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At least 109 records · Page 6

Thermocapillary-driven convection in supported and floating-zone crystallization

Marangoni flow was induced in a thin disk of molten tin with an atomically clean surface by heating it from below in an ultra high vacuum apparatus. The radial distribution of temperature was measured and no temperature oscillations were observed. Strong mechanical disturbances introduced at a Marangoni number of about 4300 died out quickly with time indicating that the system was stable. Mathematical models indicate that strong flows in a two cell structure exist under the conditions studied, and that the velocity profile in the cell near the surface is of the boundary layer type which varies rapidly with depth.

Gill, W. N.↗

Radiation characteristics of low resistivity float zone silicon solar cells

The effects of 1-MeV electron irradiation on silicon solar cells with AM0 efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. These cells do not demonstrate post-electron-irradiation photon decay as has been described for cells processed on 1-10 ohm-cm FZ silicon.

Crotty, G. T.↗

Numerical simulation of forced convection in a two fluid layered system in a floating zone configuration

Forced convection due to rotational effects has been numerically studied in a stable two-fluid layered system in which the lighter fluid occupies the upper portion of the computational and physical domain. Results are presented for three different fluid height combinations for conditions prevailing in a microgravity environment. It is found that the heavier fluid tends to dominate the flow field, and that equal corotation and counterrotation cases produce nearly identical behavior in the flow and thermal fields.

Ramachandran, N.↗

Energy stability of thermocapillary convection in a model of the float-zone crystal-growth process

Energy stability theory has been applied to a basic state of thermocapillary convection occurring in a cylindrical half-zone of finite length to determine conditions under which the flow will be stable. Because of the finite length of the zone, the basic state must be determined numerically. Instead of obtaining stability criteria by solving the related Euler-Lagrange equations, the variational problem is attacked directly by discretization of the integrals in the energy identity using finite differences. Results of the analysis are values of the Marangoni number below which axisymmetric disturbances to the basic state will decay, for various values of the other parameters governing the problem.

Shen, Y.↗

Steady-state thermal-solutal convection and diffusion in a simulated float zone

Models describing the steady-state thermal diffusion in a pure system, the thermal-solutal diffusion in a binary system, and heat and momentum transverse in a pure system are presented. The geometry of the model is described by a 2D Cartesian coordinate system that is applicable for crystal sheets. The melting, solidifying, and melt/gas interfacial shapes as well as the thermal, flow, and solutal profiles are analytically evaluated as functions of the heat and ambient temperature profiles and material properties. The solution procedure involves a coupled asymptotic/numerical approach which reduces the coupled set of partial differential equations to ordinary type. The results should be applicable in situations where melt flows are not intense enough to change the thermal field in pure systems, or where the physical properties of the melt are such that the convective field is decoupled from the thermal field, the latter being established primarily by diffusion.

Young, G. W.↗

Linear-stability theory of thermocapillary convection in a model of float-zone crystal growth

Linear-stability theory has been applied to a basic state of thermocapillary convection in a model half-zone to determine values of the Marangoni number above which instability is guaranteed. The basic state must be determined numerically since the half-zone is of finite, O(1) aspect ratio with two-dimensional flow and temperature fields. This, in turn, means that the governing equations for disturbance quantities will remain partial differential equations. The disturbance equations are treated by a staggered-grid discretization scheme. Results are presented for a variety of parameters of interest in the problem, including both terrestrial and microgravity cases.

Neitzel, G. P.↗

Fabrication of large-area CCD detectors on high-purity, float-zone silicon

In this report on the fabrication of a 1024 x 1024 charge coupled device (CCD) imager to be used as a soft x-ray sensor onboard the Advanced X-ray Astronomical Facility (AXAF), the following conclusions were found: the dislocations that limited the performance of the high resistivity imager were characterized; the sources of stress were identified and the dislocations found were eliminated; and a charge transfer inefficiency (CTI) of 10(exp -6) and read noise as low as 1.3/e was demonstrated. This sensor must have low noise and a low CTI and must be radiation hardened to withstand any radiation damage from a space environment.

