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Results for “growth temperature”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Atomic layer deposition of MoO x thin films using Mo( i PrCp) 2 H 2 and O 3

Here, this work studied the growth of molybdenum oxide thin films with thermal atomic layer deposition (ALD) using Mo(iPrCp)2H2 and O3 as precursors. Growth parameters were determined by varying growth temperature and precursor dose times. ALD growth was exhibited in a temperature range of 100–200 °C. The growth per cycle ranged from 1.3 to 1.7 Å/cycle with a standard uniformity parameter of <5%. Attempts to grow films using H2O as an oxygen source showed no significant growth. Film properties were measured using spectroscopic ellipsometry, x-ray reflectivity, x-ray diffraction, x-ray photoelectron spectroscopy, and infrared spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Near Room Temperature Solvothermal Growth of Ferroelectric CsPbBr 3 Nanoplatelets with Ultralow Dark Current

CsPbBr 3 exhibits outstanding optoelectronic properties and thermal stability, making it a coveted material for detectors, light-emitting diodes, and solar cells. Despite observations of ferroelectricity in CsPbBr 3 quantum dots, synthesizing bulk ferroelectric CsPbBr 3 crystals has remained elusive, hindering its potential in next-generation optoelectronic devices like optical switches and ferroelectric photovoltaics. Here, a breakthrough is reported: a novel solvothermal technique enabling the growth of ferroelectric CsPbBr 3 nanoplatelets with lateral dimensions in the tens of micrometers. This represents a significant step toward achieving large-area ferroelectric CsPbBr 3 crystals. Unlike traditional methods, this approach allows for growth and crystallization of CsPbBr 3 in alcohol solutions by enhancing precursor solubility. Further this study confirms the ferroelectric nature of these nanoplatelets using second harmonic generation, electrical characterizations, and piezoresponse force microscopy. This work paves the way for utilizing ferroelectric CsPbBr 3 in novel optoelectronic devices, significantly expanding the potential of this material and opening doors for further exploration in this exciting field.

25 ENERGY STORAGE↗
DOE OSTI2024

High Temperature, Isothermal Growth Promotes Close Packing and Thermal Stability in DNA-Engineered Colloidal Crystals

Here, we report a strategy to accelerate the synthesis and increase the crystallinity of colloidal crystals engineered with DNA. Specifically, by holding the DNA-modified Au particle building blocks above the T m of the individual nanoparticle building blocks, but slightly below the T m of the anticipated colloidal crystal during the assembly process, crystallinity is increased, and enthalpically-favored phases with high degrees of facet registration are observed. We studied the utility of this approach with systems for which the commonly adopted slow-cooling approach yielded primarily amorphous aggregates. In particular, we used it to synthesize high-volume fraction colloidal crystals from large (80 nm) anisotropic nanoparticles (cubes and rhombic dodecahedra) with short (<14 nm) DNA designed to restrict the degrees of freedom for the DNA bonds and maintain the anisotropy of the particle building block. Small-angle X-ray scattering and electron microscopy studies show that the crystalline phases synthesized via this method are more thermally stable than their corresponding aggregate phases, likely due to an increased number of DNA-DNA bonds between particles. Crystal size tunability (between 0.5 and 15 µm edge lengths) and epitaxial growth were demonstrated using this strategy by modulating the NaCl concentration in tandem with previously synthesized colloidal crystal nuclei. Taken together, this isothermal strategy provides a route to deliberately crystallize a wide variety of anisotropic colloidal materials and expands the phase space accessible to nanoparticles modified with DNA.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1986

Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements

A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

Lewis, B. F.↗
NASA NTRS1987

Elevated temperature crack growth

The purpose is to determine the ability of currently available P-I integrals to correlate fatigue crack propagation under conditions that simulate the turbojet engine combustor liner environment. The utility of advanced fracture mechanics measurements will also be evaluated. Research showed that the experimentally measured displacements and loads can be accurately predicted by finite element analyses that consider the growth of the fatigue crack. These results are being used to evaluate nonlinear fracture mechanics parameters for correlating the observed fatigue crack growth rates for different strain ranges.

