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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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107 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Multigrid solution of compressible turbulent flow on unstructured meshes using a two-equation model

The steady state solution of the system of equations consisting of the full Navier-Stokes equations and two turbulence equations has been obtained using a multigrid strategy of unstructured meshes. The flow equations and turbulence equations are solved in a loosely coupled manner. The flow equations are advanced in time using a multistage Runge-Kutta time-stepping scheme with a stability-bound local time step, while turbulence equations are advanced in a point-implicit scheme with a time step which guarantees stability and positivity. Low-Reynolds-number modifications to the original two-equation model are incorporated in a manner which results in well-behaved equations for arbitrarily small wall distances. A variety of aerodynamic flows are solved, initializing all quantities with uniform freestream values. Rapid and uniform convergence rates for the flow and turbulence equations are observed.

MULTIGRID SOLUTION↗
NASA NTRS1994

Novel Coplanar Stripline to Slotline Transition on High Resistivity Silicon

A novel coplanar stripline (CPS) to slotline transition has been fabricated and characterized on a high resistivity silicon wafer. The CPS and the slotline are on opposite sides of the wafer and are coupled electromagnetically. The coupling takes place at the location were the CPS is terminated in a right angles. The measured average insertion loss and return loss per transition are better than 1.5 and 10 dB, respectively, with a bandwidth greater than 30% at 9.5 GHz.

TRT-EXPERIMENTAL↗
NASA NTRS1993

Direct time integration of Maxwell's equations in two-dimensional dielectric waveguides for propagation and scattering of femtosecond electromagnetic solitons

Solution of 2D vector nonlinear Maxwell's equations is described for material media with linear and nonlinear instantaneous and Lorentz dispersion effects in the electric polarization. Finite difference time domain method is used in the analysis. The method discussed here achieves robustness by enforcing vector-field boundary conditions at all interfaces of dissimilar media.

VECTOR FIELDS↗
NASA NTRS1993

Response of two-phase droplets to intense electromagnetic radiation

The behavior of two-phase droplets subjected to high intensity radiation pulses is studied. Droplets are highly absorbing solids in weakly absorbing liquid medium. The objective of the study was to define heating thresholds required for causing explosive boiling and secondary atomization of the fuel droplet. The results point to mechanisms for energy storage and transport in two-phase systems.

TWO PHASE DROPLETS↗
NASA NTRS1995

On the modeling and optimization of Schottky varactor frequency multipliers at submillimeter wavelengths

Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. A millimeter wavelengths the equivalent circuits is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies.

TRT-THEORETICAL↗
NASA NTRS1995

155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMTs (high-electron mobility transistors). These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 micron. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.

TRT-EXPERIMENTAL↗
NASA NTRS1995

Wideband fixed-tuned SIS receiver for 200-GHz operation

We report on the design and development of a heterodyne receiver, designed to cover the frequency range 176-256 GHz. This receiver incorporates a niobium superconductor-insulator-superconductor (SIS) tunnel junction mixer, which, chiefly for reasons of reliability and ease of operation, is a fixed-tuned waveguide design. On-chip tuning is provided to resonate out the junction's geometric capacitance and produce a good match to the waveguide circuit. Laboratory measurements on the first test receiver indicate that the required input bandwidth (about 40%) is achieved with an average receiver noise temperature of below 50 K. Mixer conversion gain is observed at some frequencies, and the lowest measured receiver noise is less than 30 K. Furthermore, the SIS mixer used in this receiver is of simple construction, is easy to assemble and is therefore a good candidate for duplication.

RECEIVER NOISE TEMPERATURE↗
NASA NTRS1995

Conversion gain and noise of niobium superconducting hot-electron-mixers

A study has been done of microwave mixing at 20 GHz using the nonlinear (power dependent) resistance of thin niobium strips in the resistive state. Our experiments give evidence that electron-heating is the main cause of the nonlinear phenomenon. Also a detailed phenomenological theory for the determination of conversion properties is presented. This theory is capable of predicting the frequency-conversion loss rather accurately for arbitrary bias by examining the I-V-characteristic. Knowing the electron temperature relaxation time, and using parameters derived from the I-V-characteristic also allows us to predict the -3 dB IF bandwidth. Experimental results are in excellent agreement with the theoretical predictions. The requirements on the mode of operation and on the film parameters for minimizing the conversion loss (and even achieving conversion gain) are discussed in some detail. Our measurements demonstrate an intrinsic conversion loss as low as 1 dB. The maximum IF frequency defined for -3 dB drop in conversion gain, is about 80 MHz. Noise measurements indicate a device output noise temperature of about 50 K and SSB mixer noise temperature below 250 K. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.

CONVERSION GAIN↗
NASA NTRS1995

Integrated back to back barrier-N-N(+) varactor diode tripler using a split-waveguide block

The back-to-back barrier-N-N(+) (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance, freedom from external bias and suitability to planarization make it an ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220-GHz waveguide tripler using, for the first time, a planar GaAs bbBNN device integrated on a quartz microstrip circuit is presented. A new split-waveguide block design has been employed to provide the proper embedding impedances to the device at the input and third harmonic output frequencies. A flange-to-flange tripling efficiency of 7% has been obtained at 220 GHz with an output power in excess of 700 mu W. This is believed to be the highest conversion efficiency yet reported for a tripler with an integrated device at this frequency. Theoretical calculations indicate that substantial improvement is possible with modest changes to the device and circuit parameters.

