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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6

The 55Fe X-ray Energy Response of Mercury Cadmium Telluride Near-Infrared Detector Arrays

A technique involving Fe-55 X-rays provides a straightforward method to measure the response of a detector. The detector's response can lead directly to a calculation of the conversion gain (e(-) ADU(-1) ), as well as aid detector design and performance studies. We calibrate the Fe-15 X-ray energy response and pair production energy of HgCdTe using 8 HST WFC3 1.7 micron flight grade detectors. The results show that each Ka X-ray generates 2273 +/- 137 electrons, which corresponds to a pair-production energy of 2.61 +/- 0.16 eV. The uncertainties are dominated by our knowledge of the conversion gain. In future studies, we plan to eliminate this uncertainty by directly measuring conversion gain at very low light levels.

Fox, Ori↗

Blocking contacts for N-type cadmium zinc telluride

A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen.

Stahle, Carl M.↗

Compact thermoelectric converter systems technology

A schematic of the developed tubular thermoelectric module is shown. It consists of alternate washers of n- and p-type lead telluride, separated by thin natural mica washers. Electrical continuity within the circuit is accomplished by cylindrical conductor rings located at the I.D. and O.D. of the lead telluride washers. The conductor rings are also separated by the same mica which separate the lead telluride washers. The result is a radially serpentine current path along the length of the module. The circuit is isolated from the structural claddings by thin sleeves of boron nitride. Circuit containment and heat transfer surfaces are provided by the inner and outer cladding, heat being transferred from a heat source at the inner clad, conducted radially outward through the lead telluride to the outer clad where the waste heat is removed by a heat rejection system.

Source record↗

Further improvements in program to calculate electronic properties of narrow band gap materials

The tasks that we have accomplished are discussed. An extra task was a calculation comparing electron mobilities in Mercury Manganese Telluride with Mercury Cadmium Telluride given in 1H. We then list the reports and papers produced and follow that with either abstracts or the papers themselves. In one key paper we obtain good results between experiment and theory in Mercury Zinc Telluride and also find it typically has mobilities competitive with Mercury Cadmium Telluride. In the Appendix we have a relatively complete set of references.

Patterson, James D.↗

Thermoelectric elements diffusion-bonded to tungsten electrodes

Solid-state diffusion process bonds lead telluride and lead telluride-tin telluride thermoelectric elements to tungsten electrodes. The resulting bond is nonmagnetic and has high strength and low electrical and thermal resistance. This method is also used with tantalum electrodes.

Source record↗

Laser space communication experiment: Modulator technology

Results are presented of a contractual program to develop the modulator technology necessary for a 10.6 micron laser communication system using cadmium telluride as the modulator material. The program consisted of the following tasks: (1) The growth of cadmium telluride crystals of sufficient size and purity and with the necessary optical properties for use as laser modulator rods. (2) Develop a low loss antireflection coating for the cadmium telluride rods. (3) Design and build a modulator capable of 300 MHz modulation. (4) Develop a modulator driver capable of a data rate of 300 MBits/sec, 12 W rms output power, and 40 percent efficiency. (5) Assemble and test the modulator system. All design goals were met and the system was built and tested.

Goodwin, F. E.↗

New PbSnTe heterojunction laser diode structures with improved performance

Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.

Fonstad, C. G.↗

Solutal diffusion coefficient for liquid PbTe-SnTe

The solutal diffusion coefficient has been determined for liquid lead telluride-tin telluride using a modified shear cell technique. Postdiffusion concentration profiles are presented for several diffusion couples. The best analytical curve fit to the data gives a composition-dependent diffusion coefficient of (/3/7/ to the C power) x 0.00014 sq cm/sec, where C is the PbTe concentration. In addition, data are presented to show the importance of solutal convection in the lead-tin-telluride system.

Clark, I. O.↗

Composite Semiconductor Substrates

Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.

