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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Qudit Gate Decomposition Dependence for Lattice Gauge Theories

In this work, we investigate the effect of decomposition basis on primitive qudit gates on superconducting radio-frequency cavity-based quantum computers with applications to lattice gauge theory. Three approaches are tested: SNAP & Displacement gates, ECD & single-qubit rotations $R(\theta,\phi)$, and optimal pulse control. For all three decompositions, implementing the necessary sequence of rotations concurrently rather then sequentially can reduce the primitive gate run time. The number of blocks required for the faster ECD &$R_p(\theta)$ is found to scale $\mathcal{O}(d^2)$, while slower SNAP & Displacement set scales at worst $\mathcal{O}(d)$. For qudits with $d<10$, the resulting gate times for the decompositions is similar, but strongly-dependent on experimental design choices. Optimal control can outperforms both decompositions for small $d$ by a factor of 2-12 at the cost of higher classical resources. Lastly, we find that SNAP & Displacement are slightly more robust to a simplified noise model.

Kürkçüoglu, Doga Murat↗
DOE OSTI2024

High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field-effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few-layer/multilayer SnSe 2 gated by a solution top gate combines very high room-temperature electron mobility (up to 800 cm 2 V −1 s −1 ), along with large on-off current ratios (>10 5 ) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field-effect devices, at exceptionally large sheet carrier concentrations of ≈10 13 cm −2 . Observed mobility enhancements upon partial depletion of the channel point to near-surface defects or impurities as the mobility-limiting scattering centers. Under illumination, the resulting gap states give rise to gate-controlled switching between positive and negative photoconductance. The results qualify SnSe 2 as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection.

36 MATERIALS SCIENCE↗
NASA NTRS2001

Structural models of the MscL gating mechanism

Three-dimensional structural models of the mechanosensitive channel of large conductance, MscL, from the bacteria Mycobacterium tuberculosis and Escherichia coli were developed for closed, intermediate, and open conformations. The modeling began with the crystal structure of M. tuberculosis MscL, a homopentamer with two transmembrane alpha-helices, M1 and M2, per subunit. The first 12 N-terminal residues, not resolved in the crystal structure, were modeled as an amphipathic alpha-helix, called S1. A bundle of five parallel S1 helices are postulated to form a cytoplasmic gate. As membrane tension induces expansion, the tilts of M1 and M2 are postulated to increase as they move away from the axis of the pore. Substantial expansion is postulated to occur before the increased stress in the S1 to M1 linkers pulls the S1 bundle apart. During the opening transition, the S1 helices and C-terminus amphipathic alpha-helices, S3, are postulated to dock parallel to the membrane surface on the perimeter of the complex. The proposed gating mechanism reveals critical spatial relationships between the expandable transmembrane barrel formed by M1 and M2, the gate formed by S1 helices, and "strings" that link S1s to M1s. These models are consistent with numerous experimental results and modeling criteria.

NASA Discipline Cell Biology↗
DOE OSTI2026

Topological Hall Effect in Antiferromagnetic Co-Doped Fe 3 GaTe 2

Fe 3 GaTe 2 is van der Waals (vdW) ferromagnet with a Curie temperature T C ranging from 350 K to 380 K, followed upon cooling by a ferrimagnetic transition near room temperature. Substituting Fe with Co was previously reported to induce antiferromagnetism (AFM) at a Co fraction dependent Néel temperature TN. In this work, we confirm the overall phase diagram of the Fe 3-x Co x GaTe 2 series as a function of x and temperature via magnetization and electrical transport measurements. For x ≥ 0.6 the Hall effect is observed to mimic the magnetization as the AF ground state is suppressed by the external magnetic field via a metamagnetic transition, thus displaying an anomalous Hall response. At low temperatures, we also observe a pronounced topological Hall signal peaking at μ 0 H = 4 T, or within the metamagnetic transition region of fields. This observation points to the presence of magnetic field-induced chiral spin textures, such as skyrmions upon approaching magnetization saturation. Remarkably, magnetic force microscopy (MFM) reveals the emergence of nearly circular magnetic domains, with diameters on the order of 100–200 nm, within the antiferromagnetic phase. Here, a detailed analysis of the MFM images indicates that the topological Hall effect is closely linked to the field-induced stabilization of magnetic domain structures, likely exhibiting chiral textures. This observation suggests the possible formation of skyrmions already in the AFM phase, i.e., AFM skyrmions, that evolve into ferromagnetic (FM) ones upon increasing the magnetic field. Consequently, Co-doped Fe 3 GaTe 2 might provide a platform to investigate the transformation of skyrmions, initially coupled antiferromagnetically into ferromagnetic skyrmions, and to explore its impact on the topological and skyrmion Hall effects.

