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At least 109 records · Page 6

Modes of Disorder in Poly(carbon monofluoride)

Poly(carbon monofluoride), or (CF) n , is a layered fluorinated graphite material consisting of nanosized platelets. In this work, we present experimental multidimensional solid-state NMR spectra of (CF)n, supported by density functional theory (DFT) calculations of NMR parameters, which overhauls our understanding of structure and bonding in the material by elucidating many ways in which disorder manifests. We observe strong 19 F NMR signals conventionally assigned to elongated or “semi-ionic” C–F bonds and find that these signals are in fact due to domains where the framework locally adopts boat-like cyclohexane conformations. We calculate that C–F bonds are weakened but are not elongated by this conformational disorder. Exchange NMR suggests that conformational disorder avoids platelet edges. We also use a new J-resolved NMR method for disordered solids which provides molecular-level resolution of highly fluorinated edge states. Strings of consecutive difluoromethylene groups at edges are relatively mobile. Topologically distinct edge features, including zigzag edges, crenellated edges, and coves are resolved in our samples by solid-state NMR. Disorder should be controllable in a manner dependent on synthesis, affording new opportunities for tuning the properties of graphite fluorides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Bottom-up Assembly of Nanoporous Graphene with Emergent Electronic States

The incorporation of nanoscale pores into a sheet of graphene allows it to switch from an impermeable semimetal to a semiconducting nanosieve. Nanoporous graphenes are desirable for applications ranging from high-performance semiconductor device channels to atomically thin molecular sieve membranes, and their performance is highly dependent on the periodicity and reproducibility of pores at the atomic level. Achieving precise nanopore topologies in graphene using top-down lithographic approaches has proven to be challenging due to poor structural control at the atomic level. Alternatively, atomically precise nanometer-sized pores can be fabricated via lateral fusion of bottom-up synthesized graphene nanoribbons. This technique, however, typically requires an additional high temperature cross-coupling step following the nanoribbon formation that inherently yields poor lateral conjugation, resulting in 2D materials that are weakly connected both mechanically and electronically. Here, we demonstrate a novel bottom-up approach for forming fully conjugated nanoporous graphene through a single, mild annealing step following the initial polymer formation. We find emergent interface-localized electronic states within the bulk band gap of the graphene nanoribbon that hybridize to yield a dispersive two-dimensional low-energy band of states. We show that this low-energy band can be rationalized in terms of edge states of the constituent single-strand nanoribbons. The localization of these 2D states around pores makes this material particularly attractive for applications requiring electronically sensitive molecular sieves.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Engineering Corner States from Two-Dimensional Topological Insulators

We theoretically demonstrate that the second-order topological insulator with robust corner states can be realized in two-dimensional $\mathbb{Z}_2$ topological insulators by applying an in-plane Zeeman field. The Zeeman field breaks the time-reversal symmetry and thus destroys the $\mathbb{Z}_2$ topological phase. Nevertheless, it respects some crystalline symmetries and thus can protect the higher-order topological phase. By taking the Kane-Mele model as a concrete example, we find that spin-helical edge states along zigzag boundaries are gapped out by the Zeeman field whereas the in-gap corner state at the intersection between two zigzag edges arises, which is independent of the field orientation. In this work, we further show that the corner states are robust against the out-of-plane Zeeman field, staggered sublattice potentials, Rashba spin-orbit coupling, and the buckling of honeycomb lattices, making them experimentally feasible. Similar behaviors can also be found in the well-known Bernevig-Hughes-Zhang model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic brightening and nanoscale imaging of spin-polarized helical edge modes in ZrTe 5

Efficient charge transport remains a fundamental challenge for nanoelectronic devices, as their performance is constrained by high dissipation and the impedance mismatch between high-frequency signal sources and nanoscale circuit interfaces. Although topologically protected helical edge modes offer a dissipationless and backscattering-resilient alternative, achieving nanoscale control over these modes requires direct visualization of their spatial electrodynamics, especially under high-frequency operation. Here, by utilizing cryogenic magneto-infrared scattering-type scanning near-field optical microscopy (cm-IR-sSNOM), we image spin-polarized helical edge channels in ZrTe 5 at the nanoscale, revealing magnetic-field-induced brightening as a high-frequency electrodynamic signature of robust topological edge modes. Operating at 1.8 K and under a magnetic field of up to 5 T, we observe the emergence of edge-state polarizability at infrared frequencies that is notably resilient to the magnetic gaps that typically quench d.c. and microwave edge transport. Our results reveal a topological ‘two-lane’ spatial reorganization in which an external magnetic field induces a spin-population imbalance between counterpropagating edge modes. Favoured helical branches are confined against physical boundaries to activate a net infrared near-field contrast. This electrodynamic response scales linearly with the number of atomic layers, which confirms that individual layers in ZrTe 5 preserve their discrete quantum spin Hall identities. These findings may be useful for developing topological spintronic devices, as the magnetic infrared tunability of helical edge channels provides a pathway for low-loss nanoscale interconnects and high-speed information processing.

