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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗
DOE OSTI2023

A Novel Spatial-Temporal Variational Quantum Circuit to Enable Deep Learning on NISQ Devices

Quantum computing presents a promising approach for machine learning with its capability for extremely parallel computation in high-dimension through superposition and entanglement. Despite its potential, existing quantum learning algorithms, such as Variational Quantum Circuits (VQCs), face challenges in handling more complex datasets, particularly those that are not linearly separable. What’s more, it encounters the deployability issue, making the learning models suffer a drastic accuracy drop after deploying them to the actual quantum devices. To overcome these limitations, this paper proposes a novel spatial-temporal design, namely “ST-VQC”, to integrate nonlinearity in quantum learning and improve the robustness of the learning model to noise. Specifically, ST-VQC can extract spatial features via a novel block-based encoding quantum sub-circuit coupled with a layer-wise computation quantum sub-circuit to enable temporal-wise deep learning. Additionally, a SWAP-Free physical circuit design is devised to improve robustness. These designs bring a number of hyperparameters. After a systematic analysis of the design space for each design component, an automated optimization framework is proposed to generate the ST-VQC quantum circuit. The proposed ST-VQC has been evaluated on two IBM quantum processors, ibm-cairo with 27 qubits and ibmq-lima with 7 qubits to assess its effectiveness. The results of the evaluation on the standard dataset for binary classification show that ST-VQC can achieve over 30% accuracy improvement compared with existing VQCs on actual quantum computers. Moreover, on a non-linear synthetic dataset, the STVQC outperforms a linear classifier by 27.9%, while the linear classifier using classical computing outperforms the existing VQC by 15.58%.

Li, Jinyang↗
DOE OSTI2017

Analysis of Multilayer Devices for Superconducting Electronics by High-Resolution Scanning Transmission Electron Microscopy and Energy Dispersive Spectroscopy

We used a focused ion beam to obtain cross-sectional specimens from both magnetic multilayer and Nb/Al-AlOx/Nb Josephson junction devices for characterization by scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDX). An automated multivariate statistical analysis of the EDX spectral images produced chemically unique component images of individual layers within the multilayer structures. STEM imaging elucidated distinct variations in film morphology, interface quality, and/or etch artifacts that could be correlated to magnetic and/or electrical properties measured on the same devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices

GaN is an attractive material for high-power electronics due to its wide bandgap and large breakdown field. Verticalgeometry devices are of interest due to their high blocking voltage and small form factor. One challenge for realizing complex vertical devices is the regrowth of low-leakage-current p-n junctions within selectively defined regions of the wafer. Presently, regrown p-n junctions exhibit higher leakage current than continuously grown p-n junctions, possibly due to impurity incorporation at the regrowth interfaces, which consist of c-plane and non-basal planes. Here, we study the interfacial impurity incorporation induced by various growth interruptions and regrowth conditions on m-plane p-n junctions on free-standing GaN substrates. The following interruption types were investigated: (1) sample in the main MOCVD chamber for 10 min, (2) sample in the MOCVD load lock for 10 min, (3) sample outside the MOCVD for 10 min, and (4) sample outside the MOCVD for one week. Regrowth after the interruptions was performed on two different samples under n-GaN and p-GaN growth conditions, respectively. Secondary ion mass spectrometry (SIMS) analysis indicated interfacial silicon spikes with concentrations ranging from 5e16 cm -3 to 2e18 cm -3 for the n-GaN growth conditions and 2e16 cm -3 to 5e18 cm-3 for the p-GaN growth conditions. Oxygen spikes with concentrations ~1e17 cm -3 were observed at the regrowth interfaces. Carbon impurity levels did not spike at the regrowth interfaces under either set of growth conditions. We have correlated the effects of these interfacial impurities with the reverse leakage current and breakdown voltage of regrown m-plane p-n junctions.

