Combined doping and geometry effects on transferred-electron bulk instabilities
Transferred electron bulk negative differential conductivity devices, analyzing combined doping and geometry effects on space charge and domain dynamics
Rabson, T. A.↗
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Carbene Functionalization of Monolayer Tungsten Disulfide for Enhanced Quantum Emission
Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising materials for an array of applications, ranging from conventional field-effect transistors, photodetectors, and light-emitting diodes to their more recent use in quantum photonic technologies. Chemical functionalization of 2D TMDs with organic ligands and adlayers provides an additional means for customizing their electronic and optical properties. While many pathways have been reported for the chemical functionalization of 2D TMDs, their frequent reliance on solution-based methods results in limited control over adlayer thickness and coverage, thus hindering utility in high-performance applications. Here, in this study, we describe the vapor-phase functionalization of a 2D TMD with carbene ligands, specifically tungsten disulfide (WS 2 ) with N-heterocyclic carbenes (NHCs), resulting in molecularly smooth, thin, and uniform adlayers. Reacting NHCs with monolayer WS 2 reduces the broad photoluminescence background observed at cryogenic temperatures by 58%, which facilitates the detection of single-photon emitters from strained monolayer WS 2 , as indicated by second order correlation values ( g (2) ) as low as 0.17 ± 0.07. Chemical characterization coupled with density functional theory calculations suggests that the NHC adlayer has a dual defect-passivation and doping effect on monolayer WS 2 that results in enhanced single-photon emission. Overall, this study establishes vapor-phase carbene functionalization as a homogeneous surface modification scheme for tailoring the quantum emission properties of semiconducting 2D TMDs.
N-heterocyclic carbenes↗
Effects of trapped charge on the signal formation and detection efficiency for subsequent pulses in irradiated silicon sensors
Envisaged high energy physics experiments like the Future Circular Collider require unprecedented radiation hardness of the detectors, as well as short readout time due to high luminosity and occupancy. Silicon has proven to be extremely radiation hard. Sufficient signals can be recorded even at fluences close to 1 ∙ 1 0 16 n e q / cm 2 . Here, the signal formation was studied in silicon strip sensors, irradiated and annealed until the phenomenon of charge multiplication occurred. ATLAS12EC R0 mini sensors were tested by means of edge TCT measurements at temperatures around –20 °C. It was observed that the detection of subsequent signals separated up to several microseconds is altered by the charge trapped during the preceding pulses. The effects of trapped charge on the electrical configuration of a sensor are well known as a polarization or pumping effect in larger band-gap materials like diamond, but is often neglected for silicon at this relatively high temperature. The investigation of the effect created by trapped charges in silicon sensors using subsequent pulses allows to gain information on important parameters such as de-trapping times. Furthermore, it shows a severe impact on the sensor performance in a pile-up scenario. The irradiation fluence and hence the effective doping concentration, the temperature and the amount of initially created charge have a large impact on this phenomenon. The measurements presented help to characterize this phenomenon; particular attention was paid to the application point of view.
47 OTHER INSTRUMENTATION↗
Tuning Optical and Electrical Properties of Vanadium Oxide with Topochemical Reduction and Substitutional Tin
Vanadium oxides are widely tunable materials, with many thermodynamically stable phases suitable for applications spanning catalysis to neuromorphic computing. The stability of vanadium in a range of oxidation states enables mixed-valence polymorphs of kinetically accessible metastable materials. Low-temperature synthetic routes to, and the properties of, these metastable materials are poorly understood and may unlock new optoelectronic and magnetic functionalities for expanded applications. In this work, we demonstrate topochemical reduction of α-V 2 O 5 to produce metastable vanadium oxide phases with tunable oxygen vacancies (>6%) and simultaneous substitutional tin incorporation (>3.5%). The chemistry is carried out at low temperature (65 °C) with solution-phase SnCl 2 , where Sn 2+ is oxidized to Sn 4+ as V 5+ sites are reduced to V 4+ during oxygen vacancy formation. Despite high oxygen vacancy and tin concentrations, the transformations are topochemical in that the symmetry of the parent crystal remains intact, although the unit cell expands. Band structure calculations show that these vacancies contribute electrons to the lattice, whereas substitutional tin contributes holes, yielding a compensation doping effect and control over the electronic properties. The SnCl 2 redox chemistry is effective on both solution-processed V 2 O 5 nanoparticle inks and mesoporous films cast from untreated inks, enabling versatile routes toward functional films with tunable optical and electronic properties. The electrical conductance rises concomitantly with the SnCl 2 concentration and treatment time, indicating a net increase in density of free electrons in the host lattice. This work provides a valuable demonstration of kinetic tailoring of electronic properties of vanadium–oxygen systems through top-down chemical manipulation from known thermodynamic phases.
