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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

High-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes

Lanthanum-hexaboride electrodes in 1700 K cesium diodes may triple power outputs compared with those demonstrated for nuclear thermionic space applications. Still greater relative gains seem possible for emitters below 1700 K. Further improvements in cesium-diode performance should result from the lower collector temperatures allowed for earth and low-power-space duties. Decreased temperatures will lessen thermal-transport losses that attend thermionic-conversion mechanisms. Such advantages will add to those from collector-Carnot and electrode effects. If plasma ignition difficulties impede diode temperature reductions, recycling small fractions of the output power could provide ionization. So high-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes appear feasible.

Morris, J. F.↗
NASA NTRS1976

Diode pumped Nd:YAG laser development

A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

Reno, C. W.↗
NASA NTRS1977

Parametric Performance of a Spiral-Artery, Liquid-Trap-Diode Heat Pipe

A series of parametric investigations are described which determine the effect of various fluid charges on the performance of a 0.635-cm-diam spiral-artery, liquid-trap diode in both the forward and reverse modes. Specific parameters such as forward- and reverse-mode conductances, shutdown times and energies, and recovery to forward-model operation, are evaluated for ethane as a working fluid in the temperature range 170 K to 220 K. Results indicate that the heat pipe will not reliably start up in the forward mode. However, startup can be initiated when preceded by a diode reversal. Also included are data which show the susceptibility of the diode to fluid charge and tilt. The optimum fluid charge was found to be 2.67 g and transport capability at this charge was in excess of 1200 W-cm at 200 K. The diode in the reverse mode exhibited a rapid shutdown (within 9 min) with a shutdown energy of 1150 J (0.32 Wh).

Williams, R. J.↗
NASA NTRS1978

Investigation of a cryogenic thermal diode

This paper describes a series of parametric investigations to determine the effect of various fluid charges on the performance of a 0.635-cm-diameter spiral-artery, liquid-trap diode in both the forward and reverse modes. Specific parameters such as forward- and reverse-mode conductances, shutdown times and energies, and recovery to forward-mode operation, are evaluated for ethane as a working fluid in the temperature range 170 K to 220 K. Results indicate that the heat pipe will not reliably start up in the forward mode. However, startup can be initiated when preceded by a diode reversal. Also concluded are data which show the susceptibility of the diode to fluid charge and tilt. The optimum fluid charge was found to be 2.67 g, and transport capability at this charge was in excess of 1200 W-cm at 200 K. The diode in the reverse mode exhibited a rapid shutdown (within 9 min) with a shutdown energy of 1150 J (0.32 Wh).

Williams, R. J.↗
NASA NTRS1979

Cryogenic thermal diode heat pipes

The development of spiral artery cryogenic thermal diode heat pipes was continued. Ethane was the working fluid and stainless steel the heat pipe material in all cases. The major tasks included: (1) building a liquid blockage (blocking orifice) thermal diode suitable for the HEPP space flight experiment; (2) building a liquid trap thermal diode engineering model; (3) retesting the original liquid blockage engineering model, and (4) investigating the startup dynamics of artery cryogenic thermal diodes. An experimental investigation was also conducted into the wetting characteristics of ethane/stainless steel systems using a specially constructed chamber that permitted in situ observations.

Alario, J.↗
NASA NTRS1979

Shot-noise in resistive-diode mixers and the attenuator noise model

The representation of a pumped exponential diode, operating as a mixer, by an equivalent lossy network, is reexamined. It is shown that the model is correct provided the network has ports for all sideband frequencies at which (real) power flow can occur between the diode and its embedding. The temperature of the equivalent network is eta/2 times the physical temperature of the diode. The model is valid only if the series resistance and nonlinear capacitance of the diode are negligible. Expressions are derived for the input and output noise temperature and the noise-temperature ratio of ideal mixers. Some common beliefs concerning noise-figure and noise-temperature ratio are shown to be incorrect.

Kerr, A. R.↗
NASA NTRS1979

Application of tunable diode lasers as local oscillators in an Infrared Heterodyne Radiometer (IHR)

The utility of diode lasers as local oscillators (LOs) in a heterodyne receiver application was investigated. The CW power, spectral tunability, spectral stability, and spatial intensity distribution of the TDL outputs were measured. A tunable diode laser LO was incorporated into a laboratory Dicke-switched infrared heterodyne setup and used to measure radiometer sensitivity as well as spectroscopic characteristics of selected absorption lines of ammonia. The test results on one of the two tunable diode lasers are emphasized in an attempt to provide a comprehensive data package which may be useful for future planning purposes. The second tunable diode laser exhibits characteristics similar to the fully tested TDL with the exception that some changes in its performance characteristics as it was temperature cycled between room temperature and the operating temperature of approximately 50K occurred.

Savage, M. G.↗
NASA NTRS1981

Simple cryogenic temperature regulator - The Zener diode

For obtaining optimum performance from cooled infrared detectors used in astronomy, it is often necessary to operate the preamplifier transistor (usually a JFET) at a higher temperature than that provided by the cryogen. Various means of elevating the temperature of the FET above the temperature of its environment are considered. A description is presented of a method which uses a 10 V Zener diode (actually an avalanche diode) as a self-stabilizing heater element. The diode is mounted in good thermal contact with the FET, and both are isolated from the work surface by a link of poor conductivity. The diode is driven by a stable, constant voltage power supply.

