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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Frequency noise measurement of diode-pumped Nd:YAG ring lasers

The combined frequency noise spectrum of two model 120-01A nonplanar ring oscillator lasers was measured by first heterodyne detecting the IF signal and then measuring the IF frequency noise using an RF frequency discriminator. The results indicated the presence of a 1/f-squared noise component in the power-spectral density of the frequency fluctuations between 1 Hz and 1 kHz. After incorporating this 1/f-squared into the analysis of the optical phase tracking loop, the measured phase error variance closely matches the theoretical predictions.

Chen, Chien-Chung↗
NASA NTRS2007

NASA Tech Briefs, May 2007

Topics include: Noise-Canceling Helmet Audio System; Program Analyzes Spacecraft/Ground Radio Links; Two-Way Communication Using RFID Equipment and Techniques; Six-Message Electromechanical Display System; Scanning Terahertz Heterodyne Imaging Systems; Master Clock and Time-Signal-Distribution System; Synchronous Phase-Resolving Flash Range Imaging; Integrated Radial Probe Transition From MMIC to Waveguide; Bar-Code System for a Microbiological Laboratory; MMIC Amplifier Produces Gain of 10 dB at 235 GHz; Mapping Nearby Terrain in 3D by Use of a Grid of Laser Spots; Digital Beam Deflectors Based Partly on Liquid Crystals; Narrow-Band WGM Optical Filters With Tunable FSRs; Better Finite-Element Analysis of Composite Shell Structures; Computing Spacecraft-Pointing Vectors for Limb Tracking; Enhanced Master Controller Unit Tester; Rover Graphical Simulator; Increasing Durability of Flame-Sprayed Strain Gauges; Multifunctional, High-Temperature Nanocomposites; Multilayer Impregnated Fibrous Thermal Insulation Tiles; Radiation-Shielding Polymer/Soil Composites; Film/Adhesive Processing Module for Fiber-Placement Processing of Composites; Fabrication of Submillimeter Axisymmetric Optical Components; Electrochemical Disposal of Hydrazines in Water; Statistical Model of Evaporating Multicomponent Fuel Drops; Resistively Heated SiC Nozzle for Generating Molecular Beams; Compact Packaging of Photonic Millimeter-Wave Receiver; Diffractive Combiner of Single-Mode Pump Laser-Diode Beams; Wide-Band, High-Quantum-Efficiency Photodetector; A Robustly Stabilizing Model Predictive Control Algorithm; Modeling Evaporation of Drops of Different Kerosenes; Development of Vapor-Phase Catalytic Ammonia Removal System; Several Developments in Space Tethers; Design Concept for a Nuclear Reactor-Powered Mars Rover; Formation-Initialization Algorithm for N Spacecraft; and DNSs of Multicomponent Gaseous and Drop-Laden Mixing Layers Achieving Transition to Turbulence.

Source record↗
NASA NTRS1976

A model for polar cap electric fields

A model is proposed relating polar cap ionospheric electric fields to the parameters of the solar wind near the orbit of the earth. The model ignores the notion of field line merging. An essential feature is the role played by velocity shear instabilities in regions of the outer magnetosphere, in which mapping of the magnetosheath electric field would produce sunward convection. The anomalous resistivity which arises from velocity shear turbulence, suffices to essentially disconnect the magnetosphere from the magnetosheath, at any place where that resistivity is large enough. The magnetosheath-magnetosphere system, as a consequence, acts as a kind of diode or rectifier for the magnetosheath electric fields. Predictions of the model are compared with several observations related to polar cap convection.

Dangelo, N.↗
NASA NTRS1989

Mathematical optimization of photovoltaic converters for diode lasers

The mathematical optimization of vertical-junction photovoltaic converters for use with diode laser arrays supplying powers up to 1 MW is discussed. Photovoltaic parameters were optimized using a mathematical model. The optimized converters have 500 single junctions connected in series. The efficiency varies from 41 percent for a 0.73-micron diode laser to 46 percent for a 0.83-micron diode laser. The optimum width of the single-junction converter is small, 3.0 microns, in order for the p-n junction to be within a diffusion length of the light-generated carriers. Another critical parameter is the series resistance; the optimum value of 0.001 ohms should be achievable. Another critical parameter is the donor carrier concentration, for which an optimum value of 5 x 10 to the 15th carriers/cu cm has been chosen.

Walker, Gilbert H.↗
NASA NTRS1992

A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

A theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes is presented. The model describes the traps and the trap characteristics: concentration, energy level, and capture cross sections. We have observed that the above two types of diodes differ in the voltage dependence of the trap-assisted tunneling current and dynamic resistance. Our model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated DC characteristics of the photodiodes (for medium and high reverse bias and for temperatures from 65 to 140 K) supports the validity of the model.

Rosenfeld, David↗
NASA NTRS1992

One joule per Q-switched pulse diode-pumped laser

Q-switched 1-J output has been achieved from diode-pumped zig-zag Nd:YAG slabs in an oscillator-amplifier configuration. The oscillator was single transverse and longitudinal model. This laser set records for Q-switched energy per pulse, and for average power from a diode-pumped laser. The laser was constructed in a rugged configuration suitable for routine laboratory use.

