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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6

Heterogeneous Growth of UiO-66-NH 2 on Oxidized Single-Walled Carbon Nanotubes to Form “Beads-on-a-String” Composites

In this work we demonstrate a facile synthesis of UiO-66-NH 2 metal-organic framework (MOF)/oxidized single-walled carbon nanotubes (ox-SWCNTs) composite at room temperature. Acetic acid (HAc) was used as a modulator to manipulate the morphology of the MOF in these composites. With zirconium oxide-cluster (Zr) to 2-aminoteraphthalate linker (ATA) 1:1.42 ratio and acetic acid modulator, we achieved predominately heterogeneous MOF growth on the sidewalls of CNTs. Understanding the growth mechanism of these composites was facilitated by conducting DFT calculations to investigate the interactions between ox-SWCNTs and the MOF precursors. The synthesized composites combine both micro-porosity of the MOF and electrical conductivity of the SWCNTs. Gas sensing tests demonstrated higher response for UiO-66-NH 2 /ox-SWCNT hybrid toward dry air saturated with dimethyl methylphosphonate (DMMP) vapor compared to oxidized single-walled carbon nanotubes (ox-SWCNTs) alone.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Milliwatt-level UV generation using sidewall poled lithium niobate

Integrated coherent sources of ultra-violet (UV) light are essential for a wide range of applications, from ion-based quantum computing and optical clocks to gas sensing and microscopy. Recently, approaches that use frequency upconversion have received considerable attention. Among these, the integrated thin-film lithium niobate (TFLN) photonic platform shows particular promise. However, to date, the high propagation losses and lack of reliable techniques for consistent poling of cm-long waveguides with small poling periods have impeded progress. Here, we present a sidewall poled lithium niobate (SPLN) waveguide approach that overcomes these obstacles and results in a two-orders-of-magnitude increase in generated UV power. We demonstrate SPLN waveguides featuring record-low propagation losses of 2.3 dB/cm, complete domain inversion across the waveguide cross-section, and an optimum 50% duty cycle, resulting in a record-high normalized conversion efficiency of 5050%W$^{−1}$cm$^{−2}$, and 4.2 mW of generated on-chip power at 390 nm wavelength. This advancement makes the TFLN platform a viable option for high-quality on-chip UV generation, benefiting emerging applications.

Franken, C. A.A. [Harvard U.; Twente U., Enschede]↗

Ordered porous RGO/SnO 2 thin films for ultrasensitive humidity detection

In this work, ordered porous thin films of reduced graphene oxide and tin oxide (rGO/SnO 2 ) were synthesized by a polystyrene sphere monolayer colloidal crystal template method, and their gas-sensing properties were systematically studied. The formed amorphous SnO 2 and partially reduced graphene oxide were analyzed using several complementary material characterization techniques. Further, the results show that the incorporation of rGO significantly improved the humidity sensitivity and the electrical conductivity of the sensor relative to the pristine SnO 2 thin film. Fast response time and excellent selectivity towards humidity were also achieved for the rGO/SnO 2 composite film. The long-term stability of the rGO/SnO 2 sensor was confirmed by comparing its performance to a commercial humidity sensor. The enhanced sensor performance is attributed to the synergistic effects of the incorporation of rGO and the ordered porous structure of the composite film.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Unravelling chemical pathways of H 2 on Ga 2 O 3 surfaces with spectro-electrochemistry

This work highlights the capability of coupled spectroscopic and electrochemical techniques to probe dynamic surface processes under realistic operating conditions. By simultaneously employing in situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) and electrochemical impedance spectroscopy (EIS), we elucidate the mechanistic interaction between Ga 2 O 3 and hydrogen under elevated temperatures in a low-oxygen environment. This novel spectro-electrochemical approach allows chemistry to be correlated with the surface charge density of Ga 2 O 3 . Our results reveal a concentration-dependent transition in reaction pathway. At low concentrations, hydrogen reacts with ambient oxygen to form surface hydroxyls. At intermediate concentrations, hydrogen interacts with surface adsorbed oxygen to generate hydroxyl groups along with reducing the surface. Finally, at high H 2 concentrations, hydrogen reduces both hydroxyls and surface oxygen, leading to a highly conductive grain surface. As a result, hydrides form on the reduced Ga 2 O 3 surface. The gained insights are relevant for heterogeneous catalysis and gas sensing.