QUARTZ MICROSTRIP CIRCUITS↗
NASA NTRS1995

Simulation of 100-300 GHz solid-state harmonic sources

Accurate and efficient simulations of the large-signal time-dependent characteristics of second-harmonic Transferred Electron Oscillators (TEO's) and Heterostructure Barrier Varactor (HBV) frequency triplers have been obtained. This is accomplished by using a novel and efficient harmonic-balance circuit analysis technique which facilitates the integration of physics-based hydrodynamic device simulators. The integrated hydrodynamic device/harmonic-balance circuit simulators allow TEO and HBV circuits to be co-designed from both a device and a circuit point of view. Comparisons have been made with published experimental data for both TEO's and HBV's. For TEO's, excellent correlation has been obtained at 140 GHz and 188 GHz in second-harmonic operation. Excellent correlation has also been obtained for HBV frequency triplers operating near 200 GHz. For HBV's, both a lumped quasi-static equivalent circuit model and the hydrodynamic device simulator have been linked to the harmonic-balance circuit simulator. This comparison illustrates the importance of representing active devices with physics-based numerical device models rather than analytical device models.

NONLINEAR CIRCUITS↗
NASA NTRS1995

Analysis of a 170-GHz frequency doubler with an array of planar diodes

Analysis of a planar diode multiplier from 85-170 GHz is described. The doubler uses a waveguide mount with two series pairs of diodes in a balanced structure. Because of the difficulties in conventional scale model measurements, numerical electromagnetic simulation based on the finite element method was chosen for the analysis, using a commercial program. To optimize the diode design, the de-embedded diode terminal impedance was studied, as well as the power balance between the diodes. The analysis showed that the matching of the diode impedance to that of the waveguide is quite sensitive to the diode substrate thickness. Thicknesses from 25-100 micron in GaAs were studied as well as 100-micron-thick quartz. The accuracy of the theoretical analysis was verified by careful measurements using a slotted line to determine the diode terminal impedance under large signal pump, for frequencies between 80 and 90 GHz. Good agreement between the measured and simulated diode terminal impedance was observed, although full agreement requires the addition of an empirical loss term. Several options are considered for the source of this loss.

DIODE MULTIPLIER↗
NASA NTRS1995

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

SUBHARMONIC EXCITATION↗
NASA NTRS1995

Measurements of noise in Josephson-effect mixers

We present new heterodyne receiver results obtained at 100 GHz using resistively-shunted Nb and NbN tunnel junctions. In addition, we have carried out accurate measurements of the available noise power of these devices at the L-band (1.5 GHz) IF (infrasonic) frequency. Both the heterodyne and the output noise measurements show that the noise of these devices can be a factor of five or more higher than that predicted by the simple current-biased RSJ model. The noise approaches the appropriate thermal or thermal and shot noise limits for bias voltages where the nonlinearity is not strong (i.e., V greater than I(sub C)R(sub N)), but as expected from the RSJ model, can be significantly higher at the low voltages where the mixers are typically biased. The bias voltage dependence of the noise shows structure which is associated with resonances in the RF embedding circuit. Surprisingly, we find that changes in the high-frequency (100 GHz) impedance presented to the junction can dramatically affect the magnitude and voltage dependence of the low-frequency (1.5 GHz) noise. This emphasizes the necessity of very closely matching the junction to free space over a wide frequency range.

NOISE MEASUREMENT↗
NASA NTRS1995

190-GHz radiation from a quasioptical Josephson junction array

At 190 GHz, 0.36 micro W has been detected from an 11 x 58 array of niobium Josephson junctions. The power is radiated directly into free space above the surface of the two-dimensional array of junctions. Detection is made by a commercial bolometer outside the array cryostat. The junctions in the array are closely spaced in the y-dimension, but spaced by more than one-half wavelength in the x-direction. This asymmetry results in mutual phase-locking between adjacent junctions suitable for the production of y-polarized radiation. The resonance and asymmetry also result in a reasonable impedance match between the Josephson junctions and the free-space radiation mode.

ARRAY CRYOSTAT↗
NASA NTRS1995

Low-cost 20-22 GHz MIC active receiver/radiometer

A microwave integrated circuit active receiver is built and tested at 19-25 GHz. The receiver consists of a planar CPW-fed double folded-slot antenna coupled to a six-stage MESFET (metal semiconductor field effect transistors) amplifier and followed by a planar Schottky-diode detector. The folded-slot antenna on a GaAs half-space results in a wide frequency bandwidth suitable for MMIC amplifiers. The measured system performance show a video responsivity close to 1 GV/W at 20 GHz with a 3-dB bandwidth of 1500 MHz. A novel method which uses the planar video detector after the amplifier stages as an RF (radio frequency) mixer is used to measure the noise-figure of the direct detection radiometer. The system noise figure is 4.8 dB at 22 GHz. The radiometer sensitivity to a hot/cold load is 3.8 mu V/K. The measured antenna patterns show a 90% Gaussicity at 20-22 GHz. The active MIC receiver can be integrated monolithically for low-cost applications and is well suited for millimeter-wave linear imaging arrays.

PLANAR SCHOTTKY DIODE DETECTOR↗
NASA NTRS1994

Using parallel banded linear system solvers in generalized eigenvalue problems

Subspace iteration is a reliable and cost effective method for solving positive definite banded symmetric generalized eigenproblems, especially in the case of large scale problems. This paper discusses an algorithm that makes use of two parallel banded solvers in subspace iteration. A shift is introduced to decompose the banded linear systems into relatively independent subsystems and to accelerate the iterations. With this shift, an eigenproblem is mapped efficiently into the memories of a multiprocessor and a high speedup is obtained for parallel implementations. An optimal shift is a shift that balances total computation and communication costs. Under certain conditions, we show how to estimate an optimal shift analytically using the decay rate for the inverse of a banded matrix, and how to improve this estimate. Computational results on iPSC/2 and iPSC/860 multiprocessors are presented.

DISTRIBUTED MEMORY MULTIPROCES↗