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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

A novel boundary layer sensor utilizing domain switching in ferroelectric liquid crystals

This paper describes the design and the principles of operation of a novel sensor for the optical detection of a shear stress field induced by air or gas flow on a rigid surface. The detection relies on the effects of shear-induced optical switching in ferroelectric liquid crystals. It is shown that the method overcomes many of the limitations of similar measuring techniques including those using cholesteric liquid crystals. The present method offers a preferred alternative for flow visualization and skin friction measurements in wind-tunnel experiments on laminar boundary layer transition investigations. A theoretical model for the optical response to shear stress is presented together with a schematic diagram of the experimental setup.

Parmar, D. S.↗
NASA NTRS1993

Rapid, Nondestructive Readout From Ferroelectric Memory

Proposed devices with nondestructive readout offer attractive alternatives for rugged, solid-state memories suitable for contactless optical addressing and parallel processing and for nonvolatile analog memories. Pulses of light from lasers induce photoresponses in ferroelectric capacitors. Magnitude and polarity of response of each capacitor indicates magnitude and polarity of remanent polarization which, in turn, represents datum stored in that memory cell.

Thakoor, Sarita↗
NASA NTRS1992

Ferroelectric polarization reversal in single crystals

Research on the reversal of polarization in ferroelectric crystals is reviewed. Particular attention is given to observation methods for polarization reversal, BaTiO3 polarization reversal, crystal thickness dependence of polarization reversal, and domain wall movement during polarization reversal in TGS.

Stadler, Henry L.↗
NASA NTRS1994

Optically Addressable, Ferroelectric Memory With NDRO

For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.

Thakoor, Sarita↗
NASA NTRS1995

Ferroelectric Thin-Film Capacitors As Ultraviolet Detectors

Advantages include rapid response, solar blindness, and relative invulnerability to ionizing radiation. Ferroelectric capacitor made to function as photovoltaic detector of ultraviolet photons by making one of its electrodes semitransparent. Photovoltaic effect exploited more fully by making Schottky barrier at illuminated semitransparent-electrode/ferroelectric interface taller than Schottky barrier at other electrode/ferroelectric interface.

Thakoor, Sarita↗
NASA NTRS1995

Electric field effect in superconductor-ferroelectric structures

Electric field effect (the E-effect) in superconductors has been studied since 1960 when Glover and Sherill published their results on a shift of the critical temperature T(sub c) about 0.1 mK in Sn and In thin films under the action Off the field E=300 kV/cm. Stadler was the first to study the effect or spontaneous polarization of ferroelectric substrate on the electric properties of superconductors. He observed that the reversal of polarization of TGS substrate under action of external electric field in Sn-TGS structures induced the T(sub c) shift in Sn about 1.3 mK. Since in this case the effect is determined not by the electric field but by the spontaneous polarization, we may call this effect the P-effect. High-T(sub c) superconductors opened the new possibilities to study the E- and P-effects due to low charge carrier density, as compared to conventional superconductors, and to anomalously small coherence length. Experiments in this field began in many laboratories but a breakthrough was made where a shift in T(sub c) by 50 mK was observed in YBCO thin films. Much higher effects were observed in subsequent studies. The first experiments on the P-effect in high-T(sub c) superconductors were reported elsewhere. In this report we shall give a short description of study on the P-effect in high-T(sub c) superconductors.

Lemanov, V. V.↗
NASA NTRS1998

Thin-Layer Composite Unimorph Ferroelectric Driver Sensor Properties

Tests were conducted on 13 different configurations of a new class of piezoelectric devices called THUNDER (thin layer composite unimorph ferroelectric driver and sensor). These configurations consisted of a combination of 1, 3, 5, 7, and 9 layers of 25.4 micron thick aluminium as a backing material, with and without a top layer of 25.4 micrometer aluminum. All of these configurations used the same piezoelectric ceramic wafer (PZT-5A) with dimensions of 5.08 x 3.81 x 0.018 cm. The above configurations were tested at two stages of the manufacturing process: before and after repoling. The parameters measured included frequency, driving voltage. displacement, capacitance, and radius of curvature. An optic sensor recorded the displacement at a fixed voltage(100 - 400 V peak to peak) over a predetermined frequency range (1 - 1000 Hz). These displacement measurements were performed using a computer that controlled the process of activating and measuring the displacement of the device. A parameter alpha was defined which can be used to predict the which configuration will produce the most displacement for a free standing device.

Mossi, Karla M.↗
NASA NTRS2000

A Theoretical Model for Thin Film Ferroelectric Coupled Microstripline Phase Shifters

Novel microwave phase shifters consisting of coupled microstriplines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.

Romanofsky, R. R.↗
NASA NTRS2000

A Model for Ferroelectric Phase Shifters

Novel microwave phase shifters consisting of coupled microstrip lines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.

