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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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98 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy

The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Effect of stress on Laves phase precipitation in creep ruptured Grade 92 ferritic martensitic steel characterized by a novel accessible method

At high temperature conditions relevant to fossil and nuclear energy plants, Laves phase (Fe 2 X, X=Mo, W) precipitation is observed in common ferritic martensitic (FM) structural steels, with various reported effects on creep behavior. Despite being valuable metrics to correlate with mechanical properties and other precipitate phases, the volume fraction and number density of Laves phase precipitates has been difficult to quantify accurately using common techniques such as transmission electron microscopy (TEM) due to the relatively large size (∼0.25 μm) and low number density (∼10 11 cm −3 ) of Laves precipitates. Here, to address this characterization challenge, we developed and demonstrated a high-throughput and widely accessible method to quantify the volume fraction and number density of the Laves phase based on scanning electron microscope (SEM) images with a backscattered electron signal and the information depth (ID) of backscattered electrons. We applied this new technique in creep ruptured Grade 92 FM steel to study the effect of Laves phase on creep properties and determine the influence of stress on Laves phase precipitation. The quantitative accuracy of the SEM-based volume fraction and number density values was verified using synchrotron high energy X-ray diffraction and serial sectioning tomography. Stress did not significantly affect the Laves phase size or volume fraction during creep testing at 550 – 650°C and stress levels of 90 – 260 MPa (vs. unstressed conditions). Conversely, a moderate but statistically significant stress-enhanced increase in Laves phase number density, corresponding to an increase in nucleation rate, occurred during creep exposure above 110 MPa.

Creep↗
DOE OSTI2025

Growth and structure of alpha-Ta films for quantum circuit integration

Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. The remaining loss pathways originate in microscopic defects that manifest as two level systems (TLSs) at low temperatures. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we investigate the growth of tantalum using magnetron sputtering on sapphire, Si, and photoresist substrates. In the case of sapphire, we present procedures for the growth of fully-oriented films with α-Ta [1 1 1]//Al2O3 [0 0 0 1] and α-Ta [1 −1 0]//Al2O3 [1 0 −1 0] orientational relationships and having residual resistivity ratio (RRR) ∼ 60 for 220 nm thick films. On Si, we find a complex grain texturing with Ta [1 1 0] normal to the substrate and RRR ∼ 30. We further demonstrate airbridge fabrication using Nb to nucleate α-Ta on photoresist surfaces. For the films on sapphire, resonators show TLS-limited quality factors of 1.3 ± 0.3 × 106 at 10 mK (for a waveguide gap and conductor width of 3 and 6 μm, respectively). Structural characterization using scanning electron microscopy, x-ray diffraction, low temperature transport, secondary ion mass spectrometry, and transmission electron microscopy reveal the dependence of residual impurities and screw dislocation density on processing conditions. The results provide practical insights into the fabrication of advanced superconducting devices including qubit arrays and guide future works on crystallographically deterministic qubit fabrication.

42 ENGINEERING↗
DOE OSTI2022

Imaging atomic-scale chemistry from fused multi-modal electron microscopy

Efforts to map atomic-scale chemistry at low doses with minimal noise using electron microscopes are fundamentally limited by inelastic interactions. Here, fused multi-modal electron microscopy offers high signal-to-noise ratio (SNR) recovery of material chemistry at nano- and atomic-resolution by coupling correlated information encoded within both elastic scattering (high-angle annular dark-field (HAADF)) and inelastic spectroscopic signals (electron energy loss (EELS) or energy-dispersive x-ray (EDX)). By linking these simultaneously acquired signals, or modalities, the chemical distribution within nanomaterials can be imaged at significantly lower doses with existing detector hardware. In many cases, the dose requirements can be reduced by over one order of magnitude. This high SNR recovery of chemistry is tested against simulated and experimental atomic resolution data of heterogeneous nanomaterials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Quantifying the Role of APB Tubes on the Work-hardening of Ordered Phases

For sixty years, it has been theorized that antiphase boundary (APB) tubes, which are defects produced by deformation, contribute to the high strength of ordered alloys or intermetallic compounds. The concept of an APB tube was originally proposed by Vidoz and Brown [A.E. Vidoz, L.M. Brown, "On work-hardening in ordered alloys", Philosophical Magazine, 7 (1962) 1167–1175] in 1962 to explain the ~50% increase in strength observed when an alloy, such as Ni 3 Fe, is chemically ordered compared to when it is disordered. The existence of APB tubes was only definitively confirmed by Chou and Hirsch in 1981 [C.T. Chou, P.B. Hirsch Antiphase domain boundary tubes in plastically deformed ordered Fe 30.5 at.% Al alloy, Philosophical Magazine, A. 44 (1981) 1415–1419] using a transmission electron microscope (TEM). Prior to the current work, there had been no studies trying to correlate the presence of APB tubes with their effect on the mechanical properties. The main finding of this project was that APB tubes do not contribute to the strength of the strongly-ordered intermetallic compounds FeAl and Ni 3 Al. This was shown by removing the APB tubes by heating the materials and showing that the mechanical properties were unaffected. In addition, in-situ deformation experiments were undertaken in a TEM on both disordered and ordered Ni 3 Fe, in which it was shown that defects (superdislocations) in the ordered alloy underwent many more interaction events than defect (dislocations) in the disordered alloy. This difference can explain the increase in the increase in strength observed when this material is ordered. The project supported a PhD student, Rachel Osmundsen, who successfully defended her thesis in April, 2022. It also supported the principal investigator, Ian Baker, two PhD exchange students and an undergraduate researcher. The work involved collaborations with the following people and use of the following facilities: Dr. Si Chen, Advanced Photon Source at Argonne National Laboratory, for synchrotron X-ray diffraction; and Dr. Katherine Shanks and Dr. Kelly Nygren, Cornell High Energy Synchrotron Source (CHESS), for synchrotron X-ray diffraction. The work led to 12 papers published in refereed journals with two papers currently submitted to journals. There were also 16 presentation made at conferences and universities on the work, ten of which were invited.

