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At least 109 records · Page 6

Scattering of phonons by edge dislocation and thermal conductivity of nanocrystalline silicon

For this work, the temperature dependent thermal conductivity of nanocrystalline silicon with the grain size of 500 nm, 144 nm, and 76 nm, was calculated based on the intrinsic phonon properties using a first-principles-based method and recent analytical theory of phonon-dislocation scattering. The results demonstrate, in the nanocrystalline silicon, that the low temperature (T) limit of thermal conductivity is directly proportional to T 2 instead of the conventional Casimir limit of T 3 . Calculated frequency-dependent scattering rates also indicate regimes of dominant scattering mechanisms: frequency-independent boundary scattering dominates in the very low phonon frequency regime of less than 0.6 THz; frequency-dependent boundary scattering dominates in the intermediate phonon frequency regime between 0.6 and 6 THz; and Umklapp scattering dominates in the high phonon frequency regime beyond 6 THz. The thermal conductivity is linear proportional to nanograin size in the region of d < 100nm and it shows independence at d > 1μm. This work proves the importance of dislocation-phonon scattering to thermal conductivity when the size of nanograins is small or at low temperature.

36 MATERIALS SCIENCE↗

Analysis of THz generation by multicolor laser pulses with various frequency ratios

Here, terahertz (THz) generation in a gas medium is simulated by quantum calculations with multicolor intense laser pulses of various frequency ratios. By correlating THz radiation with the above-threshold-ionization photoelectron spectrum, we confirm that our previously proposed free-free transition model for the generation of THz radiation is also applicable to multicolor pulses. THz photon emissions can proceed through transitions between continuous states with similar energies that have opposite parities. This mechanism predicts that THz waves can be efficiently generated at special two-color laser frequency ratios when the multiphoton mixing condition is satisfied. Applying this model to multicolor fields (sawtooth wave shape), we provide a quantum-mechanical interpretation for the reason for THz radiation enhancement. A scheme combining multiple lasers to raise THz radiation satisfying multiphoton mixing conditions is also proposed.

74 ATOMIC AND MOLECULAR PHYSICS↗

Thin-film lithium niobate electro-optic terahertz wave detector

Here, the design, fabrication, and validation of a thin-film lithium niobate on insulator (LNOI) electro-optic (EO) time-domain terahertz (THz) wave detector is reported. LNOI offers unprecedented properties for the EO detection of freely propagating THz wave radiation pulses and transient electric fields because of the large EO coefficient of the material, engineering of the velocity matching of the THz wave and optical wave, and much reduced detector size. The proof-of-concept device is realized using thin-film lithium niobate optical waveguides forming a Mach–Zehnder interferometer with interferometer arms electrically poled in opposite directions. THz waves are coupled effectively to the fully dielectric device from free space without using antennas or plasmonics. The detection of THz waves with frequencies up to 800 GHz is successfully demonstrated. The detector allows for the detection of THz frequency electric fields up to 4.6 MV/m. The observed frequency response of the device agrees well with theoretical predictions.

47 OTHER INSTRUMENTATION↗

Low-Loss Waveguides for Terahertz Frequencies

Hollow-core, periodic bandgap (HCPBG) flexible waveguides have been proposed as a means of low-loss transmission of electromagnetic signals in the frequency range from about 300 GHz to 30 THz. This frequency range has been called the "terahertz gap" because it has been little utilized: Heretofore, there has been no way of low-loss guiding of terahertz beams other than by use of fixed-path optical beam guides with lenses and mirrors or multimode waveguides that cannot maintain mode purity around bends or modest discontinuities.

Siegel, Peter↗

Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

bolometer↗

Modification of terahertz emission spectrum using microfabricated spintronic emitters

Terahertz (THz) radiation with sub-millimeter wavelength falls in the gap between optical and radio frequencies. Conventional THz emitters do not intertwine with spin degrees of freedom. However, it was recently shown that broadband THz radiation can be efficiently created also by exploiting spin-based effects on ultrafast time scales. Here, we demonstrate the generation and control of THz radiation from microstructured spintronic THz emitters based on the inverse spin-Hall effect. Using time-domain THz spectroscopy, we compare the THz spectra of different stripe patterns made of Fe/Pt bilayers with a spectrum obtained from an extended Fe/Pt bilayer film. It is found that the THz spectrum can be altered by a proper choice of the microstructure dimensions. The experimentally observed spectra are interpreted in terms of a simplified multi-slit interference model, which captures the main experimental features. Our results pave the way for an efficient control of THz light emitted from magnetic heterostructures. This is a crucial step forward for the design and realization of directional THz sources.

