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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

High temperature thick film sensor development based on doped lanthanum chromites refractory semiconductors materials

High temperature advanced sensing materials have generated high demand due the high accuracy temperature measurements requirements for process optimization, controlling and sensing. Some technological applications of harsh conditions sensing include monitoring tiles of space shuttles, rotating bearings in aircraft engines, turbines, jet engines dynamics and chemical reactors. High temperature conditions limit the sensing strategies, where typically traditional metal thermocouples are unstable, and the sensing options are limited to optical spectroscopy methods. Recently, refractory semiconductors thick- and thin-film thermocouples have been developed and, in many cases, preferred over conventional metallic thermocouples due their spatial resolution, and capability of direct deposition on any surface. Rare earth chromites ceramics materials, exhibit some properties of interest for high temperature sensing technologies development, such as: high microstructure and sintering stability, excellent conductive behavior at high temperatures, and matching thermal expansion coefficients relative to other conductors and refractory ceramics. In this work, high performance ultra-high temperature thermocouples using p-type and n-type doped lanthanum chromites materials were fabricated and tested at temperatures up to 1500 o C. Thermoelectric voltage, Seebeck Coefficients were established for all devices, evidencing high stability and performance in prolongated operational time and harsh conditions.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2023

Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO 2 Films

Over a decade ago, ferroelectricity was discovered in doped HfO 2 thin films. The HfO 2 -based thin films have attracted much attention due to their remarkable scalability and CMOS compatibility. Other than the HfO 2 -based thin films, the undoped ZrO 2 thin films are understudied despite their commonly reported antiferroelectric behavior. However, being of the same fluorite structure as HfO 2 -based thin films, the undoped ZrO 2 also displayed considerable ferroelectricity as demonstrated in recent studies. Here, 45 nm-thick polycrystalline undoped ZrO 2 films are synthesized using atomic layer deposition with different ozone dose times. The ZrO 2 films are crystallized after atomic layer deposition at 350 °C without anneals. In general, the longer ozone dose time causes a lower in-plane tensile stress and oxygen vacancy content, which help facilitate an irreversible non-polar tetragonal to polar orthorhombic phase transition with electric-field cycling. However, the lower in-plane tensile stress and oxygen vacancy content also stabilize the monoclinic phase so that a long ozone dose time (>17.5 s) reduces the ferroelectric behavior. After wake-up cycles, the ZrO 2 thin film with an ozone dose time of 17.5 s exhibits a remanent polarization of 6 μC·cm –2 and a pyroelectric coefficient of -35 μC·K –1 ·m –2 . Moreover, the wake-up behavior is consistent between the ferroelectric and pyroelectric response. As essential factors in optimizing the growth of fluorite-structure thin films for ferroelectric applications, the in-plane tensile stress and oxygen vacancy content significantly influence the ferroelectric and pyroelectric properties. Additionally, the low thermal budget for processing ferroelectric ZrO 2 thin films is valuable for semiconductor back-end-of-line processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Revealing the role of redox reaction selectivity and mass transfer in current–voltage predictions for ensembles of photocatalysts

Photocatalysts are conceptually simple reaction units where nanoscale semiconductors integrated with catalysts drive a pair of redox reactions on illumination. However, the proximity of reaction sites performing cathodic and anodic reactions poses dire challenges to realize large light-to-fuel conversion efficiencies. In this study, a powerful, yet straightforward, equivalent-circuit detail-balance modeling framework is developed and applied to evaluate the performance of photocatalytic systems featuring multiple light absorbers. Specifically, low bandgap iridium-doped strontium titanate is modeled as a Z-scheme photocatalyst to achieve desirable hydrogen evolution and iron-based redox shuttle oxidation reactions. Our model has unique capabilities to simulate competing redox reactions and address mass-transfer limitations. In a significant departure from state-of-the-art circuit models, our study develops tools to perform load-line analyses by incorporating a net electrochemical load curve that includes both desired and competing redox reactions. Consequently, reaction selectivity is predicted from equivalent circuit models for photocatalytic and photoelectrochemical systems. Our investigation into ensembles comprised of multiple, semi-transparent light absorbers reveals their potential to outperform a single, optically thick light absorber, particularly when operated under mass-transfer-limited conditions. However, this outcome hinges on minimizing mass-transfer rates of select redox species to prevent undesired reactions of hydrogen oxidation and/or redox shuttle reduction. Our findings demonstrate that reaction selectivity can be achieved by tuning asymmetry in redox species mass-transfer even with perfectly symmetric electrocatalytic charge-transfer coefficients. The influences of various kinetic, mass-transfer, and thermodynamic parameters are explored to offer crucial insights for synthesis of the next-generation of photocatalysts and selective coatings, and reactor designs.

