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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Morphology and Structure of ZnO Films Synthesized by Off-Axis Sputtering Deposition

ZnO is a wide-band-gap oxide material that has many applications. A new potential application of ZnO material is for light emitting devices since its structure and electrical properties are similar to that of the GaN material (a blue laser candidate). It also is a good substrate for fabricating GaN-based devices. Off-axis sputtering technique has revealed great potential in synthesizing excellent oxide materials because the negative ion bombardment is greatly reduced when adatoms condense on substrates. The surface of films grown by off-axis sputtering will be much smoother than that produced in a regular sputtering configuration. A growth mechanism is studied by investigating the morphology and structure of ZnO films under different growth conditions and orientations. ZnO films are deposited on (0001) sapphire and quartz substrates by off- axis sputtering deposition at various oxygen/argon mixture ratios and pressures and at different temperatures. All films reveal highly textured structures on quartz substrates and epitaxial growth on sapphire substrates. Two off-axis configurations, vertical and horizontal orientations are conducted to study the process of film growth, surface morphology, and film structure. X-ray diffraction, scanning probe microscopy, and electrical measurements are used to characterize these films. Detailed results will be discussed in the presentation. Keywords: ZnO, Photonic material, Off-axis sputtering, Growth mechanism

Zhu, Shen↗
NASA NTRS1999

Orientation Effects in ZnO Films Using Off-Axis Sputtering Deposition

ZnO is a wide-band-gap oxide material and has been used in numerous applications. It is also a good substrate for fabricating GaN-based (a blue laser candidate) devices. Off-axis sputtering technique is one of the best techniques in synthesizing oxide materials because negative ion bombardment and particle kinetic energy is greatly reduced when adatoms condense on substrates. Since the sputtered material from the target arrive on the substrate surface at a 90 deg. configuration, which differs from the normal sputtering geometry, it is expected that the film uniformity and composition distributions will be affected. However, the details of these properties and mechanisms have not been well studied. ZnO films are synthesized on (0001) sapphire and quartz substrates by off-axis sputtering deposition in various oxygen/argon mixture ratios and pressures at different temperatures. Substrates and sputtering sources are placed at three different orientations that are orthogonal to each other. The normal direction of a substrate is parallel to the gravity vector and the other is perpendicular to it. Film thickness profiles at different growth orientations are determined using a profimeter. All films grown at high temperatures have highly textured structures on quartz substrates and epitaxially grow on sapphire substrates. Because of this process, the film surface is very smooth. X-ray diffraction, scanning probe microscopy, and Fourier transfer infrared spectroscopy, and electrical measurements will be used to characterize these films. Detailed results will be discussed in the presentation.

Zhu, Shen↗
NASA NTRS1998

Fluoropolymer Films Deposited by RF Plasma Sputtering of Polytetrafluoroethylene Using Inert Gases

The FT-IR (Fourier Transform Infrared), UV (Ultraviolet) and XPS (X Ray Photoelectron Spectroscopy) spectra of fluoropolymer films (SPTFE) deposited by rf (radio frequency) plasma sputtering of polytetrafluoroethylene (PTFE), using Ne, Kr and Xe as sputtering gases, were obtained and compared with prior spectra for SPTFE formed using He and Ar. The F/C (fluorine / carbon) ratios for SPTFE films (1.44-1.55), obtained at a rf power of 10 W, were essentially the same for all five rare gases, there being no trend of decreasing fluorine content in the SPTFE product with increasing atomic weight of the sputtering gas - contrary to the momentum transfer notion advanced by M. E. Ryan, et al. Increasing rf power from 10 to 50 W resulted in successively lower F/C ratios for SPTFE (e.g., from 1.55 to 1.21 in the case of Xe plasma-sputtered PTFE), accompanied by sputtering of the glass reactor and deposition of fragments of sodium aluminum silicate occurring at 40 W and above. In order to achieve a "Teflon-like" SPTFE structure (i.e., products with as high a F/C ratio as possible) in a given plasma reactor, an optimum rf power must be found, which in the present case was approximately 10 W.

Golub, Morton A.↗
NASA NTRS2001

Sputter-deposited fuel cell membranes and electrodes

A method for preparing a membrane for use in a fuel cell membrane electrode assembly includes the steps of providing an electrolyte membrane, and sputter-depositing a catalyst onto the electrolyte membrane. The sputter-deposited catalyst may be applied to multiple sides of the electrolyte membrane. A method for forming an electrode for use in a fuel cell membrane electrode assembly includes the steps of obtaining a catalyst, obtaining a backing, and sputter-depositing the catalyst onto the backing. The membranes and electrodes are useful for assembling fuel cells that include an anode electrode, a cathode electrode, a fuel supply, and an electrolyte membrane, wherein the electrolyte membrane includes a sputter-deposited catalyst, and the sputter-deposited catalyst is effective for sustaining a voltage across a membrane electrode assembly in the fuel cell.

