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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Development and characterization of Nb3Sn/Al2O3 superconducting multilayers for particle accelerators

Abstract Superconducting radio-frequency (SRF) resonator cavities provide extremely high quality factors > 10 10 at 1–2 GHz and 2 K in large linear accelerators of high-energy particles. The maximum accelerating field of SRF cavities is limited by penetration of vortices into the superconductor. Present state-of-the-art Nb cavities can withstand up to 50 MV/m accelerating gradients and magnetic fields of 200–240 mT which destroy the low-dissipative Meissner state. Achieving higher accelerating gradients requires superconductors with higher thermodynamic critical fields, of which Nb 3 Sn has emerged as a leading material for the next generation accelerators. To overcome the problem of low vortex penetration field in Nb 3 Sn, it has been proposed to coat Nb cavities with thin film Nb 3 Sn multilayers with dielectric interlayers. Here, we report the growth and multi-technique characterization of stoichiometric Nb 3 Sn/Al 2 O 3 multilayers with good superconducting and RF properties. We developed an adsorption-controlled growth process by co-sputtering Nb and Sn at high temperatures with a high overpressure of Sn. The cross-sectional scanning electron transmission microscope images show no interdiffusion between Al 2 O 3 and Nb 3 Sn. Low-field RF measurements suggest that our multilayers have quality factor comparable with cavity-grade Nb at 4.2 K. These results provide a materials platform for the development and optimization of high-performance SIS multilayers which could overcome the intrinsic limits of the Nb cavity technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

Abstract We present the fabrication of a MoS 2−x Se x thin film from a co-sputtering process using MoS 2 and MoSe 2 commercial targets with 99.9% purity. The sputtering of the MoS 2 and MoSe 2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS 2−x Se x phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS 2−x Se x thin film, indicated by a blue shift in the A 1g and E 1 g vibrational modes at 355 cm −1 and 255 cm −1 , respectively. This work is complemented by computing the thermodynamic stability of a MoS 2−x Se x phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials’ fabrication and target latent applications of such structures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Simultaneous thickness and thermal conductivity measurements of thinned silicon from 100 nm to 17 μm

Studies of size effects on thermal conductivity typically necessitate the fabrication of a comprehensive film thickness series. In this Letter, we demonstrate how material fabricated in a wedged geometry can enable similar, yet higher-throughput measurements to accelerate experimental analysis. Frequency domain thermoreflectance (FDTR) is used to simultaneously determine the thermal conductivity and thickness of a wedged silicon film for thicknesses between 100 nm and 17 μm by considering these features as fitting parameters in a thermal model. FDTR-deduced thicknesses are compared to values obtained from cross-sectional scanning electron microscopy, and corresponding thermal conductivity measurements are compared against several thickness-dependent analytical models based upon solutions to the Boltzmann transport equation. Our results demonstrate how the insight gained from a series of thin films can be obtained via fabrication of a single sample.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. Here, this work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ~10 7 /cm 2 after ~3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Low-energy electron driven reactions in 2-bromo-5-nitrothiazole

Thiazole derivatives are biologically relevant molecules, used also in pharmaceutical applications. Herein, we report results for electron attachment to 2-bromo-5-nitrothiazole (BNT) in the gas phase. Employing two crossed electron–molecule beam experiments, we determined the efficiency curves of various fragment anions as a function of the initial electron energy between about 0 and 10 eV as well as the emission angle and kinetic energy distributions of Br− and NO2− ions formed from a resonance near 4 eV. The experiments were supported by quantum chemical calculations, exploring possible dissociation pathways along with their reaction energies. We also compared the electron attachment characteristics of BNT with those of the native thiazole molecule by performing electron attachment experiments and calculations for this molecule as well. Compared to thiazole, which is primarily degraded only by electrons with kinetic energies between about 5 and 10 eV, BNT is susceptible to low-energy electrons near 0 eV with enhanced cross section for (dissociative) electron attachment. However, although BNT offers two localization sites with high electron affinity (Br and NO2 moieties), we do not find the corresponding anions as the dominant negatively charged species formed upon electron attachment. Instead, the reaction channels with an abstraction of Br and NO2 as neutral radicals prevail, accompanied by the opening of the thiazole ring due to the relatively weak C–S bond.