25 ENERGY STORAGE↗
DOE OSTI2021

Iridium valence variation and carrier sign tuning in ( Ca , Ba ) x La 2 – x CuIrO 6 double perovskites

Here, we report the structure and properties of ( Ca , Ba ) x La 2 – x CuIrO 6 . The rock-salt double perovskite structure goes through a P 1 ¯ to P 2 1 / n phase transition with increasing Ba content but not with Ca content. In both cases, the Ir ion is oxidized from 4 + to 5 + with increasing substitution. Transport and magnetic properties measurements reveal that all compositions are insulating with hysteretic spin-freezing magnetic behavior. Seebeck coefficient measurements reveal a large thermopower change from + 176 μ V /K in La 2 CuIrO 6 to – 223 μ V /K with increasing Ba content in Ba x La 2 – x CuIrO 6 . This behavior is modeled well by the Heikes formula for correlated hopping conduction. ( Ca , Ba ) x La 2 – x CuIrO 6 provides a model system for investigations of other systems with similar carrier sign tuning, with applications toward semiconductors and thermoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Structural, electronic, and polarization properties of YN and LaN

ScN has attracted great attention for its electronic properties and its ability to enhance polarization of AlN; however, its sister compounds, YN and LaN, remain much less studied. Here, we use first-principles calculations to evaluate YN and LaN in their cubic and hexagonal phases. Rocksalt YN and LaN are semiconductors, although we show that LaN differs from ScN and YN in having a direct band gap, which we attribute to its weaker p-p coupling. Both have low electron effective masses. In addition to their rocksalt structures, we evaluate the layered hexagonal and wurtzite phases of YN and LaN. For YN, the wurtzite phase cannot be stabilized, and hexagonal YN is higher in energy than rocksalt YN. In contrast, for LaN, the wurtzite phase is favored, and it is comparable in energy to rocksalt LaN. Wurtzite LaN has a polarization of 0.608 C/m 2 (referenced to the centrosymmetric layered hexagonal phase), and a high piezoelectric coefficient e 33 = 1.78 C/m 2 . Interestingly, we find that the polarization of wurtzite LaN may be reversible; we find a relatively small switching barrier of 0.06 eV per formula unit, offering the potential for its use as a ferroelectric. Since wurtzite LaN is closely lattice matched to InP, we investigate a heterostructure between (0001) wurtzite LaN and (111) zinc-blende InP, and find the polarization discontinuity would yield a bound charge of 1.3 × 10 14 e/cm 2 , offering the potential for novel electronic applications such as tunnel junctions. Furthermore, our results compare and contrast ScN, YN, and LaN, and highlight the potential of these materials for adoption in electronic and ferroelectric devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Development of an Energy-Efficient and High-Productivity Ammonia Recovery and Removal Process Using Resin-Wafer Electrodeionization

As efforts to develop various energy resources, ammonia energy is emerging as a promising carbon-free fuel alternative. Recovering high-concentration ammonia and ammonium from wastewater potentially offers significant environmental and economic benefits. However, research on recovery technologies for industries such as semiconductors remains limited. This study develops an efficient, energy-saving ammonia recovery technology using Resin Wafer Electrodeionization (RW-EDI), specifically for the semiconductor industry. RW-EDI shows promise for recovering ammonia from high-concentration wastewater. By optimizing parameters, such as voltage and initial concentration, a balance between productivity and energy consumption is achieved. Results indicate that ammonium and fluoride ion transport kinetics are similar, with minimal competition and selectivity values between 0.95 and 1.08. As the initial ammonia/ammonium concentration increases from 500 to 8000 ppm, reaction rate constants and the overall mass transfer coefficient decrease. Increasing the voltage can enhance mass transfer and eliminate barriers. Ion transport primarily occurs in the RW solid phase, accounting for 93.89% of the total current. Additionally, RW-EDI shows superior specific energy consumption within a concentration range of 500 ppm to 8000 ppm, outperforming technologies like electrodialysis by reducing specific energy consumption from 8−15 kWh/kg-NH 4 + to 1.2−2.5 kWh/kg-NH 4 + . This study highlights RW-EDI’s potential for ammonia recovery, providing valuable insights for future applications in wastewater treatment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Intermediate scattering potential strength in electron-irradiated YBa 2 Cu 3 O 7-δ from London penetration depth measurements

