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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Superconducting Mixers for Far-Infrared Spectroscopy

The goal of this project was to fabricate and test planar arrays of superconducting mixers for the 2-6 THz band. The technology is intended for multi-beam receivers aboard Explorer-class missions and the SOFIA Airborne Observatory. The mixer technology is the superconducting transition-edge microbolometer, which is more commonly known as the Hot-Electron micro-Bolometer (HEB). As originally proposed, two superconducting technologies were to be developed: (1) low-Tc niobium HEBs which could approach quantum-noise-limited sensitivities but require cooling to 2- 4 K, and (2) high-Tc YBCO HEBs with sensitivities 10 times worse but with a relaxed cooling requirement of 30-60 K. The low-Tc devices would be best for astronomy applications on SOFIA, whereas the high-Tc devices would be more suitable for planetary missions using systems without stored cryogens. The work plan called for planar micro-fabrication and initial testing of HEB devices at the NIST Boulder clean-room facility. Subsequent assembly and RF testing of selected devices would be done at the CASA laboratory at U. Colorado. Approximately 1-year after work began on this project, Dr. Eyal Gerecht joined the NIST group, and assumed day-to-day responsibility for Nb-HEB development at NIST outside of micro-fabrication. The YBCO-HEB work was to be guided by Dr. Ron Ono, who was the NIST expert in YBCO technology. Unfortunately, recurrent health problems limited the time Ron could devote to the project in its first year. These problems became aggravated in early 2001, and sadly led to Ron's death in October, 2001. His loss was not only a blow to his friends and associates at NIST, but was mounted by the US superconductivity community at large. With his passing, work on high-Tc HEBs ceased at NIST. There was no one to replace him or his expertise. Our work subsequently shifted solely to Nb-HEB devices. In the sections which follow, our progress in the development of diffusion-cooled Nb-HEB mixers is detailed. To simplify the terminology, these devices will subsequently be called DHEB mixers to distinguish them from phonon-cooled devices (PHEBs).

Betz, A. L.↗
NASA NTRS2014

Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions. Contrast extinction analysis of these dislocation lines reveals they are edge type basal plane dislocations that track the growth direction. Polytype phase transition and stacking faults were observed by high-resolution TEM (HRTEM), in agreement with SWBXT and Raman scattering.

Single Crystal↗
NASA NTRS1999

Preliminary Performance of CdZnTe Imaging Detector Prototypes

The promise of good energy and spatial resolution coupled with high efficiency and near-room-temperature operation has fuelled a large International effort to develop Cadmium-Zinc-Telluride (CdZnTe) for the hard-x-ray region. We present here preliminary results from our development of small-pixel imaging arrays fabricated on 5x5x1-mm and 5x5x2-mm spectroscopy and discriminator-grade material. Each array has 16 (4x4) 0.65-mm gold readout pads on a 0.75-mm pitch, with each pad connected to a discrete preamplifier via a pulse-welded gold wire. Each array is mounted on a 3-stage Peltier cooler and housed in an ion-pump-evacuated housing which also contains a hybrid micro-assembly for the 16 channels of electronics. We have investigated the energy resolution and approximate photopeak efficiency for each pixel at several energies and have used an ultra-fine beam x-ray generator to probe the performance at the pixel boundaries. Both arrays gave similar results, and at an optimum temperature of -20 C we achieved between 2 and 3% FWHM energy resolution at 60 keV and around 15% at 5.9 keV. We found that all the charge was contained within 1 pixel until very close to the pixels edge, where it would start to be shared with its neighbor. Even between pixels, all the charge would be appropriately shared with no apparently loss of efficiency or resolution. Full details of these measurements will be presented, together with their implications for future imaging-spectroscopy applications.

Ramsey, B.↗
NASA NTRS2006

Microstructural Study of Micron-Sized Craters Simulating Stardust Impacts in Aluminum 1100 Targets

Various microscopic techniques were used to characterize experimental micro- craters in aluminium foils to prepare for the comprehensive analysis of the cometary and interstellar particle impacts in aluminium foils to be returned by the Stardust mission. First, SEM (Scanning Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy) were used to study the morphology of the impact craters and the bulk composition of the residues left by soda-lime glass impactors. A more detailed structural and compositional study of impactor remnants was then performed using TEM (Transmission Electron Microscopy), EDS, and electron diffraction methods. The TEM samples were prepared by Focused Ion Beam (FIB) methods. This technique proved to be especially valuable in studying impact crater residues and impact crater morphology. Finally, we also showed that InfraRed microscopy (IR) can be a quick and reliable tool for such investigations. The combination of all of these tools enables a complete microscopic characterization of the craters.

