Search NASA⌕ Search

SEARCH · Search NASA

Results for “Voltage positioning”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

A Generic Two-Vector Model Predictive Control for Hybrid Multilevel Converters

In this article, a generic two-vector model predictive control (TV-MPC) strategy is proposed for the hybrid multilevel converters (HMCs). The proposed method selects two optimal voltage vectors among all the vector candidates using a geometric positioning approach to reduce the computational burden, which is a common issue in the existing MPC methods for HMC. Then duty cycles of the two selected vectors are optimized to minimize the current tracking error, such that the current tracking performance can be enhanced compared with the conventional MPC. In addition, the voltages of the floating dc capacitors can be balanced by evaluating all switching sequences that belong to the optimal voltage vectors with optimal duty cycles. Here, the concept of the proposed TV-MPC is generic and applicable for any HMCs. A typical HMC based on active neutral-point-clamped topology is adopted as a case study in this work. Comprehensive simulation and experimental studies are performed on an all silicon-carbide HMC prototype to validate the effectiveness of the proposed control scheme.

42 ENGINEERING↗
DOE OSTI2023

Vanadium and Niobium MXenes—Bilayered V 2 O 5 Asymmetric Supercapacitors

MXenes offer high metallic conductivity and redox capacitance that are attractive for high-power, high-energy storage devices. However, they operate limitedly under high anodic potentials due to irreversible oxidation. Pairing them with oxides to design asymmetric supercapacitors may expand the voltage window and increase the energy storage capabilities. Hydrated lithium preintercalated bilayered V 2 O 5 ( δ-Li x V 2 O 5 ·nH 2 O) is attractive for aqueous energy storage due to its high Li capacity at high potentials; however, its poor cyclability remains a challenge. To overcome its limitations and achieve a wide voltage window and excellent cyclability, it is combined with V 2 C and Nb 4 C 3 MXenes. Asymmetric supercapacitors employing lithium intercalated V 2 C (Li-V 2 C) or tetramethylammonium intercalated Nb 4 C 3 (TMA-Nb 4 C 3 ) MXenes as the negative electrode, and a δ-Li x V 2 O 5 ·nH 2 O composite with carbon nanotubes as the positive electrode in 5 m LiCl electrolyte operate over wide voltage windows of 2 and 1.6 V, respectively. The latter shows remarkably high cyclability—capacitance retention of ≈95% after 10 000 cycles. Here, this work highlights the importance of selecting appropriate MXenes to achieve a wide voltage window and a long cycle life in combination with oxide anodes to demonstrate the potential of MXenes beyond Ti 3 C 2 in energy storage.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Reconfigurable Magnetotransport in MnBi 2 Te 4 via Gate and Magnetic Field Tuning

The intrinsic magnetic topological insulator MnBi 2 Te 4 is a promising platform for exploring quantum phases with nontrivial band topology and for enabling electrical control over coupled magnetic and electronic phase transitions. In-plane magnetic fields, in particular, offer a distinct means of tuning these properties by strengthening quantized Hall effects, enhancing surface energy gaps, and driving spin reorientation transitions. However, a systematic understanding of how such fields affect magnetotransport is limited. Here, the magnetotransport behavior of few-layer MnBi 2 Te 4 as a function of gate voltage, temperature, and magnetic field angle, with a primary focus on in-plane field effects, are investigated. A gate-tunable crossover in magnetoresistance is observed from positive to negative values under in-plane magnetic fields as the gate voltage is swept below the charge neutrality point at temperatures below the Néel temperature. The in-plane field drives a transition from the antiferromagnetic ground state to a ferromagnetic configuration with spins aligned in-plane, while simultaneously altering the electronic structure, as revealed by gate-dependent transport features. The angle-dependent measurements reveal strongly gate-tunable magnetotransport anisotropy. These results establish in-plane magnetic fields as an effective tuning parameter for modulating spin and charge transport in MnBi 2 Te 4 , advancing prospects for reconfigurable spintronic and topological devices.