Temperature-dependent London penetration depth, λ(T), of a high quality optimally-doped YBa 2 Cu 3 O 7-δ single crystal was measured using tunnel-diode-resonator technique. Controlled artificial disorder was induced by low-temperature 20 K irradiation by 2.5 MeV electrons at two large doses of 3.8 x 10 19 and 5.3 x 10 19 electrons per cm 2 . The irradiation caused significant suppression of the superconductor's critical temperature, T c , from 94.6 K to 90.0 K, and to 78.7 K, respectively. The low-temperature behavior of λ(T) evolves from a T-linear in pristine state to a T 2 behavior after irradiation, expected for a line-nodal d-wave superconductor. However, the original theory that explained such behavior assumed a unitary limit of the scattering potential, whereas usually in normal metals and semiconductors, Born scattering is sufficient to describe the experiment. To estimate the scattering potential strength, we calculated the superfluid density, ρ s (t = T/T c ) = λ 2 (0)/λ 2 (T), varying the amount and strength of non-magnetic scattering using a self-consistent t-matrix theory. Fitting the obtained curves to a power law, ρ s = 1 - Rt n , and to a polynomial, ρ s = 1 - At - Bt 2 , and comparing the coefficients n in one set and A and B in another with the experimental values, we estimate the phase shift to be around 70 and 65°, respectively. We correlate this result with the evolution of the density of states with nonmagnetic disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Selective area epitaxy of GaAs films using patterned graphene on Ge

We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. GaAs selectively grows on exposed regions of the Ge substrate for graphene stripe widths of 10 μm. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. The high nucleation selectivity over several micrometers sets constraints on experimental realizations of remote epitaxy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

Thermoelectric devices possess enormous potential to reshape the global energy landscape by converting waste heat into electricity, yet their commercial implementation has been limited by their high cost to output power ratio. No single “champion” thermoelectric material exists due to a broad range of material-dependent thermal and electrical property optimization challenges. While the advent of nanostructuring provided a general design paradigm for reducing material thermal conductivities, there exists no analogous strategy for homogeneous, precise doping of materials. Here, we demonstrate a nanoscale interface-engineering approach that harnesses the large chemically accessible surface areas of nanomaterials to yield massive, finely-controlled, and stable changes in the Seebeck coefficient, switching a poor nonconventional p- type thermoelectric material, tellurium, into a robust n -type material exhibiting stable properties over months of testing. These remodeled, n -type nanowires display extremely high power factors (~500 µW m -1 K -2 ) that are orders of magnitude higher than their bulk p -type counterparts.

42 ENGINEERING↗
DOE OSTI2022

Ab initio theory of free-carrier absorption in semiconductors

The absorption of light by free carriers in semiconductors results in optical loss for all photon wavelengths. Since free-carrier absorption competes with optical transitions across the band gap, it also reduces the efficiency of optoelectronic devices such as solar cells because it does not generate electron-hole pairs. In this work, we develop a first-principles theory of free-carrier absorption taking into account both single-particle excitations and the collective Drude term, and we demonstrate its application to the case of doped Si. Here, we determine the free-carrier absorption coefficient as a function of carrier concentration and we obtain excellent agreement with experimental data. We identify the dominant processes that contribute to free-carrier absorption at various photon wavelengths, and analyze the results to evaluate the impact of this loss mechanism on the efficiency of Si-based optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

A high-temperature Rutherford Backscattering Spectrometry apparatus for in situ material characterization