Wu, Weipeng↗

On-Chip Power-Combining for High-Power Schottky Diode-Based Frequency Multipliers

A 1.6-THz power-combined Schottky frequency tripler was designed to handle approximately 30 mW input power. The design of Schottky-based triplers at this frequency range is mainly constrained by the shrinkage of the waveguide dimensions with frequency and the minimum diode mesa sizes, which limits the maximum number of diodes that can be placed on the chip to no more than two. Hence, multiple-chip power-combined schemes become necessary to increase the power-handling capabilities of high-frequency multipliers. The design presented here overcomes difficulties by performing the power-combining directly on-chip. Four E-probes are located at a single input waveguide in order to equally pump four multiplying structures (featuring two diodes each). The produced output power is then recombined at the output using the same concept.

Chattopadhyay, Goutam↗

Monte Carlo Simulation of THz Multipliers

Schottky Barrier diode frequency multipliers are critical components in submillimeter and Thz space based earth observation systems. As the operating frequency of these multipliers has increased, the agreement between design predictions and experimental results has become poorer. The multiplier design is usually based on a nonlinear model using a form of harmonic balance and a model for the Schottky barrier diode. Conventional voltage dependent lumped element models do a poor job of predicting THz frequency performance. This paper will describe a large signal Monte Carlo simulation of Schottky barrier multipliers. The simulation is a time dependent particle field Monte Carlo simulation with ohmic and Schottky barrier boundary conditions included that has been combined with a fixed point solution for the nonlinear circuit interaction. The results in the paper will point out some important time constants in varactor operation and will describe the effects of current saturation and nonlinear resistances on multiplier operation.

East, J.↗

Terahertz Second-Harmonic Generation from Lightwave Acceleration of Symmetry-Breaking Nonlinear Supercurrents

We report terahertz (THz) light-induced second harmonic generation, in superconductors with inversion symmetry that forbid even-order nonlinearities. The THz second harmonic emission vanishes above the superconductor critical temperature and arises from precession of twisted Anderson pseudospins at a multicycle, THz driving frequency that is not allowed by equilibrium symmetry. We explain the microscopic physics by a dynamical symmetry breaking principle at sub-THz-cycle by using quantum kinetic modeling of the interplay between strong THz-lightwave nonlinearity and pulse propagation. In this work, the resulting nonzero integrated pulse area inside the superconductor leads to light-induced nonlinear supercurrents due to subcycle Cooper pair acceleration, in contrast to dc-biased superconductors, which can be controlled by the band structure and THz driving field below the superconducting gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Frequency and Phase-lock Control of a 3 THz Quantum Cascade Laser

We have locked the frequency of a 3 THz quantum cascade laser (QCL) to that of a far-infrared gas laser with a tunable microwave offset frequency. The locked QCL line shape is essentially Gaussian, with linewidths of 65 and 141 kHz at the -3 and -10 dB levels, respectively. The lock condition can be maintained indefinitely, without requiring temperature or bias current regulation of the QCL other than that provided by the lock error signal. The result demonstrates that a terahertz QCL can be frequency controlled with l-part-in-lO(exp 8) accuracy, which is a factor of 100 better than that needed for a local oscillator in a heterodyne receiver for atmospheric and astronomic spectroscopy.

Betz, A. L.↗

Chalcogenide phase-change material advances programmable terahertz metamaterials: a non-volatile perspective for reconfigurable intelligent surfaces

Terahertz (THz) waves have gained considerable attention in the rising 6G communication due to their large bandwidth. However, the cost and power consumption become the major constraints for the commercialization of 6G THz systems as the frequency increases. Reconfigurable intelligent surface (RIS) comprising active metasurfaces and digital controllers has been proposed for beamforming in the 6G multiple-input-multiple-output systems, showing good potential to suppress the system size, weight, and power consumption (SWaP). Currently, their controlling diodes can hardly work up to THz frequencies. Therefore, several active stimuli have been investigated as alternatives. Among them, chalcogenide phase-change material Ge 2 Sb 2 Te 5 (GST) addresses large modulation depth, picosecond switching speed, and non-volatile properties. Notably, the non-volatile GST may enable RIS systems with memory and low control power. This work briefly reviews the advances of GST-tuned THz metamaterials (MTMs), discusses the current obstacles to overcome, and gives a perspective of GST applications in the rising 6G communications.