Leroux, Hugues↗
NASA NTRS2005

X-Ray Fluorescence Solvent Detection at the Substrate-Adhesive Interface

With environmental regulations limiting the use of volatile organic compounds, low-vapor pressure solvents have replaced traditional degreasing solvents for bond substrate preparation. When used to clean and prepare porous bond substrates such as phenolic composites, low vapor pressure solvents can penetrate deep into substrate pore networks and remain there for extended periods. Trapped solvents can interact with applied adhesives either prior to or during cure, potentially compromising bond properties. Currently, methods for characterizing solvent time-depth profiles in bond substrates are limited to bulk gravimetric or sectioning techniques. While sectioning techniques such as microtome allow construction of solvent depth profiles, their depth resolution and reliability are limited by substrate type. Sectioning techniques are particularly limited near the adhesive-substrate interface where depth resolution is further limited by adhesive-substrate hardness and, in the case of a partially cured adhesive, mechanical properties differences. Additionally, sectioning techniques cannot provide information about lateral solvent diffusion. Cross-section component mapping is an alternative method for measuring solvent migration in porous substrates that eliminates the issues associated with sectioning techniques. With cross-section mapping, the solvent-wiped substrate is sectioned perpendicular rather than parallel to the wiped surface, and the sectioned surface is analyzed for the solvent or solvent components of interest using a two-dimensional mapping or imaging technique. Solvent mapping can be performed using either direct or indirect methods. With a direct method, one or more solvent components are mapped using red or Raman spectroscopy together with a moveable sample stage and/or focal plane array detector. With an indirect method, an elemental "tag" not present in the substrate is added to the solvent before the substrate is wiped. Following cross sectioning, the tag element can then be mapped by its characteristic x-ray emission using either x-ray fluorescence, or electron-beam energy-and wavelength-dispersive x-ray spectrometry. The direct mapping techniques avoid issues of different diffusion or migration rates of solvents and elemental tags, while the indirect techniques avoid spectral resolution issues in cases where solvents and substrates have adjacent or overlapping peaks. In this study, cross-section component indirect mapping is being evaluated as a method for measuring migration of d-limonene based solvents in glass-cloth phenolic composite (GCP) prior to and during subsequent bonding and epoxy adhesive cure.

Wurth, Laura↗
NASA NTRS1988

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Valco, George J.↗
NASA NTRS1987

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Lin, T. L.↗
NASA NTRS1986

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

Dhar, S.↗
NASA NTRS2000

Dusty Plasma Experiments Using an Electrodynamic Balance

Knowledge of the formation, distribution, physical, chemical and optical characteristics of interstellar, interplanetary, and planetary dust grains provide valuable information about many issues dealing with the origin and formation of the solar system bodies, interplanetary and interstellar environments as well as various industrial processes. Understanding the microphysics of individual grains and their interaction with the surrounding environment is key to properly model various conditions and interpret existing data. The theory and models of individual dust grains are well developed for environments that vary from dense planetary atmospheres to dusty plasmas to diffuse environments such is interplanetary space. However, experimental investigations of individual dust grains in equilibrium are less common, perhaps due to the difficult of these experiments. Laboratory measurements of dust grains have primarily measured ensemble properties or transient properties of single grains. A technique developed in the 1950's for ion spectroscopy, known as a quadrupole trap or 'Paul Trap', has recently been used to investigate single micron-sized dust grains. This scaled ion trap called an electrodynamic balance has been used for atmospheric aerosol research. A description of this technique is provided. Recent results from experiments to investigate the equilibrium potential of dust grains exposed to far ultraviolet light or to -,in electron or ion beam are presented. This laboratory technique ]ends itself to many applications that relate to planetary atmospheres, heliospheric environments, pre-stellar and pre-planetary conditions, and industrial settings. Several planned experimental approaches are presented. Potential experiments to investigate the interaction of multiple dust grains using an electrodynamic balance are proposed.

