Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
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99 GENERAL AND MISCELLANEOUS↗
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Trap characterization of high-growth-rate laser-assisted MOCVD GaN
A detailed study comparing defect incorporation between laser-assisted metal-organic chemical vapor deposition (MOCVD)-grown GaN and conventional low- and high-growth-rate MOCVD GaN was conducted. Using deep-level transient and optical spectroscopy, traps throughout the bandgap were characterized where traps were found at EC-0.25 eV, EC-0.57 eV, EC-0.72 eV, EC-0.9 eV, EC-1.35 eV, EC-2.6 eV, and EC-3.28 eV in all three samples. This indicates no new traps were observed in the laser-assisted MOCVD GaN sample. Overall, the trap concentrations in the laser-assisted MOCVD sample were ∼2× higher than the optimal low-growth-rate sample, but this is primarily due to the increase in gallium vacancy EC-2.6 eV and carbon-related EC-3.28 eV trap concentrations. The EC-0.9 eV trap concentration was ∼2× higher in the laser-assisted sample, so proton irradiation experiments were conducted to identify the physical source of this level. The results indicated this was a native point defect likely related to gallium interstitials. Overall, this study shows that the laser-assisted MOCVD growth method is promising for future thick, high-quality GaN epilayers after further growth optimizations.
Physics↗
Improved VOC in RbF-Treated Cu(In,Ga)Se2 Solar Cells via Passivation of Recombination Centers
Cu(In,Ga)Se 2 (CIGS) solar cells have benefited in recent years from the addition of heavy alkali elements, such as Rb, which increase the solar cell open-circuit voltage ( V OC ). To investigate the source of this improvement, here, we compare samples with and without Rb to perform a quantitative comparison of electronic defects and minority carrier lifetime. Deep-level transient and optical spectroscopy measurements were performed on two sets of rubidium fluoride (RbF)-treated and untreated CIGS, and three distinct traps were identified regardless of RbF treatment. The RbF treatment was found to reduce the concentration of the H2 trap, which was previously found to act as a recombination center and is located preferentially at CIGS grain boundaries. Time-resolved photoluminescence measurements showed an increase in effective lifetime after RbF and nearly all lifetime improvement resulted from reductions in bulk recombination. The observed V OC improvement is well correlated with increased minority carrier lifetime and acceptor concentration, which led to increases and decreases in electron and hole quasi-Fermi levels, respectively.
Cu(In Ga)Se2 (CIGS)↗
Impact of K-Optimization on Trap Concentration in (Ag,Cu)(In,Ga)Se 2 Solar Cells
Recent progress has been made in improving efficiency in Cu(In,Ga)Se 2 (CIGS) absorbers with steady increases in peak efficiency. One way this has been achieved is by adding Ag to CIGS (ACIGS) to achieve higher V OC . However, these efficiencies are still well below the Shockley-Queisser efficiency limit, and traps acting as recombination centers and compensating centers are one thing limiting the solar efficiency. Past research in CIGS has shown that alkali treatment can improve the efficiency and metastability problems in CIGS, but less is understood about the role of alkali treatments in ACIGS. Here, we investigate the impact of potassium in ACIGS through its impact on trap incorporation and minority carrier lifetime. The samples in this study were grown in a roll-to-roll coater with Mo, ACIGS, CdS, and ZnO structure. Both cells were grown identically except the second (K-optimized) cell was grown with increased K-doping of the Mo contact and was more Cu-poor near the surface to optimize the K profile. This resulted in an efficiency increase from 16.8% to 18.7% for the K-optimized cell, which was mostly due to a 65 mV V OC increase. The doping profile showed a 2X increase in acceptor concentration of the K-optimized cell (2.5×10 15 cm -3 ) which suggests that the K was better incorporated into the ACIGS after these optimizations. To characterize the traps in these cells, deep level transient and optical spectroscopy were used. The DLOS measurements showed an EV+0.98 eV trap whose concentration was reduced 10X in the K-optimized cell (4×10 14 cm -3 ). This is consistent with previous results from the alkali treatment in CIGS, which also showed a decrease in near-conduction band trap concentration [1], but the reduction was larger than previous studies possibly indicating the combination of K and Cu-poor surface may both have aided in reducing the EV+0.98 eV trap concentration. The other primary trap is the mid-gap trap (EV+0.58 eV), which was quantified using DLTS. Its concentration decreased from 9×10 13 cm -3 to 4×10 13 cm -3 in the K-optimized sample, which is a 2X reduction. Previous studies have shown this trap is likely an efficient recombination center [2], which makes sense because it is near mid-gap. This trap has also been associated with V OC instability and reduction, so reducing this trap concentration is essential to achieve high V OC and cell efficiency. To help confirm this association, time-resolved photoluminescence measurements have shown in this sample set and a previous study that the minority carrier lifetime (19 ns baseline to 56 ns K-optimized) and this EV+0.56 eV trap concentration are inversely proportional, which would be expected for a recombination-limited carrier lifetime. The K optimization of ACIGS results in significantly improved cell efficiency and reduced trap concentrations that correlate with the improved material and electrical properties. We will report on this and the impact of the K optimization on the cell metastability.