MnBi 2 Te 4↗
DOE OSTI2021

Insight into the Solid Electrolyte Interphase Formation in Bis(fluorosulfonyl)Imide Based Ionic Liquid Electrolytes

The formation of the solid electrolyte interphase (SEI) in an ionic liquid electrolyte of 0.5 m lithium bis(fluorosulfonyl)imide (LiFSI) in 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imide at high cell voltages (1.7–1.9 V) is investigated in ordered mesoporous carbon (OMC) based Li metal cells using an operando small-angle neutron scattering (SANS) technique coupled with electrochemical impedance spectroscopy and ex situ X-ray photoelectron spectroscopy (XPS). It is demonstrated that discharging the OMC Li metal cells to ≈2 V and holding the cell voltage constant induces a rapid current increase with time, confirming extensive reduction and SEI formation. XPS analysis reveals that LiF is formed at open cell voltage (OCV), which is attributed to the carbenes generated at the lithium negative electrode because of its reaction with EMIm cation diffusing to and initiating the reaction with FSI - anions at the carbon positive electrode. It is confirmed that the chemical reaction at OCV and electrochemical reduction at high cell voltage of the FSI - anion plays a protective role against EMIm cation co-intercalation into the carbon positive electrode during the initial discharge. Operando SANS studies also suggest that slight differences occur in the surface composition and reaction mechanism as a function of cell voltage.

1-ethyl-3- methylimidazolium bis(fluorosulfonyl)im↗
DOE OSTI2024

Backaction-evading receivers with magnetomechanical and electromechanical sensors

Today's mechanical sensors are capable of detecting extremely weak perturbations while operating near the standard quantum limit. However, further improvements can be made in both sensitivity and bandwidth when we reduce the noise originating from the process of measurement itself—the quantum-mechanical backaction of measurement—and go below this ‘standard’ limit, possibly approaching the Heisenberg limit. One of the ways to eliminate this noise is by measuring a quantum nondemolition variable such as the momentum in a free-particle system. Here, we propose and characterize theoretical models for direct velocity measurement that utilize traditional electric and magnetic transducer designs to generate a signal while enabling this backaction evasion. We consider the general readout of this signal via electric or magnetic field sensing by creating toy models analogous to the standard optomechanical position-sensing problem, thereby facilitating the assessment of measurement-added noise. Using simple models that characterize a wide range of transducers, we find that the choice of readout scheme—voltage or current—for each mechanical detector configuration implies access to either the position or velocity of the mechanical subsystem. This in turn suggests a path forward for key fundamental physics experiments such as the direct detection of dark matter particles. Published by the American Physical Society 2024

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Study of CdZnTeSe Gamma-Ray Detector under Various Bias Voltages

Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of -20 V to -200 V and amplifier shaping time of 2, 3 and 6 μs. The peak position of the 59.6-keV gamma line of 241 Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at -160 V bias voltage and 3-μs shaping time. The energy resolution was relatively stable in the -120 V to -200 V range for a 6-μs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Atomic Manipulation of Single Erbium on GaAs(110): From Adatom Motion to Creation and Control of Bistable Substitutions

We demonstrate atomic-scale control over the position and configuration of single erbium (Er) atoms at the GaAs(110) surface using scanning tunneling microscopy (STM). By applying voltage pulses from the STM tip, we drive Er adatoms to move sequentially among three distinct adsorption sites and controllably substitute into Ga lattice sites. The resulting substitutional Er atoms exhibit two isoelectronic configurations that differ by less than one angstrom in lateral position and can be reversibly switched by additional voltage pulses. Differential conductance spectroscopy shows differences in the unoccupied local electronic states for the two substitutional configurations, and an absence of mid-gap states. Preliminary density functional theory (DFT) calculations support these findings, identifying the most stable adsorption and substitutional sites, their relative binding energies, charge states, and local density of states (LDOS) characteristics. Together, the experimental and theoretical results establish a method for precise, reversible manipulation of rare-earth dopants at semiconductor surfaces, opening a pathway to engineer atomic-scale quantum and optoelectronic functionalities.

