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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Application of Weak-Beam Dark-Field STEM for Dislocation Loop Analysis

Nanoscale dislocation loops formed by irradiation can significantly contribute to both irradiation hardening and embrittlement of materials when subjected to extreme nuclear reactor environments. Here, this study explores the application of weak-beam dark-field (WBDF) scanning transmission electron microscopy (STEM) methods for quantitative irradiation-induced defect analysis in crystalline materials, with a specific focus on dislocation loop imaging and analysis. A high-purity Fe-5 wt% Cr model alloy was irradiated with 8 MeV Fe 2+ ions at 450°C to a fluence of 8.8 × 10 19 m -2 , inducing dislocation loops for analysis. While transmission electron microscopy (TEM) has traditionally been the primary tool for dislocation imaging, recent advancements in STEM technology have reignited interest in using STEM for defect imaging. This study introduces and compares three WBDF STEM methods, demonstrating their effectiveness in suppressing background contrasts, isolating defect information for dislocation loop type classification, providing finer dislocation line images for small loop analysis, and presenting inside–outside contrast for identifying loop nature. Experimental findings indicate that WBDF STEM methods surpass traditional TEM approaches, yielding clearer and more detailed images of dislocation loops. The study concludes by discussing the potential applications of WBDF STEM techniques in defect analysis, emphasizing their adaptability across various material systems beyond nuclear materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Incorporating Potassium Citrate to Improve the Performance of Tin‐Lead Perovskite Solar Cells

Abstract Easy‐to‐form tin vacancies at the buried interface of tin‐lead perovskites hinder the performance of low‐bandgap perovskite solar cells (PSCs). Here, a synergistic strategy by incorporating potassium citrate (PC) into the poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole‐transport layer to passivate the buried interface of Sn‐Pb PSCs is reported. PC neutralizes the acidity of PEDOT:PSS and stabilizes the perovskite front surface, enhancing device stability. Citrate moieties coordinate with Sn 2+ on the buried perovskite surface, preventing Sn 2+ oxidation and suppressing defect formation. Additionally, potassium cations incorporate into Sn‐Pb perovskites, enhancing crystallinity and passivating halide defects. The combined benefits enable efficient low‐bandgap Sn‐Pb PSCs with a power conversion efficiency of 22.7% and a high open‐circuit voltage of 0.894 V. Using this method, 26.1% efficiency for all‐perovskite tandem solar cells is demonstrated. These results emphasize the significance of buried interface passivation in developing efficient and stable Sn‐Pb PSCs and all‐perovskite tandem solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Failure analysis of field-failed bypass diodes

Defective bypass diodes are often found as the largest factor leading to power loss in solar modules. Here, we report on failure mechanisms by investigating shunted bypass diodes from a rooftop installation, using a combination of multiple characterizations including current–voltage analysis, thermal-runaway testing, X-ray computed tomography, lock-in thermography, focused ion-beam cross-section imaging, chemical decapsulation, optical microscopy, and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Differing from static discharge typically associated with lightning strikes on modules, we found diode failure by the mechanism of thermal damage under continuous, long-term overstress in forward bias. Our conclusion is based on evidence of energy dissipated—the small to medium extent of melt-through on the Schottky diode face. The diode failure shows distortions or roughening of the Schottky diode metal-semiconductor interface with the die attach, and some failures are accompanied by die-attach solder melting. We propose that nonuniform irradiance on the modules caused diode shunting due to extended periods of heat dissipation in the modules, because modules in this string were placed in two different orientations. In contrast, a second parallel module string of the same module type on the same rooftop with a unique plane of array did not show any diode failures. The thermal damage failure of melt-through was caused by the long-term current generated by overstressing of diodes that may have had crystalline and impurity defects.

14 SOLAR ENERGY↗
DOE OSTI2021

Manipulating the Crystallization Kinetics by Additive Engineering toward High-Efficient Photovoltaic Performance

Additive processing is proven to be an effective method to improve the efficiency and stability of perovskite solar cells; however, its intrinsic role in directing the crystallization pathway and thus morphology formation remains unknown. In situ grazing-incidence wide-angle x-ray scattering (GIWAXS) is applied to study the function of a 1,8-diiodooctane (DIO) additive in manipulating the crystallization behavior of perovskite thin films. It is seen that the DIO additive could induce multi-stage intermediate crystallization phases and increases the activation energy for nucleation and growth, which postpones the perovskite phase transformation time and broadens the transition zone. The elongated crystallization process affords improved perovskite thin film crystallinity and reduces defect density, which enables a longer carrier diffusion length. As a result, improved device efficiency, moisture, and thermal stability can be achieved. The following study provides a new prospective in understanding the additive function in perovskite thin film morphology control from fundamental parameters, indicating the importance of minor processing conditions in global property management toward high device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Seed‐Assisted Growth for Scalable and Efficient Perovskite Solar Modules

