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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology

Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.

Lauenstein, Jean-Marie↗
NASA NTRS2020

Recent Radiation Test Results on a 22FDX Test Vehicle

Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.

total ionizing dose↗
NASA NTRS2020

Recent Radiation Test Results on a 22FDX Test Vehicle

Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.

total ionizing dose↗
NASA NTRS2009

Commercial Sensor Survey Fiscal Year 2009 master compendium radiation test report

The NASA Electronic Parts and Packaging (NEPP) Program Sensor Technology Commercial Sensor Survey task is geared toward benefiting future NASA space missions with low-cost, short-duty-cycle, visible-wavelength imaging needs. Such applications could include imaging for educational outreach purposes or short surveys of spacecraft, planetary, or lunar surfaces. Under the task, inexpensive, low-power, commercial grade CMOS sensors were surveyed in fiscal year 2007 (FY07), and three sensors were selected and tested for total ionizing dose (TID) and displacement damage dose (DDD) tolerance in fiscal year 2008 (FY08). The selected sensors had to meet selection criteria chosen to support small, low-mass cameras that produce good resolution color images. The commercial CMOS sensors tested under the task in FY08 showed very promising response to typical outreach and survey camera TID and DDD levels. In fiscal year 2009 (FY09), the survey was broadened to include two additional, similar sensor products. This compendium provides results for all radiation testing performed on the Micron and OmniVision sensors that were selected for radiation tolerance testing in FY08 and FY09.

Thorbourn, Dennis O.↗
NASA NTRS2018

Radiation Performance of Memory Technologies for Space Applications

MRAM and DRAM memory technologies identified for possible radiation hardening were investigated for memory-array- and controller-level radiation sensitivity. TID and SEE performance of memory arrays and associated cells is good, but with some questions about viability of hardening of problematic control circuitry. Control-circuitry-related SEE problems are highlighted. TID data are focused on memory arrays only.

Some, Raphael↗
NASA NTRSDate not supplied

Key Observations and Discoveries from the Vector Electric Field Investigation on the C/NOFS Satellite

Launched in 2008 and operating for 7.5 years, the Air Force Communication /Navigation Outage Forecasting System (C/NOFS) satellite included the Vector Electric Field Investigation (VEFI) designed and built at NASA’s Goddard Space Flight Center. VEFI successfully met its objectives: 1) investigate the role of ambient electric fields in initiating nighttime density depletions and turbulence; 2) determine the quasi-DC electric fields associated with abrupt density depletions, and 3) quantify the spectrum of the irregularities associated with density depletions, providing many key observations and discoveries including: -- Global (low latitude) vector DC electric fields at 16 s/sec revealing variations with local time, longitude, and season between extremely low and moderate solar activity-- Reversed zonal E x B drifts below the F-region ledge at sunset and simultaneous observations of large scale Kelvin-Helmholtz instabilities as seeds of spread-F -- Large expanses of quasi-coherent kilometer-scale vector wave observations (electric field and density) below 450 km and their discovery as a source of scintillations using the C/NOFS GPS -- Reversed zonal DC electric fields and simultaneous observations of afternoon counter electrojet-- Enhanced zonal DC electric fields at sunrise and full vector plasma flow continuity at the terminator-- Vector electric field and density irregularities extending to meter-scales within equatorial plasma depletions -- Intense electric field structure within the equatorial ionosphere at night in the absence of density depletions -- First observations of the westward equatorial electrojet in post-midnight ionosphere and possible association with downward meridional drifts-- Spaceborne Dst observations and implications for ring current asymmetries-- Vector electric and magnetic field Poynting flux within depletions and TIDs-- Measurements of ionospheric reflectance and Alfvenic waves associated with TIDs-- Observations of Alfven resonators -- ULF magnetic field structure within the nightime equatorial ionosphere-- Discovery of Schumman resonances in space and implications of ELF radiowave propagation-- Vector observations of 50-60 Hz powerline radiation without harmonics-- Ion cyclotron resonance absorption lines associated with ELF hiss and the identification of ambient ions-- Parallel electric fields associated with lower hybrid waves driven by thunderstorm lightning-related sferics-- Discovery of Z-mode radiation in the equatorial ionosphere including its associated with density depletions-- Optical lightning detector waveforms and electric field sferics observed up to altitudes of 800 km

Robert F Pfaff↗
NASA NTRS2017

Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUB

Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

total ionizing dose (TID)↗
NASA NTRS2017

Current Status and Future Challenges in Risk-Based Radiation Engineering

This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.

Total Ionizing Dose (TID)↗
NASA NTRS2018

Room Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology

The purpose of this testing was to obtain total ionizing dose (TID) information about custom-built research prototype silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) capable of prolonged operation in extremely high-temperature (500 degrees Centigrade) environments. The circuits included ring oscillators and operational amplifiers as well as individual n-channel JFETs. This technology is being considered for use in high temperature, high pressure applications such as Long-Lives Surface System Explorer (LLISSE). These devices were developed at NASA Glenn Research Center (GRC). Testing occurred from July 9th-July 13th, 2018.

Radiation↗
NASA NTRS2020

U309 N-Channel Silicon Junction Field Effect Transistor Total Ionizing Dose Characterization Report

The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.

Total Ionizing Dose (TID)↗
NASA NTRS2018

Goddard Modular SmallSat Architecture (GMSA) Adapter Board H-Bridge MOSEFT ICs Total Ionizing Dose Characterization Report

The purpose of this testing was to obtain total ionizing dose (TID) information about commercial off-the-shelf (COTS) n-channel and p-channel MOFETs that are being considered for use on the Goddard Modular SmallSat Architecture (GMSA) Adapter board in an H-Bridge circuit to drive magnetorquers. Testing took place at NASA Goddard Space Flight Center’s (GSFC) Radiation Effects Facility using the gamma source. Testing occurred from July 31st – August 1st, 2018.

total ionizing dose (TID)↗