Poche, Steven [Ohio State University]↗
DOE OSTI2024

Specifying angular reference for robust three-phase state estimation

While the phase angle of any of the bus voltages can be chosen as the angular reference in the state estimation formulation of positive sequence networks, the same approach does not readily extend to three-phase network state estimation problem. It is commonly assumed that there is at least one bus where the bus voltages are perfectly balanced with phase angles displaced ±120° and these balanced three phase voltages are used as the three-phase reference in solving the three-phase state estimation problem. This assumption may be quite realistic in transmission networks, and for distribution networks with a strong transmission system connection. However, it might not be realistic to assume existence of a perfectly balanced reference bus in today’s distribution systems with ever increasing penetration of renewable sources or for isolated operation of microgrids. In this paper, a novel state estimation formulation will be presented which facilitates correct solution irrespective of the existence of buses with perfectly balanced voltages. The new formulation is general, and lends itself to bad data processing. It yields accurate results in any three-phase power system irrespective of its operating conditions (balanced or highly unbalanced), configuration (isolated microgrid, connected to transmission system, etc.) and whether or not it contains any synchronous generators. The performance of the method is validated using the IEEE 123 bus three-phase system.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Positive and Negative Ion CIMS Measurements, SGP, May-June 2024

The negative ion measurements were taken using two LTOF-CIMS with two different nitrate inlets. The data labeled Aerodyne_Inlet used an Aerodyne nitrate inlet. Data labeled PCC used a custom transverse inlet. The positive ion measurements were taken using one LTOF-CIMS with hydronium as an ionization reagent using a custom transverse inlet with an inlet voltage difference of 700 V. See https://doi.org/10.1021/acs.jpca.2c01672 for more information. Peaks were autofit using tofware. Positive ion data is published in the form of peak signal/reagent signal. Data files of peak signal/reagent signal for the two mass spectrometers for the negative ion measurements are separate. Concentrations of H2SO4 are combined into one file. When measurements were overlapping, measurements from the Aerodyne nitrate inlet were used.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2026

Electrostatic Gating of Ionic Conductance through Heterogeneous van der Waals Nanopores

Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at submillimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub-10 nm nanopores drilled in van der Waals (vdW) heterostructures with internal gate electrodes made of few-layer graphene. These devices deliver up to 10-fold current modulation at gate voltages as low as 0.3 V in 10 mM KCl, and ∼2-fold modulation at near-physiological 100 mM KCl. Baseline conductance with no gate shows surface-charge-dominated transport below 100 mM KCl, consistent with negatively charged hBN walls and ∼5 nm opening of the pores. The surface charge and the electrochemical asymmetry introduced by the three-electrode configuration govern the device’s behavior: negative gate voltage (V G ) enriches ionic concentrations and enhances current, whereas positive V G induces a local depletion zone that suppresses transport. The current modulation by V G is dependent on the polarity of the transmembrane potential and leads to ion current rectification. Molecular dynamics simulations of a nanopore in a hBN–graphene–hBN stack reveal confinement and surface charge-dependent suppression of the relative permittivity of interfacial water. Continuum modeling with radially varying interfacial water permittivity reproduces the asymmetric I–V characteristics and explains how the embedded gate sculpts local potential and ion concentrations. By enabling sub-0.5 V control of ionic transport at up to 100 mM salt concentrations, these devices address a key need in nanofluidics to create low-power ionic circuits and biosensing.

