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At least 109 records · Page 6

The automated array assembly task of the low-cost silicon solar array project, phase 2

Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.

Coleman, M. G.↗

NASA Tech Briefs, June 2011

Topics covered include: Wind and Temperature Spectrometry of the Upper Atmosphere in Low-Earth Orbit; Health Monitor for Multitasking, Safety-Critical, Real-Time Software; Stereo Imaging Miniature Endoscope; Early Oscillation Detection Technique for Hybrid DC/DC Converters; Parallel Wavefront Analysis for a 4D Interferometer; Schottky Heterodyne Receivers With Full Waveguide Bandwidth; Carbon Nanofiber-Based, High-Frequency, High-Q, Miniaturized Mechanical Resonators; Ultracapacitor-Based Uninterrupted Power Supply System; Coaxial Cables for Martian Extreme Temperature Environments; Using Spare Logic Resources To Create Dynamic Test Points; Autonomous Coordination of Science Observations Using Multiple Spacecraft; Autonomous Phase Retrieval Calibration; EOS MLS Level 1B Data Processing Software, Version 3; Cassini Tour Atlas Automated Generation; Software Development Standard Processes (SDSP); Graphite Composite Panel Polishing Fixture; Material Gradients in Oxygen System Components Improve Safety; Ridge Waveguide Structures in Magnesium-Doped Lithium Niobate; Modifying Matrix Materials to Increase Wetting and Adhesion; Lightweight Magnetic Cooler With a Reversible Circulator; The Invasive Species Forecasting System; Method for Cleanly and Precisely Breaking Off a Rock Core Using a Radial Compressive Force; Praying Mantis Bending Core Breakoff and Retention Mechanism; Scoring Dawg Core Breakoff and Retention Mechanism; Rolling-Tooth Core Breakoff and Retention Mechanism; Vibration Isolation and Stabilization System for Spacecraft Exercise Treadmill Devices; Microgravity-Enhanced Stem Cell Selection; Diagnosis and Treatment of Neurological Disorders by Millimeter-Wave Stimulation; Passive Vaporizing Heat Sink; Remote Sensing and Quantization of Analog Sensors; Phase Retrieval for Radio Telescope and Antenna Control; Helium-Cooled Black Shroud for Subscale Cryogenic Testing; Receive Mode Analysis and Design of Microstrip Reflectarrays; and Chance-Constrained Guidance With Non-Convex Constraints.

Source record↗

Current conduction in junction gate field effect transistors

The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.

Kim, C.↗

Self-mode-locked chromium-doped forsterite laser generates 50-fs pulses

Stable transform-limited (delta nu-delta tau = 0.32) femtosecond pulses with a FWHM of 50 fs were generated from a self-mode-locked chromium-doped forsterite laser. The forsterite laser was synchronously pumped by a CW mode-locked Nd:YAG (82 MHz) laser that generated picosecond pulses (200-300 ps) and provided the starting mechanism for self-mode-locked operation. Maximum output power was 45 mW for 3.9 W of absorbed pumped power with the use of an output coupler with 1 percent transmission. The self-mode-locked forsterite laser was tuned from 1240 to 1270 nm.

Seas, A.↗

The Fabrication of an Evanescent Field Sensor

We present current results concerning novel sensor-based applications for tilted angle fiber Bragg gratings summarized in a recently filed patent. In addition, concepts involving the coupling of light out of the core region of an optical fiber using ablated corrugations to induce interactions with the surrounding media will also be discussed. The interactions between the media and the coupled light formulate the sensing mechanism for both of these devices. The research illustrated here is an extension of previous work that investigated the affects of intense UV radiation fields on both SiO2 and Ge-doped SiO2-based structures (specifically optical fibers and preforms). Finally, these sensors were devised in order to satisfy an experimental task set forth by NASA Glenn involving the production of a prototype evanescent field sensor capable of real-time, dynamic index of refraction measurements as well as early (ultra-high sensitivity) detection of icing on airplane wings.

