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Broadband electronically tunable sources in the terahertz range are a critical technology for enabling space-borne as well as ground-based applications. By power-combining MMIC amplifier and frequency tripler chips, we have recently demonstrated >1 mW of output power at 900 GHz. This source provides a stepping stone to enable sources in the 2-3 THz range than can sufficiently pump multi-pixel imaging arrays.
We prevent the development of a low noise SIS mixer for the 1.1-1.25 THz heterodyne receiver of FIRST space radiotelescope.
Planar Schottky diode technology has been utilized to fabricate high-power broad-band monolithic multiplier circuits that can produce appreciable power well into the THz range. The chip fabrication technology that has been developed allows for robust circuit designs that can be easily packaged in conventional waveguide blocks. An overview of the capability of GaAs based Schottky diode multipliers will be presented.
A number of on-going astrophysical and atmospheric programs are aimed at spectroscopic exploration of the terahertz (THz) frequency range. There is an urgent need here for low-noise mixers for heterodyne receivers.
The process for fabricating and utilizing the threedimensional Si stack receiver front-end is described in this paper. The capability to have exact dimensionality becomes essential as frequency scales due to the complexity arising in assembly and finer tolerances. Total process yields can be improved through Si fabrication by verifying achievement of specified tolerances lithographically and compatibility to rapid process changes and design fine-tuning. The integrated Si platform with the mounted device is shown in Figure 1. Signal I/O and alignment modalities enable lownoise measurements. Silicon micromachining provides the necessary accuracy for integration at the several THz regime. Particularly, processing and etch recipes have demonstrated smooth surfaces of < 1 μm surface roughness. In consideration is pre-compensating for minute offsets, matching mechanical strain on all interfaces, and including passive alignment verification in the design. As compared to metal blocks, computer numerical controlled (CNC) milling can produce slight burrs in the interfaces resulting in misalignment and resultant strain between two pieces of components. Furthermore, Si integration can make possible arrays of pixel transceivers through compact subsystems for the purpose of measuring multiple lines of spectral content simultaneously in space.
The Herschel Space Observatory (HSO), an ESA cornerstone mission with NASA contribution, will enable a comprehensive study of the galactic as well as the extra galactic universe. At the heart of this exploration are ultra sensitive coherent detectors that can allow for high-resolution spectroscopy. Successful operation of these receivers is predicated on providing a sufficiently powerful local oscillator (LO) source. Historically, a versatile space qualified LO source for frequencies beyond 500 GHz has been difficult if not impossible. This paper will focus on the effort under way to develop, build, characterize and qualify a LO chain to 1200 GHz (Band 5 on HSO) that is based on planar GaAs diodes mounted in waveguide circuits. State-of-the-art performance has been obtained from a three-stage ( x2 x 2 x 3 ) multiplier chain that can provide a peak output power of 120 uW (1178 GHz) at room temperature and a peak output power of 190 uW at 1183 GHz when cooled to 113 K. Implementation of this LO source for the Heterodyne Instrument for Far Infrared (HIFI) on HSO will be discussed in detail.
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In this presentation they report design and fabrication details of 1200 GHz nanoklystron circuits and ongoing efforts to produce low voltage cold cathodes from carbon nanotube (CNT) emitters.
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The description and performance of an 850 to 2550 GHz waveguide tripler is presented.
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The OH radical is an important player in known ozone depletion cycles; however, due to its location in the atmosphere, it must be studied from either a balloon or spaceborne platform.
We have developed and tesed a number of fixed-tuned GaAs Schottky diode frequency doubler and tripler designs covering over 50 percent of the 100 - 2000 GHz band, with best measured 120 K peak efficiencies ranging from 39 percent for 190 GHz doubler to 0.94 percent for a 1800 GHz tripler.
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