36 MATERIALS SCIENCE↗
Boosting Tin Perovskite Solar Cell Performance via Light-Induced Interface Doping
Continuous breakthroughs have been achieved in the photoelectric conversion efficiency (PCE) of tin-based perovskite solar cells (TPSCs) in recent years. Inspired by performance improvements observed during device storage, we identified beneficial light-induced interface doping (LIID) in the TPSCs. In situ analyses using X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy reveal that ion migration and oxidation at the interface induce beneficial doping effects, enhancing carrier transport and significantly boosting device performance. By implementing specific illumination techniques or maximum power point tracking (MPPT) methods to achieve LIID, we increased the open-circuit voltage while maintaining a high short-circuit current, reaching a PCE of up to 14.91%. Furthermore, this efficiency was sustained at 70% of its maximum value after nearly 900 h of continuous operation. Our study introduces a novel approach to addressing energy band mismatch, paving the way for improved efficiency in tin-based perovskite solar cells.
Sun, Mulin↗
Electrochemical Removal of Se(IV) from Wastewater Using RuO2‑Based Catalysts
The removal of selenite (SeO32-) from water is challenging due to the risk of secondary pollutants. To address this, we developed RuO2-based nanocatalysts on the titanium plate (RuO2/TP) for direct electrochemical reduction of Se(IV) to elemental selenium [Se(0)]. Optimizing Sn doping in RuO2 nanoparticles to induce charge redistribution enabled the Ru0.9Sn0.1Ox/TP catalyst to achieve ∼90% Se(IV) removal across concentrations of 0.1, 1, and 10 mM at -2 mA cm-2 over 8 h, outperforming undoped RuO2/TP. Furthermore, Ru0.9Sn0.1Ox/TP also maintained ∼90% removal efficiency in 1 mM of Se(IV) solutions containing competitive anions (0.5 M Cl-, 0.1 M SO42-, 0.01 M NO3-, and their mixtures), demonstrating suitability for complex wastewater treatment. Importantly, the catalysts were recyclable, with no observable contamination introduced into the solution. Density functional theory (DFT) calculations suggest that Sn doping effectively reduces the energy barrier for the reduction of Se(IV) to Se(0).
Hao, Shaoyun↗
Unveiling the Degradation Mechanism of High-Temperature Superconductor Bi 2 Sr 2 CaCu 2 O 8+δ in Water-Bearing Environments
We report the physical properties of copper oxide high-temperature superconductors have been studied extensively, such as its band structure, and doping effects of Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212). However, some chemical-related properties of these superconductors are rarely reported, such as their stability in air. Here, we report experiments combined with ab initio calculations that address the effects of water in contact with Bi-2212. The evolution of Bi-2212 flake with exposure to water for different time intervals were tested and characterized by optical microscopy (OM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM) and electrical measurements. The thickness of Bi-2212 flakes is gradually decreased in water, and some thin flakes can be completely etched away after a few days. The stability of Bi-2212 in other solvents is also evaluated, including alcohol, acetone, HCl and KOH. The morphology of Bi-2212 flakes is relatively stable in organic solvents. However, the flakes are etched relatively quick in HCl and KOH, especially in acidic environment. Our results imply that hydrogen ion is primarily responsible for the deterioration of their properties. Both TEM and calculation results demonstrate that the atoms in Bi-O plane is relatively stable when compared to the inner atoms in Sr-O, Ca-O and Cu-O planes. This work contributes towards understanding the chemical stability of Bi-2212 superconducting device in environmental medium, which is important for both fundamental studies and practical applications of copper oxide high-temperature superconductors.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Charge Carrier and Spin Diffusion in a Polycrystalline and Single Crystal Lead Halide Perovskite Semiconductor
The directed movement of spin-bearing excitations in semiconductors can enable many potential schemes for spintronic applications. Understanding the mechanism of spin motion, as opposed to charge carrier or exciton motion, may require specialized techniques and sample conditions. Here we employ the noncontact and time-resolved technique of light-induced transient grating spectroscopy (LITG) to measure both carrier and spin motion in a perovskite semiconductor with varying crystallinity. The carrier motion aligns with expectations from past studies undertaken at low fluence, revealing an ambipolar diffusion coefficient on the order of 1 cm 2 /sec and diffusion length of roughly 1.5 μm for single crystals that is strongly attenuated as crystallite size decreases. The spin diffusion is measured with cross-polarized excitation beams and uncovers an intensity-dependent coefficient rising above 100 cm 2 /sec. The fast room-temperature spin relaxation limits the spin diffusion length, but the remarkable speedup of spin over carrier diffusion suggests a mechanism involving a combination of exchange-mediated and doping effects that enhance spin transport.