Lyons, Donald R.↗

A Thermal and Electrical Analysis of Power Semiconductor Devices

The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

Vafai, Kambiz↗

An Ultra-long Life, High-performance, Flexible Li-CO2Battery Based on Multifunctional Carbon Electrocatalysts

Integrating CO2 utilization and renewable energy delivery/storage, the rechargeable Li–CO2 battery has been considered as a promising candidate for next-generation secondary batteries. However, high-performance catalyst(s) for efficient formation and decomposition of the discharge product, Li2CO3, are an imperative part of a Li–CO2 battery. The development of flexible Li–CO2 batteries extends their applications into compliant and wearable devices/systems, but at the same time imposes a big challenge for battery fabrication and lifetime enhancement. In this study, a rechargeable quasi-solidus flexible Li–CO2 battery was designed and fabricated using highly active N,S-doped carbon nanotubes (N,S-doped CNTs) as the cathode catalyst, and a smart polymer gel as the flexible electrolyte. This newly-developed flexible Li–CO2 battery exhibited a capacity as high as 23560 mAh g−1 based on the catalyst mass and an ultra-long lifetime of up to 538 cycles with excellent mechanical flexibility. This work provides a platform for the design and development of high-performance flexible Li–CO2 batteries from low-cost, earth-abundant, carbon-based multifunctional cathode catalysts.

Superior stability↗

Integrated optical components in thin films of polymers

The results will be reported on the study of integrated optical components based on nonlinear optical polymeric films. Polymers poly(methyl methacrylate) (PMMA) and polyimide (PI) doped with organic laser dyes 4-dicyanomethylene-2-methyl-6-p dimethylaminostyryl-4H pyran (DCM) and 1, 3, 5, 7, 8 - pentamethyl-2,6 -diethyl-pyrromethene -BF2-complex (Pyrommethene 567, PM-567) were selected as materials for light guiding films. Additionally, UV polymerized polydiacetylene (PDA) on glass substrate was used as a waveguide material. Optical waveguides were fabricated using spin coating of preoxidized silicon wafers (1.5 micrometer silicon oxide layer) with organic dye/polymer solution followed by soft baking. the modes in slab waveguides were studied using prism coupling techniques. Measured values of mode coupling angles in multimode waveguides were used to calculate film thickness and refractive index for different polarizations. Refractive index anisotropy was found in PDA waveguide. The optimal conditions of spin coating for single mode waveguide fabrication were estimated. Propagation losses were measured by collecting the light scattered from the trace of a propagating mode either by scanning photo detector or by CCD camera. Different types of light coupling techniques were used including end-dire coupling, prism and grating coupling. Mechanical printing technique was developed for coupling grating fabrication resulting in gratings with 4% diffraction efficiency. The gratings demonstrated good stability with diffraction efficiency relaxation rate 2.4 dB/hour at a temperature approximately 15-20 C below glass transition point. Dye doped waveguides were transversally pumped with frequency doubled Nd:YAG Q-switched laser producing intensive light emission with apparent 6 kW/sq cm pump threshold and spectrum narrowing near 617 nm peak in the case of DCM doped waveguide. PM-567 doped waveguide pumped with CW Ar(+) laser (514 nm wavelength) far below threshold (0.1 W/sq.cm pump power) demonstrated emission spectrum narrowing near 616 nm peak with 18% power conversion slope efficiency. In this case emission spectrum modification was caused by the enhanced light absorption along the direction of propagating waveguide modes. Changing length, thickness, and other morphlogical waveguide parameters one can modify emission spectrum in predictable direction. The results show that polymeric waveguides, especially based on high temperature polymers such as Pl, can be used to produce a varietiy of active and passive silicon compatible integrated optical components for aerospace applications.

Sarkisov, Sergey↗

Sub-Optical Lithography With Nanometer Definition Masks

Nanometer feature size lithography represents a major paradigm shift for the electronics and micro-electro-mechanical industries. In this paper, we discuss the capacity of dynamic focused reactive ion beam (FIB) etching systems to undertake direct and highly anisotropic erosion of thick evaporated gold coatings on boron-doped silicon X-ray mask membranes. FIB offers a new level of flexibility in micro fabrication, allowing for fast fabrication of X-ray masks, where pattern definition and surface alteration are combined in the same step which eliminates the whole lithographic process, in particular resist, resist development, electro-deposition and resist removal. Focused ion beam diameters as small as 7 nm can be obtained enabling fabrication well into the sub-20 nm regime. In preliminary demonstrations of this X-ray mask fabrication technique 22 nm width lines were milled directly through 0.9 microns of gold and a miniature mass spectrometer pattern was milled through over 0.5 microns of gold. Also presented are the results of the shadow printing, using the large depth of field of synchrotron high energy parallel X-ray beam, of these and other sub-optical defined patterns in photoresist conformally coated over surfaces of extreme topographical variation. Assuming that electronic circuits and/or micro devices scale proportionally, the surface area of devices processed with X-ray lithography and 20 nm critical dimension X-ray masks would be 0.5% that of contemporary devices (350 nm CD). The 20 CD mask fabrication represents an initial effort - a further factor of three reduction is anticipated which represents a further order-of-magnitude reduction in die area.