Chen, Jiakuan (ORCID:0009000729608641)↗
DOE OSTI2026

Crystallographic registry in epitaxial V3O5 thin films

Crystallographic orientation plays a central role in determining transport properties in correlated oxides with low-hysteresis metal–insulator transitions. Here, V3O5 thin films were grown on Al2O3 (0001) and their crystallographic registry was evaluated using x-ray diffraction and cross-sectional transmission electron microscopy. θ–2θ measurements show a single out-of-plane orientation defined by the (202) reflection. Azimuthal φ-scans of the V3O5 (310) reflection exhibit twelve discrete maxima over 360°, indicating a finite set of in-plane orientations imposed by the substrate symmetry. High-resolution TEM and fast Fourier transform analysis confirm crystallographic coherence at the film–substrate interface. The electrical conductivity exhibits a metal–insulator transition at TMIT ≈ 423 K with no measurable thermal hysteresis and a total change of ~1.6 orders of magnitude between 300 and 480 K. These results establish crystallographic registry in epitaxial V3O5 thin films and provide a structurally well-defined system for future studies of orientation-dependent transport.\r\nT

36 MATERIALS SCIENCE↗
DOE OSTI2023

Deuterium supersaturated surface layer in tungsten: ion energy dependence

Abstract Properties of deuterium (D) supersaturated surface layers (DSSLs) formed in tungsten (W), such as thickness, internal microstructures, and D retention, are experimentally investigated as a function of the incident ion energy, E i . W samples were exposed to D plasmas in the PISCES-A linear plasma device in a range of E i ∼ 45–175 eV, while other plasma exposure parameters were fixed: sample temperature, T s , ∼423 K, ion flux, Γ i , ∼1.2 × 10 21 m −2 s −1 , and fluence, Φ i , ∼3.0 × 10 24 m −2 . High-resolution, cross-sectional, transmission electron microscopy observations confirm that (1) a DSSL forms even at the lowest E i ∼ 45 eV, (2) the DSSL thickness, Δ t DSSL , is found to decrease with decreasing E i from ∼11–12 nm at E i ∼ 175 eV to ∼5–6 nm at ∼45 eV, and to agree with approximately the maximum implantation depth calculated using SDTrimSP, and (3) high-density D nanobubbles with a diameter of ∼1 nm or less exist inside the DSSL, which is deemed to validate a theory-predicted vacancy stabilization process due to trapping of a solute D atom(s). Utilizing a D areal density of ∼4.2 × 10 19 m −2 in the first 14 nm from the surface at E i ∼ 75 eV from nuclear reaction analysis and the measured E i dependence of Δ t DSSL , our previous laser-induced breakdown spectroscopy data is updated: both dynamic and static D retention increase with decreasing E i , and the D/W atomic fraction during plasma exposure reaches ∼0.3 at E i ∼ 45 eV. A possible DSSL formation mechanism is proposed.

Physics↗
DOE OSTI2023

The dependence of tungsten fuzz layer thickness and porosity on tungsten deposition rate and helium ion fluence

Abstract Fuzz formation on a heated tungsten surface in the presence of a helium-containing plasma and tungsten deposition source was investigated. Tungsten samples were exposed at 1123 K to pure helium plasma with ion incident energy of 76 eV, W/He ion flux ratio of ∼ 0.4 × 10 − 4 , and varied helium ion fluence from 0.18 to 3.4 × 10 26 m −2 . Fuzz thickness was measured by cross-sectional scanning electron microscopy to increase from 0.22 to 15 µ m with increasing helium ion fluence. No indication of saturation in fuzz thickness at high fluence was observed, in contrast to fuzz produced on a tungsten surface without tungsten deposition. Additional tungsten samples were exposed at 1123 K to pure helium plasma with ion incident energy of 76 eV, helium ion fluence of ∼ 3.4 × 10 26 m −2 , and varied W/He ion flux ratio from 0.26 to 3.0 × 10 − 4 . Fuzz thickness increased from 7.5 to 120 µ m with increasing W/He ion ratio. A final sample exposed at 1123 K to a mixed helium-deuterium plasma with ion incident energy of 76 eV, helium ion fluence of 0.18 × 10 26 m −2 , and W/He ion flux ratio of 2.2 × 10 − 4 developed nearly identical fuzz structures to that developed in a pure He plasma. As a function of deposited tungsten fluence, all results were found to trace out a single layer-growth curve given by a power law relation, indicating that fuzz thickness is independent of the W/He ion flux ratio in the range investigated and independent of any deuterium present in the plasma. As a result, for tungsten plasma facing walls in magnetic fusion devices at 1000–2000 K with 10 −4 W/He ion flux ratio, fuzz with thicknesses greater than hundreds of microns may form in as little as 10 4 s (in the absence of ELM-induced erosion or annealing), and may more significantly affect its thermophysical properties than fuzz generated without a tungsten deposition source.