Spann, J. F.↗
NASA NTRS1978

The use of an ion-beam source to alter the surface morphology of biological implant materials

An electron-bombardment ion-thruster was used as a neutralized-ion-beam sputtering source to texture the surfaces of biological implant materials. The materials investigated included 316 stainless steel; titanium-6% aluminum, 4% vanadium; cobalt-20% chromium, 15% tungsten; cobalt-35% nickel, 20% chromium, 10% molybdenum; polytetrafluoroethylene; polyoxymethylene; silicone and polyurethane copolymer; 32%-carbon-impregnated polyolefin; segmented polyurethane; silicone rubber; and alumina. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion-texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion-textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion-textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane have been obtained.

Weigand, A. J.↗
NASA NTRS2003

Microcalorimeters for High Resolution X-Ray Spectroscopy of Laboratory and Astrophysical Plasmas

The proposal has three major objectives. The first focuses on advanced neutron-transmutation-doped (NTD)-based microcalorimeter development. Our goal is to develop an array of microcalorimeters with sub- 5 eV energy resolution that can operate with pile-up-free throughput of at least 100 Hz per pixel. The second objective is to establish our microcalorimeter as an essential x-ray diagnostic for laboratory astrophysics studies. We propose to develop a dedicated microcalorimeter spectrometer for the EBIT (electron beam ion trap). This instrument will incorporate the latest detector and cryogenic technology that we have available. The third objective is to investigate innovative ideas related to possible flight opportunities. These include compact, long lived cryo-systems, ultra-low temperature cold stages, low mass and low power electronics, and novel assemblies of thin windows with high x-ray transmission.

Silver, E.↗
NASA NTRS2005

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Carlin, J. A.↗
NASA NTRS1994

Measurements of striae in CR+ doped YAG laser crystals

Striations in Czochralski (CZ) grown crystals have been observed in materials such as GaAs, silicon, photorefractive crystals used for data storage, potassium titanyl phosphate crystals and LiNbO3. Several techniques have been used for investigating these defects including electron microscopy, laser scanning tomography, selective photoetching, X-ray diffuse scattering, interference orthoscopy, laser interferometry and micro-Fourier transform infrared spectroscopy mapping. A 2mm thick sample of the material to be investigated is illuminated with light that is absorbed and non-absorbed by the ion concentration to be observed. The back surface of the sample is focused onto a solid-state image detector and images of the input beam and absorbed (and diffracted) beams are captured at two wavelengths. The variation of the coefficient of absorption asa function of distance on the sample can be derived from these measurements. A Big Sky Software Beamcode system is used to capture and display images. Software has been written to convert the Beamcode data files to a format that can be imported into a spreadsheet program such as Quatro Pro. The spreadsheet is then used to manipulate and display data. A model of the intensity map of the striae collected by the imaging system has been proposed and a data analysis procedure derived. From this, the variability of the attenuation coefficient alpha can be generated. Preliminary results show that alpha may vary by a factor of four or five over distances of 100 mu m. Potential errors and problems have been discovered and additional experiments and improvements to the experimental setup are in progress and we must now show that the measurement techniques and data analysis procedures provide 'real' information. Striae are clearly visible at all wavelengths including white light. Their basic spatial frequency does not change radically, at least when changing from blue to green to white light. Further experimental and theoretical work can be done to improve the data collection techniques and to verify the data analysis procedures.

Cady, Fredrick M.↗
NASA NTRS1987

A high flux source of swift oxygen atoms

A source of swift oxygen atoms is described which has several unique features. A high current ion beam is produced by a microwave discharge, accelerated to 10 keV and the mass selected by a modified Du Pont 21-110 mass spectrometer. The O(+) beam exciting the mass spectrometer is focused into a rectangular shape with an energy spread of less than 1 eV. The next section of the machine decelerates the ion beam into a counterpropagating electron beam in order to minimize space charge effects. After deceleration, the ion beam intersects at 90 deg, a neutral oxygen atom beam, which via resonant charge exchange produces a mixture of O(+) and O. Any remaining O(+) are swept out of the beam by an electric field and differentially pumped away while the desired O beam, collimated by slits, impinges on the target. In situ monitoring of the target surface is done by X-ray photoelectron or Auger spectroscopy. Faraday cups provide flux measurements in the ion sections while the neutral flux is determined by a special torsion balance or by a quadrupole mass spectrometer specially adapted for swift atoms. While the vacuum from the source through the mass spectrometer is maintained by diffusion pumps, the rest of the machine is UHV.

