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At least 109 records · Page 6

The large decline in carbonate $\delta^{238}$U from a PETM section at Tingri (South Tibet) was driven by local sea-level changes, not global oceanic anoxia

Uranium isotope compositions (δ 238 ) and Th/U in carbonates are being explored as paleoredox proxies to study global oceanic anoxia. However, the impact of changes to local depositional environments that might cause a decline in δ 238 U and an increase in Th/U has not been thoroughly investigated. Here we report a decline in δ 238 U (from +0.1 to -0.3‰) and an increase in Th/U from shallow-marine carbonates during the Paleocene-Eocene thermal maximum at Tingri (south Tibet). Changes of δ 238 U and Th/U are not fully coupled. The decline in δ 238 U coincided with a local sea-level fall, whereas the increase in Th/U occurred mainly during a sea-level rise. The decline in δ 238 U likely results from changes in redox conditions of pore waters and in primary carbonate mineralogy. The increase in Th/U is ascribed to reduced authigenic U(IV) accumulation. Here our results suggest that changes in local depositional environments can cause behavior of δ 238 U and Th/U resembling that induced by expanded global oceanic anoxia. This finding calls for caution to consider local factors before applying δ 238 U and Th/U as global paleoredox proxies.

58 GEOSCIENCES↗

Nonlinear global gyrokinetic delta- f turbulence simulations in a quasi-axisymmetric stellarator

We use the global gyrokinetic stellarator code XGC-S to look at turbulence physics in geometry of the proposed quasi-axisymmetric stellarator, QUASAR. In this article, the XGC-S code is first verified for nonlinear simulations of ion temperature gradient-driven turbulence by a successful benchmark with the established nonlinear tokamak code XGC1 in a CYCLONE-like tokamak case. We then apply the XGC-S code to QUASAR for nonlinear turbulence physics. We find that the highly poloidally localized linear mode gives way to a more evenly distributed nonlinear turbulent structure. Furthermore, the radial extent of the mode increases and occupies a large fraction of the volume, despite the initially localized temperature profile, as the profiles relax.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Numerical study of $\delta$-function current sheets arising from resonant magnetic perturbations

We report general three-dimensional toroidal ideal magnetohydrodynamic equilibria with a continuum of nested flux surfaces are susceptible to forming singular current sheets when resonant perturbations are applied. The presence of singular current sheets indicates that, in the presence of non-zero resistivity, magnetic reconnection will ensue, leading to the formation of magnetic islands and potentially regions of stochastic field lines when islands overlap. Numerically resolving singular current sheets in the ideal magnetohydrodynamics (MHD) limit has been a significant challenge. This work presents numerical solutions of the Hahm–Kulsrud–Taylor (HKT) problem, which is a prototype for resonant singular current sheet formation. The HKT problem is solved by two codes: a Grad–Shafranov (GS) solver and the Stepped Pressure Equilibrium Code (SPEC) code. The GS solver has built-in nested flux surfaces with prescribed magnetic fluxes. The SPEC code implements multi-region relaxed magnetohydrodynamics (MRxMHD), whereby the solution relaxes to a Taylor state in each region while maintaining force balance across the interfaces between regions. As the number of regions increases, the MRxMHD solution appears to approach the ideal MHD solution assuming a continuum of nested flux surfaces. We demonstrate agreement between the numerical solutions obtained from the two codes through a convergence study.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising route to advance microwave and power electronics with nitride semiconductors. The electron mobility in thin GaN quantum wells embedded in AlN is limited by high internal electric field and the presence of undesired polarization-induced two-dimensional hole gases (2DHGs). To enhance the electron mobility in such heterostructures on AlN, previous efforts have resorted to thick, relaxed GaN channels with dislocations. In this work, we introduce n-type compensation δ-doping in a coherently strained single-crystal (Xtal) AlN/GaN/AlN heterostructure to counter the 2DHG formation at the GaN/AlN interface, and simultaneously lower the internal electric field in the well. This approach yields a δ-doped XHEMT structure with a high 2DEG density of ∼3.2×1013 cm−2 and a room temperature (RT) mobility of ∼855 cm2/Vs, resulting in the lowest RT sheet resistance 226.7 Ω/□ reported to date in coherently strained AlN/GaN/AlN HEMT heterostructures on the AlN platform.

Physics↗