Narayanan, Sekharipuram R.↗
NASA NTRS2008

A Closer Look at Solar Wind Sputtering of Lunar Surface Materials

Solar-wind induced potential sputtering of the lunar surface may be a more efficient erosive mechanism than the "standard" kinetic (or physical) sputtering. This is partly based on new but limited laboratory measurements which show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. The enhancements seen in the laboratory can be orders of magnitude for some surfaces and highly charged incident ions, but seem to depend very sensitively on the properties of the impacted surface in addition to the fluence, energy and charge of the impacting ion. For oxides, potential sputtering yields are markedly enhanced and sputtered species, especially hydrogen and light ions, show marked dependence on both charge and dose.

Barghouty, A. F.↗
NASA NTRS2012

Solar Ion Sputter Deposition in the Lunar Regolith: Experimental Simulation Using Focused-Ion Beam Techniques

As regions of the lunar regolith undergo space weathering, their component grains develop compositionally and microstructurally complex outer coatings or "rims" ranging in thickness from a few 10 s to a few 100's of nm. Rims on grains in the finest size fractions (e.g., <20 m) of mature lunar regoliths contain optically-active concentrations of nm size metallic Fe spherules, or "nanophase Fe(sup o)" that redden and attenuate optical reflectance spectral features important in lunar remote sensing. Understanding the mechanisms for rim formation is therefore a key part of connecting the drivers of mineralogical and chemical changes in the lunar regolith with how lunar terrains are observed to become space weathered from a remotely-sensed point of view. As interpreted based on analytical transmission electron microscope (TEM) studies, rims are produced from varying relative contributions from: 1) direct solar ion irradiation effects that amorphize or otherwise modify the outer surface of the original host grain, and 2) nanoscale, layer-like, deposition of extrinsic material processed from the surrounding soil. This extrinsic/deposited material is the dominant physical host for nanophase Fe(sup o) in the rims. An important lingering uncertainty is whether this deposited material condensed from regolith components locally vaporized in micrometeorite or larger impacts, or whether it formed as solar wind ions sputtered exposed soil and re-deposited the sputtered ions on less exposed areas. Deciding which of these mechanisms is dominant, or possibility exclusive, has been hampered because there is an insufficient library of chemical and microstructural "fingerprints" to distinguish deposits produced by the two processes. Experimental sputter deposition / characterization studies relevant to rim formation have particularly lagged since the early post-Apollo experiments of Hapke and others, especially with regard to application of TEM-based characterization techniques. Here we report on a novel design for simulating solar ion sputter deposition in the lunar regolith, with characterization of the resulting sputter deposits by an array of advanced analytical TEM techniques.

Christoffersen, R.↗
NASA NTRS2012

Kinetic and Potential Sputtering of Lunar Regolith: The Contribution of the Heavy Highly Charged (Minority) Solar Wind Ions

Solar wind sputtering of the lunar surface helps determine the composition of the lunar exosphere and contributes to surface weathering. To date, only the effects of the two dominant solar wind constituents, H+ and He+, have been considered. The heavier, less abundant solar wind constituents have much larger sputtering yields because they have greater mass (kinetic sputtering) and they are highly charged (potential sputtering) Their contribution to total sputtering can therefore be orders of magnitude larger than their relative abundances would suggest

Meyer, F. W.↗
NASA NTRS2016

Carbon Back Sputter Modeling for Hall Thruster Testing

Lifetime requirements for electric propulsion devices, including Hall Effect thrusters, are continually increasing, driven in part by NASA's inclusion of this technology in it's exploration architecture. NASA will demonstrate high-power electric propulsion system on the Solar Electric Propulsion Technology Demonstration Mission (SEP TDM). The Asteroid Redirect Robotic mission is one candidate SEP TDM, which is projected to require tens of thousands of thruster life. As thruster life is increased, for example through the use of improved magnetic field designs, the relative influence of facility effects increases. One such effect is the sputtering and redeposition, or back sputter, of facility materials by the high energy thruster plumes. In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) project, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Center's Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 1 micron/kh in a fully carbon-lined chamber. A more detailed numerical Monte Carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values on the order of 1.5 - 2 micron/kh at 600 V and 12.5 kW.