Fink, M.↗
NASA NTRS2005

Spectroscopy of Jet-Cooled Neutral and Ionized PAHs: Implications for Interstellar Dust

We present the gas-phase spectroscopy of neutral and ionized polycyclic aromatic hydrocarbons (PAHs) measured in the W-Visible-NIR range in an astrophysically relevant environment. These measurements provide data on PAHs and nanometer sized particles that can now be directly compared to astronomical observations. The harsh physical conditions of the IS medium - characterized by a low temperature, an absence of collisions and strong VUV radiation fields - are simulated in the laborat'ory by associating a molecular beam with an ionizing discharge to generate a cold plasma expansion. PAH ions are formed from the neutral precursors in an isolated environment at low temperature ($\sim lOO$-K). The spectra of neutral and ionized PAHs are measured using the high sensitivity methods of cavity ring down spectroscopy (CRDS) and multiplex integrated cavity output spectroscopy (MICOS). These experiments provide unique information on the spectra of free, cold large carbon molecules and ions in the gas phase. The electronic bands measured for ionized PAH are found to be intrinsically broad ($\geq$20 cm$^{-l}$) while the bands associated with the neutral precursors are narrower (of the order of 2 - 10 cm$^{-l}$). The laboratory data are discussed and compared with recent astronomical spectra of large and narrow DIBs and with the spectra of circumstellar environments of selected carbon stars (see contribution of Cami et al.) and the implications for the interstellar PAH population are derived. Preliminary results also show that carbon nanoparticles are formed during the short residence time of the precursors in the plasma. This finding holds great potential for understanding the formation process of interstellar grains.

Salama, F.↗
NASA NTRS1979

Auger spectroscopy analysis of lubrication with zinc dialkyldithiophosphate of several metal combinations in sliding contact

Sliding friction experiments were conducted with aluminum and other riders rubbing on disks of various elemental metals in the presence of a thin film of zinc dialkyldithiophosphate (ZDP). Auger emission spectroscopy was used to in situ monitor the changes in surface chemistry with rubbing under various loads. The metal disks examined included iron, titanium, rhodium, tungsten, molybdenum, and copper. For equivalent films of ZDP the film is a more effective lubricant for some metals than it is for others. The important active element in the compound varies with the metal lubricated and is a function of metal chemistry. The zinc in the ZDP is susceptible to electron beam induced desorption.

Buckley, D. H.↗
NASA NTRS2010

Simultaneous Spectral Temporal Adaptive Raman Spectrometer - SSTARS

Raman spectroscopy is a prime candidate for the next generation of planetary instruments, as it addresses the primary goal of mineralogical analysis, which is structure and composition. However, large fluorescence return from many mineral samples under visible light excitation can render Raman spectra unattainable. Using the described approach, Raman and fluorescence, which occur on different time scales, can be simultaneously obtained from mineral samples using a compact instrument in a planetary environment. This new approach is taken based on the use of time-resolved spectroscopy for removing the fluorescence background from Raman spectra in the laboratory. In the SSTARS instrument, a visible excitation source (a green, pulsed laser) is used to generate Raman and fluorescence signals in a mineral sample. A spectral notch filter eliminates the directly reflected beam. A grating then disperses the signal spectrally, and a streak camera provides temporal resolution. The output of the streak camera is imaged on the CCD (charge-coupled device), and the data are read out electronically. By adjusting the sweep speed of the streak camera, anywhere from picoseconds to milliseconds, it is possible to resolve Raman spectra from numerous fluorescence spectra in the same sample. The key features of SSTARS include a compact streak tube capable of picosecond time resolution for collection of simultaneous spectral and temporal information, adaptive streak tube electronics that can rapidly change from one sweep rate to another over ranges of picoseconds to milliseconds, enabling collection of both Raman and fluorescence signatures versus time and wavelength, and Synchroscan integration that allows for a compact, low-power laser without compromising ultimate sensitivity.

Blacksberg, Jordana↗
NASA NTRS1986

Angle-resolved Auger electron spectra induced by neon ion impact on aluminum

Auger electron emission from aluminum bombarded with 1 to 5 keV neon ions was studied by angle-resolved electron spectroscopy. The position and shape of the spectral features depended on the incident ion energy, angle of ion incidence, and electron take-off angle with respect to the aluminum surface. These spectral dependencies were interpreted in terms of the Doppler shift given to the Auger electron velocity by the excited atom ejected into the vacuum. For oblique ion incidence it is concluded that a flux of high energy atoms are ejected in a direction close to the projection of the ion beam on the target surface. In addition, a new spectral feature was found and identified as due to Auger emission from excited neon in the aluminum matrix.

Pepper, S. V.↗