14 SOLAR ENERGY↗
Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect
A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.
Lagowski, J.↗
Assessment of deep levels with selenium concentration in Cd 1–x Zn x Te 1–y Se y room temperature detector materials
Incorporation of Se into Cd 1–x Zn x Te (CZT) to form the quaternary compound semiconductor Cd 1–x Zn x Te 1–y Se y (CZTS) has proven to be an effective solution for compensating the major flaws associated with CZT, including poor homogeneity and high concentrations of electronically active deep levels that limit the performance of CZT detectors. In order to investigate how deep levels are affected by the Se concentration in CZTS, we performed photoinduced current transient spectroscopy (PICTS) measurements on CZTS crystals grown by the traveling heater method (THM) with 10% atomic Zn and varying atomic percentage of Se from 1.5% to 7.0%. The PICTS scans for up to 4% Se showed an exponential reduction in the capture cross section of deep levels associated with Te secondary phases in conjunction with an increase in a deep level positioned near the mid-gap, which initially increases the electron trapping time before degrading again at higher Se concentrations. The PICTS peaks present in 7% Se were anomalous relative to the other crystals and are expected to originate from transition metal impurities found in the lower-purity CdSe precursor material.
36 MATERIALS SCIENCE↗
Study of GaAs-oxide interface by transient capacitance spectroscopy - Discrete energy interface states
Interface states and bulk GaAs energy levels were simultaneously investigated in GaAs MOS structures prepared by anodic oxidation. These two types of energy levels were successfully distinguished by carrying out a comparative analysis of deep level transient capacitance spectra of the MOS structures and MS structures prepared on the same samples of epitaxially grown GaAs. The identification and study of the interface states and bulk levels was also performed by investigating the transient capacitance spectra as a function of the filling pulse magnitude. It was found that in the GaAs-anodic oxide interface there are states present with a discrete energy rather than with a continuous energy distribution. The value of the capture cross section of the interface states was found to be 10 to the 14th to 10 to the 15th/sq cm, which is more accurate than the extremely large values of 10 to the -8th to 10 to the -9th/sq cm reported on the basis of conductance measurements.
Kamieniecki, E.↗
Dual-comb spectroscopy in the deep ultraviolet
This Letter reports dual-frequency-comb spectroscopy in the deep ultraviolet used to characterize transient laser-produced plasmas. Dual-comb spectroscopy at these wavelengths enables access to a large number of strong electronic transitions in neutral and ionized atoms and molecules. This broadband dual-frequency-comb system at 265 nm measures multiple transitions in neutral and singly ionized iron atoms in a laser-produced plasma. Analysis of absorption spectra yields time-resolved ion and neutral column densities, excitation temperatures, and electron densities, which are measured down to 10 14 cm —3 levels. The results provide insights into low-temperature plasma properties.