Materials science↗
DOE OSTI2020

Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si 3 N 4 and Si etching

A material etching system was developed by combining beam electron injection from a direct current (DC) hollow-cathode (HC) electron source with the downstream reactive environment of a remote CF 4 /O 2 low temperature plasma. The energy of the injected beam electrons is controlled using an acceleration electrode biased positively relative to the HC Argon discharge. For an acceleration voltage greater than the ionization potential of Ar, the extracted primary electrons can produce a secondary plasma in the process chamber. We characterized the properties of the secondary plasma by performing Langmuir probe measurements of the electron energy probability function (EEPF) 2.5 cm below the extraction ring. The data indicate the existence of two major groups of electrons, including electrons with a primary beam electron energy which varies as the acceleration voltage is varied, along with low energy electrons produced by ionization of the Ar gas atoms in the process chamber by the injected beam electrons. When combining the HC Ar beam electron with a remote CF 4 /O 2 electron cyclotron wave resonance (ECWR) plasma, the EEPF of both the low energy plasma electron and beam electron components decreases. Additionally, we studied surface etching of Si3N4 and poly-crystalline Si (poly-Si) thin films as a function of process parameters, including the acceleration voltage (0-70 V), discharge current of the HC discharge (1-2 A), pressure (2- 100 mTorr), source to substrate distance (2.5 to 5 cm), and feed gas composition (with or without CF 4 /O 2 ). The direction of the incident beam electrons was perpendicular to the surface. Si 3 N 4 and poly-crystalline silicon etching are seen and indicate an electronneutral synergy effect. No/little remote plasma spontaneous etching was observed for the conditions used in this study, and the etching is confined to the substrate area irradiated by the injected beam electrons. The electron etched Si 3 N 4 surface etching rate profile distribution is confined within a ~30 mm diameter circle, which is slightly broader than the area for which poly-Si etching is seen, and coincides closely with the spatial profile of beam electrons as determined by the Langmuir probe measurements. The magnitude of poly-Si etching rate is by a factor of two times smaller than the Si 3 N 4 etching rate. In this paper, we discuss possible explanations of the data and the role of surface charging.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Atmospheric Electric Field-Mill Sensor Field Campaign Report

The foundation stone of atmospheric electricity is the existence of a Global Electric Circuit (GEC) influencing all of the planet. In fact, global thunderstorm activity acts as a voltage source that imposes a potential difference between the ionosphere (positively charged) and the Earth’s surface (negatively charged) of about ~300 kV. Such potential difference is discharged through the poorly conducting atmosphere in fair-weather regions, with atmospheric electric fields of ~100 V/m. First evidence of the GEC was gathered by scientists involved on the Carnegie vessel expeditions (early 20th Century), in which they describe a similar daily variation of the atmospheric electric field in different parts of the Pacific Ocean. Such variation become known as the Carnegie Curve (CC).

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

Generalized Analytical Estimation of Sensitivity Matrices in Unbalanced Distribution Networks

Fast and accurate estimation of sensitivity matrices is significant for the enhancement of distribution system modeling and automation. Analytical estimations have mainly focused on voltage magnitude sensitivity to active/reactive power injections for unbalanced networks with Wye-connected loads and neglecting DERs' smart inverter functionality. Hence, this paper enhances the scope of analytical estimation of sensitivity matrices for unbalanced networks with 1- Φ, 2- Φ, and 3- Φ Delta/Wye-connected loads, DERs with smart inverter functionality, and substation/line step-voltage regulators (SVR). A composite bus model comprising of DER, Delta- and Wye-connected load is proposed to represent a generic distribution bus, which can be simplified to load, PV, or voltage-controlled bus as required. Furthermore, the proposed matrix-based analytical method consolidates voltage magnitude and angle sensitivity to active/reactive power injection and tap-position of all SVRs into a single algorithm. Extensive case studies on IEEE and EPRI networks show the accuracy and wide scope of the proposed algorithm compared to the existing benchmark method.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Determination of positive anode sheath in anodic carbon arc for synthesis of nanomaterials

