Method for measuring alternator voltage transients
Transient voltage detection circuit measures voltage excursions and recovery times resulting from step-load changes applied to a combination alternator-voltage regulator.
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Transient voltage detection circuit measures voltage excursions and recovery times resulting from step-load changes applied to a combination alternator-voltage regulator.
Controlled current source having a high output resistance feeds continuous-flow hydrogen lamps in vacuum-ultraviolet photometric equipment. The power supply, also used with low-pressure sealed lamps, has a short recovery time and smooth regulation without overshoot.
The second portion of the advanced power conditioning system development program is reported. Five 100-watt parallel power stages with majority-vote-logic feedback-regulator were breadboarded and tested to the design goals. The input voltage range was 22.1 to 57.4 volts at loads from zero to 500 watts. The maximum input ripple current was 200 mA pk-pk (not including spikes) at 511 watts load; the output voltage was 56V dc with a maximum change of 0.89 volts for all variations of line, load, and temperature; the maximum output ripple was 320 mV pk-pk at 512 watts load (dependent on filter capacitance value); the maximum efficiency was 93.9% at 212 watts and 50V dc input; the minimum efficiency was 87.2% at 80-watt load and 50V dc input; the efficiency was above 90% from 102 watts to 372 watts; the maximum excursion for an 80-watt load change was 2.1 volts with a recovery time of 7 milliseconds; and the unit performed within regulation limits from -20 C to +85 C. During the test sequence, margin tests and failure mode tests were run with no resulting degradation in performance.
Description of certain effects related to the width of the intrinsic region produced in a silicon p-i-n diode by lithium ion drifting. It is found that for wider intrinsic regions at large forward biases there is a larger ohmic drop across the region and a correspondingly smaller current. Moreover, the recovery time decreases with increasing intrinsic region width. Conversely, the decay phase time increases with increasing intrinsic region width and with increasing current levels.
The attitude control electronics mechanization study to develop a fault tolerant autonomous concept for a three axis system is reported. Programmable digital electronics are compared to general purpose digital computers. The requirements, constraints, and tradeoffs are discussed. It is concluded that: (1) general fault tolerance can be achieved relatively economically, (2) recovery times of less than one second can be obtained, (3) the number of faulty behavior patterns must be limited, and (4) adjoined processes are the best indicators of faulty operation.
The effectiveness was assessed of a hydrogen (H2) detection concept for regenerative environmental control life support systems (EC/LSS). The concept evaluated was that utilized for the electrochemical depolarized concentrator (EDC) design, constructed, and tested for the EC/LSS space station prototype program. The EDC contains combustible gas detectors (CGDs) which were evaluated with H2. The CGDs were evaluated for linearity, position sensitivity, reproducibility, ambient effects, repeatability, speed of response, recovery time, and interchangeability. The effectiveness of CGDs located within the EDC for sensing H2 leaks at various line replaceable units in the subsystem was determined. The effects of H2 leak rate, H2 concentration of leaking gas and air currents in the vicinity of the EDC were determined. Proposed improvements for the H2 detection concept were documented and alternative H2 detection approaches were identified and analyzed.
The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.
The transient behavior of a nitric oxide trail deposited at approximately 60 km altitude is studied by the solution of the appropriate multidimensional diffusion equation which includes terms representing the effects of wind shear. Similar analysis is then carried out for the situation in the stratosphere. Trail behavior is found to be relatively independent of altitude and background ozone, but strongly dependent on the magnitude of eddy diffusity and the initial nitric oxide concentration. The nitric oxide trail reacts with ambient ozone to form nitrogen dioxide. For a trail 100 m initial radius, an ozone hole will form to a maximum size in 4 to 6 hours and then decay. The overall recovery time of the atmosphere following the creation of the trail is less than 12 hours.
Vestibular neuron activity was examined by studying nerve stimulation and evoked response. A cooling element, applied to the nerve consisted of a silver hook through which a coolant fluid flowed. Temperature changes were recorded via microtermistors on an eight channel brush recorder, together with response. Diffusion of the cooling effect was measured, recovery time was assessed, and the nerve was then studied hystologically and ultrastructurally. Problems in frog preparation were discussed along with problems in maintaining healthy specimens and bacteria controlled aquaria.
The theoretical background for a coherent demodulator for minimum shift keying signals generated by the advanced data collection/position locating system breadboard is presented along with a discussion of the design concept. Various tests and test results, obtained with the breadboard system described, include evaluation of bit-error rate performance, acquisition time, clock recovery, recycle time, frequency measurement accuracy, and mutual interference.
An optimized flight-weight prototype fluid-header panel (heatpipe radiator system) was tested in a vacuum environment over a wide range of coolant inlet temperatures, coolant flow rates, and environmental absorbed heat fluxes. The maximum performance of the system was determined. Results are compared with earlier data obtained on a smaller fluid-header feasibility panel, and computer predictions. Freeze-thaw tests are described and the change in thaw recovery time due to the addition of a low-freezing point feeder heat pipe is evaluated. Experimental panel fin-temperature distributions are compared with calculated results.
The results of the performance analysis performed on the Shuttle/Tracking and Data Relay Satellite System (TDRSS) communications system are presented. The existing Shuttle/TDRSS link simulation program were modified and refined to model the post-radio frequency interference TDRS hardware and to evaluate the performance degradation due to RFI effects. The refined link models were then used to determine, evaluate and assess expected S-band and Ku-band link performance. Parameterization results are presented for the ground station carrier and timing recovery circuits
A composite superconducting material (NbTi-Cu) was evaluated with emphasis on post quench solid cooling interaction regimes. The quasi-steady runs confirm the existence of a thermodynamic limiting thickness for insulating coatings. Two distinctly different post quench regimes of coated composites are shown to relate to the limiting thickness. Only one regime,, from quench onset to the peak value, revealed favorable coolant states, in particular in He2. Transient recovery shows favorable recovery times from this post quench regime (not drastically different from bare conductors) for both single coated specimens and a coated conductor bundle.
Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.
The use of positive bevels for P-I-N mesa structures to achieve high voltages is described. The technique of glass passivation for mesa structures is described. The utilization of high energy radiation to control the lifetime of carriers in silicon is reported as a means to achieve fast recovery times. Characterization data is reported and is in agreement with design concepts developed for power diodes.
The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.
A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.
The positive intrinsic negative (PIN) diode switch which is designed to protect the receiver from burnout or damage on transmission and channel the echo signal to the receiver on reception is outlined. The receiver must be protected firmly. A schematic diagram of a transformer rectifier (TR-ATR) switch for the Urbana Radar is shown. The T/R switch consists of a half wavelength coaxial cavity with tuning condenser and PIN diodes. Two UM4300 PIN diodes were mounted between the inner and outer conductor. The dc biasing voltage required for the PIN diodes is supplied by a control circuit. On transmission, the PIN diodes are forward biased to about 0.5 amperes. On reception, about 10 volts reverse voltage is applied to the diodes, which produces an initial reverse current to speed the recovery time. The T/R switch characteristics are estimated and the result of testing at different peak transmitter powers from 410 kW to 1500 kW is shown.