Holder, Lonnie E.↗
NASA NTRS1976

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 ohm-cm silicon solar cells

An experimental method is presented that can be used to interpret the relative roles of bandgap narrowing and recombination processes in the diffused layer. This method involves measuring the device time constant by open-circuit voltage decay and the base region diffusion length by X-ray excitation. A unique illuminated diode method is used to obtain the diode saturation current. These data are interpreted using a simple model to determine individually the minority carrier lifetime and the excess charge. These parameters are then used to infer the relative importance of bandgap narrowing and recombination processes in the diffused layer.

Godlewski, M. P.↗
NASA NTRS1979

GaAs solar cell development

The four (AlGa)As-GaAs solar cells were fabricated and will be delivered for radiation damage testing using 1 MeV electrons. These cells were LPE grown at 700 C for 4 minutes. The junction depth was measured to be 0.3 micron using a secondary electron microscope. The radiation model for the shallow junction cells was verified. Some mesa diodes were also fabricated and will be irradiated along with the cells for parallel evaluations of their electrical characteristics.

Source record↗
NASA NTRS1991

Laser beam modeling in optical storage systems

A computer model has been developed that simulates light propagating through an optical data storage system. A model of a laser beam that originates at a laser diode, propagates through an optical system, interacts with a optical disk, reflects back from the optical disk into the system, and propagates to data and servo detectors is discussed.

Treptau, J. P.↗
NASA NTRS1992

Quasi-optical antenna-mixer-array design for terahertz frequencies

A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.

Guo, Yong↗
NASA NTRS1980

Three dimensional space charge model for large high voltage satellites

High power solar arrays for satellite power systems with dimensions of kilometers, and with tens of kilovolts distributed over their surface face many plasma interaction problems that must be properly anticipated. In most cases, the effects cannot be adequately modeled without detailed knowledge of the plasma sheath structure and space charge effects. Two computer programs were developed to provide fully self consistent plasma sheath models in three dimensions as a result of efforts to model the experimental plasma sheath studies at NASA/JSC. Preliminary results indicate that for the conditions considered, the Child-Langmuir diode theory can provide a useful estimate of the plasma sheath thickness. The limitations of this conclusion are discussed. Some of the models presented exhibit the strong ion focusing observed in the JSC experiments.

Cooks, D.↗
NASA NTRS1992

A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

This paper presents a theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes. The model describes the connection between the leakage current associated with the traps and the trap characteristics: concentration, energy level, and capture cross sections. It is observed that the above two types of diodes differ the voltage dependence of the trap-assisted tunneling current and dynamic resistance. The model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated dc characteristics of the photodiodes supports the validity of the model.

Rosenfeld, David↗
NASA NTRS2004

THz semiconductor-based front-end receiver technology for space applications

Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

Schottky diode multipliers↗
NASA NTRS1980

Projected noise in submillimeter-wave mixers with InSb Schottky diodes

The reduction of the equivalent noise temperature in liquid-nitrogen-cooled submillimeter-wave mixers by the use of Schottky barriers on InSb instead of GaAs is evaluated by an analytical model that assumes limited local oscillator power and matched impedances. The calculations, executed at 1.0 and 1.8 THz, take plasma resonance and skin effect into account. For single and multiple contacts on homogeneous semiconductor materials of optimum doping, the noise of InSb diodes is smaller than that of GaAs diodes by a factor of 3 to 14. A simplified model is used to predict the performance of epitaxial structures as well as alternative materials.

Lieneweg, U.↗
NASA NTRS1992

Rectenna thermal model development

Deploying rectennas in space requires adapting existing designs developed for terrestrial applications to the space environment. One of the major issues in doing so is to understand the thermal performance of existing designs in the space environment. Toward that end, a 3D rectenna thermal model has been developed, which involves analyzing shorted rectenna elements and finite size rectenna element arrays. A shorted rectenna element is a single element whose ends are connected together by a material of negligible thermal resistance. A shorted element is a good approximation to a central element of a large array. This model has been applied to Brown's 2.45 GHz rectenna design. Results indicate that Brown's rectenna requires redesign or some means of enhancing the heat dissipation in order for the diode temperature to be maintained below 200 C above an output power density of 620 W/sq.m. The model developed in this paper is very general and can be used for the analysis and design of any type of rectenna design of any frequency.

Kadiramangalam, Murall↗
NASA NTRS1977

Status of research on advanced thermionic converters

It is shown that it is possible to controllably and continuously elevate the electron temperature in the plasmatron thermionic energy converter from the emitter temperature to the maintenance electron temperature for the diode arc mode. This ability and the apparent validity of an elementary analytical model of the plasma should make possible the optimization and evaluation of operation under strong ionization conditions for which the plasma resistance should be acceptably low. Measurement of the vacuum space charge arising from the emission from a surface in cesium vapor indicates the presence of a substantial negative ion emission current. Apparatus has been constructed for identifying and directly measuring the flux of positive, negative and neutral species emitted from an electrode surface in a cesium vapor diode. The primary purpose of the investigation is to determine the influence of negative ion emission on the effective work function of thermionic converter electrodes. Initial data indicate the presence of H(-), Cs(-) and possibly C(-) and CH(-).

Hatch, G. L.↗