Kim, K. S.↗
NASA NTRS1993

Near-equilibrium growth of thick, high quality beta-SiC by sublimation

A close spaced near-equilibrium growth technique was used to produce thick, high quality epitaxial layers of beta-silicon carbide. The process utilized a sublimation method to grow morphologically smooth layers. The beta silicon carbide growth layers varied from about 200 to 750 microns in thickness. Chemical vapor deposition grown, 2-10 microns, beta silicon carbide films were used as seeds at 1860 and 1910 C growth temperatures. The respective average growth rates were 20 and 30 microns per hour. The layers are p-type with a 3.1 x 10 exp 17/cu cm carrier concentration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdown values ranged from 25 to 60 V. These measurements represent the highest values reported for 3C-SiC.

Shields, Virgil B.↗
NASA NTRS2019

Air and Water Temperature Relationship and Growth of Hyacinth and Primrose

Temperature is a primary determining factor for plant growth and development so providing an appropriate temperature input is critically important for developing growth models. The Delta Region Areawide Aquatic Weed Project (DRAAWP), a USDA (US Dept. of Agriculture)-sponsored area-wide project including NASA Ames Research Center and State of California Department of Boating and Waterways, uses modeling to assess invasive aquatic plant impacts on ecosystem services in the Delta. Availability of continuous records for monitored temperature is limited and particularly in the case of water temperature the distribution of monitoring is inadequate. This work quantitatively defines the influence of air and water temperature in determining dominant growth rate processes for important floating aquatic invasive plants in the Delta. Since these plants function with portions submerged and above water we wanted to understand the relationship between root zone and shoot zone temperature and ability to use a single temperature inputs in DRAAWP models. Water Hyacinth and Primrose were gown in multiple controlled environment chamber studies with various combinations of root zone and shoot zone temperatures. Long-term growth studies provided integrated response of biomass accumulation and distribution within the canopy. Short-term gas exchange studies provide a time scale for responsiveness to temperature and a short-term study approach to evaluate temperature responses at various stages of canopy development.

Hyacinth↗
DOE OSTI2024

GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

Group IV GeSn quantum material finds application in electronics and silicon-compatible photonics. Synthesizing these materials with low defect density and high carrier lifetime is a potential challenge due to lattice mismatch induced defects and tin segregation at higher growth temperature. Recent advancements in the growth of these GeSn materials on Si, Ge, GaAs, and with substrate orientations, demonstrated different properties using epitaxial and chemical deposition methods. This article addresses the effect of GaAs substrate orientation and misorientation on the materials’ properties and carrier lifetimes in epitaxial Ge 0.94 Sn 0.06 layers. With starting GaAs substrates of (100)/2°, (100)/6°, (110) and (111)A orientations, Ge 0.94 Sn 0.06 epitaxial layers were grown with an intermediate Ge buffer layer by molecular beam epitaxy and analyzed by several analytical tools. X-ray analysis displayed good crystalline quality, and Raman spectroscopy measurements showed blue shifts in phonon wavenumber due to biaxial compressive strain in Ge 0.94 Sn 0.06 epilayers. Cross-sectional transmission electron microscopy analysis confirmed the defect-free heterointerface of Ge 0.94 Sn 0.06 /Ge/GaAs heterostructure. Minority carrier lifetimes of the unintentionally doped n-type Ge 0.94 Sn 0.06 epilayers displayed photoconductive carrier lifetimes of >400 ns on (100)/6°, 319 ns on (100)/2°, and 434 ns on (110) GaAs substrate at 1500 nm excitation wavelength. On the other hand, Ge 0.94 Sn 0.06 layer showed poor carrier lifetime on (111)A GaAs substrate. The observed differences in carrier lifetimes were correlated with the formation energy of the Ge on (100)/6° and (100)/2° GaAs heterointerface using Stillinger–Weber interatomic potential model-based atomistic simulation with different heterointerfacial bonding by Synopsys QuantumATK tool. Total energy computation of 6280-atom Ge/GaAs supercell on (100)/6° leads to lower formation energy than (100)/2°, making it more thermodynamically stable. Hence, the growth of the GeSn/III–V material system using misoriented (100) substrates that are more thermodynamically stable will enhance the performances of optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Sn-assisted heteroepitaxy improves ZnTiN 2 photoabsorbers