Hartley, Frank T.↗

Evaluation of the Improvement in the Figure of Merit of Bi_2Te_3-Based Alloys with Addition of Ultrafine Scattering Centers

The addition of ultrafine scattering centers into Bi_2Te_3-based materials and their impact on the thermal and electrical transport properties in a 200-500 K temperature range are discussed. Based on previous theoretical efforts, the resulting improvements in the figure of merit of these heavily doped thermoelectric semiconductors were calculated as a function of composition, temperature, doping level, particulate size and concentration. Determination of the lattice thermal conductivity of the various alloys was conducted by considering phonon-phonon, carrier-phonon, point defect and inert scattering center scattering mechanisms. Degradation of the electrical properties due to the increase scattering rate was also taken into account. Practical application of these results is considered.

Fleurial, Jean-Pierre↗

Effect of oxygen stoichiometry on T(sub c) of Bi-based superconductors

The role of oxygen stoichiometry on T(sub c) is relatively well established on La2CuO(4+x) and the YBa2Cu3O(7-x) (123) superconductors, as compared to the Bi-based superconductors. Results are presented of investigations on the effects of oxygen stoichiometry on the transition temperature T(sub c) of Bi2Sr2CaCu2O(8+x) (2212 phase), and Pb-doped Bi2Sr2Ca2Cu3O(10+X) (2223 phase). It is shown that the effects of oxygen stoichiometry on T(sub c) of these two phases are very different. These results may be helpful in understanding the mechanism of superconductivity in the Bi-based superconductors.

Zhao, J.↗

Spectrally Tailored Pulsed Thulium Fiber Laser System for Broadband Lidar CO2 Sensing

Thulium doped pulsed fiber lasers are capable of meeting the spectral, temporal, efficiency, size and weight demands of defense and civil applications for pulsed lasers in the eye-safe spectral regime due to inherent mechanical stability, compact "all-fiber" master oscillator power amplifier (MOPA) architectures, high beam quality and efficiency. Thulium fiber's longer operating wavelength allows use of larger fiber cores without compromising beam quality, increasing potential single aperture pulse energies. Applications of these lasers include eye-safe laser ranging, frequency conversion to longer or shorter wavelengths for IR countermeasures and sensing applications with otherwise tough to achieve wavelengths and detection of atmospheric species including CO2 and water vapor. Performance of a portable thulium fiber laser system developed for CO2 sensing via a broadband lidar technique with an etalon based sensor will be discussed. The fielded laser operates with approximately 280 J pulse energy in 90-150ns pulses over a tunable 110nm spectral range and has a uniquely tailored broadband spectral output allowing the sensing of multiple CO2 lines simultaneously, simplifying future potentially space based CO2 sensing instruments by reducing the number and complexity of lasers required to carry out high precision sensing missions. Power scaling and future "all fiber" system configurations for a number of ranging, sensing, countermeasures and other yet to be defined applications by use of flexible spectral and temporal performance master oscillators will be discussed. The compact, low mass, robust, efficient and readily power scalable nature of "all-fiber" thulium lasers makes them ideal candidates for use in future space based sensing applications.

