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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

Miyoshi, Kazuhisa↗
NASA NTRS1988

Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

Collis, Ward J.↗
NASA NTRS1973

Computer acquired performance data from a chemically vapor-deposited-rhenium, niobium planar diode

Performance data from a chemically vapor-deposited-rhenium, niobium thermionic converter are presented. The planar converter has a guard-ringed collector and a nominal fixed spacing of 0.25 mm (10 mils). The data were obtained by using a computerized acquisition system and are available on request to one of the authors on microfiche as individual and composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E collector T sub C, and cesium reservoir T sub R. The composite plots have constant T sub E and varying T sub C or T sub R, or both. Current, voltage envelopes having constant T sub E with and without fixed T sub C appear in the present report. The diode was tested at increments between 1600 and 2000 K for the emitter Hohlraum, 800 to 1100 K for the collector, and 540 and 650 K for the reservoir. A total of 312 current, voltage curves were obtained in the present performance evaluation. Current, voltage envelopes from three rhenium emitter converters evaluated in the present program are also given. The data are compared at commom emitter Hohlraum temperatures.

Manista, E. J.↗
NASA NTRS1977

Laboratory studies of silicon vapor deposition, phase A

A system is described capable of carrying out silicon vapor deposition experiments in the low 10 to the minus 10th power torr vacuum range. The system was assembled and tested for use in a program aimed at exploration of vacuum heteroepitaxy of silicon on several substrates of potential interest for photovoltaic applications. An experiment is described in which a silicon layer 2.5 microns thick was deposited on a pyrolytically cleaned tungsten substrate held at a temperature of 400 C. Using a resistance heated silicon source, thicker layers can be deposited in periods of hours by utilizing closer source to substrate distances.

Frost, R. T.↗
NASA NTRS1992

Chemical vapor deposition fluid flow simulation modelling tool

Accurate numerical simulation of chemical vapor deposition (CVD) processes requires a general purpose computational fluid dynamics package combined with specialized capabilities for high temperature chemistry. In this report, we describe the implementation of these specialized capabilities in the spectral element code NEKTON. The thermal expansion of the gases involved is shown to be accurately approximated by the low Mach number perturbation expansion of the incompressible Navier-Stokes equations. The radiative heat transfer between multiple interacting radiating surfaces is shown to be tractable using the method of Gebhart. The disparate rates of reaction and diffusion in CVD processes are calculated via a point-implicit time integration scheme. We demonstrate the use above capabilities on prototypical CVD applications.

Bullister, Edward T.↗
NASA NTRS1994

Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

Opila, Elizabeth J.↗
NASA NTRS1981

Development of a polysilicon process based on chemical vapor deposition, phase 1

The development of a dichlorosilane-based reductive chemical vapor deposition process for the production of polycrystalline silicon is discussed. Experimental data indicate that the ease of ignition and explosion severity of dichlorosilane (DCS)/air mixtures is substantially attenuated if the DCS is diluted with hydrogen. Redesign of the process development unit to accommodate safety related information is described. Several different sources of trichlorosilane were used to generate a mixture of redistributed chlorosilanes via Dowex ion exchange resin. The unseparated mixtures were then fed to an experimental reactor in which silicon was deposited and the deposited silicon analyzed for electrically active impurities. At least one trichlorosilane source provided material of requisite purity. Silicon grown in the experimental reactor was converted to single crystal material and solar cells fabricated and tested.

Mccormick, J.↗
NASA NTRS1980

Chemical vapor deposited tungsten with dispersed carbides for Space Shuttle check valves

A chemical vapor deposited tungsten with dispersed carbides was selected as the material for Space Shuttle Orbital Maneuvering and Reaction Control Systems check valve poppets and seats. The selection followed a NASA-sponsored prototype check valve development program utilizing the cutter-seal shell poppet concept. The poppet material is deposited as a coating approximately 0.9 mm thick and fabricated into a shell as a free standing body. The seat material is deposited as a coating 1.1 mm thick on a seat blank, and the cutter seal is machined in the coating. Module tests demonstrated that the material could be ground and lapped to very sharp edges and could cut through typical system contaminants without excessive damage to the sealing surfaces. The material was also determined to be unaffected by exposure to a strongly oxidizing storable propellant.

Williams, G. E.↗
NASA NTRS1993

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Gokoglu, S. A.↗
NASA NTRS2024

Integrated Simulations of the Sabatier and Carbon Vapor Deposition Reactor to Understand Its Impacts to Operations and Performance

The carbon vapor deposition (CVD) reactor is a technology developed by Honeywell Aerospace to convert methane, at high temperatures, into hydrogen and solid carbon. This element is coupled with a Sabatier reactor to support a closed-loop environmental control and life support system with the aim of achieving nearly complete oxygen recovery (> 95%). Initial open-loop, brassboard CVD reactor tests and simulations have shown the CVD’s ability to achieve moderately high methane conversion and high hydrogen selectivity. However, in an integrated system, additional deficiencies are expected due to recycling of unreacted or extraneous species from the Sabatier reactor (e.g., carbon dioxide, hydrogen, water) and CVD reactor (e.g., hydrocarbons, methane, etc.). Sabatier and CVD reactor models were integrated and simulated to predict potential impacts to individual reactors’ and the overall system’s performance. The simulations showed that increasing the recycle of the CVD effluent hydrogen combined with decreasing the system inlet hydrogen flow rate (i.e., drawing a stoichiometric flow rate from an electrolyzer) can lead to an oxygen recovery of > 95%. However, system integration comes at a detriment to the individual reactors. The simulations show the initial conversion from the integrated system (Sabatier = 87% and CVD = 59%) to be lower than the standalone systems (Sabatier = 91% and CVD = 69%). Furthermore, transient simulations show substrate densification, leading to worsening methane conversion coupled with increasing acetylene production, which is commensurate with soot formation. Simulations predict a shortening of the maintenance interval (i.e., time until CVD methane conversion drops below 50%) in the integrated system, which would increase the consumable substrate mass. These analyses highlight the importance of long-duration, integrated tests to corroborate these findings as well as suggest potential modifications (e.g., intermediate gas separations) to improve performance.

Air Revitalization↗
NASA NTRS1974

Vapor-deposited platinum as a fuel-cell catalyst

Electrodes are prepared by vacuum deposition of platinum on nickel substrate with conventional vapor-deposition apparatus. Amount of platinum loaded on substrate can be veried by changing exposure time during deposition. These electrodes are significantly more effective than conventional oxygen electrodes.

Asher, W. J.↗