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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Determination of carrier concentration and compensation microprofiles in GaAs

Simultaneous microprofiling of semiconductor free carrier, donor, and acceptor concentrations was achieved for the first time from the absolute value of the free carrier absorption coefficient and its wavelength dependence determined by IR absorption in a scanning mode. Employing Ge- and Si-doped melt-grown GaAs, striking differences were found between the variations of electron concentration and those of ionized impurity concentrations. These results showed clearly that the electronic characteristics of this material are controlled by amphoteric doping and deviations from stoichiometry rather than by impurity segregation.

Jastrzebski, L.↗
NASA NTRS1993

Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy

By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p(+) doping spike and the Schottky image force. The p(+) doping spikes were grown by molecular beam epitaxy at 450 C, using elemental boron as the dopant source, with doping concentrations ranging from 5 x 10 exp 19 to 2 x 10 exp 20/cu cm. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p(+) spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.

Lin, T. L.↗
NASA NTRS2011

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

detectors↗
NASA NTRS1971

Radiation damage annealing kinetics

Various spectral response studies are reported that assess lithium doping effects on the recovery process of electron damaged silicon solar cells. Measurements of both the minority carrier lifetimes and the energy level spectrum of the defects are used to predict lifetime damage constants and carrier removal rates relevant to the operation of the solar lithium-doped cell and its annealing kinetics.

Dresselhaus, M. S.↗
NASA NTRS1981

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. I - Defect structure of undoped and copper doped Hg/0.8/Cd/0.2/Te. II - Defect structure of indium-doped Hg/0.8/Cd/0.2/Te

Hall effect and mobility measurements were conducted on undoped Hg(0.8)Cd(0.2)Te crystals which were quenched to room temperature after being subjected to equilibration at temperatures ranging from 400 to 655 C in various Hg atmospheres. The variation of the hole concentration in the cooled crystals at 77 K as a function of Hg's partial pressure at the equilibration temperature, together with a comparison of the hole mobility in the undoped samples with that in copper-doped ones, yields a defect model for the undoped crystals according to which they are intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. In the second part of this paper, the effects of indium doping are considered. The concentration of electrons obtained in the cooled crystals was found to be lower than the intrinsic carrier concentration at the equilibration temperatures. A defect model is proposed according to which most of the indium is incorporated as In2Te3(s) dissolved in the crystal, with only a small fraction of indium acting as single donors occupying Hg lattice sites.

Vydyanath, H. R.↗
NASA NTRS1985

Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

The 77 K operation of AlGaAs/InGaAs MODFETs has been investigated. The structures, grown by MBE, make use of a 200 A undoped In(0.15)Ga(0.85)As quantum well for electron confinement and an Si-doped Al(0.15)Ga(0.85)As top barrier. The MODFETs with 1 micron gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction makes it possible to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.

Masselink, W. T.↗
NASA NTRS1994

The Effect of Strain on the Base Resistance and Transit Time of Ungraded and Compositional-Graded SiGe HBTs

A theoretical study of the effects of the strain on the base properties of ungraded and compositional-graded n-p-n SiGe Heterojunction Bipolar Transistors (HBT) is presented. The dependencies of the transverse hole mobility and longitudinal electron mobility upon strain, composition and doping, are formulated using published Monte-Carlo data and, consequently, the base resistance and transit time are modeled and calculated. The results are compared to results obtained using common formulas that ignore these dependencies. The differences between the two sets of results are shown. The paper's conclusion is that for the design, analysis and optimization of high frequency SiGe HBTs the strain effects on the base properties cannot be ignored.

Rosenfeld, D.↗
NASA NTRS2021

Stress-Activated Electric Currents in Icy Planetary Bodies: H2O2-Doped H2O Ices

Planetary satellites such as the Jovian moon Europa and several Kuiper Belt objects (including Pluto) have surfaces consisting largely of H2O ice, which is brittle and behaves as a rock at the low temperatures that prevail in the outer Solar System. Several of those ice-crusted bodies show evidence of tectonic activity indicating high levels of stress. This paper reports on laboratory experiments with pure H2O ice and H2O2–doped H2O ices with H2O2 concentration levels comparable to those in the ices of Europa. Elongated rectangular ice blocks at T = −81 °C [192 K] were stressed at one end to test whether electric currents are generated and capable of flowing down the stress gradient. Pure H2O ice was found to not produce currents above the 10−10 A background level except for occasional transients in the 10−9–10−8 A range during fracture or rapid plastic deformation due to electrons, e’. By contrast, stressing H2O2-doped H2O ices consistently produced electric currents in the 10−7–10−5 A range, due to holes, h•, propagating from the stressed end to the unstressed end. The h• charge carriers are generated by the break-up of peroxy bonds of H2O2 molecules, leading to O−, equivalent to defect electrons or holes h• in the O2− matrix.