Perovskite solar modules (PSMs) have shown remarkable photovoltaic potentials, but they still suffer from large power conversion efficiency (PCE) loss on scale‐up and instability due to inferior uniformity and crystallization over large areas. Herein, the scalable production of efficient and stable PSMs using a suite of all‐scalable fabrication methods featuring a two‐step blade/dip‐coating approach to deposit the perovskite absorber layer is demonstrated. Rubidium chloride is introduced to embed (PbI 2 ) 2 RbCl complex seeds in the first‐deposited PbI 2 precursor, which assists in uniform crystallization of the perovskite layer with high crystallinity and reduced defect density over large areas. Following the optimization of RbCl additives, a champion PSM with 17.9% PCE on a 7.6 × 7.6 cm 2 substrate with a 37 cm 2 aperture area is achieved. Moreover, the RbCl‐incorporated PSMs demonstrate excellent reproducibility and stability under continuous 1 sun illumination. This work shows that the two‐step blade/dip coating is a promising method for producing high‐efficiency and stable PSMs on an industrially relevant scale.

Energy & Fuels↗
DOE OSTI2024

Self-consistent solution of the Frank–Bilby equation for interfaces containing disconnections

The quantized Frank–Bilby equation can be used to identify interfacial line defect array configurations which relax the misorientation and/or misfit of a coherent crystalline interface. These line defect arrays may be comprised of dislocations and/or disconnections, which are interfacial steps with dislocation character. When an interface contains disconnections, solution of the quantized Frank–Bilby equation is complicated by the fact that the habit plane orientation is not known in advance because it depends on the unknown spacing of the disconnection array. We present a root-finding-based method for addressing this issue, enabling a self-consistent solution for arbitrary defect content. Our method has been implemented in an open-source code which enumerates all possible solutions given a list of candidate line defects. Two cases are presented employing the code: a misoriented FCC twin boundary and an FCC/BCC phase boundary with the Nishiyama-Wasserman orientation relationship. Both cases exhibit more than 10,000 solutions to the Frank–Bilby equation, with several hundred solutions categorized as ‘‘low energy’’ and thus plausible configurations for the actual interface. The resulting set of solutions can be utilized to predict and understand the properties of a given interface.

42 ENGINEERING↗
DOE OSTI2026

Laser-Induced Enhancement of Acoustic Mode Quality Factor Revealed by Correlated Single-Particle Optical and Electron Microscopy

Acoustic modes in plasmonic nanostructures provide fundamental insights into their optomechanical behavior at the nanoscale, enabling emerging applications in plasmon-enhanced optomechanics, ultrasensitive sensing, and nanoscale energy transduction. Here we explore the modulation of acoustic phonon dynamics in lithographically fabricated gold nanodisks via laser-induced photothermal annealing. Using a correlated approach that utilizes both single-particle transient extinction spectroscopy and advanced electron microscopy, we directly link nanoscale structural transformations to changes in mechanical properties as probed through the coherence of the excited acoustic modes. Specifically, ultrafast pump–probe microscopy reveals an enhancement in the acoustic mode quality factor of annealed gold nanodisks, indicative of reduced damping and improved vibrational coherence. Structural characterization via scanning electron microscopy and electron backscatter diffraction confirms that photoinduced annealing results in smoother surface morphology and overall enhanced crystallinity. The improved crystalline order reduces defect and crystal boundary scattering, which we suggest as the reason underlying the lower quality factor before annealing. Furthermore, these findings demonstrate that targeted structural engineering at the nanoscale offers a powerful strategy for optimizing the optomechanical performance of plasmonic nanostructures, with broad implications for the design of next-generation nanophotonic and optomechanical systems.