08 HYDROGEN↗

Theoretical and experimental study of temperature effect on electronic and optical properties of TiO 2 : Comparing rutile and anatase

To gain fundamental understanding of the high-temperature optical gas-sensing and light-energy conversion materials, we comparatively investigate the temperature effects on the band gap and optical properties of rutile and anatase TiO 2 experimentally and theoretically. Given that the electronic structures of rutile and anatase are fundamentally different, i.e. direct band gap in rutile and indirect gap in anatase, it is not clear whether these materials exhibit different electronic structure renormalizations with temperature. Using ab initio methods, we show that the electron-phonon interaction is the dominant factor for temperature band gap renormalization compared to the thermal expansion. As a result of different contributions from the acoustic and optical phonons, the band gap is found to widen with temperature up to 300 K, and to narrow at higher temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Investigation of structural and thermal properties of Nb 2 CT X MXenes at elevated temperature

Nb-based MXenes, particularly Nb 2 CT X is noted for its metallic characteristics, and nearly zero band gap because of it 2D structure. Different synthesis processes have been utilized such as HF etching, HCl/LiF and molten salt method to prepare delaminated Nb 2 CT X MXene sheets[1]. Moreover, various approaches have been tried for modifying MXenes properties including partial oxidation for application such as energy storage, gas sensing, photocatalyst etc. One step synthesis technique used for creating efficient hydrogen evolution photocatalyst comprised of Nb 2 O 5 /C/Nb 2 C composites. Furthermore, we have prepared Nb 2 CT X MXenes with a strong etching method and investigated its fundamental properties at elevated temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evolutionary and functional relationships between plant and microbial C 1 metabolism in terrestrial ecosystems

One-carbon (C 1 ) metabolism, centered on the universal methyl donor S-adenosyl methionine (SAM), plays critical roles in biosynthesis, redox regulation, and stress responses across plants and microbes. A recently proposed photosynthetic C 1 pathway links SAM methyl groups directly to RuBisCO-mediated CO 2 assimilation and integrates with nitrogen and sulfur metabolism. Light-dependent SAM synthesis may regulate the methylation of biopolymers and specialized metabolites and help mitigate photorespiratory stress under elevated temperature and drought. Phylogenetic analysis of two core enzymes suggests evolutionary continuity from methylotrophic microbes to land plants, supporting microbial origins via endosymbiotic gene transfer. Beyond intracellular roles, C 1 metabolism drives biosphere–atmosphere exchange via gases such as methane, methanol, formic acid, and formaldehyde, and numerous specialized volatiles synthesized through SAM methylation. S-methylmethionine, a mobile C 1 metabolite, may mediate phloem transport of reduced sulfur, nitrogen, and methyl groups, linking above- and belowground C 1 cycling in plants. Advances in real-time gas sensing now allow the high-frequency quantification of C 1 fluxes from leaves, stems, and soils, highlighting C 1 metabolism as a critical and underrecognized component of terrestrial carbon and nutrient cycling. Given its microbial ancestry and the production of diverse volatile biosignatures, C 1 metabolism may also offer unique insights into life's origins and biosignature detection on exoplanets.

54 ENVIRONMENTAL SCIENCES↗

Scalable bottom-up synthesis of Co-Ni–doped graphene

Introducing heteroatoms into graphene is a powerful strategy to modulate its catalytic, electronic, and magnetic properties. At variance with the cases of nitrogen (N)– and boron (B)–doped graphene, a scalable method for incorporating transition metal atoms in the carbon (C) mesh is currently lacking, limiting the applicative interest of model system studies. This work presents a during-growth synthesis enabling the incorporation of cobalt (Co) alongside nickel (Ni) atoms in graphene on a Ni(111) substrate. Single atoms are covalently stabilized within graphene double vacancies, with a Co load ranging from 0.07 to 0.22% relative to C atoms, controllable by synthesis parameters. Structural characterization involves variable-temperature scanning tunneling microscopy and ab initio calculations. The Co- and Ni-codoped layer is transferred onto a transmission electron microscopy grid, confirming stability through scanning transmission electron microscopy and electron energy loss spectroscopy. This method holds promise for applications in spintronics, gas sensing, electrochemistry and catalysis, and potential extension to graphene incorporation of similar metals.

Science & Technology - Other Topics↗

Early Detection of Li-Ion Battery Thermal Runaway Using Commercial Diagnostic Technologies

The rate of electric vehicle (EV) adoption, powered by the Li-ion battery, has grown exponentially; largely driven by technological advancements, consumer demand, and global initiatives to reduce carbon emissions. As a result, it is imperative to understand the state of stability (SoS) of the cells inside an EV battery pack. That understanding will enable the warning of or prevention against catastrophic failures that can lead to serious injury or even, loss of life. The present work explores rapid electrochemical impedance spectroscopy (EIS) coupled with gas sensing technology as diagnostics to monitor cells and packs for failure markers. These failure markers can then be used for onboard assessment of SoS. Experimental results explore key changes in single cells and packs undergoing thermal or electrical abuse. Rapid EIS showed longer warning times, followed by VOC sensors, and then H 2 sensors. While rapid EIS gives the longest warning time, with the failure marker often appearing before the cell vents, the reliability of identifying impedance changes in single cells within a pack decreases as the pack complexity increases. This provides empirical evidence to support the significant role that cell packaging and battery engineering intricacies play in monitoring the SoS.

