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At least 109 records · Page 6

Moiré-Assisted Strain Transfer in Vertical van der Waals Heterostructures

Strain provides a powerful method to study 2D monolayers and to tune their properties. The same approach also has great potential for van-der-Waals (vdW) heterostructures. However, we need to understand how strain can be applied to vertically stacked vdW structures, for which strain transfer from one layer to the next remains little explored. In our experiment, we fabricated vertical heterostructures consisting of transition metal dichalcogenides (TMDCs) monolayers that were deposited on a flexible substrate. These TMDC heterostructures allowed us to read out separately the strain in each monolayer by photoluminescence measurements. We find that, in TMDC heterostructures with large twist angles (>5°), strain transfer is limited. However, for aligned heterostructures with small twist angles (≤5°), near unity strain transfer efficiency is observed. Here, we correlate this finding with the moiré domains formed in the aligned heterostructures by reconstruction.

2D materials↗

Quantum Anomalous Hall Crystal at Fractional Filling of Moiré Superlattices

We predict the emergence of a state of matter with intertwined ferromagnetism, charge order, and topology in fractionally filled moiré superlattice bands. Remarkably, these quantum anomalous Hall crystals exhibit a quantized integer Hall conductance that is different than expected from the filling and Chern number of the band. Microscopic calculations show that this phase is robustly favored at half-filling (𝜈 =1/2) at larger twist angles of the twisted semiconductor bilayer 𝑡⁢MoTe 2 .

Exact diagonalization↗

Shape sensitivity analysis of wing static aeroelastic characteristics

A method is presented to calculate analytically the sensitivity derivatives of wing static aeroelastic characteristics with respect to wing shape parameters. The wing aerodynamic response under fixed total load is predicted with Weissinger's L-method; its structural response is obtained with Giles' equivalent plate method. The characteristics of interest include the spanwise distribution of lift, trim angle of attack, rolling and pitching moments, wind induced drag, as well as the divergence dynamic pressure. The shape parameters considered are the wing area, aspect ratio, taper ratio, sweep angle, and tip twist angle. Results of sensitivity studies indicate that: (1) approximations based on analytical sensitivity derivatives can be used over wide ranges of variations of the shape parameters considered, and (2) the analytical calculation of sensitivity derivatives is significantly less expensive than the conventional finite-difference alternative.

Barthelemy, Jean-Francois M.↗

Shape sensitivity analysis of wing static aeroelastic characteristics

A method is presented to calculate analytically the sensitivity derivatives of wing static aeroelastic characteristics with respect to wing shape parameters. The wing aerodynamic response under fixed total load is predicted using Weissinger's L-method; its structural response is obtained with Giles' equivalent plate method. The characteristics of interest in this study include the spanwise distribution of lift, trim angle of attack, rolling and pitching moments, wing induced drag as well as the divergence dynamic pressure. The shape parameters considered are the wing area, aspect ratio, taper ratio, sweep angle and tip twist angle. Results of sensitivity studies indicate that (1) approximations based on analytical sensitivity derivatives can be used for wide ranges of variations of the shape parameters considered and (2) the analytical calculation of sensitivity derivatives is significantly less expensive than the conventional finite difference alternative.

Barthelemy, Jean-Francois M.↗

Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

Abstract Antiferromagnetic spintronics 1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid developments very recently using antiferromagnetic materials 3,4 . Here we demonstrate a twisting strategy for constructing all-antiferromagnetic tunnel junctions down to the atomic limit. By twisting two bilayers of CrSBr, a 2D antiferromagnet (AFM), a more than 700% nonvolatile tunnelling magnetoresistance (TMR) ratio is shown at zero field (ZF) with the entire twisted stack acting as the tunnel barrier. This is determined by twisting two CrSBr monolayers for which the TMR is shown to be derived from accumulative coherent tunnelling across the individual CrSBr monolayers. The dependence of the TMR on the twist angle is calculated from the electron-parallel momentum-dependent decay across the twisted monolayers. This is in excellent agreement with our experiments that consider twist angles that vary from 0° to 90°. Moreover, we also find that the temperature dependence of the TMR is, surprisingly, much weaker for the twisted as compared with the untwisted junctions, making the twisted junctions even more attractive for applications. Our work shows that it is possible to push nonvolatile magnetic information storage to the atomically thin limit.

Science & Technology - Other Topics↗

Low-frequency Raman active modes of twisted bilayer MoS 2

Abstract We study the low-frequency Raman active modes of twisted bilayer MoS 2 for several twist angles using a force-field approach and a parametrized bond polarizability model. We show that twist angles near high-symmetry stacking configurations exhibit stacking frustration that leads to significant buckling of the moiré superlattice. We find that atomic relaxation due to the twist is of prime importance. The periodic displacement of the Mo atoms shows the realization of a soliton network, and in turn, leads to the emergence of a number of frequency modes not seen in the high-symmetry stacking systems. Some of the modes are only seen in the XZ Raman polarization setup while others are seen in the XY setup. The symmetry of the normal modes, and how this affects the Raman tensors is examined in detail.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Moiré metrology of energy landscapes in van der Waals heterostructures