14 SOLAR ENERGY↗
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers
Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. In this work, we report the fabrication and characterization of high-resolution Schottky barrier radiation detectors on 250 μm thick n-type 4H-SiC epitaxial layers, the highest reported thickness to date. Several 8 × 8 mm 2 detectors were fabricated from a diced 100 mm diameter 4H-SiC epitaxial wafer grown on a conductive 4H-SiC substrate with a mean micropipe density of 0.11 cm -2 From the Mott–Schottky plots, the effective doping concentration was found to be in the range (0.95–1.85) × 10 14 cm -3 , implying that full depletion could be achieved at ~5.7 kV (0.5 MV/cm at the interface). The current-voltage characteristics demonstrated consistently low leakage current densities of 1–3 nA/cm 2 at a reverse bias of -800 V. This resulted in the pulse-height spectra generated using a 241Am alpha source (5486 keV) manifesting an energy resolution of less than 0.5% full width at half maximum (FWHM) for all the detectors at -200 V. The charge collection efficiencies (CCEs) were measured to be 98–99% with no discernable correlation to the energy resolution. A drift-diffusion model fit to the variation of CCE as a function of bias voltage, revealed a minority carrier diffusion length of ~10 μm. Deep level transient spectroscopy measurements on the best resolution detector revealed that the excellent performance was the result of having ultralow concentrations of the order of 1011 cm-3 lifetime limiting defects—Z 1/2 and EH 6/7 .
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Electronic structure, magnetic correlations, and superconducting pairing in the reduced Ruddlesden-Popper bilayer La 3 Ni 2 O 6 under pressure: Different role of d 3 z 2 - r 2 orbital compared with La 3 Ni 2 O 7
The recent discovery of superconductivity in bilayer La 3 Ni 2 O 7 (327-LNO) under pressure stimulated much interest in layered nickelates. However, superconductivity was not found in another bilayer nickelate system, La 3 Ni 2 O 6 (326-LNO), even under pressure. To understand the similarities and differences between 326-LNO and 327-LNO, using density functional theory and the random phase approximation (RPA), we systematically investigate 326-LNO under pressure. The large crystal-field splitting between the e g orbitals caused by the missing apical oxygen moves the d 3z 2 -r 2 orbital farther away from the Fermi level, implying that the d 3z 2 -r 2 orbital plays a less important role in 326-LNO than in 327-LNO. This also results in a smaller bandwidth for the d x 2 -y 2 orbital and a reduced energy gap for the bonding-antibonding splitting of the d 3z 2 -r 2 orbital in 326-LNO, as compared to 327-LNO. Moreover, the in-plane hybridization between the d x 2 -y 2 and d 3z 2 -r 2 orbitals is found to be small in 326-LNO, while it is much stronger in 327-LNO. Furthermore, the low-spin ferromagnetic state is found to be the likely ground state in 326-LNO under high pressure. The weak interlayer coupling suggests that s ± -wave pairing is unlikely in 326-LNO. The robust in-plane ferromagnetic coupling also suggests that d-wave superconductivity, which is usually caused by antiferromagnetic fluctuations of the d x 2 -y 2 orbital, is also unlikely in 326-LNO. These conclusions are supported by our many-body RPA calculations of the pairing behavior. Additionally, contrasting with the cuprates, for the bilayer cuprate HgBa 2 CaCu 2 O 6 , we find a strong self-doping effect of the d x 2 -y 2 orbital under pressure, with the charge of Cu being reduced by approximately 0.13 electrons from 0 GPa to 25 GPa. In contrast, we do not observe such a change in the electronic density in 326-LNO under pressure, establishing another important difference between the nickelates and the cuprates.