36 MATERIALS SCIENCE↗
DOE OSTI2024

High-temperature lean Cu alloys with Cr-to-Nb atomic ratio of 2

Two Cu-Cr-Nb alloys, denoted as alloy 1 (comprising Cu-0.89 at% Cr-0.42 at% Nb) and alloy 2 (comprising Cu-1.84 at% Cr-0.99 at% Nb), were produced through a series of manufacturing processes including vacuum induction melting, melt spinning, consolidation, brazing, and baking, with both alloys aimed at achieving a nominal Cr-to-Nb atomic ratio of 2. Microstructural characterization using transmission electron microscopy and X-ray diffraction identified the cubic C15 Laves-phase Cr 2 Nb as the dominant precipitate in both alloys, cross-validated by thermodynamic calculations and atomistic simulation-based density functional theory (DFT). Besides cubic C15 Cr 2 Nb, hexagonal C14-phase Cr 2 Nb and α-BiF3 cubic structured Cr 3 Nb were also observed in the alloys, including a coherent interface formed between the Cr 3 Nb precipitate and the Cu matrix. The hardness of the alloys increases, and the electrical conductivity decreases with increasing alloying addition content; two practical equations described the trends. Further DFT simulations revealed that the electrical conductivity (conductance) of the Cu/Cr 2 Nb interface is an order of magnitude higher than the intrinsic Cu high-angle grain boundaries.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Experimental and theoretical investigation of the crystalline surface, film, and interface properties of antiperovskite Mn 3 GaN grown by molecular beam epitaxy on MgO(001)

Here, we present a study of the epitaxial growth, characterization, and theoretical modeling of thin film antiperovskite Mn 3 GaN, an antiferromagnetic material with kagome structure which is grown on MgO (001) substrates using N-plasma-assisted molecular beam epitaxy. Reflection high energy electron diffraction is used to assess the in-plane evolution of the film structure during growth, and the surface is investigated in-situ using scanning tunneling microscopy and Auger electron spectroscopy. These results are combined with precision measurements done ex-situ determining the film lattice constants using a combination of x-ray diffraction with reciprocal space mapping and scanning transmission electron microscopy. Overall, a uniform, homogeneous film with an atomically smooth vacuum surface and atomically sharp substrate interface is found having very small in-plane tensile strain and mild out-of-plane compressive strain. First-principles theoretical calculations are applied in order to ascertain the lowest energy models for both the Mn 3 GaN surface and the Mn 3 GaN/MgO film/substrate interface. Models including MnGa versus MnN surface layers and MnGa versus MnN interfacial layers are considered as functions of both the Mn and Ga chemical potentials. The predictions are discussed in comparison to the experimental results. The overall findings suggest that Mn 3 GaN on MgO(001) is a viable epitaxial film which can be further explored in connection with antiferromagnetic spintronics.

Density functional theory↗
DOE OSTI2020

Rapid assessment of structural and compositional changes during early stages of zirconium alloy oxidation

A multimodal chemical imaging approach has been developed and applied to detail the dynamic, atomic-scale changes associated with oxidation of a zirconium alloy (Zircaloy-4). Scanning transmission electron microscopy, a gas-phase reactor chamber attached to an atom probe tomography instrument, and synchrotron-based X-ray absorption near-edge spectroscopy were employed to reveal morphology, composition, crystal, and electronic structure changes that occur during initial stages of oxidation at 300 °C. Oxidation was carried out in 10 mbar O 2 gas for short exposure times of 1 and 5 min. A multilayered oxide film with a cubic ZrO adjacent to the oxide/metal interface, a nanoscopic transition region with a graded composition of ZrO 2-x (where 0 < x < 1), and tetragonal ZrO 2 in the outermost oxide were formed. Partitioning of the major alloying element (tin) to the oxide/metal interface and heterogeneously within the oxide accompanied the development of the layered oxide. Our work provides a rapid, high-throughput approach for detailed characterisation of initial stages of zirconium alloy oxidation at an accelerated time scale, with implications for several other alloy systems.

36 MATERIALS SCIENCE↗