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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Compensation for effects of ambient temperature on rare-earth doped fiber optic thermometer

Variations in ambient temperature have a negative effect on the performance of any fiber optic sensing system. A change in ambient temperature may alter the design parameters of fiber optic cables, connectors, sources, detectors, and other fiber optic components and eventually the performance of the entire system. The thermal stability of components is especially important in a system which employs intensity modulated sensors. Several referencing schemes have been developed to account for the variable losses that occur within the system. However, none of these conventional compensating techniques can be used to stabilize the thermal drift of the light source in a system based on the spectral properties of the sensor material. The compensation for changes in ambient temperature becomes especially important in fiber optic thermometers doped with rare earths. Different approaches to solving this problem are searched and analyzed.

Adamovsky, G.↗
NASA NTRS1990

Compensation for effects of ambient temperature on rare-earth doped fiber optic thermometer

Variations in ambient temperature have a negative effect on the performance of any fiber optic sensing system. A change in ambient temperature may alter the design parameters of fiber optic cables, connectors, sources, detectors, and other fiber optic components and eventually the performance of the entire system. The thermal stability of components is especially important in a system which employs intensity modulated sensors. Several referencing schemes have been developed to account for the variable losses that occur within the system. However, none of these conventional compensating techniques can be used to stabilize the thermal drift of the light source in a system based on the spectral properties of the sensor material. The compensation for changes in ambient temperature becomes especially important in fiber optic thermometers doped with rare earths. Different approaches to solving this problem are searched and analyzed.

Adamovsky, G.↗
NASA NTRS1987

The effect of sulfur and zirconium Co-doping on the oxidation of NiCrAl

The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys, the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S sup 0.2 (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggests that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

Smialek, James L.↗
NASA NTRS1988

The effect of sulfur and zirconium co-doping on the oxidation of NiCrAl

The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys (less than 500 ppma), the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S(0.2) (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggest that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

Smialek, James L.↗
NASA NTRS1980

Computer modeling of high-efficiency solar cells

Transport equations which describe the flow of holes and electrons in the heavily doped regions of a solar cell are presented in a form that is suitable for device modeling. Two experimentally determinable parameters, the effective bandgap shrinkage and the effective asymmetry factor are required to completely model the cell in these regions. Nevertheless, a knowledge of only the effective bandgap shrinkage is sufficient to model the terminal characteristics of the cell. The results of computer simulations of the effects of heavy doping are presented. The insensitivity of the terminal characteristics to the choice of effective asymmetry factor is shown along with the sensitivity of the electric field and quasielectric fields to this parameter. The dependence of the terminal characteristics on the effective bandgap shrinkage is also presented.

Schartz, R. J.↗
NASA NTRS1988

Indentation plasticity and fracture in silicon

Measurements of the ductile-brittle transition temperature of heavily doped silicon were carried out using indentation techniques. Diamond pyramid hardness tests were performed on the (100) face of heavily doped N-type and P-type and intrinsic silicon single crystals. Tests were performed over the range 200 C to 850 C and loads of 100 to 500 g were used. Samples were subsequently etched to reveal dislocation rosettes produced by indentation. Intrinsic silicon underwent a ductile-brittle transition at 660 C, P-type at 645 C and N-type at 625 C. Hardness values varied from 1.1 GPa at 700 C to 11.7 GPa at 200 C. Significant effects of hardness on doping were present only at the highest temperatures. Lower loads generally produced higher hardness but load did not affect the Ductile-Brittle Transition Temperature (DBTT). Fracture toughness values ranged from 0.9 MPa m(1/2) at 200 C to 2.75 MPa m(1/2) near the DBTT. Doping did not affect the fracture toughness of silicon. P-type doping increased the size of dislocation rosettes observed after indentation, but N-type did not, in contradiction of the expected results. Results are discussed in terms of the effect of doping on the dislocation mobility in silicon.

Rybicki, George C.↗
NASA NTRS1987

Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

Radulescu, D. C.↗
NASA NTRS1988

Increased effective barrier heights in Schottky diodes by molecular-beam epitaxy of CoSi2 and Ga-doped Si on Si(111)

Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p(+) layer to 0.89 eV for a sample with a 20-nm-thick p(+) layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.

Fathauer, R. W.↗
NASA NTRS1989

Antiferromagnetism in Co-57-doped La2CuO(4-y) studied by Moessbauer spectroscopy

Moessbauer effect studies of Co-57-doped La2CuO(4-y) were performed at temperatures between 4.2 K and room temperature. These confirm the antiferromagnetic ordering of these compounds below room temperature. Temperature dependence of the quadrupole splitting shows that the hyperfine field is at an angle with the c-axis.

Jha, S.↗
NASA NTRS1992

Quantitative analysis of the effects of vertical magnetic fields on microsegregation in Te-doped LEC GaAs

Using near-IR transmission microscopy with computational absorption analysis, the effects of axial magnetic fields on micro- and macrosegregation during LP-LEC growth of GaAs were quantitatively investigated with a spatial resolution approaching 2 microns. Segregation inhomogeneities exceeding one order of magnitude are found to be related to fluid dynamics of the melt. The applicability of the BPS theory as well as the nonapplicability of the Cochran analysis are established.

Carlson, D. J.↗
NASA NTRS1975

Addition of oxygen to and distribution of oxides in tantalum alloy T-111 at low concentrations

Oxygen was added at 820 and 990 C at an oxygen pressure of about .0003 torr. The technique permitted predetermined and reproducible oxygen doping of the tantalum alloy (T-111). Based on the temperature dependency of the doping reaction, it was concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the tantalum and tungsten oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and oxygen from other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C but not at 820 C. The vaporization of WO3 has no apparent effect on the doping reaction.

Stecura, S.↗