The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moiré metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moiré domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moiré metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked MoSe 2 /WSe 2 . Moiré metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Light Confinement in Twisted Single-Layer 2D+ Moiré Photonic Crystals and Bilayer Moiré Photonic Crystals

Twisted photonic crystals are photonic analogs of twisted monolayer materials such as graphene and their optical property studies are still in their infancy. This paper reports optical properties of twisted single-layer 2D+ moiré photonic crystals where there is a weak modulation in z direction, and bilayer moiré-overlapping-moiré photonic crystals. In weak-coupling bilayer moiré-overlapping-moiré photonic crystals, the light source is less localized with an increasing twist angle, similar to the results reported by the Harvard research group in References 37 and 38 on twisted bilayer photonic crystals, although there is a gradient pattern in the former case. In a strong-coupling case, however, the light source is tightly localized in AA-stacked region in bilayer PhCs with a large twist angle. For single-layer 2D+ moiré photonic crystals, the light source in Ex polarization can be localized and forms resonance modes when the single-layer 2D+ moiré photonic crystal is integrated on a glass substrate. This study leads to a potential application of 2D+ moiré photonic crystal in future on-chip optoelectronic integration.

36 MATERIALS SCIENCE↗

Polarization-driven band topology evolution in twisted MoTe 2 and WSe 2

Motivated by recent experimental observations of opposite Chern numbers in R-type twisted MoTe 2 and WSe 2 homobilayers, we perform large-scale density-functional-theory calculations with machine learning force fields to investigate moiré band topology across a range of twist angles in both materials. We find that the Chern numbers of the moiré frontier bands change sign as a function of twist angle, and this change is driven by the competition between moiré ferroelectricity and piezoelectricity. Our large-scale calculations, enabled by machine learning methods, reveal crucial insights into interactions across different scales in twisted bilayer systems. The interplay between atomic-level relaxation effects and moiré-scale electrostatic potential variation opens new avenues for the design of intertwined topological and correlated states, including the possibility of mimicking higher Landau level physics in the absence of magnetic field.

36 MATERIALS SCIENCE↗

Twisted cuprate van der Waals heterostructures with controlled Josephson coupling

Twisted van derWaals (vdW) heterostructures offer a unique platform for engineering the efficient Josephson coupling between cuprate thin crystals harboring the nodal superconducting order parameter. Preparing the vdW heterostructures-based Josephson junction comprising stacked cuprates requires maintaining an ordered interface with preserved surface superconductivity. Here, we report the preparation of the Josephson junction out of the stacked Bi 2 Sr 2 CaCu 2 O 8+d crystals using the cryogenic dry transfer technique and encapsulating the junction with an insulating layer, that protects the interface during the electrical contacts evaporation at the 1×10 -6 mbar base pressure. We find that the Josephson critical current $I$ c has a maximum at low twist angles, comparable to that of the bulk intrinsic Josephson junctions, and is reduced by two orders of magnitude at twist angles close to 45°. In conclusion, the reduction of $I$ c occurs due to a mismatch between superconducting $d$-wave order parameters, which suppresses the direct Cooper pair tunneling.

2D materials↗

Nano-photocurrent Mapping of Local Electronic Structure in Twisted Bilayer Graphene

In this work, we report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as 20 nm. We show that the photocurrent changes sign at carrier densities tracking the local superlattice density of states of TBG. We use this property to identify domains of varying local twist angle by local photothermoelectric effect. Consistent with the photocurrent study, infrared nanoimaging experiments reveal optical conductivity features dominated by twist-angle-dependent interband transitions. Our results provide a fast and robust method for mapping the electronic structure of TBG and suggest that similar methods can be broadly applied to probe electronic inhomogeneities of Moiré superlattices in other van der Waals heterostructures.

36 MATERIALS SCIENCE↗

Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces

New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the rate of interlayer twist/strain relaxation during thermal annealing is critical to establish a thermal budget for vdW heterostructure construction and may provide a route to improve the homogeneity of the interface or to control its final state. Here, we characterize the spatial and temporal dependence of interfacial twist and strain relaxation in marginally-twisted hBN/hBN interfaces heated under conditions relevant to vdW heterostructure assembly and typical sample annealing. We find that the ferroelectric hBN/hBN moiré at very small twist angles (θ ≤ 0.1°) relaxes minimally during annealing in air at typical assembly temperatures of 170°C. However, at 400°C, twist angle relaxes significantly, accompanied by a decrease in spatial uniformity. Uniaxial heterostrain initially increases and then decreases over time, becoming increasingly non-uniform in direction. Structural irregularities such as step edges, contamination bubbles, or contact with the underlying substrate result in local inhomogeneity in the rate of relaxation.