Physics↗
DOE OSTI2026

Relativistic corrections for lepton-nucleus scattering in the short-time approximation

Here, we present an approach for including relativistic corrections in lepton-nucleus scattering calculations within the short-time approximation (STA). Previous ab initio studies employed electromagnetic currents expanded in powers of 𝑞/𝑚, where 𝑞 is the momentum transfer and 𝑚 is the nucleon mass, restricting their validity to low-𝑞 kinematics. We adopt an expansion scheme that treats the initial nucleon momentum perturbatively while allowing for arbitrary momentum transfer, thereby extending the applicability of the STA to high-𝑞 regimes. Additionally, we incorporate a relativistic treatment of the two-nucleon final-state energies. Calculations for 3 He and 4 He inclusive electron-scattering cross sections show a substantial improvement over previous results, achieving good agreement with experimental data in the quasi-elastic region for both low- and high-momentum transfer.

Andreoli, Lorenzo [Old Dominion Univ., Norfolk, VA↗
DOE OSTI2026

Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium

Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Searches for CE ν NS and physics beyond the standard model using Skipper-CCDs at CONNIE

The Coherent Neutrino-Nucleus Interaction Experiment (CONNIE) aims to detect the coherent scattering ( CE ν NS ) of reactor antineutrinos off silicon nuclei using thick fully depleted high-resistivity silicon CCDs. Two Skipper-CCD sensors with subelectron readout noise capability were installed at the experiment next to the Angra-2 reactor in 2021, making CONNIE the first experiment to employ Skipper-CCDs for reactor neutrino detection. We report on the performance of the Skipper-CCDs, the new data processing, data quality, and event selection for CE ν NS interactions, which enable CONNIE to reach a record low detection threshold of 15 eV. The data were collected over 300 days in 2021–2022 and correspond to exposures of 14.9 g-days with the reactor-on and 3.5 g-days with the reactor-off. The difference between the reactor-on and off event rates shows no excess and yields upper limits for the neutrino interaction rates, comparable with previous CONNIE limits from standard CCDs and higher exposures. Searches for new neutrino interactions beyond the Standard Model improve the previous CONNIE limit on a simplified model with light vector mediators. A first dark matter (DM) search by diurnal modulation by CONNIE obtains the best limits on the DM-electron scattering cross section by a surface-level experiment. These promising results, obtained using a very small-mass sensor, illustrate the potential of Skipper-CCDs to probe rare neutrino interactions and motivate the plans to increase the detector mass in the near future.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Measurement of R = σ L / σ T and the separated longitudinal and transverse structure functions in the nucleon-resonance region

Here we report on a detailed study of longitudinal strength in the nucleon resonance region, presenting new results from inclusive electron-proton cross sections measured at Jefferson Lab Hall C in the four-momentum transfer range 0.2 < Q 2 < 5.5 GeV 2 . The data have been used to accurately perform over 170 Rosenbluth-type longitudinal/transverse separations. The precision R = $\sigma_{L} /\sigma _{T}$ data are presented here, along with the first separate values of the inelastic structure functions F 1 and F L in this regime. The resonance longitudinal component is found to be significant. With the new data, quark-hadron duality is observed above Q 2 = 1 GeV 2 in the separated structure functions independently.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

First Measurement of the EMC effect in 10 B and 11 B

The nuclear dependence of the inclusive inelastic electron scattering cross section (the EMC effect) has been measured for the first time in 10 B and 11 B. Previous measurements of the EMC effect in A ≤ 12 nuclei showed an unexpected nuclear dependence; 10 B and 11 B were measured to explore the EMC effect in this region in more detail. Results are presented for 9 Be, 10 B, 11 B, and 12 C at an incident beam energy of 10.6 GeV. The EMC effect in the boron isotopes was found to be similar to that for 9 Be and 12 C, yielding almost no nuclear dependence in the EMC effect in the range A = 4–12. Furthermore, this represents important new data supporting the hypothesis that the EMC effect depends primarily on the local nuclear environment due to the cluster structure of these nuclei.

6 ≤ A ≤ 19↗
DOE OSTI2023

Interfacing electron and neutrino quasielastic scattering cross sections with the spectral function in GENIE

Progress in neutrino-nucleus cross section models is being driven by the need for highly accurate predictions for the neutrino oscillation community. These sophisticated models are being developed within a microscopic description of the nucleus with the goal of encompassing all reaction modes relevant for the accelerator neutrino program. The disconnect between these microscopic models and the event generators that will be used in the next generation of experiments represents a critical obstacle that must be overcome in order to precisely measure the neutrino oscillation parameters. To this end we have developed a hadron tensor interface for lepton-nucleus quasielastic (QE) scattering within the GENIE event generator as a proof of principle, with the broader goal of creating an efficient pipeline for incorporating advanced theoretical models in event generators. As a demonstration of this interface we have implemented the spectral function model into GENIE by connecting theorist provided fortran code through the hadron tensor interface. The spectral function model offers a more complete description of the nuclear ground state, as well as the ability to provide quantifiable theoretical uncertainties. Finally, we validate this implementation and compare its predictions against data and against QE models already available in GENIE.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Constraining dark matter-proton scattering from molecular cloud ionization