In the atmospheric pressure anodic carbon arc, ablation of the anode serves as a feedstock of carbon for production of nanomaterials. It is known that the ablation of the graphite anode in this arc can have two distinctive modes with low and high ablation rates. The transition between these modes is governed by the power deposition at the arc attachment to the anode and depends on the gap between the anode and the cathode electrodes. Probe measurements combined with optical emission spectroscopy are used to analyze the voltage drop between the arc electrodes. These measurements corroborated previous predictions of a positive anode sheath (i.e. electron attracting sheath) in this arc, which appears in both low and high ablation modes. However, the positive anode sheath was determined to be ~3–8 V, significantly larger than ~0.5 V predicted by previous models. Thus, there are apparently other physical mechanisms not considered by these models that force the anode sheath to be electron attracting in both ablation regimes. Another key result is a relatively low electron temperature (~0.6 eV) obtained from OES using a collisional radiative model. This result partially explains a higher arc voltage (~20 V) required to sustain the arc current of 50–70 A than predicted by existing simulations of this discharge.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Mitigation of fault related voltage swell on distribution feeders using DER-based advanced inverter controls

Unbalanced faults in distribution feeders can impact voltages on the non-faulted phases. This paper models a real-life feeder with a high penetration level of solar photovoltaic (PV) units in detail including the secondary circuits, and shows a large voltage swell in one of the non-faulted phases of the feeder during a single line to ground fault. The voltages seen during this swell are more than 1.2 p.u., which can have detrimental impacts on the connected equipment and can also lead to loss of connected generation. The reason for this voltage swell is found to be the equivalent impedance at the fault location resulting from the ratio of zero and positive sequence cable impedances. It is seen that the connected solar PV units with appropriate control are able to reduce the severity of the voltage swell, especially for higher penetration levels of solar PV considered, but not entirely eliminate it.

14 SOLAR ENERGY↗
DOE OSTI2021

Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction memory elements can be used for computation by manipulating a domain wall, a transition region between magnetic domains, but the experimental study of such devices has been limited by high current densities and low tunnel magnetoresistance. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy, spin–orbit torque switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 171% and average resistance-area product RA = 29 Ω μm2, close to the RA of the unpatterned film. Device initialization variation in switching voltage is shown to be curtailed to 7%–10% by controlling the domain wall initial position, which we show corresponds to 90%–96% accuracy in a domain wall-magnetic tunnel junction full adder simulation. Repeatability of writing and resetting the device is shown. A circuit shows an inverter operation between two devices, showing that a voltage window is large enough, compared to the variation noise, to repeatably operate a domain wall-magnetic tunnel junction circuit. These results make strides in using magnetic tunnel junctions and domain walls for in-memory and neuromorphic computing applications.

Alamdar, Mahshid (ORCID:0000000221732935)↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
DOE OSTI2020

A spin-wave magnetometer with a positive feedback

In this work, we demonstrate experimentally the operation of a spin-wave magnetometer integrated into a circuit with a positive feedback. The circuit consists of the passive magnetic and active electric parts. The magnetic part includes a sensing element, which is a magnetic cross junction made of Y 3 Fe 2 (FeO 4 ) 3 . The electric part includes a non-linear amplifier and a phase shifter. The electric and magnetic parts are connected via micrometer size antennae. Spin waves are excited by two of these antennae while the output inductive voltage produced by the interfering spin waves is detected by the third antenna. Spin waves propagating in the orthogonal arms of the cross can accumulate significantly different phase shifts, depending on the direction and the strength of the external magnetic field. The output inductive voltage reaches its maximum in the case of constructive spin wave interference. The positive feedback provides further signal amplification. It appears possible to enhance the response function, compared to the passive circuits without a feedback, by a factor of ×100 without an increase in the noise level. The experimental data show a prominent response to the external magnetic field variation, exceeding 5 x 10 3 V/T. The intrinsic noise spectral density of the device can be as low as 10 -16 V 2 /Hz. The estimated sensitivity of the prototype device is 2 x 10 -12 T/√Hz at room temperature. We argue that spin-wave magnetometers can potentially be as sensitive as SQUIDs while operating at room temperature.

36 MATERIALS SCIENCE↗