Gregory, J. A.↗

Float Zone Growth of Alloy Semiconductor Crystals: Influence of Solutocapillary Convection

Growth techniques with large free melt surfaces are affected by convective flows induced by gradients of the surface tension. In the case of dilute semiconductor alloys (in our case: germanium-silicon), the impact of solutocapillary convection (due to the concentration dependence of the surface tension) has to be taken into account in addition to the "normal" thermocapillary convection (due to the temperature dependence of the surface tension). Theoretical considerations, based on experimental temperature profiles, growth geometry, segregation coefficient, and measured values for the temperature and concentration coefficients of the surface tension, lead to the conclusion that for the germanium rich side of the Ge(1-x)Si(x) system, the contribution of solutocapillary convection is, at least in front of the solid-liquid interface, the dominant factor. It results in an additional flow roll with a flow direction opposite to the thermocapillary flow, similar to the ones reported for metal alloys or high Prandtl-number fluids.

Dold, P.↗

Measurement of Microscopic Growth Rates in Float-Zone Silicon Crystals

Time dependent convective flows during crystal growth of doped semiconductors lead to fluctuations of the composition, so called dopant striations. In general, it is difficult to decide which is the main mechanism for the generation of these striations, it might be either the fluctuation of the concentration field in the melt and the extent of the solute boundary layer ahead of the solid-liquid interface or a variation of the growth velocity. Direct access to the concentration field is rather complicated to achieve, especially considering the high process temperature and the chemical activity of liquid silicon. The contribution of growth rate fluctuations to the formation of compositional fluctuations can be determined by measuring microscopic growth rates. The classical method of current pulses requires electrical feed-throughs and good electrical contacts, both are critical issues for the growth of high purity silicon crystals. Using a radiation based heating system, the heating power can be modulated very fast and effectively. We added to the normal heater power a sinusoidal off-set in the frequency range of 1 to 10 Hz, generating a narrow spaced weak rippling in the grown crystals which are superposed to the dopant striations caused by natural and by thermocapillary convection. The pulling speed was varied between 1 and 4mm/min. The microscope images of etched crystals slices have been analyzed by peak-search algorithms (measuring the spacing between each artificially induced marker) and by FFT. Performing growth experiments under a time-dependent flow regime, fluctuations of the microscopic growth velocity of Delta(v)/v(sub average) up to 50% have been measured. Damping the time-dependent convection by the use of an axial, static magnetic field of 500mT, the microscopic growth rate became constant within the resolution limit of this method. The results will be discussed using analytical methods for the calculation of microscopic growth velocity and by comparing them with measurements of temperature fluctuations in the melt during growth experiments itself.

Dold, P.↗

Solutocapillary Convection in the Float-Zone Process with a Strong Magnetic Field

This paper treats the axisymmetric flow and mass transport in a cylindrical liquid bridge between the melting end of a feed rod and the solidifying end of an alloyed semiconductor crystal. There is a strong, uniform, steady, axial magnetic field. The surface tension depends on the temperature and the concentration of the species, while variations of the concentration occur because one species is rejected into the liquid during solidification. The thermocapillary and solutocapillary convections tend to cancel- over part of the liquid bridge. For certain parameter ranges, there are two different stable steady solutions: one where the concentration gradient along the free surface leads to dominance by the solutocapillary convection and one where the mass transport due to the thermocapillary convection makes the concentration gradient along the free surface small, so that the thermocapillary convection is dominant.

Walker, J. S.↗

Edge-defined contact heater apparatus and method for floating zone crystal growth

An apparatus for growing a monocrystalline body (30) from a polycrystalline feed rod (22) includes a heater (20) that is positioned to heat a short section of the polycrystalline rod (22) to create a molten zone (34). The heater (20) is formed to include a shaper (40) that contacts the polycrystalline rod (22) in the molten zone (34) and has a hole (46) to allow flow in the molten zone (34) between the polycrystalline rod (22) side and the monocrystalline body (30) side of the shaper. The shaper (40) has an edge (42) that defines the boundary of the cross-section of the monocrystalline body (30) that is formed as the molten material solidifies.

Kou, Sindo↗

Microgravity silicon zoning investigation

The flow instabilities in floating zones of silicon were investigated and methods for investigation of these instabilities in microgravity were defined. Three principal tasks were involved: (1) characterization of the float zone in small diameter rods; (2) investigation of melt flow instabilities in circular melts in silicon disks; and (3) the development of a prototype of an apparatus that could be used in near term space experiments to investigate flow instabilities in a molten zone. It is shown that in a resistance heated zoner with 4 to 7 mm diameter silicon rods that the critical Marangoni number is about 1480 compared to a predicted value of 14 indicative that viable space experiments might be performed. The prototype float zone apparatus is built and specifications are prepared for a flight zoner should a decision be reached to proceed with a space flight experimental investigation.