Storey, J. W. V.↗
NASA NTRS1981

Trimming epitaxial GaAs Schottky-diode parameters via anodic oxidation

Present day receivers operating at millimeter and sub-millimeter wavelengths most often rely, for their first mixers, on Schottky-barrier diodes formed on epitaxial GaAs. Crucial parameters for these diodes are breakdown voltage, series resistance, junction capacitance and forward conduction mechanism. Some of these are improved, others impaired, by change of epitaxy thickness. This paper describes experience with optimizing GaAs Schottky-diode parameters by anodic oxidation thinning of GaAs epitaxial layers. Monitoring of breakdown voltage of epitaxial GaAs in anodic oxidation solution provides indication of when thinning should be stopped in subjection to the breakdown voltage specification of diodes to be made from the material. Mixer and frequency-multiplier performance superior to any previously reported have been achieved by this technique.

Siegel, C. M.↗
NASA NTRS1981

Excess noise in tunable diode lasers

The method and the apparatus for identifying excess-noise regions in tunable diode lasers are described. These diode lasers exhibit regions of excess noise as their wavelength is tuned. If a tunable diode laser is to be used as a local oscillator in a superheterodyne optical receiver, these excess-noise regions severely degrade the performance of the receiver. Measurement results for several tunable diode lasers are given. These results indicate that excess noise is not necessarily associated with a particular wavelength, and that it is possible to select temperature and injection current such that the most ideal performance is achieved.

Rowland, C. W.↗
NASA NTRS1984

Deep diode arrays for X-ray detection

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Zemel, J. N.↗
NASA NTRS1984

The 20 GHz solid state transmitter design, impatt diode development and reliability assessment

A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were developed. The IMPATT diode reliability was assessed. A proof of concept solid state transmitter design and a technology assessment study were performed. The transmitter design utilizes technology which, upon implementation, will demonstrate readiness for development of a POC model within the 1982 time frame and will provide an information base for flight hardware capable of deployment in a 1985 to 1990 demonstrational 30/20 GHz satellite communication system. Life test data for Schottky barrier GaAs diodes and grown junction GaAs diodes are described. The results demonstrate the viability of GaAs IMPATTs as high performance, reliable RF power sources which, based on the recommendation made herein, will surpass device reliability requirements consistent with a ten year spaceborne solid state power amplifier mission.

Picone, S.↗
NASA NTRS1987

Diode Structure for Microwave and Infrared Applications

Microwave signals switched or modulated optically. Planar diode with transparent cathode made in BaAs, Si, and InSb versions. Depending on specific configuration and material, such diode used for optical modulation of microwave signal or as infrared detector. Transparent cathode fabricated on GaAs diode so diode illuminates to generate and control short-circuit current.

Alcorn, George↗
NASA NTRS1987

Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature

A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.

Brown, E. R.↗
NASA NTRS1987

Grating rhomb diode laser power combiner

A compact device for spectrally combining many laser-diode beams into a single multi-wavelength beam has been developed for use in NASA's intersatellite communications programs. The prototype device combines seven 30 milliwatt beams into a single beam with 70 percent efficiency producing an output of approximately 150 milliwatts. All beams are coaxial and can be collimated with a single transmitter optical system. The combining technique is relatively insensitive to drifts in the laser-diode wavelength and provides both increased power output and laser-diode source redundancy. Combination of more than 100 laser-diodes producing an output greater than 5 watts appears feasible with this technique.

Minott, Peter O.↗
NASA NTRS1989

BIN Diode For Submillimeter Wavelengths

Diode formed by selective doping during epitaxial growth, starting with semi-insulating substrate. Use of high-mobility semiconductors like GaAs extends cutoff frequency. Either molecular-beam epitaxy (MBE) or organometallic chemical-vapor deposition used to form layers of diode. Planar growth process permits subsequent fabrication of arrays of diodes by standard photolithographic techniques, to achieve quasi-optical coupling of submillimeter radiation. Useful for generation of harmonics or heterodyne mixing in receivers for atmospheric and space spectroscopy operating at millimeter and submillimeter wavelengths. Used as frequency doublers or triplers, diodes of new type extend frequency range of present solid-state oscillators.

Maserjian, J.↗
NASA NTRS1988

Diode-pumped laser research

The Laboratory for Oceans is currently working on the development of compact laser diode array (LD) pumped Nd:YAG lasers for use in space-based altimetry and ranging. Laser diode-array pumping technology promises to increase the electrical to optical efficiency of solid state lasers by an order of magnitude with a lifetime increase of nearly three orders of magnitude relative to today's conventional flashlamp-pumped laser systems. The small size, efficiency, and ruggedness make LD-pumped solid state lasers ideal for space based applications. In an in-house RTOP effort, a novel multiple-pass LD-pumped Nd:YAG laser amplifier was designed and tested to increase the 100 microjoule output pulse energy of the Lightwave laser oscillator. Preliminary results have yielded a round trip amplifier gain of about 15 percent using 7 microjoule LD-pump energy. As a parallel activity, funding was recently obtained to investigate the possible use of custom made fiber optic arrays to obtain an efficient optical coupling mechanism between the emitting laser diode-arrays and the target solid state laser material. Fiber optic coupling arrays would allow for the easy manipulation of the spatial emitting pattern of the diode pump sources to match either an end or side pumping laser configuration.

Ramos-Izquierdo, L.↗
NASA NTRS1988

Laboratory diode laser spectroscopy in molecular planetary astronomy

Infrared spectroscopy of planetary atmospheres is performed at high spectral resolution comparable to that in the laboratory. This requires that laboratory spectroscopy use the highest resolution and the most accurate techniques. Tunable diode laser spectroscopy can supply many of the spectroscopic parameters needed by astronomers. In particular, line positions, line strengths, and collisional line widths are measured with diode lasers, and these are often among the best values available. Diode laser spectra are complimentary to lower resolution, broader-coverage Fourier transform spectra. Certain procedures must be adopted, however, when using diode lasers, for determining their output characteristics and for calibrating each spectrum against quality references.

Jennings, D. E.↗