36 MATERIALS SCIENCE↗
Enhancement of the Curie temperature in single-crystalline ferromagnetic LaCrGe 3 by electron irradiation-induced disorder
LaCrGe 3 has attracted attention as a potential candidate for studies of quantum phase transitions in a ferromagnetic material. The application of pressure avoids a quantum critical point by developing a new magnetic phase. It was suggested that the disorder may provide an alternative route to a quantum critical point. We used low-temperature 2.5 MeV electron irradiation to induce relatively small amounts of pointlike disorder in single crystals of LaCrGe 3 . Irradiation leads to an increase of the resistivity at all temperatures with some deviation from the Matthiessen rule. Hall effect measurements show that electron irradiation does not cause any detectable change in the carrier density. Unexpectedly, the Curie temperature, T FM , increases with the increase of disorder from approximately 90 K in pristine samples up to nearly 100 K in the heavily irradiated sample, with a tendency towards saturation at higher doses. This effect is observed both in resistivity and magnetization measurements. Although the mechanism of this effect is not entirely clear, we conclude that it cannot be caused by effective “doping” or “pressure” due to electron irradiation. Finally, we suggest that disorder-induced broadening of a sharp peak in the density of states, D(E), situated at E p = E F – 0.25 eV below the Fermi energy, E F , causes an increase in D(E F ), leading to an enhancement of T FM in this itinerant ferromagnet.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Unconventional gate-induced superconductivity in transition-metal dichalcogenides
Superconductivity in few-layer semiconducting transition-metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully consistent theoretical picture is still missing. Here we develop a realistic framework that combines the predictive power of first-principles simulations with the versatility and insight of Bardeen-Cooper-Schrieffer gap equations to rationalize such experiments. The multivalley nature of semiconducting TMDs is taken into account, together with the doping- and momentum-dependent electron-phonon and Coulomb interactions. Consistently with experiments, we find that superconductivity occurs when the electron density is large enough that the 𝑄 valleys get occupied, as a result of a large enhancement of electron-phonon interactions. Despite being phonon driven, the superconducting state is predicted to be sensitive to Coulomb interactions, which can lead to the appearance of a relative sign difference between valleys and thus to a 𝑠 +− character. We discuss qualitatively how such scenario may account for many of the observed physical phenomena for which no microscopic explanation has been found so far, including in particular the presence of a large subgap density of states, and the sample-dependent dome-shaped dependence of 𝑇 𝑐 on accumulated electron density. Our results provide a comprehensive analysis of gate-induced superconductivity in semiconducting TMDs, and introduce an approach that will likely be valuable for other multivalley electronic systems, in which superconductivity occurs at relatively low electron density.
2-dimensional systems↗
Tantalum-stabilized ruthenium oxide electrocatalysts for industrial water electrolysis
The iridium oxide (IrO 2 ) catalyst for the oxygen evolution reaction used industrially (in proton exchange membrane water electrolyzers) is scarce and costly. Although ruthenium oxide (RuO 2 ) is a promising alternative, its poor stability has hindered practical application. Here, we used well-defined extended surface models to identify that RuO 2 undergoes structure-dependent corrosion that causes Ru dissolution. Tantalum (Ta) doping effectively stabilized RuO 2 against such corrosion and enhanced the intrinsic activity of RuO 2 . In an industrial demonstration, Ta-RuO 2 electrocatalyst exhibited stability near that of IrO 2 and had a performance decay rate of ~14 microvolts per hour in a 2800-hour test. At current densities of 1 ampere per square centimeter, it had an overpotential 330 millivolts less than that of IrO 2 .