Kern, E. L.↗

Microgravity accelerometer characterization on Columbia STS-32 mission

The Honeywell In-Space Accelerometer (HISA) is a three-axis microgravity accelerometer instrument package recently developed by Honeywell Systems and Research Center (SRC) to monitor oscillatory and transient accelerations onboard spacecraft and spaceborne structures. The HISA was designed to be co-located with materials and life sciences experiments to record real-time accelerometer event data, sampling time, and temperature. The HISA was originally developed to monitor the microgravity disturbances associated with a polymer morphology experiment developed by 3M Company in Minneapolis, Minnesota. The HISA was first flight tested with the 3M experiment on the Space Shuttle Atlantis STS-34 in October 1989. The HISA was successfully flown on a second shuttle mission (Columbia STS-32 in January 1990) in support of the NASA JSC-sponsored Microgravity Disturbances Experiment (MDE), which focused on the effects of microgravity disturbances on the growth of high-quality Indium crystals. The primary objective of the STS-32 MDE experiment was to investigate the effects of crew-induced gravity disturbances on the microstructure (crystal defects and uniformity of impurity distribution) of float-zone-grown crystals. The float-zone technique involves establishing a suspended molten zone between two cylindrical samples a pure, single-crystal sample and an impure, polycrystalline sample. Microgravity disturbances due to crew treadmill activity and orbiter maneuvering system thruster firings were sensed and recorded by the HISA to understand their effects on the stability of the float zone. The principle of operation of the HISA, the flight configuration of the HISA supporting the MDE experiment, and the characterization of STS-32 treadmill disturbance data are summarized.

Schoess, Jeff↗

Influence of oxygen on defect production in electron-irradiated, boron-doped silicon

Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.

Deangelis, H. M.↗

Solidification of II-VI Compounds in a Rotating Magnetic Field

This project is aimed at using a rotating magnetic field (RMF) to control fluid flow and transport during directional solidification of elemental and compound melts. Microgravity experiments have demonstrated that small amounts of residual acceleration of less than a micro-g can initiate and prolong fluid flow, particularly when there is a static component of the field perpendicular to the liquid solid interface. Thus a true diffusion boundary layer is not formed, and it becomes difficult to verify theories of solidification or to achieve diffusion controlled solidification. The RMF superimposes a stirring effect on an electrically conducting liquid, and with appropriate field strengths and frequencies, controlled transport of material through a liquid column can be obtained. As diffusion conditions are precluded and complete mixing conditions prevail, the technique is appropriate for traveling solvent zone or float zone growth methods in which the overall composition of the liquid can be maintained throughout the growth experiment. Crystals grown by RMF techniques in microgravity in previous, unrelated missions have shown exceptional properties. The objective of the project is two-fold, namely (1) using numerical modeling to simulate the behavior of a solvent zone with applied thermal boundary conditions and demonstrate the effects of decreasing gravity levels, or an increasing applied RMF, or both, and (2) to grow elements and II-VI compounds from traveling solvent zones both with and without applied RMFs, and to determine objectively how well the modeling predicts solidification parameters. Numerical modeling has demonstrated that, in the growth of CdTe from a tellurium solution, a rotating magnetic field can advantageously modify the shape of the liquid solid interface such that the interface is convex as seen from the liquid. Under such circumstances, the defect structure is reduced as any defects which are formed tend to grow out and not propagate. The flow of liquid, however, is complex due to the competing flow induced by the rotating magnetic field and the buoyancy driven convection. When the acceleration forces are reduced to one thousandth of gravity, the flow pattern is much simplified and well controlled material transport through the solvent zone can be readily achieved. Triple axis diffractometry and x-ray synchrotron topography have demonstrated that there is no significant improvement in crystal quality for HgCdTe grown on earth from a tellurium solution when a rotating magnetic field is applied. However, modeling shows that the flow in microgravity with a rotating magnetic field would produce a superior product.

Gillies, D. C.↗

Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field

The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.

Gillies, D. C↗