42 ENGINEERING↗
DOE OSTI2017

Liquefied gas electrolytes for electrochemical energy storage devices

Electrochemical capacitors and lithium-ion batteries have seen little change in their electrolyte chemistry since their commercialization, which has limited improvements in device performance. Combining superior physical and chemical properties and a high dielectric-fluidity factor, the use of electrolytes based on solvent systems that exclusively use components that are typically gaseous under standard conditions show a wide potential window of stability and excellent performance over an extended temperature range. Electrochemical capacitors using difluoromethane show outstanding performance from –78° to +65°C, with an increased operation voltage. The use of fluoromethane shows a high coulombic efficiency of ~97% for cycling lithium metal anodes, together with good cyclability of a 4-volt lithium cobalt oxide cathode and operation as low as –60°C, with excellent capacity retention.

Science & Technology - Other Topics↗
DOE OSTI2016

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A Modular and Flexible High-Frequency-Link Transformer with a Reduced Device Count and Zero High-Side Devices

In general, large power transformers (LPTs) are not interchangeable with each other and their high costs prohibit extensive spare inventories more so considering that on an average only 1.3 LPTs are manufactured for individual design. The latter pose a further challenge since given that the several existing LPTs are reaching their end of service lives, loss of plurality of such LPTs, that form the backbone of U.S. power grid, will clearly run into the problem of energy security related to the non-availability of sufficient spares (and extended lead time) exacerbated further by the fact that these spares are not interchangeable for installations at different locations. Conventional LPT cost millions of dollars and weighs significantly between approximately 100 and 400 tons. Two raw materials—copper and electrical steel—account for over 50 percent of the total cost of an LPT. In recent years, the price volatility of these two commodities in the global market has affected the manufacturing conditions and procurement strategy for LPTs. Transportation is also an important element of the total LPT cost, because an LPT can weigh significantly and often requires long-distance transport. Transporting an LPT is challenging—its large dimensions and heavy weight pose unique requirements to ensure safe and efficient transportation. Current road, rail, and port conditions are such that transportation is taking more time and becoming more expensive. Conventional low-frequency LPTs typically follow a monolithic approach to design due to historical reasons that need to transition to more modular and flexible (e.g., in voltage, impedance, and power flow) designs with ability to seamlessly/near-seamlessly scale. They should also have the ability to incorporate new technologies without in all cases redoing a LPT design from scratch. Given that the cost of raw materials has continued to increase, next-generation LPTs need to pursue avenues for reducing these costs. An added necessity is to reduce the transportability cost, which is significant in conventional LPTs. Further, given that LPTs are for the long term, they need to be durable, efficient, and fault tolerant with overloading capability. Given this backdrop, the objective and accomplishment of this one-year DOE (SPONSOR) R&D project, led by small business NextWatt LLC (PRIME, Lead PI: Dr. Sudip K. Mazumder) and University of Arkansas at Fayetteville (SUBAWARDEE, PI: Dr. Juan Balda) were to explore the design of a (8 – 20 kHz) high-frequency-link (HFL) based 100-MVA LPT with nominal voltage of 115/69 kV, with $15 - $22 dollars US per kVA when manufactured in “moderate” volume, with 99% energy-conversion efficiency, with 300% reduction in both volume and weight compared to a conventional LPT with the same electrical ratings, with impedance variation greater than 5%, with direct AC/AC power conversion capability, with very-high energy-conversion efficiency (using wide-bandgap SiC based field effect MOSFET devices) over a wide operating temperature, with reduction in both volume and weight with regard to conventional low frequency LPT, and with significant reduction in number of devices compared to state of the art solid state transformer topology.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1933

Wind tunnel research comparing lateral control devices, particularly at high angles of attack X : various control devices on a wing with a fixed auxiliary airfoil

Results are given of a series of systemic tests comparing lateral control devices with particular reference to their effectiveness at high angles of attack. These tests were made with two sizes of ordinary ailerons and different sizes of spoilers on a Clark Y wing model having a narrow auxiliary airfoil fixed ahead and above the leading edge, the chords of the main and auxiliary airfoils being parallel. In addition, the auxiliary airfoil itself was given angular deflection. The purpose was to provide rolling moments for lateral control. The tests were made in a 7 by 10 foot wind tunnel. They included both force and rotation tests to show the effect of the devices on the lift and drag characteristics of the wing and on the lateral stability characteristics, as well as lateral control. They showed that none of the aileron arrangements tried would give rolling control of an assumed satisfactory value at all angles of attack up to the stall. However, they would give satisfactory values, but at the expense of abnormally high deflections and very heavy hinge moments. The most effective combination of ailerons and spoilers gave satisfactory values of rolling moment at angles of attack below the stall, and the values did not fall off as rapidly above the stall as with ailerons alone. With an arrangement of this type having the proper relative proportions and linkage, it should be possible to obtain reasonably satisfactory yawing moments and control forces. Deflecting one-half of the auxiliary airfoil downward for the purpose of control gave strong favorable yawing moments at all angles of attack, but gave very small rolling moments at the low angles of attack.