Zhang, Jiahao [Sichuan Univ., Chengdu (China); Uni↗
New High-Entropy Perovskite Oxides with Increased Reducibility and Stability for Thermochemical Hydrogen Generation
This project aims to design, synthesize, and test a transformative class of High-Entropy Perovskite Oxides (HEPOs) as redox oxides to enable thermochemical hydrogen generation with improved stability, kinetics, and efficiency. These developed HEPOs are expected to demonstrate improved kinetics with oxygen surface exchange coefficient ( k > 7.5×10 -4 cm/s) in Budget Period (BP) 1, retain its structural stability in a broad range of oxygen non-stoichiometry (Δδ > 0.15) at a low operating reduction temperature of T red < 1400°C in BP 2, and deliver a H 2 yield of over 400 µmol per gram of oxide and high stability with less than 20% degradation after at least 50 cycles in BP 3. This project is feasible due to the unique thermodynamic properties (simultaneously increased reducibility and phase stability) and kinetic characters (stability against particle coarsening and potentially enhanced oxygen transport and surface reaction kinetics) of such HEPOs, and it is enabled by a unique active learning computational design approach. Computational studies have been conducted to investigate the oxygen vacancy formation in complex perovskite systems. * Accurate prediction of V O .. concentration with disordered A-site cations in Fe-based high-entropy perovskite oxides * Combined MC/DFT computation elucidates the mechanism of Co preference on the redox due to the strain introduced by local distortion. In this project, we explored a large number (~150) of perovskite compositions, which are listed in Tables 2 – 4). * All perovskite specimens have been synthesized through a high-throughput high-energy ball milling process, followed by the conventional sintering process. * XRD, SEM/EDS and TGA were performed to confirm the crystal structure, phase homogeneity and oxygen non-stoichiometry for compositionally complex perovskite oxides (CCPOs). * 110 compositions show single-phase from XRD * Unusual aliovalent doping effects in medium-entropy perovskite compositions. * V-shape relation between Δδ vs. x (La 1-x Sr x )(Mn 1/3 Fe 1/3 Ti 1/3 )O 3 * The highest reported hydrogen production for the CCPOs made in this project ( T re = 1350 ºC 30 min, T Ox = 1100 ºC 30 min) * B-site mixing (La 0.8 Sr 0.2 )(Mn 0.2 Fe 0.2 Co 0.4 Al 0.2 )O 3 : 89.97 ± 2.73 mmol H2 /mol oxide (395 ± 10 μmol/g oxide ) (i) No phase transformation during reactions when Co molar ratio is less than 61% (ii) Balance between intrinsic kinetics (oxygen surface exchange) and thermodynamics (oxygen non-stoichiometry) (iii) Preference of Co identified by in-situ XPS * A-site mixing (La 1/6 Pr 1/6 Nd 1/6 Gd 1/6 Ba 1/6 Sr1/6)MnO 3 : 98.48 mmol H2 /mol oxid e (~415 μmol/g oxide )
08 HYDROGEN↗
Electron paramagnetic resonance and X-ray studies in doped silver carbonate.
Doped silver carbonate defect structure and doping effect on reaction kinetics by X rays and electron paramagnetic resonance, finding new crystal structure
Ashford, N. A.↗
The influence of heavy doping on the emitter efficiency of a bipolar transistor
Bipolar junction transistor doping effects on bandgap decrease and emitter efficiency, explaining current gain temperature dependence
De Man, H. J. J.↗
Efficiency of silicon solar cells as a function of base layer resistivity
This paper reports on a theoretical study of the limitations on silicon solar-cell efficiency for both n(+)-p and n(+)-p-p(+) type cells. Detailed calculations have been made of solar-cell operation using a general computer analysis program for semiconductor devices. The computer program, which simultaneously solves Poisson's equation and the electron and hole quasi-Fermi level equations, provides an accurate numerical solution of solar-cell operation without limiting assumptions or approximations. It is found that minority-carrier lifetime and heavy doping effects in the n(+) surface region present serious limitations to efficiency in low-resistivity silicon solar cells.
Dunbar, P. M.↗
Processing technology for high efficiency silicon solar cells
Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.
Spitzer, M. B.↗