Annealing (metallurgy)↗
DOE OSTI2024

Revealing the hidden structure of disordered materials by parameterizing their local structural manifold

Abstract Durable interest in developing a framework for the detailed structure of glassy materials has produced numerous structural descriptors that trade off between general applicability and interpretability. However, none approach the combination of simplicity and wide-ranging predictive power of the lattice-grain-defect framework for crystalline materials. Working from the hypothesis that the local atomic environments of a glassy material are constrained by enthalpy minimization to a low-dimensional manifold in atomic coordinate space, we develop a generalized distance function, the Gaussian Integral Inner Product (GIIP) distance, in connection with agglomerative clustering and diffusion maps, to parameterize that manifold. Applying this approach to a two-dimensional model crystal and a three-dimensional binary model metallic glass results in parameters interpretable as coordination number, composition, volumetric strain, and local symmetry. In particular, we show that a more slowly quenched glass has a higher degree of local tetrahedral symmetry at the expense of cyclic symmetry. While these descriptors require post-hoc interpretation, they minimize bias rooted in crystalline materials science and illuminate a range of structural trends that might otherwise be missed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Robust low-temperature (350 °C) ferroelectric Hf 0.5 Zr 0.5 O 2 fabricated using anhydrous H 2 O 2 as the ALD oxidant

Here, in this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf 0.5 Zr 0.5 O 2 (HZO) films are investigated. We demonstrate that the lower crystallization temperature of HZO films originates from a densified film deposition with an anhydrous H 2 O 2 oxidant in the atomic layer deposition process. As a consequence of this densification, H 2 O 2 -based HZO films showed completely crystallinity with fewer defects at a lower annealing temperature of 350 °C. This reduction in the crystallization temperature additionally suppresses the oxidation of TiN electrodes, thereby improving device reliability. The low-temperature crystallization process produces an H 2 O 2 -based HZO capacitor with a high remanent polarization ( P r ), reduced leakage current, high breakdown voltage, and better endurance. Furthermore, while an O 3 -based HZO capacitor requires wake-up cycling to achieve stable P r , the H 2 O 2 -based HZO capacitor demonstrates a significantly reduced wake-up nature. Anhydrous H 2 O 2 oxidant enables the fabrication of a more reliable ferroelectric HZO device using a low process thermal budget (350 °C).

36 MATERIALS SCIENCE↗
DOE OSTI2021

In 2 O 3 -Ga 2 O 3 Alloys as Potential Buffer Layers in CdTe Thin-Film Solar Cells

The efficiency of state-of-the-art Cd Te solar cells remains limited by the relatively low open-circuit voltage (V OC ). Improving the front interface is key towards realizing a higher V OC after achieving the necessary bulk carrier density and lifetime. Recent efforts in identifying buffer layers beyond Cd S have focused on Mg x Zn 1-x O, which offers tunability of the band offsets, but often suffers from high interfacial defect densities. Ga 2 O 3 -based buffer layers demonstrate tremendous improvements in interfacial defect passivation in crystalline silicon and dye-sensitized solar cells, leading to record high V OC , yet remain largely unexplored in Cd Te-based devices. Here, we perform hybrid density-functional-theory calculations to investigate pure Ga 2 O 3 and InGaO 3 alloys as a window layer in Cd Te photovoltaics. We report calculated band offsets for several pairs of solid-solid interfaces comprising transparent conducting oxide (TCO) and Cd Te heterojunctions. The results support a large conduction band offset spike of 0.67 eV for the Cd Te/Ga 2 O 3 (100) interface, while the offset is reduced to 0.18 eV for the InGaO 3 alloy and matches closely with the preferred optimum value of 0.2 eV. Device-level modeling tests of Cd Te solar cells integrating our results indicate that the highest efficiency is achieved with InGaO 3 acting both as a buffer layer and TCO. Finally, our results suggest that alloys of In 2 O 3 and Ga 2 O 3 may be attractive alternatives to Mg x Zn 1-x O for tailoring optimal conduction-band offsets of the buffer and TCO layers in high-efficiency Cd Te thin-film solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Epitaxial Growth of Ga2O3: A Review

Beta-phase gallium oxide (β-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for next-generation power electronics and deep ultraviolet optoelectronics. Key advantages of β-Ga2O3 include the availability of large-size single-crystal bulk native substrates produced from melt and the precise control of n-type doping during both bulk growth and thin-film epitaxy. A comprehensive understanding of the fundamental growth processes, control parameters, and underlying mechanisms is essential to enable scalable manufacturing of high-performance epitaxial structures. This review highlights recent advancements in the epitaxial growth of β-Ga2O3 through various techniques, including Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Mist Chemical Vapor Deposition (Mist CVD), Pulsed Laser Deposition (PLD), and Low-Pressure Chemical Vapor Deposition (LPCVD). This review concentrates on the progress of Ga2O3 growth in achieving high growth rates, low defect densities, excellent crystalline quality, and high carrier mobilities through different approaches. It aims to advance the development of device-grade epitaxial Ga2O3 thin films and serves as a crucial resource for researchers and engineers focused on UWBG semiconductors and the future of power electronics.