Propulsion↗
DOE OSTI2026

Nb3Sn Superconducting Radiofrequency Cavity Fabricated by Sputter Deposition from a Stoichiometric Target

Nb$_3$Sn is a promising coating material for superconducting radiofrequency cavities in next-generation accelerators due to its higher superconducting transition temperature (~18.3 K) and superheating field (~400 mT), offering the potential to surpass the intrinsic performance limits of bulk niobium. We developed a sputter coating technique employing a stoichiometric target to fabricate Nb$_3$Sn films on the inner surfaces of niobium cavities. A Nb$_3$Sn tube target, prepared by growing a >20 m thick Nb$_3$Sn coating on the surface of a Nb tube via a Sn vapor diffusion process, was used in a DC cylindrical magnetron sputtering system. Approximately 170 nm thick Nb-Sn films were sputter-coated onto flat Nb substrates positioned to replicate the beam tube and equator regions of a 2.6 GHz cavity, followed by annealing at 950 °C for 3 hours to form Nb$_3$Sn. The composition, morphology, and structure of the annealed Nb$_3$Sn films were examined. Then, a ~1.2 m-thick film was sputter-coated onto the interior of a 2.6 GHz Nb cavity following the procedure developed for the flat samples. The cavity was subsequently annealed under the same conditions used for the flat samples. Cryogenic RF testing of the sputter-coated cavity demonstrated a T$_c$ of approximately 17.8 K, consistent with Nb$_3$Sn layer. Subsequently, the cavity underwent a light Sn recoating followed by a vapor diffusion Nb$_3$Sn coating process, achieving a quality factor of approximately 8.5 × 10$^9$ and an accelerating gradient of up to 11.3 MV/m at 4.2 K.

Shakel, Md Sharifuzzaman [Old Dominion U.; Jeffers↗
DOE OSTI2020

Crystallization of TiO 2 polymorphs from RF-sputtered, amorphous thin-film precursors

Crystalline TiO 2 films of anatase, brookite, and rutile are reproducibly made from amorphous precursors deposited by RF magnetron sputtering, producing large-area, single phase films of uniform thickness. Sputtered amorphous TiO 2 precursor thin films follow the general behavior observed for amorphous precursor thin films generated by pulsed laser deposition, namely, that oxygen deficiency is necessary for the formation of brookite and rutile. We quantify the oxygen deficiency and correlate it with the long wavelength optical absorption. We find that the precursor deposition rate is also a contributing factor to phase selection and that brookite and rutile form from films deposited more rapidly and anatase from films deposited more slowly. Sputtered and pulsed laser deposited amorphous precursor films prepared with similar oxygen deficiency and similar thickness result in the same final state after annealing, but the rate for sputtered precursors is slower.

14 SOLAR ENERGY↗
DOE OSTI2018

Comprehensive characterization of CIGS absorber layers grown by one-step sputtering process

We have demonstrated that the use of a one-step sputtering process allowed for the fabrication of copper indium gallium diselenide (CIGS) thin films by RF magnetron sputtering without an additional selenization process. The CIGS thin films deposited at different substrate temperatures were synthesized on soda-lime glass (SLG) substrates using a single quaternary CIGS target. The film composition ratios of ([Cu]/[In]+[Ga]), ([Ga]/[In]+[Ga]), and ([Se]/[Cu]+[In]+[Ga]) were almost consistent with those of the sputtering target. X-ray diffraction (XRD) and Raman results showed that the crystallinity of the CIGS thin films was gradually improved as substrate temperatures increased. Transmission electron microscopy (TEM) showed that the films grown at 600 degrees C have a columnar structure with the grain size of ~100 nm. In addition, for the CIGS films grown at 600 degrees C, TEM-EDX analysis revealed that the synchronized fluctuation of the Cu and Se signals was observed in the direction of the film depth, while the In and Ga signals were constant. As a result, the CIGS solar cell made using the film showed a degraded cell efficiency of 2.5%, which might be have been caused by not only Cu-rich and Se-poor compositions but the locally unstable composition in the CIGS films fabricated by one-step sputtering.