36 MATERIALS SCIENCE↗

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

Kim, Hyun-Jung↗

Topological band gap in intercalated epitaxial graphene

The study of functional manipulation of graphene is a critical subject, both for fundamental research and practical applications. In this study, we present that the intercalation of 5d transition metals into epitaxial graphene on SiC is a promising strategy for the realization of topologically nontrivial phases with a finite band gap in graphene. Employing first-principles calculations, grounded in density functional theory, we demonstrate that Re- and Ta-intercalated graphene evolve into two-dimensional topological insulators. These exhibit linear Dirac cones and quadratic bands with topological band gaps, respectively. The emergence of these topological states is attributed to the strong spin–orbit coupling strength of the intercalants. We show that the corresponding topological edge states persist within the finite bulk band gap, aligning with the bulk-boundary correspondence. Furthermore, we explore the spin splitting of the band structure, brought about by the inversion symmetry breaking and the spin–orbit coupling. Finally, our study underscores that the intercalation of graphene is an effective and a feasible approach for manipulating the band gap and the topological nature of graphene. Such intercalated graphene systems hold potential utility for spintronics and low-dimensional quantum device applications.

36 MATERIALS SCIENCE↗

Entropy and Seebeck signals meet on the edges

Here, we explore the electronic entropy per particle s and Seebeck coefficient S in zigzag graphene ribbons. Pristine and edge-doped ribbons are considered using tight-binding models to inspect the role of edge states in the observed thermal transport properties. As a band gap opens when the ribbons are doped at one or both edges, due to asymmetric edge potentials, we find that s and S signals are closely related to each other: both develop sharp dip-peak line shapes as the chemical potential lies in the gap, while the ratio s/S exhibits a near-constant value equal to the elementary charge e at low temperatures. This constant ratio suggests that S can be seen as the transport differential entropy per charge, as suggested by some authors. Our calculations also indicate that measurement of s and S may be useful as a spectroscopic probe of different electronic energy scales involved in such quantities in gapped materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Superconductivity and topological aspects of two-dimensional transition-metal monohalides

Two-dimensional (2D) superconducting states have attracted much recent interest, especially when they coexist with nontrivial band topology which affords a promising approach towards Majorana fermions. Using first-principles calculations, we predict van der Waals monolayered transition-metal monohalides MX (M = Zr, Mo; X = F, Cl) as a class of 2D superconductors with remarkable transition temperature (5.9–12.4 K). Anisotropic Migdal-Eliashberg theory reveals that ZrCl have a single superconducting gap Δ ~ 2.14 meV, while MoCl is a two-gap superconductor with Δ ~ 1.96 and 1.37 meV. The Z 2 band topology of 2D MX is further demonstrated that MoF and MoCl are candidates for realizing topological superconductivity. Moreover, the Dirac phonons of ZrCl and MoCl contribute w-shape phononic edge states, which are potential for an edge-enhanced electron-phonon coupling. These findings demonstrate that 2D MX offers an attractive platform for exploring the interplay between superconductivity, nontrivial electronic and phononic topology.

36 MATERIALS SCIENCE↗

Axion optical induction of antiferromagnetic order

Using circularly polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of chirality and magnetization, with important implications in asymmetric synthesis in chemistry; homochirality in biomolecules; and ferromagnetic spintronics. We report the surprising observation of helicity-dependent optical control of fully compensated antiferromagnetic order in two-dimensional even-layered MnBi 2 Te 4 , a topological axion insulator with neither chirality nor magnetization. Furthermore, to understand this control, we study an antiferromagnetic circular dichroism, which appears only in reflection but is absent in transmission. We show that the optical control and circular dichroism both arise from the optical axion electrodynamics. Our axion induction provides the possibility to optically control a family of PT-symmetric antiferromagnets (P, inversion; T, time-reversal) such as Cr 2 O 3 , even-layered CrI3 and possibly the pseudo-gap state in cuprates. In MnBi 2 Te 4 , this further opens the door for optical writing of a dissipationless circuit formed by topological edge states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Gapless Floquet topology