Weick, Fred E↗
NASA NTRS2004

Measurement of Device Parameters Using Image Recovery Techniques in Large-Scale IC Devices

Devices that respond to radiation on a cell level will produce histograms showing the relative frequency of cell damage as a function of damage. The measured distribution is the convolution of distributions from radiation responses, measurement noise, and manufacturing parameters. A method of extracting device characteristics and parameters from measured distributions via mathematical and image subtraction techniques is described.

radiation↗
NASA NTRS2012

Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.

Akturk, Akin↗
DOE OSTI2016

Axial flow heat exchanger devices and methods for heat transfer using axial flow devices

Systems and methods described herein are directed to rotary heat exchangers configured to transfer heat to a heat transfer medium flowing in substantially axial direction within the heat exchangers. Exemplary heat exchangers include a heat conducting structure which is configured to be in thermal contact with a thermal load or a thermal sink, and a heat transfer structure rotatably coupled to the heat conducting structure to form a gap region between the heat conducting structure and the heat transfer structure, the heat transfer structure being configured to rotate during operation of the device. In example devices heat may be transferred across the gap region from a heated axial flow of the heat transfer medium to a cool stationary heat conducting structure, or from a heated stationary conducting structure to a cool axial flow of the heat transfer medium.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2018

Axial flow heat exchanger devices and methods for heat transfer using axial flow devices

Systems and methods described herein are directed to rotary heat exchangers configured to transfer heat to a heat transfer medium flowing in substantially axial direction within the heat exchangers. Exemplary heat exchangers include a heat conducting structure which is configured to be in thermal contact with a thermal load or a thermal sink, and a heat transfer structure rotatably coupled to the heat conducting structure to form a gap region between the heat conducting structure and the heat transfer structure, the heat transfer structure being configured to rotate during operation of the device and flow a heat transfer medium in a substantially axial direction through the heat transfer structure. In example devices heat may be transferred across the gap region from a heated axial flow of the heat transfer medium to a cool stationary heat conducting structure, or from a heated stationary conducting structure to a cool axial flow of the heat transfer medium.

42 ENGINEERING↗
DOE OSTI2017

Efficacy of an acoustic hailing device as an avian dispersal tool

Bird strikes are a major safety and financial concern for modern aviation. Audible stimuli are common bird dispersal techniques, but their effectiveness is limited by the saliency and relevance of the stimulus. Furthermore, high ambient sound levels present at airfields might require that effective audible stimuli rely more on total volume (i.e., exceeding physiological tolerances) than ecological relevance. Acoustic hailing devices (AHD) are capable of sound output with a narrow beam width and at volumes high enough to cause physical discomfort at long distances. We tested the effectiveness of an AHD as a dispersal tool on free-ranging birds recognized as hazardous to aviation safety at the Savannah River Site and Phinizy Swamp Nature Park in South Carolina and Georgia, respectively. Our study design included experimental trials with timed-interval counts of birds directly before and after AHD treatment. For most species, counts of birds associated with treatment periods (use of AHD) and control periods (no use of AHD) occurred on different days. Sound treatments yielded variable success at dispersing birds. Specifically, AHD treatment was effective for dispersing vultures (Coragyps atratus and Cathartes aura) and gulls (Laridae), and ineffective for dispersing blackbirds (Icteridae), diving ducks (Aythya, Bucephala, Oxyura), and coots (Fulica americana). These trials were conducted in a relatively quiet environment with birds that were unhabituated to excessive noise, and thus we cannot unequivocally recommend an AHD as a universally effective avian dispersing tool. Furthermore, future research should consider AHD testing integrated with other methods, as well as investigation of treatments that might be salient to specific target species.

60 APPLIED LIFE SCIENCES↗