14 SOLAR ENERGY↗
DOE OSTI2018

Influence of heavier impurity deposition on surface morphology development and sputtering behavior explored in multiple linear plasma devices

Surface morphology development and sputtering behavior of Cr, as a test material, have been explored under He plasma exposure at a low incident ion energy of ~80 eV in multiple linear plasma devices: PISCES-A, PSI-2, and NAGDIS-II. From comparison of the experiments in these devices, deposition of a small amount of heavier impurities (Mo in NAGDIS-II and Ta in PISCES-A) onto Cr is found to result in the formation of cone structures on the Cr surface due to preferential sputtering, resulting in a significant reduction (up to ~10 times) in the sputtering yield of Cr due to line-of-sight redeposition onto the neighboring cones. The heavier impurities are thought to originate from a sample holding cap/cover, which can be sputtered by a trace amount of intrinsic impurities (C, O, etc) as well as by Cr ionized in the plasma. It can be concluded from the Cr experiments, as well as additional Be data collected in PISCES-B, that heavier impurity deposition plays a major role in the cone structure formation, while other mechanisms (e.g. surface irregularity and oxide) also exist.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Deposition pressure dependent structural and optoelectronic properties of ex-situ boron-doped poly-Si/SiO x passivating contacts based on sputtered silicon

Among common methods to form polycrystalline silicon (poly-Si) films for passivating-contact solar cells, physical vapor deposition, in particular sputtering, is the safest one as it does not require any toxic gaseous precursors. One of the critical parameters to control the properties of sputtered silicon films is their deposition pressure. In this work, structural and optoelectronic characteristics of ex-situ boron-doped poly-Si/SiO x passivating contacts, formed from sputtered intrinsic amorphous silicon (a-Si) deposited at different pressures on top of SiO x /c-Si substrates and subjected to a high-temperature boron diffusion step, are investigated. The deposition rate and density of the as-deposited a-Si films increase with reducing pressure. Low-temperature photoluminescence spectra captured from the as-deposited samples at different pressures do not show typical emissions from hydrogenated a-Si. Meanwhile, their Fourier-transform infrared absorption spectra all show Si–H stretching modes, indicating that hydrogen had been initially incorporated into the chemical SiO x layers and eventually hydrogenated the a-Si/SiO x interfaces during the sputtering process. After the high-temperature boron-diffusion step, all hydrogen-related peaks disappear. Lower pressure films (1.5 and 2.5 mTorr) show more consistent improved performance after hydrogen treatments, compared to higher pressure films (4 and 5 mTorr). Overall, the resultant passivating contacts at 2.5 mTorr achieve a low single-side recombination current density Jo of ~9 fA/cm 2 , whereas their contact resistivity is still low at 15 mO cm 2 .

14 SOLAR ENERGY↗
DOE OSTI2021

Sputter-deposited CdMgTe for rear contact to CdSeTe/CdTe solar cells

CdTe-based photovoltaic device performance improvement is predominantly limited by open-circuit voltage. This work approaches the voltage deficit challenge through the incorporation of a cadmium magnesium telluride (CdMgTe) electron reflector layer at the back of 1.5- μm CdSeTe/CdTe absorbers to reduce back-surface recombination through a conduction band offset. A sputtered CdMgTe electron reflector layer permitted low fabrication temperatures and circumvented the intolerance of CdMgTe to thermal processing present in traditional close-space sublimation (CSS)-deposited CdMgTe devices. Here, we demonstrate that sputtered CdMgTe simultaneously promotes the retention of chlorine passivation and magnesium which is not feasible with CSS fabrication. We also show the importance of the Cu and Te back contact order in CdMgTe devices. Through the optimization of the sputtered CdMgTe substrate temperature, doping, and back structure configuration, 1.5 μm CdSeTe/CdTe devices with a sputtered CdMgTe layer achieved an efficiency of 16.0%, significantly higher than with CSS CdMgTe, and demonstrated partial enactment of electron-reflector behavior.

14 SOLAR ENERGY↗
DOE OSTI2023

Influence of oxygen on the optical and electrical properties of magnetron-sputtered indium tin oxide thin films at ambient temperature

Indium Tin Oxide (ITO) thin films are commonly used as transparent conductive layers in the production of solar cells. ITO films are typically heat-treated at temperatures exceeding 200 °C after magnetron sputtering to optimize the physical, optical, and electrical characteristics for photovoltaic devices. Here, this high temperature heating procedure greatly limits the use of potential substrates, particularly those comprised of low-temperature-rated polymers. Herein, we examine the physical, optical, and electrical transport effects of oxygen:argon plasmas during radio frequency magnetron sputtering of ITO on glass and flexible polymer surfaces without subsequent heat treatment. ITO thin films were characterized via sheet resistance testing, UV-Vis spectroscopy, X-ray diffraction, and scanning electron microscopy imaging. Sheet resistance measurements revealed an increase in surface resistance with increasing oxygen concentration during sputtering. UV-Vis optical transmittance measurements demonstrated an improvement in optical transmittance with an increase in oxygen concentration reaching a maximum transmittance at an oxygen concentration of 1-2 %. Most importantly, it was discovered that producing bilayers of ITO with pure argon sputtered plasmas followed by oxygen:argon plasmas produced ITO thin films with suitable resistance and transmittance without the need for high temperature post annealing. These results highlight a methodology for the deposition of ITO thin films on temperature sensitive substrates for flexible photovoltaics and low-cost module production.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Carbon Electrode with Sputtered Au Coating for Efficient and Stable Perovskite Solar Cells