2D materials↗

Tunable Second Harmonic Generation in Twisted Bilayer Graphene

Twisted stacking of van der Waals (vdW) materials introduces a new way in bandstructure engineering and has given rise to numerous extraordinary physical phenomena. Despite the absence of second harmonic generation (SHG) in non-gated monolayer graphene, artificially twisted bilayer graphene (tBLG) possesses more possible point-group symmetries including those with broken inversion-symmetry. Here, we report twist-angle-dependent SHG from tBLG, which is the first demonstration of an elemental material with intrinsically tunable nonlinearity. We show that depending on the twist angle, the susceptibility of the dominant chiral tensor component of tBLGs can vary from 0 to 28×10 4 pm 2 /V, which is at the same order of magnitude as on-resonance susceptibility of monolayer MoS 2 . These results shed light on the underlying symmetry of tBLG systems and electronic band-structure near van Hove singularities (vHs). More importantly, they introduce a new degree of freedom, the twisting, in creating efficient second-order nonlinear material form centrosymmetric constituents

36 MATERIALS SCIENCE↗

Doped moiré magnets: Renormalized flat bands and excitonic phases

Here, we explore the phase diagram of a twisted bilayer of strongly interacting electrons on a honeycomb lattice close to half filling using the slave-boson mean-field theory. Our analysis indicates that a variety of new phases can be realized as a function of chemical doping and twist angle. In particular, we find a nonmagnetic excitonic insulating phase that breaks the translational symmetry of the underlying moiré pattern. This phase results from the interplay of strong Coulomb interactions and the twist angle. In addition, we show that the features of the renormalized dispersion, such as the magic angles, depend significantly on the interactions. Our results highlight the rich physics arising in doped moiré superlattices of Mott insulators.

flat bands↗

Exact Ground State of Interacting Electrons in Magic Angle Graphene

One of the most remarkable theoretical findings in magic angle twisted bilayer graphene (TBG) is the emergence of ferromagnetic Slater determinants as exact ground states for the interacting Hamiltonian at the chiral limit. This discovery provides an explanation for the correlated insulating phase which has been experimentally observed at half filling. This work is the first mathematical study of interacting models in magic angle graphene systems. These include not only TBG but also TBG-like systems featuring four flat bands per valley, and twisted trilayer graphene systems with equal twist angles. We identify symmetries of the chiral limit of the Bistritzer-MacDonald Hamiltonian that are responsible for characterizing the Hartree-Fock ground states as zero energy many-body ground states. Furthermore, for a general class of Hamiltonian, we establish criteria that the ferromagnetic Slater determinants are the unique ground states within the class of uniformly half-filled, translation invariant Slater determinants. We then demonstrate that these criteria can be explicitly verified for TBG and TBG-like systems at the chiral limit, using properties of Jacobi-θ$${\theta }$$ and Weierstrass-℘$${\wp }$$ functions.

Becker, Simon↗

Development of a ROT22 - DATAMAP interface

This report (Contract NAS2-10331- Mod 10), outlines the development and validation of an interface between the three-dimensional transonic analysis program ROT22 and the Data from Aeromechanics Test and Analytics-Management and Analysis Package (DATAMAP). After development of the interface, the validation is carried out as follows. First, the DATAMAP program is used to analyze a portion of the Tip Aerodynamics and Acoustics Test (TAAT) data. Specifically, records 2872 and 2873 are analyzed at an azimuth of 90 deg, and record 2806 is analyzed at 60 deg. Trim conditions for these flight conditions are then calculated using the Bell performance prediction program ARAM45. Equivalent shaft, pitch, and twist angles are calculated from ARAM45 results and used as input to the ROT22 program. The interface uses the ROT22 results and creates DATAMAP information files from which the surface pressure contours and sectional pressure coefficients are plotted. Twist angles input to ROT22 program are then iteratively modified in the tip region until the computed pressure coefficients closely match the measurements. In all cases studied, the location of the shock is well predicted. However, the negative pressure coefficients were underpredicted. This could be accounted for by blade vortex interaction effects.

Shenoy, K. R.↗

Time-reversal invariant topological moiré flat band: A platform for the fractional quantum spin Hall effect

Motivated by recent observation of the quantum spin Hall effect in monolayer germanene and twisted bilayer transition-metal-dichalcogenides (TMDs), we study the topological phases of moir twisted bilayers with time-reversal symmetry and spin sz conservation. By using a continuum model description which can be applied to both germanene and TMD bilayers, we show that at small twist angles the emergent moir flat bands can be topologically nontrivial due to inversion symmetry breaking. Each of these flat bands admits a lowest-Landau-level description for each spin projection in the chiral limit and at magic twist angle. Furthermore, this allows for the construction of a many-body Laughlin state with time-reversal symmetry which can be stabilized by a short-range pseudopotential, and therefore serves as an ideal platform for realizing the so-far elusive fractional quantum spin Hall effect with emergent spin-1/2 U(1) symmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum Spin Hall Edge States and Interlayer Coupling in Twisted Bilayer WTe 2

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe 2 . However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. Here, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe 2 . Furthermore, at the tBL edges, we observe the characteristic spectroscopic signatures of the QSH edge states. For small twist angles, a rectangular moiré pattern develops, which results in local modifications of the band structure. Using first-principles calculations, we quantify the interactions in tBL WTe 2 and its topological edge states as a function of interlayer distance and conclude that it is possible to engineer the topology of WTe 2 bilayers via the twist angle as well as interlayer interactions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