Ambient temperature growth on Si produces a polycrystalline ZnTiN 2 film while Sn-assisted growth on sapphire at elevated temperature results in a single-crystal-like ZnTiN 2 film with significantly reduced sub-bandgap absorption.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Systems Biology-Based Optimization of Extremely Thermophilic Lignocellulose Conversion to Bioproducts

This was a collaborative project involving researchers at the University of Georgia, North Carolina State University, Sanford‐Burnham‐Prebys Med. Discovery Institute and the University of Rhode Island. The over-arching goal was to demonstrate that non-model microorganisms, specifically extreme thermophiles, can be a strategic metabolic engineering platform for industrial biotechnology. We engineered the most thermophilic lignocellulose-degrading organism known, Caldicellulosiruptor bescii (Cbes) , which grows optimally near 80°C, and the most thermophilic fermentative organism known, Pyrococcus furiosus (Pfu) , which grows optimally at 100°C, to produce several key industrial chemicals. This work leveraged recent breakthrough advances in the development of molecular genetic tools for these organisms, complemented by a deep understanding of its metabolism and physiology gained over the past decade of study in the PIs’ laboratories. We applied the latest metabolic reconstruction and modeling approaches to optimize biomass to product conversion. Bio-processing above 70°C can have important advantages over near-ambient operations. Highly genetically-modified microorganisms usually have a fitness disadvantage and can be easily overtaken in culture when contaminating microbes are present. The high growth temperature of extreme thermophiles precludes growth or survival of virtually any contaminating organism or phage. This reduces operating costs associated with reactor sterilization and maintaining a sterile facility. In addition, at industrial scales, heat production from microbial metabolic activity vastly outweighs heat loss through bioreactor walls such that cooling is required. Extreme thermophiles have the advantage that non-refrigerated cooling water can be used if needed, and heating requirements can be met with low-grade steam typically in excess capacity on plant sites. We assembled a highly interdisciplinary team that brought together all of the expertise for the project to have successful outcomes. This project also built upon and utilized extensive information already available in the PIs’ labs for both Cbes and Pfu to develop models that provide a comprehensive description of these organisms’ physiology and metabolism that were utilized to inform metabolic engineering strategies. The models were validated with experimental data and the results demonstrated that unpretreated lignocellulose has the potential to be converted into value-added industrial chemicals at high loading at bioreactor scale. The data generated from this research were published in twenty-one peer-reviewed papers in international journals with online access.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1992

Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE

InGaAs/GaAs heterostructures grown on (001) substrates by low-pressure MOVPE exhibit a measurable anisotropy in their structural, optical and electrical properties. This anisotropy occurs in structures which have undergone partial or complete strain relaxation and it can be strongly reduced by using slightly misoriented substrates. A comparison with similar structures grown by CBE indicates that this anisotropy is less important. This study suggests that strain relaxation is achieved by a combination of several mechanisms whose relative importance depends on the orientation of the substrate and on growth temperature which varies with the growth technique.

Roth, A. P.↗
NASA NTRS1982

Stress studies in EFG

A program to study stress generation mechanisms in silicon sheet growth was started. The purpose of the research is to define post-growth temperature profiles for the sheet that can minimize its stress during growth at high speeds, e.g., greater than 3 cm/min. The initial tasks described concern work in progress toward the development of computing capabilities to (1) model stress-temperature relationships in steady-state ribbon growth, and (2) provide a means to calculate realistic temperature fields in ribbon, given growth system component temperatures as boundary conditions. If it is determined that low stress configurations can be achieved, the modeling is to be tested experimentally by constructing low-stress growth systems for EFG silicon ribbon.

Source record↗
DOE OSTI2023

Tuning the Curie temperature of a two-dimensional magnet/topological insulator heterostructure to above room temperature by epitaxial growth

Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature (T C ) in thin film Fe 3 GeTe 2 /Bi 2 Te 3 from bulklike values (~220 K) to above room temperature by increasing the growth temperature from 300°C to 375°C. For samples grown at 375°C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe m Ge n Te 2 compositions (e.g., Fe 5 Ge 2 Te 2 and Fe 7 Ge 6 Te 2 ) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. Furthermore, this observation paves the way for developing various Fe m Ge n Te 2 /TI heterostructures with novel properties.

36 MATERIALS SCIENCE↗