47 OTHER INSTRUMENTATION↗
The Galex Time Domain Survey. I. Selection And Classification of Over a Thousand Ultraviolet Variable Sources
We present the selection and classification of over a thousand ultraviolet (UV) variable sources discovered in approximately 40 deg(exp 2) of GALEX Time Domain Survey (TDS) NUV images observed with a cadence of 2 days and a baseline of observations of approximately 3 years. The GALEX TDS fields were designed to be in spatial and temporal coordination with the Pan-STARRS1 Medium Deep Survey, which provides deep optical imaging and simultaneous optical transient detections via image differencing. We characterize the GALEX photometric errors empirically as a function of mean magnitude, and select sources that vary at the 5 sigma level in at least one epoch. We measure the statistical properties of the UV variability, including the structure function on timescales of days and years. We report classifications for the GALEX TDS sample using a combination of optical host colors and morphology, UV light curve characteristics, and matches to archival X-ray, and spectroscopy catalogs. We classify 62% of the sources as active galaxies (358 quasars and 305 active galactic nuclei), and 10% as variable stars (including 37 RR Lyrae, 53 M dwarf flare stars, and 2 cataclysmic variables). We detect a large-amplitude tail in the UV variability distribution for M-dwarf flare stars and RR Lyrae, reaching up to absolute value(Δm) = 4.6 mag and 2.9 mag, respectively. The mean amplitude of the structure function for quasars on year timescales is five times larger than observed at optical wavelengths. The remaining unclassified sources include UV-bright extragalactic transients, two of which have been spectroscopically confirmed to be a young core-collapse supernova and a flare from the tidal disruption of a star by dormant supermassive black hole. We calculate a surface density for variable sources in the UV with NUV less than 23 mag and absolute value(Δm) greater than 0.2 mag of approximately 8.0, 7.7, and 1.8 deg(exp −2) for quasars, active galactic nuclei, and RR Lyrae stars, respectively. We also calculate a surface density rate in the UV for transient sources, using the effective survey time at the cadence appropriate to each class, of approximately 15 and 52 deg(exp −2 yr−1 for M dwarfs and extragalactic transients, respectively.
Gezari, S.↗
The Origins Space Telescope Integration and Testing
This paper describes the plans, flows, key facilities, test beds, pathfinders, simulators and ground support equipment that could be used to fully integrate, functionally test and qualify the Origins Space Telescope (Origins). The Origins Observatory consists of the Spacecraft Bus Module (SBM) and the Cryogenic Payload Module (CPM), which comprises the telescope and three science instruments. The telescope is a Three Mirror Anastigmat (TMA) and is composed of four mirrors: three with optical power (the elliptical primary, hyperbolic secondary, and elliptical tertiary mirrors) and a flat field-steering mirror (FSM). The three science instruments spanning the wavelength range 2.8 to 588 μm provide the powerful new spectroscopic and imaging capabilities required to achieve the scientific objectives. The Origins Survey Spectrometer (OSS) uses six gratings in parallel to take multi-beam spectra simultaneously across the 25 to 588 μm window through long slits enabling deep 3D extra-galactic surveys. The Far-IR Imager/Polarimeter (FIP) provides imaging and polarimetric measurement capabilities at 50 and 250 μm. Its fast mapping enables rapid follow-up of transient or variable sources and efficient monitoring campaigns. The Mid-Infrared Spectrometer (MISC-T) provides spectroscopy simultaneously over 2.8 to 20 μm with exquisite stability and precision (<5 ppm between 2.8 to 10 μm, <20 ppm between 11 to 20 μm). All the instruments are delivered for Integration and Test fully qualified and calibrated. The Integration and Test program implemented at each level of assembly is discussed as well as the separation of thermal vacuum testing between the hot and cold zones of the Observatory. Portions of this manuscript appear in the Origins Study Final Report.