Chemistry↗
NASA NTRS1974

Vapor growth of GeTe single crystals in micro-gravity

The positive effects of micro-gravity on crystal growth and fundamental properties of the vapor transport reaction were established by analyzing the results of GeSe and GeTe vapor transport experiments performed on board Skylab. The analysis was based on a direct comparison of GeSe and GeTe crystals and of mass transport rate data obtained on earth and in space. For this purpose, a total of six transport experiments employing different concentrations of transport agent (GeI4) and two temperature gradients were performed during the Skylab 3 and 4 missions. Extensive ground-based studies demonstrated that the crystal morphology and the mass transport rates of the above systems are affected by the transport conditions, in particular by gravity-driven convection. The results demonstrate unambiguously a considerable improvement of the space crystals in terms of surface perfection, crystalline homogeneity and defect density. The observation of greater mass transport rates than expected in micro-gravity environment is of basic scientific and technological significance. This indicates that conventional transport models are incomplete and demonstrates that crystals of improved quality can be grown at reasonable rates by this technique in space. Results are of practical importance for the modification of crystal growth techniques on earth.

Wiedemeier, H.↗
NASA NTRS1978

Ion beam technology applications study

Specific perceptions and possible ion beam technology applications were obtained as a result of a literature search and contact interviews with various institutions and individuals which took place over a 5-month period. The use of broad beam electron bombardment ion sources is assessed for materials deposition, removal, and alteration. Special techniques examined include: (1) cleaning, cutting, and texturing for surface treatment; (2) crosslinking of polymers, stress relief in deposited layers, and the creation of defect states in crystalline material by ion impact; and (3) ion implantation during epitaxial growth and the deposition of neutral materials sputtered by the ion beam. The aspects, advantages, and disadvantages of ion beam technology and the competitive role of alternative technologies are discussed.

Sellen, J. M., Jr.↗
NASA NTRS2015

Solar Ion Processing of Itokawa Grains: Constraints on Surface Exposure Times

Analytical TEM observations obtained to date reveal that a significant sub-population of grains returned from the surface of asteroid Itokawa have had their outer 30-100 nm processed by space weathering effects. Although the effects include some surface deposition of condensed impact vapor and isolated impact melt splashes, much of the width of the space weathered outer margins or "rims" on grains is derived from solar wind processing of the original host grain. Similar to what has long been reported for some lunar grains, the ion-processed rims on Itokawa grains exhibit varing degrees and depths of penetration of atomic-displacement ion damage, resulting in complete amorphization for some rims (particularly in plagioclase), or formation of highly defective but still crystalline structures in others (particularly in pyroxene and olivine). Possibly different from lunar grains, however, is the presence of isolated internal cavities or voids in Itokawa grain rims, which may be implantation "bubbles" due to accumulating implanted solar wind H and/or He. For a given mineral exposed at a particular set of long term solar wind conditions, the level of ion damage in a given grain rim, the depth of damage penetration represented by the rim width, and the formation or lack of formation of implantation bubbles can all be linked to the time spent by the grain in an uncovered state on the topmost, space-exposed, regolith surface. For the lunar case, we have previously shown that with reasonable assumptions about solar wind characteristics over time, a model can be developed to estimate this exposure time based on the width of amorphous rims on lunar grains. Here we report on an expansion of the model to cover exposure time information contained in the array of solar ion-induced features in Itokawa grains.

Christoffersen, R.↗
DOE OSTI2021

Specialized diamond materials for NMR applications

Polarizable diamond materials and methods for obtaining nuclear magnetic resonance spectra of samples external to the diamond materials are described. The diamond materials can include 12C, 13C, substitutional nitrogen, and nitrogen vacancy defects in a crystalline lattice, wherein the substitutional nitrogen concentration is between 10 ppm and 200 ppm, the nitrogen vacancy concentration is between 10 ppb and 10 ppm, and the 13C concentration is greater than 1.1% and not more than 25%. Methods for obtaining nuclear magnetic resonance spectra can include optically pumping a diamond material to generate electron spin hyperpolarization in nitrogen vacancy centers, transferring the electron spin hyperpolarization to nuclei of the sample, and generating a nuclear magnetic resonance spectrum by applying a magnetic field to the sample, exciting the sample with a radio frequency pulse, and detecting a nuclear magnetic resonance response from the sample.