6G↗

Observation of cupratelike nonlinear terahertz responses in superconducting infinite-layer nickelates via two-dimensional coherent spectroscopy

The 𝑑-wave pairing symmetry in newly discovered infinite-layer nickelates remains highly debated compared to the widely accepted 𝑑-wave superconductivity in cuprates, despite recent intense efforts using equilibrium optical and electrical transport measurements. A complementary approach involves characterizing THz coherent nonlinear responses, which is currently lacking but needed, as it would offer new insights into the superconducting gap structure by characterizing Higgs modes and quasiparticle excitations. Here, in this study, we report THz 2D coherent spectroscopy (THz-2DCS) responses from the superconducting state in an infinite-layer nickelate. The 2D spectra clearly demonstrate the absence of hallmark signatures of 𝑠-wave pairing symmetry, such as resonant 2⁢Δ peaks at superconducting gaps. Instead, we observe gapless 2D spectra in the nickelate, centered around the THz driving frequency, with no noticeable shift as the temperature increases. These findings closely resemble the nodal superconductivity behavior expected in cuprates. Together with our simulations, these findings suggest that 2⁢Δ signatures in the 2D spectra of 𝑑-wave gap structures can be obscured by significant nodal quasiparticle excitations at arbitrarily low energies. This contrasts with the long-lived Higgs modes, observed as distinct 2⁢Δ peaks in a controlled THz-2DCS experiment on niobium, a representative example of dirty-limit s-wave superconductors. Our results have implications for understanding the unconventional superconductivity in nickelates and highlight the need to explore their coherent nonlinear dynamics.

Pairing mechanisms↗

Acoustic cavities in 2D heterostructures

Two-dimensional (2D) materials offer unique opportunities in engineering the ultrafast spatiotemporal response of composite nanomechanical structures. In this work, we report on high frequency, high quality factor ( Q ) 2D acoustic cavities operating in the 50–600 GHz frequency ( f ) range with f × Q up to 1 × 10 14 . Monolayer steps and material interfaces expand cavity functionality, as demonstrated by building adjacent cavities that are isolated or strongly-coupled, as well as a frequency comb generator in MoS 2 /h-BN systems. Energy dissipation measurements in 2D cavities are compared with attenuation derived from phonon-phonon scattering rates calculated using a fully microscopic ab initio approach. Phonon lifetime calculations extended to low frequencies (<1 THz) and combined with sound propagation analysis in ultrathin plates provide a framework for designing acoustic cavities that approach their fundamental performance limit. These results provide a pathway for developing platforms employing phonon-based signal processing and for exploring the quantum nature of phonons.

36 MATERIALS SCIENCE↗

Piezoelectric Field Enhanced Second-Order Nonlinear Optical Susceptibilities in Wurtzite GaN/AlGaN Quantum Wells

Second-order nonlinear optical processes including second-harmonic generation, optical rectification, and difference-frequency generation associated with intersubband transitions in wurtzite GaN/AlGaN quantum well (QW) are investigated theoretically. Taking into account the strain-induced piezoelectric (PZ) effects, we solve the electronic structure of the QW from coupled effective-mass Schrodinger equation and Poisson equation including the exchange-correlation effect under the local-density approximation. We show that the large PZ field in the QW breaks the symmetry of the confinement potential profile and leads to large second-order susceptibilities. We also show that the interband optical pump-induced electron-hole plasma results in an enhancement in the maximum value of the nonlinear coefficients and a redshift of the peak position in the nonlinear optical spectrum. By use of the difference-frequency generation, THz radiation can be generated from a GaN/Al(0.75)Ga(0.25)N with a pump laser of 1.55 micron.

Liu, Ansheng↗