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Intrinsic infrared detectors in the long-wavelength range (6 - 20 ??are based on interband transition which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band.
A hand-held quantum well infrared photodetector camera has been demonstrated.
An optimized long-wavelength very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed.
One of the simplest device realizations of the classic particle-in-the-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP).
This paper will report on the characterization of spatially separated four-color QWIP FPA and LWIR QWIP camera. Optimization of operating parameters for each color and the best optimized operating parameters for all four-color operating simultaneously will be discussed.
An optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
In this presentation, we will discuss the development of this large format broadband infrared FPA based on a GaAs/AlGaAs materials system and its performance in quantum efficiency, uniformity, and operability.
Objects detected at beam axis intersections. Group of light sources or detectors is mounted in box at focal plane of lens. Box can therefore illuminate or view several axes, each corresponding to source or detector of group. Proximity sensing system developed to trigger braking system of automatically controlled car.
A 640x512 pixel, long-wavelength cutoff, narrow-band quantum well infrared photodetector focal pllay array, a four-band QWIP FPA in 4-16 um spectral region, and a broad-band QWIP FPA having 15.4 mum cutoff have been demonstrated. In this paper we discuss the detector designs, dark currents, quantum efficiencies, responsivities, detectivities, noise equivalent differential temperatures, the effect of FPA nonuniformity on performance, and the operabilities of these QWIP FPAs.
Common method of determining residual errors in pointing of paraboloidal-reflector microwave antennas involves constantly dithering antenna mechanically about estimated direction of source. For cases where expense of additional focal-plane collecting horns (and their amplifiers) justified, new method eliminates mechanical dithering. Outputs of multiple receiving feed horns processed to extract phase information indicative of direction of arrival of signal received from distant source.
An optical proximity sensor for optically detecting an object within a predetermined detection volume is described. More specifically, an optical proximity sensor is disclosed having an illuminator assembly including lens and a plurality of light-emitting diodes located at first predetermined positions along the focal plane of the illuminator lens. A detector assembly including a detector lens and a plurality of photodiodes located at second predetermined positions along the focal plane of the detector lens is also provided. The two lenses are spaced apart a predetermined distance in order to define a predetermined detection volume. Additionally, a combination of optical proximity sensors, according to the invention, is disclosed wherein the sensors can be used in conjunction with a vehicle to provide a safety system for warning an operator when an object is within a volume defined by the proximity sensor combination.
We have developed a single long-wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) camera for thermography. This camera has been used to measure the temperature profile of patients. A pixel coregistered simultaneously reading mid-wavelength infrared (MWIR)/LWIR dual-band QWIP camera was developed to improve the accuracy of temperature measurements especially with objects with unknown emissivity. Even the dualband measurement can provide inaccurate results due to the fact that emissivity is a function of wavelength. Thus we have been developing a four-band QWIP camera for accurate temperature measurement of remote object.
The general architecture of the imaging array, some merits of HgCdTe-on-sapphire as a detector material, and the current status of the laboratory tests and the Short Wave Infrared (SWIR) camera are described.
A development status evaluation is presented for solid-state self-scanned imaging arrays applicable to NASA space science missions, giving attention to the visible and IR spectral range (0.5-1000 microns). Shortward of 1.1 micron, Si CCDs will continue to be used. Beyond 10 microns, the challenge for NASA researchers lies in the development of a class of detectors that can dispense with the conventional cooling to below 10 K. Above 25 microns, extrinsic Ge detectors will be used, and beyond 200 microns, a novel extrinsic material such as GaAs will have to be developed for this application.
A frame-transfer silicon charge-coupled-device (CCD) imager has been developed that can be closely abutted to other imagers on three sides of the imaging array. It is intended for use in multichip arrays. The device has 420 x 420 pixels in the imaging and frame-store regions and is constructed using a three-phase triple-polysilicon process. Particular emphasis has been placed on achieving low-noise charge detection for low-light-level imaging in the visible and maximum energy resolution for X-ray spectroscopic applications. Noise levels of 6 electrons at 1-MHz and less than 3 electrons at 100-kHz data rates have been achieved. Imagers have been fabricated on 1000-Ohm-cm material to maximize quantum efficiency and minimize split events in the soft X-ray regime.
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Applications were demonstrated for hybrid silicon infrared CCD arrays in both ground and space based astronomical instrumentation. The primary goal was to provide a point of departure for both instrument designs and further development of the device. The test device is an indium doped silicon (Si:In) version of the 32 x 32 Rockwell 30331 surface channel hybrid silicon IRCCD. The device structure and a typical instrument interface are shown. The motivation for further study is presented along with a discussion in detail of some of the issues.
Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.