Parker, Alfred↗
DOE OSTI2024

Crystalline Si Surface Passivation with Nafion for Bulk Defects Detection with Electron Paramagnetic Resonance

Here, in monocrystalline Si (c-Si) solar cells, identification and mitigation of bulk defects are crucial to achieving a high photoconversion efficiency. To spectroscopically detect defects in the c-Si bulk, it is desirable to passivate the surface defects. Passivation of the c-Si surface with dielectrics such as Al 2 O 3 and SiNx requires deposition at elevated temperatures, which can influence defects in the bulk. Herein, we report on the passivation of different Czochralski (Cz) Si wafer surfaces by an organic copolymer, Nafion. We test the efficacy of the surface passivation at temperatures ranging from 6 to 473 K to detect bulk defects using electron paramagnetic resonance (EPR) spectroscopy. By comparing with state-of-the-art passivation layers, including Al 2 O 3 and liquid HF/HCl, we found that at room temperature, Nafion can provide comparable passivation of n-type Cz Si with an implied open-circuit voltage (iV oc ) of 713 mV and a recombination current prefactor J o of 5 fA/cm 2 . For p-type Cz Si, we obtained an iV oc of 682 mV with a J o of 22.4 fA/cm 2 . Scanning electron microscopy and photoluminescence reveal that Nafion can also be used to passivate the surface of c-Si solar cell fragments scribed from a solar cell module by using a laser. Consistent with previous studies, analysis of the EPR spectroscopy data confirms that the H-terminated surface is necessary, and fixed negative charge in Nafion is responsible for the field-effect passivation. While the surface passivation quality was maintained for almost 24 h, which is sufficient for spectroscopic measurements, the passivation degraded over longer durations, which can be attributed to surface SiO x growth. These results show that Nafion is a promising room-temperature surface passivation technique to study bulk defects in c-Si.

14 SOLAR ENERGY↗
DOE OSTI2022

Defect-mediated ripening of core-shell nanostructures

Abstract Understanding nanostructure ripening mechanisms is desirable for gaining insight on the growth and potential applications of nanoscale materials. However, the atomic pathways of nanostructure ripening in solution have rarely been observed directly. Here, we report defect-mediated ripening of Cd-CdCl 2 core-shell nanoparticles (CSN) revealed by in-situ atomic resolution imaging with liquid cell transmission electron microscopy. We find that ripening is initiated by dissolution of the nanoparticle with an incomplete CdCl 2 shell, and that the areas of the Cd core that are exposed to the solution are etched first. The growth of the other nanoparticles is achieved by generating crack defects in the shell, followed by ion diffusion through the cracks. Subsequent healing of crack defects leads to a highly crystalline CSN. The formation and annihilation of crack defects in the CdCl 2 shell, accompanied by disordering and crystallization of the shell structure, mediate the ripening of Cd-CdCl 2 CSN in the solution.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Parasitic structure defect blights sustainability of cobalt-free single crystalline cathodes

Abstract Recent efforts to reduce battery costs and enhance sustainability have focused on eliminating Cobalt (Co) from cathode materials. While Co-free designs have shown notable success in polycrystalline cathodes, their impact on single crystalline (SC) cathodes remains less understood due to the significantly extended lithium diffusion pathways and the higher-temperature synthesis involved. Here, we reveal that removing Co from SC cathodes is structurally and electrochemically unfavorable, exhibiting unusual voltage fade behavior. Using multiscale diffraction and imaging techniques, we identify lithium-rich nanodomains (LRNDs) as a heterogeneous phase within the layered structure of Co-free SC cathodes. These LRNDs act as critical tipping points, inducing significant chemo-mechanical lattice strain and irreversible structural degradation, which exacerbates the voltage and capacity loss in electrochemical performance. Our findings highlight the considerable challenges of developing Co-free SC cathodes compared to polycrystalline ones and emphasize the need for new strategies to balance the interplay between cost, sustainability, and performance.

36 MATERIALS SCIENCE↗