anomalous Hall effect↗
DOE OSTI2024

Simulating topological quantum gates in two-dimensional magnet-superconductor hybrid structures

The creation of topological quantum gates using Majorana zero modes—an outstanding problem in the field of topological quantum computing—relies on our ability to control the braiding process in time and space. Here, we propose two-dimensional magnet-superconductor hybrid structures as a new platformfor the successful implementation of topologically protected √σ z -, σ z - and σ x -quantum gates using Majorana zero modes. Employing a novel theoretical formalism to compute the full timedependent many-body wave-function and utilizing a braiding protocol motivated by recent advances in electron-spin-resonance techniques we simulate quantum gates in 2D systems up to 600 sites, on timescales from a few femto- to nanoseconds. We demonstrate that the braiding process can be visualized in time and space by computing the non-equilibrium local density of states, which is proportional to the time-dependent differential conductance measured in scanning tunneling spectroscopy experiments, allowing us to directly image Majorana world lines.

Superconducting properties and materials↗
DOE OSTI2024

Kainate receptor channel opening and gating mechanism

Kainate receptors, a subclass of ionotropic glutamate receptors, are tetrameric ligand-gated ion channels that mediate excitatory neurotransmission. Kainate receptors modulate neuronal circuits and synaptic plasticity during the development and function of the central nervous system and are implicated in various neurological and psychiatric diseases, including epilepsy, depression, schizophrenia, anxiety and autism. Although structures of kainate receptor domains and subunit assemblies are available, the mechanism of kainate receptor gating remains poorly understood. Here we present cryo-electron microscopy structures of the kainate receptor GluK2 in the presence of the agonist glutamate and the positive allosteric modulators lectin concanavalin A and BPAM344. Concanavalin A and BPAM344 inhibit kainate receptor desensitization and prolong activation by acting as a spacer between the amino-terminal and ligand-binding domains and a stabilizer of the ligand-binding domain dimer interface, respectively. Channel opening involves the kinking of all four pore-forming M3 helices. Our structures reveal the molecular basis of kainate receptor gating, which could guide the development of drugs for treatment of neurological disorders.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2025

Unraveling spin entanglement using quantum gates with scanning tunneling microscopy-driven electron spin resonance

Quantum entanglement is a fundamental resource for quantum information processing, and its controlled generation and detection remain key challenges in scalable quantum architectures. Here, we numerically demonstrate the deterministic generation of entangled spin states in a solid-state platform by implementing quantum gates via electron spin resonance combined with scanning tunneling microscopy (ESR-STM). Using two titanium atoms on a MgO/Ag(100) substrate as a model, we construct a two-qubit system whose dynamics are coherently manipulated through tailored microwave pulse sequences. We generate Bell states by implementing a Hadamard gate followed by a controlled-NOT gate, and evaluate its fidelity and concurrence using the quantum-master equation-based code TimeESR. Our results demonstrate that ESR-STM can create entangled states with significant fidelity. This study paves the way for the realization of atom-based quantum circuits and highlights ESR-STM as a powerful tool for probing and engineering entangled states on surfaces.

