Methane steam reforming at low steam-to-carbon ratio: The effect of Y doping in Rh substituted lanthanum zirconates
Not Available
Zhou, Yan (ORCID:0000000319005277)↗
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Effects of Co doping on the structure and physicochemical properties of hausmannite (Mn 3 O 4 ) and its transformation during aging
Hausmannite is a common low-valence manganese oxide mineral with a distorted spinel structure in surficial sediments. Although natural Mn oxides often contain various transition metal (TM) impurities, few studies have addressed the substitution mechanisms of TMs, such as cobalt (Co), with hausmannite and induced changes in the mineral physicochemical properties. In this study, Co-doped hausmannites with final Co/Mn molar ratios of 0.05 and 0.11 were synthesized and characterized by wet chemical analysis, powder X-ray diffraction (XRD), Fourier transformed infrared spectra (FTIR), high resolution transmission electron microscope (HRTEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure spectroscopy (XAFS). Co-doped samples have larger crystallite sizes and smaller specific surface areas than those of the hausmannite without Co. The Co cations exist in a mixed-valence of +3 and + 2. Powder XRD and acid dissolution experiments indicate that Co incorporates into the mineral structures, and increases the mineral structural stability. Co K-edge extended X-ray adsorption fine structure (EXAFS) analysis demonstrates that Co likely substitutes for lattice Mn(III). After aging at room temperature for three years, 14.1 ± 1.9% of pure hausmannite is transformed to manganite while only 2.6 ± 0.7% of manganite appears in the aged Co-doped sample with an initial Co/Mn molar ratio of 0.10. Finally, these results provide new insights into the incorporation mechanisms of TMs into low valence Mn oxides, and the stability of these minerals in natural environments.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Theoretical and Experimental Insights into the Effects of Zn Doping on the Magnetic and Magnetocaloric Properties of MnCoGe
Abstract not provided
Wang, YiXu↗
Effects of Selenium Doping in Zinc Telluride from First Principles
We report point defects and compensation in zinc telluride have been subjects of study for several decades due to the compound’s scientific/technological applications. Despite this, there remains some disagreement in the literature as to the fine details of its defect chemistry. Recently, it has also come under renewed interest due to the emerging Cd( 1–x )Zn x Te( 1–y )Se y material family, used in nuclear radiation detector applications. In this article, we use state-of-the-art computational tools to re-examine the native defect chemistry of ZnTe and explore how it changes upon addition of selenium using density functional theory with screened hybrid exchange–correlation functionals, thermochemical models of the equilibration environment, and statistical mechanics models of the point defect ensemble.
II-VI semiconductors↗
Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond
Not provided.
Materials Science↗
Effect of Mg doping on carrier recombination in GaN
Time-resolved photoluminescence measurements have been performed on Mg-doped GaN for Mg concentrations in the low- to mid-10 19 cm -3 . As-grown and annealed (600–675 °C) samples were studied. In the as-grown samples, the nonradiative carrier lifetime was found to be about 200 ps and nearly independent of the Mg concentration. Upon annealing, the carrier lifetimes shorten to ~150 ps but, again, show little dependence on the annealing temperature. The analysis of possible Shockley–Read–Hall recombination centers and their behavior during doping and annealing suggests that the main nonradiative recombination center is the Mg–nitrogen vacancy complex. The weak dependence of the PL decay times on temperature indicates that carrier capture into this center has a very low potential barrier, and the nonradiative recombination dominates even at low temperatures.
36 MATERIALS SCIENCE↗
Effect of Mn doping and charge transfer on LaTi 1- x Mn x O 3
Here, we report the magnetic and electronic transport properties of Mn-doped LaTi 1-x Mn x O 3 (x= 0, 0.1, 0.3, 0.5) as a function of temperature and an applied magnetic field. It was found that the Mn-doped samples show a magnetic transition which is not present in the parent LaTiO 3 . The Mn-doped samples showed fluctuations in magnetization at low fields below their Néel transition temperature indicating electronic phase separation in the material. Increased Mn content in the sample strengthens the ferromagnetic-like moment while maintaining G-type antiferromagnetic phase by charge transfer from Mn to Ti and influencing orbital ordering of the Ti 3+ t 2g orbitals. The results are discussed in parallel with transport and bulk magnetization measurements detailing the electronic behavior. An additional context for the mechanism is supported by first-principles density-function theory calculations.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Evaluating the Effects of Nitrogen Doping and Oxygen Doping on SRF Cavity Performance
Superconducting radiofrequency (SRF) cavities are resonators with extremely low surface resistance that enable accelerating cavities to have extremely high quality factors (Q₀). High Q₀ decreases the capital required to keep the accelerators cold by reducing power loss. The performance of SRF cavities is largely governed by the surface composition of the first §I{100}{nm} of the cavity surface. Impurities such as oxygen and nitrogen have been observed to yield high Q₀, but their precise roles are still being studied. Here, we compare the performance of cavities doped with nitrogen and oxygen in terms of surface composition and heating behavior with field. A simulation of the diffusion of oxygen into the bulk of the cavity was built using COMSOL Multiphysics software. Simulated results were compared to the actual surface composition of the cavities as determined from secondary ion mass spectrometry analysis. Understanding how these impurities affects performance allows us to have further insight into the underlying mechanisms that enable these surface treatments to yield high Q₀.