Symmetry-protected topological (SPT) phases in insulators and superconductors are known for their robust edge modes, linked to bulk invariants through the bulk-boundary correspondence. While this principle traditionally applies to gapped phases, recent advances have extended it to gapless systems, where topological edge-states persist even in the absence of a bulk gap. We extend this framework to periodically driven chains with chiral symmetry, revealing the existence of topological edge zero and π modes despite the lack of bulk gaps in the quasienergy spectrum. By examining the half-period decomposition of chiral evolutions, we construct topological invariants that circumvent the need to define the Floquet Hamiltonian, making them more suitable for generalization to the gapless regime. We provide explicit examples, including generalizations of the Kitaev chain and related spin models, where localized π modes emerge even when the bulk is gapless at the same quasienergy as the edge modes. Here, we numerically study the effect of interactions, which give a finite lifetime to the edge modes in the thermodynamic limit with the decay rate consistent with Fermi's golden rule.

1-dimensional systems↗

Edge Channel Transmission through a Quantum Point Contact in the Two-Dimensional Topological Insulator Cadmium Arsenide

Cadmium arsenide (Cd 3 As 2 ) thin films feature a two-dimensional topological insulator (2D TI) phase for certain thicknesses, which theoretically hosts a set of counterpropagating helical edge states that are characteristic of a quantum spin Hall (QSH) insulator. In devices containing electrostatically defined junctions and for magnetic fields below a critical value, chiral edge modes of the quantum Hall effect can coexist with QSH-like edge modes. In this work, we use a quantum point contact (QPC) device to characterize edge modes in the 2D TI phase of Cd 3 As 2 and to understand how they can be controllably transmitted, which is important for use in future quantum interference devices. We investigate equilibration among both types of modes and find non-spin-selective equilibration. We also demonstrate the effect of the magnetic field on suppressing equilibration. We discuss the potential role of QSH-like modes in a transmission pathway that precludes full pinch-off.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evidence for a higher-order topological insulator in a three-dimensional material built from van der Waals stacking of bismuth-halide chains

Low-dimensional van der Waals materials have been extensively studied as a platform with which to generate quantum effects. Advancing this research, topological quantum materials with van der Waals structures are currently receiving a great deal of attention. Here, we use the concept of designing topological materials by the van der Waals stacking of quantum spin Hall insulators. Most interestingly, we find that a slight shift of inversion centre in the unit cell caused by a modification of stacking induces a transition from a trivial insulator to a higher-order topological insulator. Based on this, we present angle-resolved photoemission spectroscopy results showing that the real three-dimensional material Bi4Br4 is a higher-order topological insulator. Our demonstration that various topological states can be selected by stacking chains differently, combined with the advantages of van der Waals materials, offers a playground for engineering topologically non-trivial edge states towards future spintronics applications.

36 MATERIALS SCIENCE↗

Monolayer 1T-LaN 2 : Dirac spin-gapless semiconductor of p -state and Chern insulator with a high Chern number

Two-dimensional transition-metal dinitrides have attracted considerable attention in recent years due to their rich magnetic properties. Here, we focus on rare-earth-metal elements and propose a monolayer of lanthanum dinitride with a 1T structural phase, 1T-LaN 2 . Using first-principles calculations, we systematically investigated the structure, stability, magnetism, and band structure of this material. It is a flexible and stable monolayer exhibiting a low lattice thermal conductivity, which is promising for future thermoelectric devices. Here, the monolayer shows the ferromagnetic ground state with a spin-polarized band structure. Two linear spin-polarized bands cross at the Fermi level forming a Dirac point, which is formed by the p atomic orbitals of the N atoms, indicating that monolayer 1T-LaN 2 is a Dirac spin-gapless semiconductor of p-state. When the spin–orbit coupling is taken into account, a large nontrivial indirect bandgap (86/354 meV) can be opened at the Dirac point, and three chiral edge states are obtained, corresponding to a high Chern number of C = 3, implying that monolayer 1T-LaN 2 is a Chern insulator. Importantly, this kind of band structure is expected to occur in more monolayers of rare-earth-metal dinitride with a 1T structural phase.

2D materials↗

Andreev reflection of quantum Hall states through a quantum point contact

Here, we investigate the interplay between the quantum Hall (QH) effect and superconductivity in InAs surface quantum well (SQW)/NbTiN heterostructures using a quantum point contact (QPC). We use QPC to control the proximity of the edge states to the superconductor. By measuring the upstream and downstream resistances of the device, we investigate the efficiency of Andreev conversion at the InAs/NbTiN interface. Our experimental data is analyzed using the Landauer Büttiker formalism, generalized to allow for Andreev reflection processes. We show that by varying the voltage of the QPC, V QPC , the average Andreev reflection, A, at the QH-SC interface can be tuned from 50% to ~ 10%. The evolution of A with V QPC extracted from the measurements exhibits plateaus separated by regions for which A varies continuously with V QPC . The presence of plateaus suggests that for some ranges of V QPC the QPC might be pinching off almost completely from the QH-SC interface some of the edge modes. Our work shows a new experimental setup to control and advance the understanding of the complex interplay between superconductivity and QH effect in two-dimensional gas systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Aperiodic topological crystalline insulators