25 ENERGY STORAGE↗

Spinning metasurface stack for spectro-polarimetric thermal imaging

Spectro-polarimetric imaging in the long-wave infrared (LWIR) region plays a crucial role in applications from night vision and machine perception to trace gas sensing and thermography. However, the current generation of spectro-polarimetric LWIR imagers suffers from limitations in size, spectral resolution, and field of view (FOV). While meta-optics-based strategies for spectro-polarimetric imaging have been explored in the visible spectrum, their potential for thermal imaging remains largely unexplored. In this work, we introduce an approach for spectro-polarimetric decomposition by combining large-area stacked meta-optical devices with advanced computational imaging algorithms. The co-design of a stack of spinning dispersive metasurfaces along with compressive sensing and dictionary learning algorithms allows simultaneous spectral and polarimetric resolution without the need for bulky filter wheels or interferometers. Our spinning-metasurface-based spectro-polarimetric stack is compact (<10×10×10cm) and robust, and it offers a wide field of view (20.5°). We show that the spectral resolving power of our system substantially enhances performance in machine learning tasks such as material classification, a challenge for conventional panchromatic thermal cameras. Our approach represents a significant advance in the field of thermal imaging for a wide range of applications including heat-assisted detection and ranging (HADAR).

Optics↗

RIC Advanced Sensors & Controls FWP: Overview

Overview of the NETL RIC Advanced Sensors &amp; Controls FWP. Progress from EY2020 and looking ahead to EY2021. Introduces several other presentations by project PIs at the Crosscutting Research Sensors &amp; Controls Annual Review meeting, May 2021.

coal fired boiler↗

Band Structure-Driven Design of a α-CsPbI 3 Ammonia Sensor for Industrial Applications

We investigate the defect-dependent electronic structure and gas-sensing potential of cubic α-CsPbI 3 using first-principles density functional theory and nonadiabatic molecular dynamics. Among the intrinsic defects, interstitials, vacancies, antisites, and switches studied, the I Pb and Pb I antisite defects exhibit transition energy levels near the middle of the band gap, thus functioning as deep traps. Short-term adsorption of ammonia selectively modifies the electronic structure, coordinating with Pb at Pb I sites and Cs at I Pb sites, significantly altering recombination pathways. Detailed analysis reveals that NH 3 reduces anharmonicity at I Pb defects, enabling enhanced recombination at elevated temperatures, while trap-assisted recombination dominates at room temperature. Other analytes, including CH 3 NH 2 and NO 2 , show negligible impact on the band gap or recombination dynamics, highlighting the potential selectivity of NH 3 interactions. Ab initio nonadiabatic molecular dynamics simulations at 300 K and 600 K further demonstrate temperature-dependent modulation of carrier lifetimes, with NH 3 accelerating recombination at ambient conditions and suppressing certain pathways at higher temperatures. These findings suggest that α-CsPbI 3 can serve as a selective and sensitive ammonia sensor over a broad temperature range and offer insights for ammonia detection under industrially relevant conditions.

ammonia sensor↗

Charge-flow structures as polymeric early-warning fire alarm devices

The charge-flow transistor (CFT) and its applications for fire detection and gas sensing were investigated. The utility of various thin film polymers as possible sensing materials was determined. One polymer, PAPA, showed promise as a relative humidity sensor; two others, PFI and PSB, were found to be particularly suitable for fire detection. The behavior of the charge-flow capacitor, which is basically a parallel-plate capacitor with a polymer-filled gap in the metallic tip electrode, was successfully modeled as an RC transmission line. Prototype charge-flow transistors were fabricated and tested. The effective threshold voltage of this metal oxide semiconductor was found to be dependent on whether surface or bulk conduction in the thin film was dominant. Fire tests with a PFI-coated CFT indicate good sensitivity to smouldering fires.

Sechen, C. M.↗

SiC-Based Gas Sensors

Electronic grade Silicon Carbide (SiC) is a ceramic material which can operate as a semiconductor at temperatures above 600 C. Recently, SiC semiconductors have been used in Schottky diode gas sensor structures. These sensors have been shown to be functional at temperatures significantly above the normal operating range of Si-based devices. SiC sensor operation at these higher temperatures allows detection of gases such as hydrocarbons which are not detectable at lower temperatures. This paper discusses the development of SiC-based Schottky diode gas sensors for the detection of hydrogen, hydrocarbons, and nitrogen oxides (NO(x)). Sensor designs for these applications are discussed. High sensitivity is observed for the hydrogen and hydrocarbon sensors using Pd on SiC Schottky diodes while the NO(x) sensors are still under development. A prototype sensor package has been fabricated which allows high temperature operation in a room temperature ambient by minimizing heat loss to that ambient. It is concluded that SiC-based gas sensors have considerable potential in a variety of gas sensing applications.

Chen, Liang-Yu↗

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Kim, Q.↗

Applications of Silicon Carbide for High Temperature Electronics and Sensors

Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

Silicon Carbide↗

Recent progress in the development of antimonide-based mid-ir interband cascade lasers

Antimonide-based type-II interband cascade lasers are promising in becoming efficient and compact mid-infrared light sources for many applications such as gas sensing and environmental monitoring. Significant progress toward such a goal has recently been made in terms of achieving low threshold current densities, high temperature operation, and continuous wave operation of single-mode distributed feedback lasers. We review the recent progress of Sb-based mid-IR IC lasers and address the requirements for further improvements in their performance.

semiconductor superlattices↗