Origins↗
High-Energy Hybridized States Enable Long-Lived Hot Electrons in Cobaloxime-Silicon Nanocrystal System
Strong electronic coupling is achieved between the molecular catalyst cobaloxime ([Co]) and silicon nanocrystals (Si NCs) bridged by an ethylenepyridine group derived from vinylpyridine (vpy) covalently bound to the Si NC surface (Si-vpy-[Co]). The ethylenepyridine tether in Si-vpy-[Co] is key to dramatic changes to the system’s physical properties which are not observed in the corresponding formylpyridine (fpy) system (Si-fpy-[Co]) consistent with strong electronic coupling previously observed only in dark electrochemical systems. UV−vis absorption spectroscopy reveals new [Co]-centered electronic states in Si-vpy-[Co], and transient absorption spectroscopy finds a strong absorption feature appearing within 250 fs and persisting for at least 5 ns. Astoundingly, spectroelectrochemical measurements reveal that this absorption feature is consistent with both the singly reduced [Co] − and doubly reduced [Co] 2− complexes, leading to the conclusion that these long-lived charges are derived from high-energy “hot” electrons residing in [Co]-centered states. Detailed analysis using cyclic voltammetry, spectroelectrochemistry, electron paramagnetic resonance spectroscopy, and density functional theory (DFT) calculations provides insight into the unique electronic structure created in Si-vpy-[Co]. DFT reveals that the new electronic states arise from hybridization between deep Si NC band states and high-energy molecular orbitals of the ethylenepyridine tether and the [Co] catalyst and are facilitated by σ-bonding character at the ethylenepyridine linkage. This study demonstrates that strong electronic coupling achieved through precise molecular chemistry can change the paradigm of otherwise fixed energy levels in hybrid photoelectrochemical systems for artificial photosynthesis and related applications.
14 SOLAR ENERGY↗
Development of a molecularly informed biogeochemical framework for reactive transport modeling of subsurface carbon inventories, transformations and fluxes (Final Report)
The overall objective of the project was to combine new molecular-level characterization strategies with soil carbon flux measurements to develop and evaluate model representations of subsurface carbon cycling. We expanded on existing studies in the East River watershed, Colorado, in collaboration with the Berkeley Lab Watershed Function Scientific Focus Area (SFA), SLAC Groundwater Quality SFA, and Rocky Mountain Biological Laboratory (RMBL) to develop an elevation and vegetation gradient that is now the subject of long-term monitoring by the USGS. To achieve the overall objective, we combined field studies of soil respiration with laboratory analyses, ranging from spectroscopy to incubation studies. This combination of techniques enabled us to develop a new understanding of the drivers of high-elevation soil respiration. In the process, we developed three new modeling approaches that improve our ability to conceptualize and ultimately to represent soil respiration in numerical models. The first approach is a plot-scale transient inverse model that can be used to determine in situ CO 2 production rates from measured concentration profiles and surface fluxes. Application of this method revealed the importance of plant phenology and deep CO 2 production in moderating CO 2 fluxes to the atmosphere. The second modeling approach is a molecular-scale tool that enables spectroscopic and elemental data for carbon speciation to be transformed into functional group abundances, or the ‘SOC-fga model’. This method uniquely enables carbon speciation to be tracked within a reactive transport framework to partition carbon among different pathways and storage zones within the soil. The third modeling tool builds strongly on the previous approaches and captures the microbial processes driving heterotrophic respiration. This ‘dormancy model’ allows the native soil microbial population to respond transiently to the presence or absence of water in order to catalyze carbon respiration. This approach was also compared to the simpler and more widely used first-order model using two experimental datasets with different temporal and spatial resolutions. Our results illustrate that the simpler first order model provides a robust and efficient representation of deep (>1 meter) soil respiration, but that shallow soils, where most respiration occurs, require explicit representation of moisture-dependent activation and dormancy rates. By assessing soil organic carbon turnover at multiple scales, we see a complex array of controls emerge. Atte scale of a hillslope, spatial heterogeneity in soil respiration rates dominates and is uncorrelated with instantaneous soil moisture and plant community. At the profile scale, the balance between plant inputs and water availability is the dominant control. At the microbial to molecular scale, physiological processes associated with carbon use and carbon speciation are important controls. These scale-dependent controls emphasize the need for new modeling approaches that examine their interactions and hierarchies.
54 ENVIRONMENTAL SCIENCES↗