Nouhi, Akbar↗

Crystal Growth Furnace - An overview of the system configuration and planned experiments on the First United States Microgravity Laboratory mission

The Crystal Growth Furnace (CGF) system configuration for the First United States Microgravity Laboratory (USML-1) mission is reviewed, and the planned on-orbit experiments are briefly described. The CGF is configured to accommodate four scientific experiments involving crystal growth which are based on the classical Bridgman method and CVT method, including vapor transport crystal growth of mercury cadmium telluride; crystal growth of mercury zinc telluride by directional solidification; seeded Bridgman growth of zinc-doped cadmium telluride; and Bridgman growth of selenium-doped gallium arsenide.

Srinivas, R.↗

Growth of Solid Solution Single Crystals

The solidification of a solid solution semiconductor, having a wide separation between liquidus and serious has been extensively studied in ground based, high magnetic field and Spacelab experiments. Two alloys of mercury cadmium telluride have been studied; mercury cadmium telluride with 80.0 mole percent of HgTe and 84.8 mole percent respectively. These alloys are extremely difficult to grow by directional solidification on earth due to high solutal and thermal density differences that give rise to fluid flow and consequent loss of interface shape and composition. Diffusion controlled growth is therefore impossible to achieve in conventional directional solidification. The ground based experiments consisted of growing crystals in several different configurations of heat pipe furnaces, NASA's Advanced Automated Directional Solidification Furnace (AADSF), and a similar furnace incorporated in a superconducting magnet capable of operating at up to 5T. The first microgravity experiment took place during the flight of STS-62 in March 1994, with the AADSF installed on the second United States Microgravity Payload (USMP-2). The alloy was solidified at 3/4 inch per day over a 9 day period, and for the first time a detailed evaluation was performed of residual acceleration effects. The second flight experiment took place in the fourth United States Microgravity Payload Mission (USMP-4) in November 1997. Due to contamination of the furnace system by a previously processed sample, the sample was not received until May 1998, and the preliminary analysis shows that the conditions prevailing during the experiment were quite different from the requirements requested prior to the mission. Early results are indicating that the sample may not accomplish the desired objectives. As with the USMP-2 mission, the results of the ground based experiments were compared with the crystal grown in orbit under microgravity conditions. On the earth, it has been demonstrated that the application of the magnetic field leads to a significant reduction in fluid flow, with improved homogeneity of composition. The field strength required to suppress flow increases with diameter of the material. The 8 mm diameter sample used here was less than the upper diameter limit for a ST magnet. The configuration for USMP-4 was changed so that the material was seeded and other processing techniques were also modified. It was decided to examine the effects of a strong magnetic field under the modified configuration and parameters. A further change from USMP-2 was that a different composition of material was grown, namely with 0.152 mole fraction of cadmium telluride rather than the 0.200 of the USMP-2 experiment. The objective was to grow highly homogeneous, low defect density material of a composition at which the conduction band and the valence band of the material impinge against each other. As indicated, the furnace was contaminated during the mission. As a result of solid debris remaining in the furnace bore, the cartridge in this experiment, denoted as SL1-417, was significantly bent during the insertion phase. During translation the cartridge scraped against the plate which isolates the hot and cold zones of the furnace. Thermocouples indicated that a thermal assymetry resulted. The scraping in the slow translation or crystal growth part of the processing was not smooth and it is probable that the jitter was sufficient to give rise to convection in the melt. Early measurements of composition from the surface of the sample have shown that the composition varies in an oscillatory manner.

Lehoczky, Sandor L.↗

Ampoule failure sensor development for semiconductor crystal growth experiments

Currently there are no devices to detect an ampoule failure in semiconductor crystal growth experiments. If an ampoule fails, it will go undetected until the containing cartridge is breached due to chemical degradation. The experiment will then be terminated resulting in a failed experiment and a loss of data. The objective of this research was to develop a reliable failure sensor that would detect a specific liquid or vapor material before the metallic cartridge is degraded and the processing furnace contaminated. The sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. Upon ampoule failure, the sensor is exposed to the vapor or liquid semiconductor and the chemical reaction causes a resistance change in the sensor material. The sensor shows a step change in resistance on the order of megohms when exposed to mercury zinc telluride (HgZnTe), mercury cadmium telluride (HgCdTe), or gallium arsenide (GaAs). This ampoule failure sensor is being tested for possible use on the second United States Microgravity Mission (USML-2) and is the subject of a NASA patent application.

CHEMICAL FUSE↗