A new methodology for high-temperature Rutherford Backscattering Spectrometry (HT-RBS) has been developed to enable in situ material characterization at elevated temperatures. A 3.5 MeV proton beam penetrates a 10-µm-thick 316L stainless steel foil mounted on a graphite substrate, with backscattered signals detected using an HT-RBS system. Conventional semiconductor detectors, primarily based on silicon, suffer significant performance degradation at temperatures higher than ~ 60 °C due to increased leakage current and noise, leading to signal distortion and failure. Here, to preserve spectral quality, a 5 µm aluminum foil shields the detector from thermal radiation, allowing reliable operation up to 900 °C at the target. A rotatable shutter provides additional thermal isolation during data collection pauses. In situ measurements of areal density changes of 316L stainless steel were conducted to validate the technique, revealing consistency with the known thermal expansion coefficient. The method facilitates seamless switching between irradiation and analysis, enabling continuous studies. This approach supports in situ investigations of diffusion, void swelling, creep, and corrosion, offering a versatile tool for advanced materials research.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.

Current crowding↗
DOE OSTI2024

Quantum mechanical model of crossing and anti-crossing points in 3D full-band Monte Carlo simulations

This work presents a 3D quantum mechanics based model to address the physics at band structure crossing/anti-crossing points in full band Monte Carlo (FBMC) simulations. The model solves the Krieger and Iafrate (KI) equations in real time using pre-computed coefficients at k-points spatially sampled within the first Brillouin zone. Solving the KI equations in real time makes this model applicable for all electric fields, which enables its use in FBMC device simulations. In this work, a two-level refinement scheme is used to aggressively sample regions in proximity to band crossings for accurate solutions to the KI equations and coarsely sample everywhere else to limit the number of k-points used. The presented sampling method is demonstrated on the band structure of silicon but is effective for the band structure of any semiconductor material. Next, the adaptation of the fully quantum KI model into the semi-classical FBMC method is discussed. Finally, FBMC simulations of hole transport in 4H silicon carbide with and without the KI model are performed. Results along different crystallographic directions for a wide range of electric fields are compared to previously published simulation and experimental values.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Stabilization of high-performance rock-salt LiMnSbTe3 thermoelectrics with embedded van der Waals-like gaps

Rock-salt-structured compounds like lead chalcogenides are promising thermoelectrics, as their high symmetry, strong anharmonicity, and favorable phase behavior collectively lead to high performance by enabling large power factors and ultralow thermal conductivity. Here, we report LiMnSbTe 3 , a new rock-salt semiconductor stabilized through targeted chemical design by combining hexagonal MnTe with cubic LiSbTe 2 . Embedded in the highsymmetry matrix, van der Waals-like gaps form due to Sb 2 Te 3 nanoscale segregation, which acts as effective phonon-scattering centers, leading to a low lattice thermal conductivity of 0.37Wm- 1 K -1 at 873 K with alloy scattering from disordered cations. The ordered local structure of Sb2Te 3 -type vdW-like gaps and the cross-gap interaction facilitate the carrier transport. Aided by energyconverged valence bands and a paramagnon drag effect, high Seebeck coefficients and enhanced power factor can be achieved, leading to a high ZT of 1.2 at 873 K. Furthermore, introducing Mn deficiency increases ZT to 1.5, highlighting the potential for higher performance through optimized doping or alloying. A segmented single-leg thermoelectric module achieves an output power density of 0.52 Wcm -2 and an efficiency of 8.7% under ΔT of 478 K, further demonstrating its promising thermoelectric applications.