Heaps, William S.↗

Temperature Dependent E2 Raman Modes in the ZnCoO Ternary Alloy

The anharmonic properties of low and high frequency E2 modes of ZnO and Co doped ZnO were investigated using Raman scattering spectroscopy. We have determined the behavior of frequency, linewidths, and lifetime of E2 modes in the temperature range from 80 to 800 K. In the case of E2(high) mode the frequency shift towards the lower energy side was analyzed in light of the theory of anharmonic phonon-phonon interaction and thermal expansion of the lattice, and the linewidth behavior was analyzed in terms of anharmonic effect of three-phonon decay mechanism. But in the case of E2(low), the linewidth and frequency behaved practically harmonic with respect to temperature and independent of Co substitutions. It is found that the E2(high) phonon anharmonicity is higher for ZnCoO alloys than in pure ZnO and it increases with the compositional disorder. The low temperature lifetime of E2 phonon in ZnO, 1 % and 3% Co doped ZnO were found to be 1.S2, 1.74, and 1.54 ps, respectively.

Samanta, K.↗

Modelling directional solidification

An improved understanding of the phenomena of importance to directional solidification is attempted to enable explanation and prediction of differences in behavior between solidification on Earth and in space. Emphasis is now on experimentally determining the influence of convection and freezing rate fluctuations on compositional homogeneity and crystalline perfection. A correlation is sought between heater temperature profiles, buoyancy-driven convection, and doping inhomogeneities using naphthalene doped with anthracene. The influence of spin-up/spin-down is determined on compositional homogeneity and microstructure of indium gallium antimonide. The effect is determined of imposed melting - freezing cycles on indium gallium antimonide. The mechanism behind the increase of grain size caused by using spin-up/spin-down in directional solidification of mercury cadimum telluride is sought.

Wilcox, William R.↗

Reliability assessment of multiple quantum well avalanche photodiodes

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

Yun, Ilgu↗

Mechanical behavior of polycrystalline ceramics: Brittle fracture of SiC-Si3N4 materials

Various properties of ceramic materials were investigated. Magnesium oxide and the role of anion impurities were investigated together with the slow crack growth in silicon nitride-silicon carbide ceramics. The oxide program involved development of fabrication techniques for anion doped materials and evaluation of the role of these anions in the hot pressing response, grain boundary diffusion of nickel doped material, grain boundary microhardness, and grain growth. The carbide-nitride work employed commercial materials and the research involved evaluation of a recently reported technique for study of slow crack growth and the development of data for these commercial materials.

Leipold, M. H.↗

Mechanical behavior of polycrystalline ceramics: Brittle fracture of SiC-Si3N4 materials

The first study area involved magnesium oxide and the role of anion impurities, while the second area was directed toward slow crack growth in silicon nitride-silicon carbide ceramics. The oxide program involved development of fabrication techniques for anion doped materials and evaluation of the role of these anions in the hot pressing response, grain boundary diffusion of nickel doped material, grain boundary microhardness, and grain growth.

Leipold, M. H.↗

Analyses of Transistor Punchthrough Failures

The failure of two transistors in the Altitude Switch Assembly for the Solid Rocket Booster followed by two additional failures a year later presented a challenge to failure analysts. These devices had successfully worked for many years on numerous missions. There was no history of failures with this type of device. Extensive checks of the test procedures gave no indication for a source of the cause. The devices were manufactured more than twenty years ago and failure information on this lot date code was not readily available. External visual exam, radiography, PEID, and leak testing were performed with nominal results Electrical testing indicated nearly identical base-emitter and base-collector characteristics (both forward and reverse) with a low resistance short emitter to collector. These characteristics are indicative of a classic failure mechanism called punchthrough. In failure analysis punchthrough refers to an condition where a relatively low voltage pulse causes the device to conduct very hard producing localized areas of thermal runaway or "hot spots". At one or more of these hot spots, the excessive currents melt the silicon. Heavily doped emitter material diffuses through the base region to the collector forming a diffusion pipe shorting the emitter to base to collector. Upon cooling, an alloy junction forms between the pipe and the base region. Generally, the hot spot (punch-through site) is under the bond and no surface artifact is visible. The devices were delidded and the internal structures were examined microscopically. The gold emitter lead was melted on one device, but others had anomalies in the metallization around the in-tact emitter bonds. The SEM examination confirmed some anomalies to be cosmetic defects while other anomalies were artifacts of the punchthrough site. Subsequent to these analyses, the contractor determined that some irregular testing procedures occurred at the time of the failures heretofore unreported. These testing irregularities involved the use of a breakout box and were the likely cause of the failures. There was no evidence to suggest a generic failure mechanism was responsible for the failure of these transistors.

Nicolas, David P.↗