43 PARTICLE ACCELERATORS↗
Examining the Effects of Oxygen Doping on SRF Cavity Performance
Superconducting radiofrequency (SRF) cavities are resonators with extremely low surface resistance that enable accelerating cavities to have extremely high quality factors (Q₀). High (Q₀) decreases the capital required to keep accelerators cold by reducing power loss. The performance of SRF cavities is largely governed by the surface composition of the first 100 nm of the cavity surface. Impurities such as oxygen and nitrogen have been observed to yield high Q₀, but their precise roles are still being studied. Here, we compare the performance of cavities doped with nitrogen and oxygen in terms of fundamental material properties to understand how these impurities affect performance. This enables us to have further insight into the underlying mechanisms that enable these surface treatments to yield high Q₀ performance.
43 PARTICLE ACCELERATORS↗
Defect Study of Group V Doped CdTe By Thermoelectric Effect Spectroscopy
Shallow acceptors in single crystal CdTe induced by Group V (P, As, and Sb) doping are identified by thermoelectric effect spectroscopy (TEES). Understanding defects in Group V doped CdTe is critical to improving and controlling the acceptor density and lifetime in the absorber material which is an important factor determining the open circuit voltage and efficiency in CdTe solar cells.
14 SOLAR ENERGY↗
Coexistence of positive and negative exchange bias effect in Pr-doped NdCrO 3 samples
Positive and negative exchange bias effects are observed in Nd 1-x Pr x CrO 3 (0.00 ≤ x ≤ 1.00) polycrystalline samples. The shift of hysteresis loops, either opposing or following the direction of the field cooling, depends on the concentration of praseodymium. The temperature dependence of magnetization reveals a magnetic transition at T ≈ 220 K likely ascribed to the N é el temperature of Cr 3+ magnetic moments. The non-Kramer Pr 3+ ion seems to play an important role in the magnetic properties of this compound. In the range 0.00 ≤ x ≤ 0.60, all samples presented a decrease in the magnetization below TN and a clear compensation point. Pr-rich samples (x ≥ 0.70) show a paramagnetic-like behavior down to low temperatures. We report the most impressive result is the relation between reversal magnetization and the signal of exchange bias effect which seems be tuned by the Pr-doping.
36 MATERIALS SCIENCE↗
Local structure effects of carbon-doping on the phase change material Ge 2 Sb 2 Te 5
Ge 2 Sb 2 Te 5 is used in phase change memory, a nonvolatile memory technology, due to its phase change properties. The primary advantage of phase change memory over the state-of-the-art (flash memory) is its simple and small device geometry, which allows for denser nodes and lower power consumption. In phase change memory, resistive heating induces fast switching between the high resistance amorphous and low resistance crystalline phases, corresponding to storage of low and high digital states, respectively. However, the instability of the amorphous phase of Ge 2 Sb 2 Te 5 presents issues with processing and long-term data storage; such issues can be resolved by C doping, which stabilizes the amorphous phase and raises the crystallization temperature. To better understand the local structural effects of C doping on Ge 2 Sb 2 Te 5 , in situ Ge K-edge X-ray absorption spectroscopy measurements were taken during heating of films with various C doping concentrations. Here, the range of structural transformation temperatures derived from X-ray absorption near-edge structure analysis across the C doping series proved narrower than crystallization temperatures reported in similar in situ X-ray diffraction experiments, which may reflect changes in local structure that precede long-range ordering during crystallization. In addition, rigorous extended X-ray absorption fine structure fitting across and between temperature series revealed effects of C doping on the rigidity of Ge–Te bonds at low (2 at% and 4 at%) C concentrations.
Langhout, John D.↗