Topological crystalline insulators (TCIs) are normally described with topological protection imposed by the crystalline symmetry. In general, yet, the existence of TCI states does not necessitate the periodicity of crystals as long as an essential lattice symmetry can be identified. Here we demonstrate the compatibility of TCIs with aperiodic systems, as exemplified by an octagonal quasicrystal. The aperiodic TCIs we proposed are attributed to a band inversion mechanism, which inverts states with the same parity but opposite eigenvalues of a specific symmetry (such as mirror reflection). The nontrivial topology is characterized by a nonzero integer "mirror Bott index". Furthermore, we demonstrate that the topological edge states and quantized conductance of the aperiodic TCI, which are robust against disorder, can be effectively manipulated by external electric fields. Our findings not only provide a better understanding of electronic topology in relation to symmetry but also extend the experimental realization of topological states to much broader material categories beyond crystals.

36 MATERIALS SCIENCE↗

Small to Large Polaron Behavior Induced by Controlled Interactions in Perovskite Quantum Dot Solids

The polaron is an essential photoexcitation that governs the unique optoelectronic properties of organic–inorganic hybrid halide perovskites, and it has been subject to extensive spectroscopic and theoretical investigation over the past decade. A crucial but underexplored question is how the nature of the photogenerated polarons is impacted by the microscopic perovskite structure and what functional properties this affects. To tackle this question, we chemically tuned the interactions between perovskite quantum dots (QDs) to rationally manipulate the polaron properties. Through a suite of time-resolved spectroscopies, we find that inter-QD interactions open an excited-state channel to form large polaron species, which exhibit enhanced spatial diffusion, slower hot polaron cooling, and a longer intrinsic lifetime. At the same time, polaronic excitons are formed in competition via localized band-edge states, exhibiting strong photoluminescence but are limited by shorter intrinsic lifetimes. Furthermore, this control of polaron type and function through tunable inter-QD interactions not only provides design principles for QD-based materials but also experimentally disentangles polaronic species in hybrid perovskite materials.

14 SOLAR ENERGY↗

Temperature-dependent angle-resolved photoemission spectroscopy study of the Ce 4f states in a possible topological Kondo insulator CeRhAs

The electronic structure of a possible topological Kondo insulator of CeRhAs has been investigated by employing temperature (T)-dependent angle-resolved photoemission spectroscopy (ARPES). Fermi surfaces (FSs) and band structures are successfully measured for three orthogonal crystallographic planes. The measured Fermi-edge states are found to have a three-dimensional (3D) character, contradictory to the proposed topological surface states of the 2 D character. The measured FSs due to the Ce 4f electrons agree well with those from the density functional theory band structures unfolded into the reduced Ce-only unit cell. The theoretically predicted hourglass-type bulk bands along $\bar{X}\bar{S}\bar{X}$ are not clearly resolved, in spite of the evident existence of those band features. Finally, T -dependent ARPES measurements reveal that the coherent Ce 4f states, having two pseudogap structures of Δ 1 ~ 80 meV and Δ 2 ~ 30 meV, persist to remain above 200 K, in agreement with the high Kondo temperature of CeRhAs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Plasmons in Z 2 topological insulators

Here, we study plasmonic excitations in the Kane-Mele model, a two-dimensional Z 2 topological insulator on the honeycomb lattice, using the random phase approximation (RPA). In the topologically nontrivial phase, the model has conducting edge states that traverse the bulk energy gap and display spin-momentum locking. Such a state of matter is called the quantum spin hall (QSH) phase, which is robust against time-reversal (TR) invariant perturbations. We find that in the QSH phase, gapless spin-polarized plasmons can be excited on the edges of the system. The propagation of these plasmons is chiral for each individual spin component and shows spin-momentum locking for both spin components on the same edge. Moreover, we study the effect of external magnetic fields on the gapless edge plasmons. Specifically, out-of-plane magnetic fields delocalize edge plasmons propagating in one direction without affecting the other one, while an in-plane magnetic field can be applied to selectively excite a specific spin-plasmon branch with proper doping or gating to the system. Our findings may have potential applications in novel plasmonic and spintronic devices. We also investigate plasmons in the Kane-Mele model on a finite-sized diamond-shaped nanoflake and observe low-energy plasmons circulating the boundary of the material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