Water ice↗
NASA NTRS2002

Characterization of Corning EPMA Standard Glasses 95IRV, 95IRW, and 95IRX

The preparation, synthesis, and characterization of Corning trace-element glasses 95IRV, 95IRW, and 95IRX by bulk chemical and electron microprobe techniques is discussed. Working values for the doped elements in the 95-series glasses are established. Blank values have been determined by both bulk chemical and electron microprobe analysis, and important x-ray interferences are highlighted. Chemical homogeneity both within a rod cross-section, and along cane length has been documented. These glasses are standard reference materials intended for use as both primary and secondary electron microprobe standards.

Carpenter, Paul K.↗
NASA NTRS1979

Artificial stimulation of auroral electron acceleration by intense field aligned currents

A cesium-doped high explosion was detonated at 165 km altitude in the auroral ionosphere during quiet conditions. An Alfven wave pulse with a 200-mV/m electric field was observed, with the peak occurring 135 ms after the explosion at a distance of about 1 km. The count rate of fixed energy 2-keV electron detectors abruptly increased at 140 ms, peaked at 415 ms, and indicated a downward field-aligned beam of accelerated electrons. An anomalously high-field aligned beam of backscattered electrons was also detected. The acceleration is interpreted as due to production of an electrostatic shock or double layer between 300 and 800 km altitude. The structure was probably formed by an instability of the intense field-aligned currents in the Alfven wave launched by the charge-separation electric field due to the explosion.

Holmgren, G.↗
NASA NTRS2017

High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices

An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.

Choi, Sang Hyouk↗
NASA NTRS1971

High resolution Fouier transform spectrometer Serial No. 091002: Instruction manual

A description of the spectrometer and procedures for its operation, maintenance, alignments, adjustments, and control functions are presented. The interferometer spectrometer is a modified Model 296 capable of 0.5/cm resolution over the spectral region of 5 to 15 microns configured for operation with the optical head at a temperature of approximately 80 K. Details are given on the optical system and the electronic circuits. The detector used with the optical head is mercury doped germanium kept at a temperature of about 4 K by means of liquid helium. Electronic schematics, and instruction manuals for handling the liquid helium dewars, tape recorder for analog outputs, and playback console are included.

Source record↗
NASA NTRS1989

Alternating gradient photodetector

A far infrared (FIR) range responsive photodetector is disclosed. There is a substrate of degenerate germanium. A plurality of alternating impurity-band and high resistivity layers of germanium are disposed on the substrate. The impurity-band layers have a doping concentration therein sufficiently high to include donor bands which can release electrons upon impingement by FIR photons of energy hv greater than an energy gap epsilon. The high resistivity layers have a doping concentration therein sufficiently low as to not include conducting donor bands and are depleted of electrons. Metal contacts are provided for applying an electrical field across the substrate and the plurality of layers. In the preferred embodiment as shown, the substrate is degenerate n-type (N++) germanium; the impurity-band layers are n+ layers of germanium doped to approximately the low 10(exp 16)/cu cm range; and, the high resistivity layers are n-layers of germanium doped to a maximum of approximately 10(exp)/cu cm. Additionally, the impurity-band layers have a thickness less than a conduction-electron diffusion length in germanium and likely to be in the range of 0.1 to 1.0 micron, the plurality of impurity-bands is of a number such that the flux of FIR photons passing therethrough will be substantially totally absorbed therein, the thickness of the high resistivity layers is such compared to the voltage applied that the voltage drop in each the high resistivity layers controls the occurence of impact ionization in the impurity-band layers to a desired level.

Overhauser, Albert W.↗