Halide perovskite solar cells (PSCs) represent a low-cost and high-efficiency solar technology. However, most of the highly efficient PSCs need a noble electrode, such as Au, through thermal evaporation. Here it is reported that a sputtered Au electrode on a PSC could damage the organic hole transport layer (HTL) and the perovskite layer. Here, we report a simple, yet effective sputtered gold nanoparticle decorated carbon electrode to fabricate efficient and stable planar PSCs. The sputtered Au layer on the doctor-bladed coated carbon electrode can be directly applied to the perovskite semicells by mechanical stacking. By optimizing the gold thickness, a power conversion efficiency (PCE) of 16.87% was obtained for the composite electrode-based PSC, while the reference device recorded a PCE of 12.38%. The composite electrode-based device demonstrated 96% performance retention after being stored under humid conditions (50-60%) without encapsulation for ~100 h. This demonstrates a promising pathway toward the commercialization of large-scale manufacturable sputtered electrodes for the PSC solar module.

14 SOLAR ENERGY↗
DOE OSTI2022

Co-sputtering of lithium vanadium oxide thin films with variable lithium content to enable advanced solid-state batteries

Advanced solid-state batteries most likely will entail aggressive structures or architectures with constraints that typically limit processing temperatures. Considering this, we have identified the importance of providing lithiated electrode materials at a modest processing temperature. Here we describe a pathway to meet this by the development of a co-sputtering process using lithium oxide and vanadium oxide targets which enables the growth of lithiated vanadium oxide (LVO) thin films for application in solid-state batteries. Analysis of the structure and film composition of samples deposited with different co-sputtering rate ratios and post-annealing shows that multiple phases of Li x V 2 O 5 likely coexist (i.e. α-, ε-, δ-, and γ-V 2 O 5 ), and that this is unchanged after electrochemical cycling. The co-sputtering process can tune the lithium content up to a highly lithiated state of at least Li 2 V 2 O 5 . Electrochemical half-cells showed a significant amount of lithium available on the first charge (delithiation of LVO). LVO samples post-annealed at 300 °C showed typical redox peaks for Li x V 2 O 5 for both one and two lithium insertion reactions, which were highly reversible in most cases. A thin-film solid-state battery prototype using LVO as a cathode had 20% of the expected capacity, although the coulombic efficiency is near 100% at a fast rate (22C). As a result, this co-sputtering technique represents an opportunity for low temperature synthesis of pre-lithiated cathodes for thin film batteries, and introduces a broader methodology of depositing metal oxides with different alkali metal contents.

25 ENERGY STORAGE↗
DOE OSTI2019

Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin films

Zinc tin nitride (ZnSnN 2 ) is an emerging ternary nitride semiconductor studied for applications in solar cells, light-emitting diodes, and other optoelectronic devices. For all of these applications, the charge carrier mobility is an important property. Yet, the dominant electron scattering mechanisms in ZnSnN 2 are unclear, especially in the presence of oxygen that is often incorporated during thin film sputter deposition of this material. Moreover, there are no experimental reports on the concentration of defects in such polycrystalline sputtered zinc tin oxynitride Zn 1+x Sn 1-x N 2-2x O 2x (ZTNO) thin films. Here, we address both of these questions using temperature-dependent Hall effect measurements of sputtered ZTNO thin films as a function of Zn composition and O content. The measured temperature dependence of the mobility is fitted to scattering on ionized and neutral defects and to grain boundary scattering. The results suggest that ZTNO is a heavily compensated semiconductor, with a high density of neutral defects dominating the electron scattering processes. First principles theoretical calculations indicate that these neutral defects are likely to originate from the abundant Zn Sn -2O N complexes in the ZTNO material. Overall, these results establish the dominant electron scattering mechanisms in polycrystalline sputtered ZTNO and help position this material for future use in optoelectronic devices.

14 SOLAR ENERGY↗