Romanofsky, Robert R.↗
NASA NTRS2001

Electronic Model of a Ferroelectric Field Effect Transistor

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

MacLeod, Todd C.↗
NASA NTRS2002

Ferroelectric Emission Cathodes for Low-Power Electric Propulsion

Low- or no-flow electron emitters are required for low-power electric thrusters, spacecraft plasma contactors, and electrodynamic tether systems to reduce or eliminate the need for propellant/expellant. Expellant-less neutralizers can improve the viability of very low-power colloid thrusters, field emission electric propulsion devices, ion engines, Hall thrusters, and gridded vacuum arc thrusters. The NASA Glenn Research Center (GRC) is evaluating ferroelectric emission (FEE) cathodes as zero expellant flow rate cathode sources for the applications listed above. At GRC, low voltage (100s to approx. 1500 V) operation of FEE cathodes is examined. Initial experiments, with unipolar, bipolar, and RF burst applied voltage, have produced current pulses 250 to 1000 ns in duration with peak currents of up to 2 A at voltages at or below 1500 V. In particular, FEE cathodes driven by RF burst voltages from 1400 to 2000 V peak to peak, at burst frequencies from 70 to 400 kHz, emitted average current densities from 0.1 to 0.7 A/sq cm. Pulse repeatability as a function of input voltage has been initially established. Reliable emission has been achieved in air background at pressures as high as 10(exp -6) Torr.

Kovaleski, Scott D.↗
NASA NTRS1999

Ferroelectric and Piezoelectric Properties of Blends of Poly(Vinylidene-Trifluoroethylene) and Graft Elastomer

A piezoelectric polymeric blend system has been developed. The system contains two components: ferroelectric poly(vinylidene-trifluoroethylene) and graft elastomer. The remanent polarization, Pr, and the piezoelectric strain coefficient, d31, of the blends have been studied as a function of relative composition of the two components, temperature and frequency. Both blended copolymer and graft unit in the elastomer contribute to the total crystallinity of the blend-system, and hence to the remanent polarization and piezoelectricity. The piezoelectric strain coefficient, d31, of the blend systems shows dependence on both the remanent polarization and the mechanical stiffness, which in turn are determined by the fraction of the two components in the blends. This mechanism makes it possible for the piezoelectric strain response of the blend to be tailored by adjusting the relative composition. Although Pr of the copolymer is higher than that of the blends, the blend films containing 75 wt.% copolymer exhibit a higher d31 at room temperature, possibly due to their lower modulus. The blend films containing 50 wt.% copolymer exhibit a constant value of d31, from room temperature to 70 C.

Su, J.↗
NASA NTRS2006

Tunable Microstrip Filters Using Selectively Etched Ferroelectric Thin-Film Varactors for Coupling

We report on the use of patterned ferroelectric films to fabricate proof of concept tunable one-pole microstrip filters with excellent transmission and mismatch/reflection properties at frequencies up to 24 GHz. By controlling the electric field distribution within the coupling region between the resonator and input/output lines, sufficiently high loaded and unloaded Q values are maintained so as to be useful for microstrip filter design, with low mismatch loss. In the 23 - 24 GHz region, the filter was tunable over a 100 MHz range, the loaded and unloaded Q values were 29 and 68, respectively, and the reflection losses were below -16 dB, which demonstrates the suitability of these films for practical microwave applications.

Mueller, Carl H.↗
NASA NTRS2008

Ferroelectric Light Control Device

A light control device is formed by ferroelectric material and N electrodes positioned adjacent thereto to define an N-sided regular polygonal region or circular region there between where N is a multiple of four.

Park, Yeonjoon↗
NASA NTRS2008

Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

Phillips, Thomas A.↗
NASA NTRS2008

New Techniques in Characterization of Ferroelectric Materials

Two new techniques have been developed to characterize Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) based ferroelectric single crystals: (i) electro-thermal imaging, and (ii) single crystal x-ray diffraction in the transmission mode. (i) Electro-thermal imaging is a remote sensing technique that can detect the polarization direction and poling state of a whole crystal slice. This imaging technique utilizes an IR camera to determine the field induced temperature change and does not require any special or destructive sample preparation. In the resulting images it is possible to distinguish regions of 180 deg domains. This powerful technique can be used remotely during poling to determine the poling state of the crystal to avoid over-poling that can result in inferior properties and/or cracking of the crystals. Electro-thermal imaging produced the first direct observations of polarization rotation. Under bipolar field, the domains near the corners were the first to switch direction. As the field increased above the coercive field, domains at the center part of the crystals switched direction. (ii) X-ray diffraction in the transmission mode has long been used in structure determination of organic crystals and proteins; however, it is not used much to characterize inorganic systems. 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystals were examined by this XRD technique for the first time, and a never-before-seen super-lattice was revealed with a doubling of the unit cell in all three directions, giving a cell volume eight times that of a traditional perovskite unit cell. The significance of the super-lattice peaks increased with poling, indicating a structural contribution to ordering. Lack of such observations by electron diffraction in the transmission electron microscope examinations suggests the presence of a bulk effect.

Sehirlioglu, Alp↗
NASA NTRS2007

Calligraphic Poling of Ferroelectric Material

Calligraphic poling is a technique for generating an arbitrary, possibly complex pattern of localized reversal in the direction of permanent polarization in a wafer of LiNbO3 or other ferroelectric material. The technique is so named because it involves a writing process in which a sharp electrode tip is moved across a surface of the wafer to expose the wafer to a polarizing electric field in the desired pattern. The technique is implemented by use of an apparatus, denoted a calligraphic poling machine (CPM), that includes the electrode and other components as described in more detail below.

Mohageg, Makan↗