Optically dense clouds in the interstellar medium composed predominantly of molecular hydrogen, known as molecular clouds, are sensitive to energy injection in the form of photon absorption, cosmic-ray scattering, and dark matter (DM) scattering. The ionization rates in dense molecular clouds are heavily constrained by observations of abundances of various molecular tracers. Recent studies have set constraints on the DM-electron scattering cross section using measurements of ionization rates in dense molecular clouds. Here we calculate the analogous bounds on the DM-proton cross section using the molecular Migdal effect, recently adapted from the neutron scattering literature to the DM context. These bounds may be the strongest limits on a strongly coupled DM subfraction, and represent the first application of the Migdal effect to astrophysical systems. Published by the American Physical Society 2024

Astronomy & Astrophysics↗
DOE OSTI2025

Information divergences to parametrize astrophysical uncertainties in dark matter direct detection

Astrophysical uncertainties in dark matter direct detection experiments are typically addressed by parametrizing the velocity distribution in terms of a few uncertain parameters that vary around some central values. Here we propose a method to optimize over all velocity distributions lying within a given distance measure from a central distribution. We discretize the dark matter velocity distribution as a superposition of streams and use a variety of information divergences to parametrize its uncertainties. With this, we bracket the limits on the dark matter–nucleon and dark matter–electron scattering cross sections, when the true dark matter velocity distribution deviates from the commonly assumed Maxwell-Boltzmann form. The methodology pursued is general and could be applied to other physics scenarios where a given physical observable depends on a function that is uncertain.

particle astrophysics↗
DOE OSTI2024

Interfacial magnetic characteristics of nearly compensated gadolinium iron garnet

Reports on spin Hall magnetoresistance, magnonic spin currents from thermal gradients, and spin transfertorque magnetic random-access memory using compensated ferrimagnets largely discuss bulk magnetization but lack consideration of depth profiles or interfacial characteristics. Here, magnetic and structural characterization of profiles and interfaces was performed for nearly compensated gadolinium iron garnet (GdIG) thin films. X-ray diffraction and reciprocal space maps show that sputter deposited GdIG on Si is polycrystalline with the desired cubic garnet phase, and GdIG on gadolinium gallium garnet (GGG) is epitaxial with <0.06% compressive strain. Temperature-dependent magnetometry confirms the compensation temperatures of GGG/GdIG and Si/GdIG to be 285 and 260 K, respectively, both near room temperature. Interestingly, these measurements suggest the presence of unsaturated rare-earth moments, which result in a characteristic hysteresis between heating and cooling sequences in the magnetization-temperature curves at zero field. Depth-profile measurements from polarized neutron reflectometry (PNR) indicate up to 91% volume fraction in GdIG on Si. At the interface, PNR reveals a region containing magnetized Fe-doped GGG, a low-density GdIG at the GGG/GdIG interface, and a thin magnetically dead layer at the Si/GdIG interface. Cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy confirm the assessment of PNR. In conclusion, the magnetic characteristics of interfacial regions are attributed to intermixing of Fe-Ga at the GGG/GdIG interface and the presence of amorphous Fe-Si at the Si/GdIG interface.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Inclusive electron scattering in the resonance region off a hydrogen target with CLAS12

Inclusive electron scattering cross sections off a hydrogen target at a beam energy of 10.6 GeV have been measured with data collected from the CLAS12 spectrometer at Jefferson Laboratory. These first absolute cross sections from CLAS12 cover a wide kinematic area in invariant mass 𝑊 of the final state hadrons from the pion threshold up to 2.5 GeV for each bin in virtual photon four-momentum transfer squared 𝑄 2 from 2.55 to 10.4GeV 2 owing to the large scattering angle acceptance of the CLAS12 detector. Comparison of the cross sections with the resonant contributions computed from the CLAS results on the nucleon resonance electroexcitation amplitudes has demonstrated a promising opportunity to extend the information on their 𝑄 2 evolution up to 10 GeV 2 . Together these results from CLAS and CLAS12 offer good prospects for probing the nucleon parton distributions at large fractional parton momenta 𝑥 for 𝑊<2.5 GeV, while covering the range of distances where the transition from the strongly coupled to the perturbative regimes is expected.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