm FDSOI SRAM Single-Event Test Results

We will present the first ever single-event effects testing results on a 22 nm fully-depleted silicon-on-insulator test chip. The 128 MB SRAMs were irradiated with heavy ions and the results are compared to previous technology generations.

Silicon-on-insulator↗
NASA NTRS2016

Heavy-Ion Testing of the Freescale Qorivva 32-bit Automotive-Grade MCU

We present single-event effects testing results from a commercially-available automotive microcontroller. We discuss the difficulties encountered testing with commercially-provided evaluation boards while attempting to classify the complex and varied failure modes of a modern 32-bit microcontroller. This work also describes some of the possible advantages to using off-the-shelf automotive-grade electronics for low-risk aerospace applications.

Heavy-Ion Testing↗
NASA NTRS2015

Decline in Radiation Hardened Microcircuit Infrastructure

Two areas of radiation hardened microcircuit infrastructure will be discussed: 1) The availability and performance of radiation hardened microcircuits, and, and 2) The access to radiation test facilities primarily for proton single event effects (SEE) testing. Other areas not discussed, but are a concern include: The challenge for maintaining radiation effects tool access for assurance purposes, and, the access to radiation test facilities primarily for heavy ion single event effects (SEE) testing. Status and implications will be discussed for each area.

performance of radiation hardened microcircuits↗
NASA NTRS2023

An Examination of Heavy Ion-Induced Persistent Visual Error Signatures in an Electronic Display Driver Integrated Circuit

Heavy ion irradiation of a display driver integrated circuit (DDIC) was performed, and persistent visual error signatures were captured. Based on the heavy ion results, error signatures were localized to configuration registers motivate potential mitigation techniques and observations relating to single event effect susceptibility. DDICs serve as an integral component of integrated display systems that will require the development of single event effects test methodologies in anticipation of extensive use in crewed spacecrafts outside of the Earth’s geomagnetic protection.

Electronic Displays↗
NASA NTRS2019

What's My Prior? Baby Steps Toward Big Data

After four decades of single-event effects testing, radiation engineers face pressure to find alternatives to reduce or eliminate testing costs. Many of these alternatives focus on use of archival test data to bound SEE risk for similar parts. This presentation examines the challenges and limitations of such analyses and suggests analysis techniques and goals that are likely to be most appropriate for such efforts.

statistics and probability↗
NASA NTRS2017

Silicon Power MOSFETs

Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.

trench-gate MOSFET↗
NASA NTRS2004

Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory

We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.

Oldham, Timothy R.↗
NASA NTRS2014

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗
NASA NTRS2011

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Single Event Gate Rupture↗