Switzer, Eric D. [Donostia International Physics C↗
DOE OSTI2024

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Physics↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

On the universality of S n -equivariant k -body gates

The importance of symmetries has recently been recognized in quantum machine learning from the simple motto: if a task exhibits a symmetry (given by a group $\mathfrak{G}$), the learning model should respect said symmetry. This can be instantiated via $\mathfrak{G}$-equivariant quantum neural networks (QNNs), i.e. parametrized quantum circuits whose gates are generated by operators commuting with a given representation of $\mathfrak{G}$. In practice, however, there might be additional restrictions to the types of gates one can use, such as being able to act on at most k qubits. In this work we study how the interplay between symmetry and k-bodyness in the QNN generators affect its expressiveness for the special case of $\mathfrak{G}=S_n$, the symmetric group. Our results show that if the QNN is generated by one- and two-body Sn-equivariant gates, the QNN is semi-universal but not universal. That is, the QNN can generate any arbitrary special unitary matrix in the invariant subspaces, but has no control over the relative phases between them. Then, we show that in order to reach universality one needs to include n-body generators (if n is even) or ($n-1$)-body generators (if n is odd). As such, our results brings us a step closer to better understanding the capabilities and limitations of equivariant QNNs.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Architecture for fast implementation of quantum low-density parity-check codes with optimized Rydberg gates

Here, we propose an implementation of bivariate bicycle codes [S. Bravyi et al., Nature (London) 627, 778 (2024)] based on long-range Rydberg gates between stationary neutral atom qubits. An optimized layout of data and ancilla qubits reduces the maximum Euclidean communication distance needed for nonlocal parity-check operators. An optimized Rydberg gate pulse design enables 𝖢𝖹 entangling operations with fidelity $\mathscr{F}$ >0.999 at a distance greater than 12 µ⁢m. The combination of optimized layout and gate design leads to a quantum error correction cycle time of ∼1.2⁢8 ms for a [[144,12,12]] code, which is nearly a factor-of-two improvement over previous designs.

Poole, C. [Univ. of Wisconsin, Madison, WI (United↗
DOE OSTI2025

Gate-Based Quantum Simulation of Gaussian Bosonic Circuits on Exponentially Many Modes

We introduce a framework for simulating, on an ( n + 1 )-qubit quantum computer, the action of a Gaussian bosonic (GB) circuit on a state over 2 n modes. Specifically, we encode the initial bosonic state’s expectation values over quadrature operators (and their covariance matrix) as an input qubit state. This is then evolved by a quantum circuit that effectively implements the symplectic propagators induced by the GB gates. We find families of GB circuits and initial states leading to efficient quantum simulations. For this purpose, we introduce a dictionary that maps between GB and qubit gates such that particle- (non-particle-) preserving GB gates lead to real- (imaginary-) time evolutions at the qubit level. For the special case of particle-preserving circuits, we present a bounded-error-quantum-polynomial time (BQP)-complete GB decision problem, indicating that GB evolutions of Gaussian states on exponentially many modes are as powerful as universal quantum computers. We also perform numerical simulations of an interferometer on ∼ 8 × 10 9 modes, illustrating the power of our framework. Published by the American Physical Society 2025

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Synthesis of Single Qutrit Circuits from Clifford + R Gates

The Clifford + R gate-set is a promising basis for fault-tolerant synthesis of qutrit unitaries. We present an algorithm for approximating an arbitrary single-qutrit unitary with a circuit over the Clifford + R gates. Moreover, we analyze its complexity and obtain the non-Clifford gates cost.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Impact of Resonator-Assisted ZZ Cancellation on Cross-Resonance Gate Performance

Strong coupling in superconducting processors enables fast two-qubit gates but also produces static ZZ interactions that degrade performance. Flux-tunable couplers can suppress ZZ but introduce flux noise and additional hardware complexity. A driven-resonator RIP interaction offers a simple method to dynamically cancel ZZ [1]. Using this RIP-based cancellation scheme in a fixed-frequency transmon system, we compare cross-resonance gate behavior with and without ZZ suppression. Idling errors improve substantially when ZZ is cancelled, while CR calibration reveals clear tradeoffs in Hamiltonian composition and achievable gate speed. [1]: Huang, Z. et al. (2024). Physical Review Applied, 22(3), 034007.