42 ENGINEERING↗
DOE OSTI2022

Breakdown characteristics of deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiodes

A top-illuminated deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fabricated and tested. The APD devices with a circular diameter of 20 μm have demonstrated a distinctive reverse-bias breakdown behavior. The reverse breakdown voltage of the APDs is approximately -140 V, which corresponds to a breakdown electric field of 6–6.2 MV/cm for the Al 0.6 Ga 0.4 N material as estimated by Silvaco TCAD simulation. The APDs grown on the AlN bulk substrate show the lowest leakage current density of < 1 × 10 -8 A/cm 2 (at low reverse bias) compared to that of the devices grown on the AlN templates. From the photocurrent measurement, a maximum gain (current limited) of 1.2 × 10 4 is calculated. The average temperature coefficients of the breakdown voltage are negative for APD devices fabricated from both the AlN bulk substrate and the AlN templates, but these data show that the coefficient is the least negative for the APD devices grown on the low-dislocation-density AlN bulk substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Measurement of Ehrlich-Schwoebel barrier contribution to the self-organized formation of ordered surface patterns on Ge(001)

Normal-incidence 1-keV Ar + ion bombardment leads to amorphization and ultrasmoothing of Ge at room temperature, but at elevated temperatures the Ge surface remains crystalline and is unstable to the formation of self-organized nanoscale patterns of ordered pyramid-shaped pits. The physical phenomenon distinguishing the high-temperature patterning from room-temperature ultrasmoothing is believed to be a surface instability due to the Ehrlich-Schwoebel barrier for diffusing vacancies and adatoms, which is not present on the amorphous material. This real-time grazing-incidence small-angle x-ray scattering study compares smoothing of a prepatterned Ge sample at room temperature with patterning of an initially flat Ge sample at an elevated temperature. In both experiments, when the nanoscale structures are relatively small in height, the average kinetics can be explained by a linear theory. Furthermore, the linear theory coefficients, indicating surface stability or instability, were extracted for both experiments. A comparison between the two measurements allows estimation of the contribution of the Ehrlich-Schwoebel barrier to the self-organized formation of ordered nanoscale patterns on crystalline Ge surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Robust estimation of charge carrier diffusivity using transient photoluminescence microscopy

Transient microscopy has emerged as a powerful tool for imaging the diffusion of excitons and free charge carriers in optoelectronic materials. In many excitonic materials, extraction of diffusion coefficients can be simplified because of the linear relationship between signal intensity and local excited state population. However, in materials where transport is dominated by free charge carriers, extracting diffusivities accurately from multidimensional data is complicated by the nonlinear dependence of the measured signal on the local charge carrier density. To obtain accurate estimates of charge carrier diffusivity from transient microscopy data, statistically robust fitting algorithms coupled to efficient 3D numerical solvers that faithfully relate local carrier dynamics to raw experimental measurables are sometimes needed. Here, we provide a detailed numerical framework for modeling the spatiotemporal dynamics of free charge carriers in bulk semiconductors with significant solving speed reduction and for simulating the corresponding transient photoluminescence microscopy data. To demonstrate the utility of this approach, we apply a fitting algorithm using a Markov chain Monte Carlo sampler to experimental data on bulk CdS and methylammonium lead bromide (MAPbBr 3 ) crystals. Parameter analyses reveal that transient photoluminescence microscopy can be used to obtain robust estimates of charge carrier diffusivities in optoelectronic materials of interest, but that other experimental approaches should be used for obtaining carrier recombination constants. Additionally, simplifications can be made to the fitting model depending on the experimental conditions and material systems studied. Our open-source simulation code and fitting algorithm are made freely available to the scientific community.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Electronic, direct optical, and phonon-assisted optical properties of 4H Si from first principles

The cubic polytype of silicon (Si) is the most commercialized semiconductor material and finds applications in numerous electronic and optoelectronic devices, such as solar cells. However, recent reports on the synthesis of the hexagonal 4H Si polytype have attracted the attention of the scientific community to understand its functional properties. Here, we report the electronic, vibrational, and optical properties of the 4H Si polytype obtained with predictive first-principles calculations, with an emphasis of phonon-assisted absorption in the indirect regime. Compared to the cubic polytype, 4H Si shows a slightly narrower indirect gap by ∼0.05 eV. The calculated phonon-assisted optical spectra show that 4H Si exhibits a stronger absorption coefficient than cubic Si across the visible and IR spectral regions. We further evaluate the short-circuit current density of textured thin-films. We demonstrate that 4H Si can achieve the same short-circuit current density for a five times thinner film compared to the cubic polytype, which mainly resulted from absorption in the indirect gap regime. Our work demonstrates the advantages of 4H Si for thin-film silicon-based solar-cell applications.

Materials Science↗