Heidler, Paul [Fermilab]↗
DOE OSTI2026

Demonstration of Cross-Resonance Gates with Resonator-Assisted ZZ Cancellation

We present the characterization of a CNOT gate realized by combining cross-resonance interaction with resonator-assisted ZZ cancellation in fixed-frequency transmons on a Rigetti–SQMS co-developed quantum processor. Extending earlier work on dynamical ZZ cancellation via off-resonant resonator drives [1], we demonstrate a direct CNOT gate implementation achieved through two microwave drives on the transmons that generate a CX rotation in the |10⟩−|11⟩ subspace while selectively darkening the |00⟩−|01⟩ transition. This tunable-coupler-free approach enables high-fidelity gates and enhances the scalability of superconducting quantum architectures. [1] Z. Huang et al., Phys. Rev. Applied 22, 034007 (2024)

Heidler, Paul [Fermilab]↗
DOE OSTI2024

Selective consolidation of learning and memory via recall-gated plasticity

In a variety of species and behavioral contexts, learning and memory formation recruits two neural systems, with initial plasticity in one system being consolidated into the other over time. Moreover, consolidation is known to be selective; that is, some experiences are more likely to be consolidated into long-term memory than others. Here, we propose and analyze a model that captures common computational principles underlying such phenomena. The key component of this model is a mechanism by which a long-term learning and memory system prioritizes the storage of synaptic changes that are consistent with prior updates to the short-term system. This mechanism, which we refer to as recall-gated consolidation, has the effect of shielding long-term memory from spurious synaptic changes, enabling it to focus on reliable signals in the environment. We describe neural circuit implementations of this model for different types of learning problems, including supervised learning, reinforcement learning, and autoassociative memory storage. These implementations involve synaptic plasticity rules modulated by factors such as prediction accuracy, decision confidence, or familiarity. We then develop an analytical theory of the learning and memory performance of the model, in comparison to alternatives relying only on synapse-local consolidation mechanisms. We find that recall-gated consolidation provides significant advantages, substantially amplifying the signal-to-noise ratio with which memories can be stored in noisy environments. We show that recall-gated consolidation gives rise to a number of phenomena that are present in behavioral learning paradigms, including spaced learning effects, task-dependent rates of consolidation, and differing neural representations in short- and long-term pathways.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

Selective consolidation of learning and memory via recall-gated plasticity

In a variety of species and behavioral contexts, learning and memory formation recruits two neural systems, with initial plasticity in one system being consolidated into the other over time. Moreover, consolidation is known to be selective; that is, some experiences are more likely to be consolidated into long-term memory than others. Here, we propose and analyze a model that captures common computational principles underlying such phenomena. The key component of this model is a mechanism by which a long-term learning and memory system prioritizes the storage of synaptic changes that are consistent with prior updates to the short-term system. This mechanism, which we refer to as recall-gated consolidation, has the effect of shielding long-term memory from spurious synaptic changes, enabling it to focus on reliable signals in the environment. We describe neural circuit implementations of this model for different types of learning problems, including supervised learning, reinforcement learning, and autoassociative memory storage. These implementations involve synaptic plasticity rules modulated by factors such as prediction accuracy, decision confidence, or familiarity. We then develop an analytical theory of the learning and memory performance of the model, in comparison to alternatives relying only on synapse-local consolidation mechanisms. We find that recall-gated consolidation provides significant advantages, substantially amplifying the signal-to-noise ratio with which memories can be stored in noisy environments. We show that recall-gated consolidation gives rise to a number of phenomena that are present in behavioral learning paradigms, including spaced learning effects, task-dependent rates of consolidation, and differing neural representations in short- and long-term pathways.

Lindsey, Jack W. (ORCID:0000000309307327)↗
NASA NTRS1973

P-channel silicone gate FET

Modified fabrication technique for P-channel MOSFET devices eliminates problems involving gate placement and gate overlap. Technique provides self-aligned gate, eliminating complexity of mask aligning. Devices produced by this process are considerably faster than conventional MOSFET's and process increases yield.

Ostis, S.↗